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101. 发明授权

US06306898B1 External preparations for the treatment of dermatoses 失效
标题翻译：用于治疗皮肤病的外用制剂
公开(公告)号：US06306898B1
公开(公告)日：2001-10-23
申请号：US09457368
申请日：1999-12-09
申请人： Tatsuo Shimizu , Tomoko Horiguchi , Kiyoshi Kuriyama , Mitsuo Watabe
发明人： Tatsuo Shimizu , Tomoko Horiguchi , Kiyoshi Kuriyama , Mitsuo Watabe
IPC分类号： A61K31355
CPC分类号： A61K31/01 , A61K31/355 , A61K31/575 , A61K45/06 , Y10S514/861 , Y10S514/863 , Y10S514/864 , A61K2300/00
摘要： The first invention provides an external preparation for treating dermatoses comprising vitamin E and squalane, which has an efficacy at least equivalent to that of external preparations containing adrenocortical hormones as the active ingredient. The second invention provides an external preparation for treating dermatoses comprising an adrenocortical hormone, vitamin E and squalane, which is reduced in adrenocortical hormone content as compared with conventional preparations, is also reduced in side effects, and has high clinical efficacy. The third invention provides an external preparation for treating dermatoses comprising a nonsteroidal antiinflammatory agent, vitamin E and squalane and/or squalene, which is reduced in side effects and is highly efficacious. The fourth invention provides an external preparation for treating dermatoses comprising an antihistaminic agent, vitamin E and squalane and/or squalene, which is reduced in side effects and is highly efficacious like the above preparation. The fifth invention provides an external preparation for treating dermatoses comprising vitamin E, squalene and squalane, which is reduced in side effects and is highly efficacious.
摘要翻译：第一项发明提供了用于治疗皮肤病的外用制剂，其包含维生素E和角鲨烷，其具有至少相当于含有肾上腺皮质激素作为活性成分的外用制剂的功效。第二发明提供了用于治疗皮肤病的外用制剂，其包含与常规制剂相比降低肾上腺皮质激素含量的肾上腺皮质激素，维生素E和角鲨烷，也降低了副作用，并且具有高临床疗效。第三发明提供了用于治疗皮肤病的外用制剂，其包含非甾体抗炎剂，维生素E和角鲨烷和/或角鲨烯，其减少副作用并且是高度有效的。第四发明提供了一种治疗皮肤病的外用制剂，其包含抗组胺剂，维生素E和角鲨烷和/或角鲨烯，其降低了副作用，并且与上述制剂相似。第五发明提供了用于治疗皮肤病的外用制剂，其包含维生素E，角鲨烯和角鲨烷，其减少副作用并且是高度有效的。

102. 发明授权

US5986301A Thin film capacitor with electrodes having a perovskite structure and a metallic conductivity 失效
标题翻译：具有电极的薄膜电容器具有钙钛矿结构和金属导电性
公开(公告)号：US5986301A
公开(公告)日：1999-11-16
申请号：US858768
申请日：1997-05-19
申请人： Noburu Fukushima , Takashi Kawakubo , Tatsuo Shimizu
发明人： Noburu Fukushima , Takashi Kawakubo , Tatsuo Shimizu
IPC分类号： C30B29/22 , H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L27/115 , H01L27/12 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/1203 , H01L27/11502 , H01L27/11507 , H01L28/75 , H01L27/10808 , H01L27/10829 , H01L28/55
摘要： A thin film capacitor comprises a dielectric thin film having a perovskite structure sandwiched between top and bottom electrodes. At least one of the top and bottom electrodes is made of a conductive oxide material having a perovskite structure represented with a general formula of ABO.sub.3 in which A represents A-site elements composed of at least two of alkaline-earth and rare earth metals, and B represents B-site elements composed of at least one of transition metals. The capacitors involve a small leakage current, occupy a small area, and provide large capacitance. Accordingly, the capacitors realize a high integration semiconductor memory such as a DRAM of gigabit order.
摘要翻译：薄膜电容器包括夹在顶部和底部电极之间的具有钙钛矿结构的电介质薄膜。顶部电极和底部电极中的至少一个由具有由通式ABO 3表示的钙钛矿结构的导电氧化物材料制成，其中A表示由至少两种碱土金属和稀土金属组成的A位元素，以及 B表示由至少一种过渡金属组成的B位元素。电容器的漏电流小，占用面积小，并提供大电容。因此，电容器实现了诸如千兆级DRAM的高集成半导体存储器。

