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    • 101. 发明申请
    • Magnetoresistive sensor having a pinned layer in multilayer structure
    • 具有多层结构的钉扎层的磁阻传感器
    • US20050174692A1
    • 2005-08-11
    • US11050014
    • 2005-02-04
    • Daisuke MiyauchiTomohito Mizuno
    • Daisuke MiyauchiTomohito Mizuno
    • G11B5/39G11B5/127H01L43/08
    • G11B5/39
    • A magnetoresistive sensor comprises stacked layers. The stacked layers comprises a first magnetic layer, a second non-magnetic intermediate layer, and a second magnetic layer in which a direction of magnetization is variable depending on an external magnetic field. The first magnetic layer, the second non-magnetic intermediate layer, and the second magnetic layer are stacked in this order to form the stacked layers. The first magnetic layer has a first ferromagnetic layer in which a direction of magnetization is pinned relative to the external magnetic field, a first non-magnetic intermediate layer, and a second ferromagnetic layer in which a direction of magnetization is pinned in a direction opposite to the direction of magnetization of the first ferromagnetic layer. The first ferromagnetic layer, the first non-magnetic intermediate layer, and the second ferromagnetic layer are stacked in this order. A sense current flows through the stacked layers substantially in the direction of stacking. A ratio of a layer thickness of the second ferromagnetic layer to a layer thickness of the first ferromagnetic layer is in a range between 1.4 and 1.9. A ratio of a product of a saturation magnetization and the layer thickness of the second ferromagnetic layer to a product of a saturation magnetization and the layer thickness of the first ferromagnetic layer is in a range between 0.9 and 1.1.
    • 磁阻传感器包括堆叠层。 堆叠层包括第一磁性层,第二非磁性中间层和第二磁性层,其中磁化方向取决于外部磁场而变化。 依次层叠第一磁性层,第二非磁性中间层和第二磁性层,形成堆叠层。 第一磁性层具有第一铁磁层,其中磁化方向相对于外部磁场固定,第一非磁性中间层和第二铁磁层,其中磁化方向被钉在与...相反的方向上 第一铁磁层的磁化方向。 第一铁磁层,第一非磁性中间层和第二铁磁层按此顺序堆叠。 感测电流基本上沿堆叠方向流过堆叠层。 第二铁磁层的层厚度与第一铁磁层的层厚度之比在1.4和1.9之间。 饱和磁化强度与第二铁磁层的层厚度的乘积与第一铁磁层的饱和磁化强度和层厚度的乘积之比在0.9与1.1之间。