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101. 发明授权

US08568532B2 Method for growing single crystal of group III metal nitride and reaction vessel for use in same 有权
标题翻译：用于生长III族金属氮化物的单晶的方法和用于其的反应容器
公开(公告)号：US08568532B2
公开(公告)日：2013-10-29
申请号：US13315871
申请日：2011-12-09
申请人： Makoto Iwai , Shuhei Higashihara , Yusuke Mori , Yasuo Kitaoka , Naoya Miyoshi
发明人： Makoto Iwai , Shuhei Higashihara , Yusuke Mori , Yasuo Kitaoka , Naoya Miyoshi
IPC分类号： C30B19/06
CPC分类号： C30B29/403 , C30B9/10 , C30B35/002
摘要： Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.
摘要翻译：属于III族的金属的氮化物单晶和助熔剂的材料包含在容纳在反应容器中的坩埚中，反应容器容纳在外容器中，外容器容纳在压力容器中，向外容器供给含氮气氛，在坩埚中产生熔融物，生长属于III族的金属的氮化物单晶。反应容器包括容纳坩埚和盖的主体。主体包括具有配合面的侧壁和在配合面处的槽开口和底壁。盖具有上板部，其包括用于主体的嵌合面的接触面和从上板部延伸并围绕所述侧壁的外侧的凸缘部。

102. 发明授权

US08501141B2 Method for producing group III nitride semiconductor 有权
标题翻译： III族氮化物半导体的制造方法
公开(公告)号：US08501141B2
公开(公告)日：2013-08-06
申请号：US12662006
申请日：2010-03-26
申请人： Takayuki Sato , Seiji Nagai , Makoto Iwai , Shuhei Higashihara , Yusuke Mori , Yasuo Kitaoka
发明人： Takayuki Sato , Seiji Nagai , Makoto Iwai , Shuhei Higashihara , Yusuke Mori , Yasuo Kitaoka
IPC分类号： C01B21/06 , C30B15/00 , C30B9/00 , C30B19/00 , C30B11/00 , C30B25/00 , C30B28/14 , H01L21/00 , H01L33/00 , H01L21/02 , H01B1/02 , H01B1/04
CPC分类号： C30B9/12 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02625
摘要： An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.
摘要翻译：本发明的目的是通过Na通量法有效地添加Ge生产GaN。在坩埚中，放置晶种衬底，使得衬底的一端保留在支撑基底上，由此籽晶衬底相对于坩埚的底表面保持倾斜，并且将镓固体和锗固体放置在晶种基板与坩埚底面之间的空间。然后，将钠固体置于晶种衬底上。通过使用这种布置，当GaN晶体通过Na通量法在籽晶衬底上生长时，锗在形成钠 - 锗合金之前溶解在熔融镓中。因此，GaN晶体可以有效地掺杂Ge。

103. 发明授权

US08231726B2 Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate 有权
标题翻译：半导体发光元件，III族氮化物半导体衬底及其制造方法
公开(公告)号：US08231726B2
公开(公告)日：2012-07-31
申请号：US12161393
申请日：2007-01-19
申请人： Hisashi Minemoto , Yasuo Kitaoka , Yasutoshi Kawaguchi , Yasuhito Takahashi , Yoshiaki Hasegawa
发明人： Hisashi Minemoto , Yasuo Kitaoka , Yasutoshi Kawaguchi , Yasuhito Takahashi , Yoshiaki Hasegawa
IPC分类号： H01L33/30 , C30B19/02 , C30B19/04
CPC分类号： H01S5/32341 , C30B19/02 , C30B29/403 , C30B29/406 , H01L33/0075 , H01L33/025 , H01L33/32 , H01S5/0206 , H01S5/22 , H01S5/305
摘要： An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm−3. The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.
摘要翻译：本发明的目的是为了获得使用III族氮化物半导体衬底的半导体发光元件，通过选择特定的衬底掺杂剂并控制其浓度来获得具有优异的光提取性能的半导体发光元件。半导体发光元件包括由包含锗（Ge）作为掺杂剂的III族氮化物半导体构成的衬底，由形成在衬底上的III族氮化物半导体构成的n型半导体层，由组形成在n型半导体层上的III族氮化物半导体以及形成在有源层上形成的III族氮化物半导体的p型半导体层，其中基板的锗（Ge）浓度为2×1017〜2×1019 cm-3。使用包含至少III族元素，碱金属或碱土金属和锗（Ge）和氮的熔体在含氮气氛中生产基材。

