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    • 103. 发明授权
    • Automatic focus adjusting device
    • 自动调焦装置
    • US06879343B2
    • 2005-04-12
    • US09810380
    • 2001-03-16
    • Tatsuya YamazakiTaeko Tanaka
    • Tatsuya YamazakiTaeko Tanaka
    • H04N5/232H04N5/217
    • H04N5/23212
    • An automatic focusing device includes an extracting circuit which extracts a focus signal corresponding to a degree of focus from a picked-up image signal, a focusing lens and a direction deciding circuit which decides the direction of driving the focusing lens on the basis of the output of the extraction circuit when the state of focus deviates from an in-focus state. The extracting circuit is arranged to simultaneously extract a plurality of focus signals having different frequency components from each other. The direction deciding circuit is arranged to perform computing operations on the focus signals separately from each other with respect to the focusing lens driving direction and to decide the focusing lens driving direction when the results of the computing operations come to coincide with each other.
    • 一种自动聚焦装置,包括一个提取电路,从提取的图像信号中提取与焦度对应的聚焦信号,聚焦透镜和方向判定电路,其基于输出来决定驱动聚焦透镜的方向 当聚焦状态偏离聚焦状态时,提取电路的位置。 提取电路被配置为同时提取具有彼此具有不同频率分量的多个聚焦信号。 方向决定电路被配置为相对于聚焦透镜驱动方向彼此分离地进行聚焦信号的计算操作,并且当计算操作的结果相互一致时决定聚焦透镜驱动方向。
    • 104. 发明授权
    • Radiographic apparatus
    • 射线照相设备
    • US06265720B1
    • 2001-07-24
    • US09006199
    • 1998-01-13
    • Tatsuya YamazakiYutaka Endo
    • Tatsuya YamazakiYutaka Endo
    • G01T100
    • H04N5/32
    • An apparatus for photographing a radiographic image, has an image sensing system for obtaining a radiographic image; an image process system for correcting the radiographic image obtained by the image sensing system using input/output characteristics in units of pixels of the image sensing system, and outputting the corrected radiographic image; and a predetermined factor detecting unit for monitoring a predetermined factor value that ultimately influences the output from the image process system.
    • 一种用于拍摄放射线照相图像的装置,具有用于获得射线照相图像的图像感测系统; 图像处理系统,用于使用图像传感系统的像素单位的输入/输出特性校正由图像感测系统获得的放射线照相图像,并输出校正的放射线照相图像; 以及预定因子检测单元,用于监视最终影响图像处理系统的输出的预定因子值。
    • 106. 发明授权
    • Manufacture of semiconductor device with salicide electrode
    • 制造具有自杀电极的半导体器件
    • US06197646B1
    • 2001-03-06
    • US08693635
    • 1996-08-09
    • Kenichi GotoAtsuo FushidaTatsuya YamazakiYuzuru OtaHideo TakagiKeisuke Okazaki
    • Kenichi GotoAtsuo FushidaTatsuya YamazakiYuzuru OtaHideo TakagiKeisuke Okazaki
    • H01L21336
    • H01L29/665H01L21/28052H01L21/28518H01L27/1104H01L29/456H01L29/4933H01L29/7846
    • A method of manufacturing a semiconductor device with a silicide electrode is provided which can form a good contact even at a scaled-down pattern. The method includes the steps of: forming an insulated gate structure with side wall spacer on a p-type region of a silicon (Si) substrate; implanting arsenic ions in source/drain regions at a dose less than 5×1015 cm−2; forming a laminated layer of a Co film and a TiN film on the surface of the substrate; heating the substrate to let the Co film react with an underlying Si region for silicidation; and removing the TiN film. Another method includes the steps of: forming a field oxide film on the surface of a silicon (Si) substrate for element isolation; implanting ions in the surface region of the Si substrate defined by the field oxide film to form a conductive silicon region; depositing a Co film on the Si surface extending to the field oxide film; heating the Si substrate under such conditions of a time and a temperature that does not allow CoSi2 to be formed, and lets the Co film react with the conductive silicon region for silicidation, thereby forming Co silicide; removing an unreacted Co film; and subjecting the Si substrate to another heat treatment to convert the Co silicide to CoSi2.
    • 提供一种制造具有硅化物电极的半导体器件的方法,即使按比例缩小的图案也能形成良好的接触。 该方法包括以下步骤:在硅(Si)衬底的p型区域上形成具有侧壁间隔物的绝缘栅结构; 以小于5×10 15 cm -2的剂量将砷离子注入源/漏区; 在所述基板的表面上形成Co膜和TiN膜的层叠层; 加热衬底以使Co膜与下面的Si区域反应以进行硅化; 并除去TiN膜。 另一种方法包括以下步骤:在用于元件分离的硅(Si)衬底的表面上形成场氧化膜; 在由场氧化膜限定的Si衬底的表面区域中注入离子以形成导电硅区; 在延伸到场氧化膜的Si表面上沉积Co膜; 在不能形成CoSi 2的时间和温度的条件下加热Si衬底,并使Co膜与导电硅区域反应硅化,从而形成Co硅化物; 去除未反应的Co膜; 并对Si衬底进行另一次热处理以将Co硅化物转化为CoSi 2。
    • 107. 发明授权
    • Semiconductor device with perovskite capacitor and its manufacture method
    • 具有钙钛矿电容器的半导体器件及其制造方法
    • US5953619A
    • 1999-09-14
    • US40284
    • 1998-03-18
    • Hisashi MiyazawaKenichi InoueTatsuya Yamazaki
    • Hisashi MiyazawaKenichi InoueTatsuya Yamazaki
    • H01L21/8247H01L21/02H01L21/8242H01L21/8246H01L27/10H01L27/105H01L27/108H01L29/788H01L29/792H01L21/20
    • H01L28/55
    • A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate,; forming a first insulating film over the semiconductor substrate, the first insulating film covering the insulated gate electrode; forming a contact window through the first insulating film to at least one of the source/drain regions; embedding a metal plug in the contact window; forming a second insulating film having an oxygen blocking function on the first insulating film, the second insulating film covering the metal plug; forming a capacitor lower electrode on the second insulating film; forming a dielectric oxide film having a perovskite crystal structure on the lower electrode; annealing the semiconductor substrate in an oxygen-containing atmosphere; and forming a capacitor upper electrode on the dielectric oxide film. A semiconductor device can be realized which has capacitors with dielectric oxide films of a perovskite crystal structure having a high dielectric constant.
    • 一种制造半导体器件的方法,具有以下步骤:在半导体衬底上形成第一导电类型的绝缘栅场效应晶体管; 在所述半导体衬底上形成第一绝缘膜,所述第一绝缘膜覆盖所述绝缘栅电极; 通过所述第一绝缘膜形成到所述源极/漏极区域中的至少一个的接触窗口; 在接触窗中嵌入金属塞子; 在所述第一绝缘膜上形成具有阻氧功能的第二绝缘膜,所述第二绝缘膜覆盖所述金属插塞; 在所述第二绝缘膜上形成电容器下电极; 在下电极上形成具有钙钛矿晶体结构的电介质氧化物膜; 在含氧气氛中退火半导体衬底; 以及在所述电介质氧化膜上形成电容器上电极。 可以实现具有具有高介电常数的钙钛矿晶体结构的电介质氧化物膜的电容器的半导体器件。