103. 外观设计

USD392614S Rechargeable battery 失效
公开(公告)号：USD392614S
公开(公告)日：1998-03-24
申请号：US52193
申请日：1996-03-26
申请人： Tatsuo Shimizu , Etsuo Ogami
设计人： Tatsuo Shimizu , Etsuo Ogami

104. 发明授权

US08865170B2 Anti-human CCR7 antibody, hybridoma, nucleic acid, vector, cell, pharmaceutical composition, and antibody-immobilized carrier 有权
标题翻译：抗人CCR7抗体，杂交瘤，核酸，载体，细胞，药物组合物和抗体固定载体
公开(公告)号：US08865170B2
公开(公告)日：2014-10-21
申请号：US13876265
申请日：2011-09-27
申请人： Naoki Nishiguchi , Akiyoshi Hirayama , Masahiro Furutani , Tatsuo Shimizu , Kiyoshi Takayama , Tomoko Shimizu , Kazuya Suzuki
发明人： Naoki Nishiguchi , Akiyoshi Hirayama , Masahiro Furutani , Tatsuo Shimizu , Kiyoshi Takayama , Tomoko Shimizu , Kazuya Suzuki
IPC分类号： C07K16/28 , A61K31/713 , A61K39/00
CPC分类号： C07K16/2866 , A61K31/713 , A61K2039/505 , C07K2317/70 , C07K2317/76
摘要： The present invention is novel anti-human-CC-motif-receptor-7 (anti-human-CCR7) antibodies useful for treating tissue fibrosis or cancer, and pharmaceutical compositions containing the anti-human-CCR7 antibodies. The invention includes an anti-human-CCR7 antibody specifically binding to an extracellular domain of human CCR7, having a heavy chain CDR3 containing an amino acid sequence represented by SEQ ID NO: 7, SEQ ID NO: 17, SEQ ID NO: 27, SEQ ID NO: 37, SEQ ID NO: 47, SEQ ID NO: 57, SEQ ID NO: 67, or SEQ ID NO: 77. The invention also includes an anti-human-CCR7 antibody having heavy chain CDRs 1-3 and light chain CDRs 1-3 containing amino acid sequences represented by SEQ ID NOs: 5-10, 15-20, 25-30, 35-40, 45-50, 55-60, 65-70, or 75-80. Preferably, the antibody has an activity of interfering with a CCR7-dependent intracellular signal transduction mechanism caused by CCR7 ligand stimulation.
摘要翻译：本发明是可用于治疗组织纤维化或癌症的新型抗人CC-基质受体-7（抗人CCR7）抗体，以及含有抗人CCR7抗体的药物组合物。本发明包括与人CCR7的细胞外结构域特异性结合的抗人CCR7抗体，其具有含有SEQ ID NO：7，SEQ ID NO：17，SEQ ID NO：27所示氨基酸序列的重链CDR3， SEQ ID NO：37，SEQ ID NO：47，SEQ ID NO：57，SEQ ID NO：67或SEQ ID NO：77.本发明还包括具有重链CDR 1-3的抗人CCR7抗体，含有由SEQ ID NO：5-10，15-20,25-30,35-40,45-50,55-60,65-70或75-80表示的氨基酸序列的轻链CDR1-3。优选地，抗体具有干扰由CCR7配体刺激引起的CCR7依赖性细胞内信号转导机制的活性。