104. 发明授权

US07435295B2 Method for producing compound single crystal and production apparatus for use therein 有权
标题翻译：复合单晶的制造方法及其制造装置
公开(公告)号：US07435295B2
公开(公告)日：2008-10-14
申请号：US10598095
申请日：2005-02-18
申请人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Yasuhito Takahashi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Yasuhito Takahashi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B25/12
CPC分类号： C30B29/406 , C30B9/10 , C30B19/02 , C30B19/063 , C30B19/064 , Y10T117/1016
摘要： The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.
摘要翻译：本发明提供了一种能够在短时间内提高生长速度和生长具有高结晶均匀性的大单晶的化合物单晶的制造方法和用于该方法的制造装置。在搅拌材料溶液的同时培养复合单晶以产生与源气体接触的气液界面朝向材料溶液内部的流动。通过该搅拌，能够将源气体容易地溶解在原料溶液中，可以在短时间内实现过饱和，从而提高复合单晶的生长速度。此外，通过搅拌形成的流动源于源气体浓度高的气液界面到源气体浓度低的材料溶液的内部，使得源气体的溶解变得均匀。因此，不仅可以抑制气液界面的不均匀成核，而且可以提高制造的复合单晶的质量。

105. 发明申请

US20080037100A1 Acoustooptic Device and Optical Imaging Apparatus Using the Same 有权
标题翻译：声光装置及使用其的光学成像装置
公开(公告)号：US20080037100A1
公开(公告)日：2008-02-14
申请号：US11571218
申请日：2005-06-29
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Takayuki Negami , Yasuhito Takahashi , Toshimi Nishiyama , Kimihiko Shibuya
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Takayuki Negami , Yasuhito Takahashi , Toshimi Nishiyama , Kimihiko Shibuya
IPC分类号： G02F1/33
CPC分类号： G02F1/0072
摘要： The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (65), a transducer part (64), and an acoustooptic medium (6). A high-frequency signal input from the high-frequency signal input part (65) is converted into a mechanical vibration by the transducer part (64), and an optical characteristic of the acoustooptic medium (6) varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane. Light from the light source is diffracted by the acoustooptic device in accordance with a signal from the driving circuit and the resultant diffracted light forms an image on the image plane. An acoustooptic medium of the acoustooptic device is formed of a Group III nitride crystal.
摘要翻译：本发明提供即使在紫外线区域中的光也可以使用，没有激光损伤和光学损伤以及良好的声光性能的光学装置和使用该光学装置的光学成像装置。根据本发明的声光装置包括高频信号输入部分（65），换能器部分（64）和声光介质（6）。从高频信号输入部（65）输入的高频信号由换能器部（64）转换为机械振动，声光介质（6）的光学特性根据机械振动而变化。声光介质由III族氮化物晶体形成。根据本发明的光学成像装置包括光源，声光装置，驱动电路和图像平面。来自光源的光根据来自驱动电路的信号被声光装置衍射，并且所得到的衍射光在图像平面上形成图像。声光装置的声光介质由III族氮化物晶体形成。