105. 发明授权

US08640571B2 Automatic rotating-type turret device for work machinery 有权
标题翻译：工作机械自动旋转式转塔装置
公开(公告)号：US08640571B2
公开(公告)日：2014-02-04
申请号：US12847388
申请日：2010-07-30
申请人： Tatsuo Shimizu , Takio Nakamura , Akihiro Goto , Yuki Noguchi
发明人： Tatsuo Shimizu , Takio Nakamura , Akihiro Goto , Yuki Noguchi
IPC分类号： B23Q16/10 , B23Q1/54
CPC分类号： B23Q1/5431 , B23Q16/102 , B23Q39/024 , B23Q2039/004 , B23Q2220/002 , Y10T29/5152 , Y10T29/5154 , Y10T29/5155 , Y10T29/5158 , Y10T29/5165 , Y10T74/14 , Y10T74/1494 , Y10T82/2506 , Y10T82/2508 , Y10T408/37
摘要： An automatic rotating turret device for work machinery is provided, in which a lift turret is not used. The turret device is provided with an axial-direction slide body, which is advanced or retracted in the direction of the axis of rotation of the turret by the drive device advancing or retracting the drive body in a direction orthogonal to the direction of rotation axis; and a clutch device that is engaged or disengaged by the axial-direction slide body being advanced or retracted, the turret being of a non-lift-type, and there being provided to the drive body a tapering action part for generating an expanding action caused by the movement of the drive body and pressingly sliding the axial-direction slide body against the turret stage.
摘要翻译：提供了一种用于工作机械的自动旋转转塔装置，其中不使用提升转塔。转台装置设置有轴向滑动体，该轴向滑动体通过驱动装置沿着与旋转轴线方向正交的方向使驱动体前进或缩回而在转台的旋转轴线的方向上前进或后退; 并且由所述轴向滑动体前进或后退而接合或分离的离合器装置，所述转台是非提升型的，并且在所述驱动体上设置有用于产生膨胀动作的锥形动作部件通过驱动体的运动并将轴向滑动体按压地滑动到转台上。

106. 发明授权

US08552537B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08552537B2
公开(公告)日：2013-10-08
申请号：US13215626
申请日：2011-08-23
申请人： Tatsuo Shimizu , Satoshi Itoh , Hideyuki Nishizawa
发明人： Tatsuo Shimizu , Satoshi Itoh , Hideyuki Nishizawa
IPC分类号： H01L23/58 , H01L21/8238 , H01L21/336 , H01L21/20 , H01L21/3205 , G11C11/34
CPC分类号： H01L29/775 , B82Y10/00 , H01L21/28273 , H01L29/66439 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to an embodiment, includes a dielectric film and an Si semiconductor part. The dielectric film is formed by using one of oxide, nitride and oxynitride. The Si semiconductor part is arranged below the dielectric film, having at least one element of sulfur (S), selenium (Se), and tellurium (Te) present in an interface with the dielectric film, and formed by using silicon (Si).
摘要翻译：根据实施例的半导体器件包括电介质膜和Si半导体部件。通过使用氧化物，氮化物和氧氮化物中的一种来形成电介质膜。所述Si半导体部件配置在与所述电介质膜的界面中存在的至少一种硫（S），硒（Se）和碲（Te）的元素的电介质膜的下方，并且通过使用硅（Si）形成。

107. 发明申请

US20130195869A1 ANTI-HUMAN CCR7 ANTIBODY, HYBRIDOMA, NUCLEIC ACID, VECTOR, CELL, PHARMACEUTICAL COMPOSITION, AND ANTIBODY-IMMOBILIZED CARRIER 有权
公开(公告)号：US20130195869A1
公开(公告)日：2013-08-01
申请号：US13876265
申请日：2011-09-27
申请人： Naoki Nishiguchi , Akiyoshi Hirayama , Masahiro Furutani , Tatsuo Shimizu , Kiyoshi Takayama , Tomoko Shimizu , Kazuya Suzuki
发明人： Naoki Nishiguchi , Akiyoshi Hirayama , Masahiro Furutani , Tatsuo Shimizu , Kiyoshi Takayama , Tomoko Shimizu , Kazuya Suzuki
IPC分类号： C07K16/28
CPC分类号： C07K16/2866 , A61K31/713 , A61K2039/505 , C07K2317/70 , C07K2317/76
摘要： An object of the present invention is to provide a novel anti-human CCR7 antibody useful as a therapeutic agent for tissue fibrosis or cancer, and a pharmaceutical composition containing the anti-human CCR7 antibody, and the like. An anti-human CCR7 antibody specifically binding to an extracellular domain of human CCR7, having a heavy chain CDR3 containing an amino acid sequence represented by SEQ ID NO: 7, SEQ ID NO: 17, SEQ ID NO: 27, SEQ ID NO: 37, SEQ ID NO: 47, SEQ ID NO: 57, SEQ ID NO: 67, or SEQ ID NO: 77 is provided. Also provided is an anti-human CCR7 antibody having heavy chain CDRs 1-3 and light chain CDRs 1-3 containing amino acid sequences represented by SEQ ID NOs: 5-10, 15-20, 25-30, 35-40, 45-50, 55-60, 65-70, or 75-80. Preferably, the antibody has an activity of interfering with a CCR7-dependent intracellular signal transduction mechanism caused by CCR7 ligand stimulation. The anti-human CCR7 antibody of the present invention may be used as an active ingredient of a therapeutic agent for tissue fibrosis or cancer.