106. 发明申请

US20080035912A1 Field-Effect Transistor, Method of Manufacturing the Same, and Electronic Device Using the Same 审中-公开
标题翻译：场效应晶体管及其制造方法及使用其的电子器件
公开(公告)号：US20080035912A1
公开(公告)日：2008-02-14
申请号：US10599658
申请日：2005-08-30
申请人： Takayuki Takeuchi , Takahiro Kawashima , Tohru Saitoh , Tomohiro Okuzawa , Yasuo Kitaoka
发明人： Takayuki Takeuchi , Takahiro Kawashima , Tohru Saitoh , Tomohiro Okuzawa , Yasuo Kitaoka
IPC分类号： H01L51/10 , H01L21/336
CPC分类号： H01L29/78696 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/66742 , H01L51/0541 , H01L51/0545
摘要： A field-effect transistor includes a semiconductor layer (14), a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor layer (14), and a gate electrode (12) for applying an electric field to the semiconductor layer (14) between the source electrode (15) and the drain electrode (16). The semiconductor layer (14) contains an organic semiconductor material and a plurality of thin wires made of an inorganic semiconductor.
摘要翻译：场效应晶体管包括电连接到半导体层（14）的半导体层（14），源电极（15）和漏电极（16），以及用于向该半导体层施加电场的栅电极在源电极（15）和漏电极（16）之间的半导体层（14）。半导体层（14）包含有机半导体材料和多个由无机半导体制成的细线。

107. 发明授权

US07288152B2 Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same 有权
标题翻译：通过该方法制造GaN晶体和GaN晶体基板，GaN晶体和GaN晶体基板的方法以及包括该GaN晶体的GaN晶体和GaN晶体基板
公开(公告)号：US07288152B2
公开(公告)日：2007-10-30
申请号：US10884386
申请日：2004-07-02
申请人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Masanori Morishita
发明人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Masanori Morishita
IPC分类号： C30B11/14
CPC分类号： H01L33/32 , H01L29/2003 , H01L29/66856
摘要： The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere containing nitrogen, gallium and the nitrogen are allowed to react with each other to generate GaN crystals in a mixed melt of the gallium and sodium, the gallium and the nitrogen are allowed to react with each other under a pressurizing condition that exceeds atmospheric pressure, and pressure P1 (atm(×1.013×105 Pa)) of the pressurizing condition is set so as to satisfy the condition that is expressed by the following conditional expression (I): P≦P1
摘要翻译：本发明提供了一种制造方法，其中可以在低压和低温的温和条件下制造高质量的GaN晶体和GaN晶体衬底。在制造GaN晶体的方法中，其中在含有氮气的气体气氛中，允许镓和氮彼此反应以在镓和钠的混合熔体中产生GaN晶体，使镓和氮反应在超过大气压的加压条件下彼此相对地设定加压条件的压力P 1（atm（x1.013×10 Pa）），以满足由（I）：<？in-line-formula description =“In-line formula”end =“lead”？> P <= P 1 <（P + 45），（I）公式描述=“在线公式”end =“tail”？>其中在表达式（I）中，P（atm（x1.013×10 Pa））表示最小压力，在混合熔体的温度T℃下产生GaN晶体。

108. 发明申请

US20070215035A1 Method for Producing Compound Single Crystal and Production Apparatus for Use Therein 有权
标题翻译：生产复合单晶的方法及其使用的生产设备
公开(公告)号：US20070215035A1
公开(公告)日：2007-09-20
申请号：US10598095
申请日：2005-02-18
申请人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Yasuhito Takahashi , Takatomo Sasaki , Yusuke Mori , Fumio Kwamura
发明人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Yasuhito Takahashi , Takatomo Sasaki , Yusuke Mori , Fumio Kwamura
IPC分类号： C30B25/00
CPC分类号： C30B29/406 , C30B9/10 , C30B19/02 , C30B19/063 , C30B19/064 , Y10T117/1016
摘要： The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.
摘要翻译：本发明提供了一种能够在短时间内提高生长速度和生长具有高结晶均匀性的大单晶的化合物单晶的制造方法和用于该方法的制造装置。在搅拌材料溶液的同时培养复合单晶以产生与源气体接触的气液界面朝向材料溶液内部的流动。通过该搅拌，能够将源气体容易地溶解在原料溶液中，可以在短时间内实现过饱和，从而提高复合单晶的生长速度。此外，通过搅拌形成的流动源于源气体浓度高的气液界面到源气体浓度低的材料溶液的内部，使得源气体的溶解变得均匀。因此，不仅可以抑制气液界面的不均匀成核，而且可以提高制造的复合单晶的质量。

109. 发明申请

US20070196942A1 Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate using the same 审中-公开
标题翻译：通过这种方法得到的III族氮化物晶体，III族氮化物晶体的制造方法和使用其的III族氮化物衬底
公开(公告)号：US20070196942A1
公开(公告)日：2007-08-23
申请号：US10584725
申请日：2004-12-22
申请人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/00
CPC分类号： C30B9/00 , C30B9/10 , C30B25/02 , C30B29/40 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/02625
摘要： In a nitrogen-containing atmosphere, a Group III nitride crystal is grown in a flux that includes at least one Group III element selected from Ga, Al, and In, an alkali metal, and Mg, thereby forming a Group III nitride substrate. Since Mg is a p-type dopant for the Group III nitride crystal, even if Mg is present in the crystal, the crystal can have p-type or semi-insulating electrical characteristics and causes no problem in its application to an electronic device. Moreover, the amount of nitrogen dissolved in the flux is increased because the flux includes Mg, which allows the crystal to be grown at a high growth rate and also improves the reproducibility of the crystal growth.
摘要翻译：在含氮气氛中，在包含选自Ga，Al，In中的至少一种III族元素，碱金属和Mg的助熔剂中生长III族氮化物晶体，从而形成III族氮化物衬底。由于Mg是III族氮化物晶体的p型掺杂剂，所以即使在晶体中存在Mg，晶体也可以具有p型或半绝缘性的电气特性，在电子器件的应用中也没有问题。此外，溶解在助熔剂中的氮的量增加，因为助熔剂包括Mg，这允许晶体以高生长速率生长并且还提高晶体生长的再现性。

110. 发明授权

US07125801B2 Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same 失效
标题翻译：制造III族氮化物晶体衬底的方法，该方法中使用的蚀刻剂，III族氮化物晶体衬底以及包含该蚀刻剂的半导体器件
公开(公告)号：US07125801B2
公开(公告)日：2006-10-24
申请号：US10911939
申请日：2004-08-04
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura
IPC分类号： H01L21/302
CPC分类号： H01L21/30612 , C30B19/02 , C30B29/40 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01L21/30625
摘要： The present invention provides a Group III nitride crystal substrate whose surface has concavities and convexities reduced in size. The surfaces with concavities and convexities, such as hillocks, pits and facets, of Group III nitride crystals are brought into contact with a melt and thereby the surfaces are subjected to meltback etching or mechanochemical polishing. The melt includes at least one of alkali metal and alkaline-earth metal. Thus a Group III nitride crystal substrate that has reduced strain and a reduced number of defects, which are caused through the processing, and is excellent in surface flatness is manufactured. Furthermore, by the use of the Group III nitride crystal substrate of the present invention, for instance, semiconductor devices of high performance can be obtained.
摘要翻译：本发明提供一种III型氮化物晶体基板，其表面的尺寸和凹凸减小。将III族氮化物晶体的具有凹凸和凹凸的表面，例如小丘，凹坑和小面与熔体接触，从而对表面进行回熔蚀刻或机械化学抛光。熔体包括碱金属和碱土金属中的至少一种。因此，制造了通过加工而产生的应力减小和缺陷数量减少，表面平坦性优异的III族氮化物晶体基板。此外，通过使用本发明的III族氮化物晶体基板，例如可以获得高性能的半导体器件。

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