108. 发明授权

US08338901B2 Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US08338901B2
公开(公告)日：2012-12-25
申请号：US12875534
申请日：2010-09-03
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Tatsuo Shimizu , Masamichi Suzuki
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14629
摘要： Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.
摘要翻译：某些实施例提供了一种固态成像装置，包括：光电转换单元，其包括设置在第一导电类型的半导体衬底上的第二导电类型的半导体层，将入射到半导体衬底的第一表面的入射光转换为信号电荷，并存储信号费用; 读出由光电转换单元存储的信号电荷的读出电路; 设置在半导体衬底的第一表面上以覆盖光电转换单元的半导体层的抗反射结构包括：固定电荷膜，其保持作为非信号电荷的固定电荷，并防止入射光的反射; 以及设置在光电转换单元和抗反射结构之间的孔存储区域，并且存储非信号电荷的空穴。

109. 发明授权

US08299507B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08299507B2
公开(公告)日：2012-10-30
申请号：US12714841
申请日：2010-03-01
申请人： Tatsuo Shimizu , Atsuhiro Kinoshita
发明人： Tatsuo Shimizu , Atsuhiro Kinoshita
IPC分类号： H01L29/78
CPC分类号： H01L29/6659 , H01L21/28176 , H01L21/283 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/31604 , H01L28/75 , H01L29/41775 , H01L29/45 , H01L29/456 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/7881
摘要： It is made possible to optimize the effective work function of the metal for a junction and suppress the resistance as far as possible at the interface between a semiconductor or a dielectric material and a metal. A semiconductor device includes: a semiconductor film; a Ti oxide film formed on the semiconductor film, and including at least one element selected from the group consisting of V, Cr, Mn, Fe, Co, Ni, Nb, Mo, Tc, Ru, Rh, Pd, Ta, W, Re, Os, Ir, and Pt; and a metal film formed on the Ti oxide film.
摘要翻译：可以优化用于结的金属的有效功函数，并且尽可能地在半导体或电介质材料与金属之间的界面处抑制电阻。半导体器件包括：半导体膜; 形成在所述半导体膜上的Ti氧化膜，并且包括选自V，Cr，Mn，Fe，Co，Ni，Nb，Mo，Tc，Ru，Rh，Pd，Ta，W中的至少一种元素， Re，Os，Ir和Pt; 以及形成在Ti氧化物膜上的金属膜。

110. 发明授权

US08154072B2 Nonvolatile semiconductor memory apparatus 有权
标题翻译：非易失性半导体存储装置
公开(公告)号：US08154072B2
公开(公告)日：2012-04-10
申请号：US12403493
申请日：2009-03-13
申请人： Masahiro Koike , Yuichiro Mitani , Tatsuo Shimizu , Naoki Yasuda , Yasushi Nakasaki , Akira Nishiyama
发明人： Masahiro Koike , Yuichiro Mitani , Tatsuo Shimizu , Naoki Yasuda , Yasushi Nakasaki , Akira Nishiyama
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L29/513
摘要： A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
摘要翻译：一种非易失性半导体存储器件，包括：在半导体层中形成为彼此间隔一定距离的源区和漏区; 形成在位于源极区域和漏极区域之间的半导体层上的第一绝缘膜，所述第一绝缘膜包括形成在所述第一绝缘层上并具有比所述第一绝缘层高的介电常数的第一绝缘层和第二绝缘层所述第二绝缘层具有进行孔捕获和释放的第一部位，所述第一部位通过将不同于基材的元素添加到所述第二绝缘膜而形成，所述第一部位位于比所述第二绝缘膜的费米能级更低的水平形成半导体层的材料; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

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