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    • 101. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20090294887A1
    • 2009-12-03
    • US12213485
    • 2008-06-19
    • Takashi HiranoToyosei TakahashiToshihiro SatoMasakazu Kawata
    • Takashi HiranoToyosei TakahashiToshihiro SatoMasakazu Kawata
    • H01L31/0203
    • H01L27/14618H01L2224/13H01L2224/48091H01L2924/00014
    • A semiconductor device comprises a semiconductor substrate comprised of an interposer having one surface and a semiconductor element provided on the one surface of the interposer, the semiconductor element including a light receiving portion for receiving light thereon; a transparent substrate having light-transmitting property and one surface facing the light receiving portion, the transparent substrate arranged in a spaced-apart relationship with the one surface of the interposer through a gap formed between the one surface of the interposer and the one surface of the transparent substrate; and a spacer formed in a shape of a frame, the spacer positioned between the one surface of the interposer and the one surface of the transparent substrate for regulating the gap, and the spacer having an inner surface and an outer surface, wherein the one surface of the interposer, the one surface of the transparent substrate and the inner surface of the spacer form a space which is hermetically sealed, and wherein the spacer has a wall including at least one thin wall portion and a thick wall portion other than the at least one thin wall portion, and a vapor permeability of the at least one thin wall portion is greater than a vapor permeability of the thick wall portion, wherein a vapor allowed to flow into the space through the wall of the spacer from an outside preferentially permeates from the space to the outside through the thin wall portion. The semiconductor device is capable of reliably preventing dust from infiltrating into the semiconductor device and capable of reliably preventing occurrence of dew condensation in an inner wall of the semiconductor device, particularly on an inner surface of a transparent substrate.
    • 半导体器件包括由具有一个表面的插入件和设置在插入件的一个表面上的半导体元件组成的半导体衬底,该半导体元件包括用于在其上接收光的光接收部分; 具有透光性的透明基板和面对光接收部分的一个表面,透明基板通过形成在插入件的一个表面之间的间隙与插入件的一个表面间隔开地布置, 透明基板; 以及形成为框架形状的间隔件,所述间隔件位于所述插入件的所述一个表面和所述透明基板的用于调节所述间隙的一个表面之间,并且所述间隔件具有内表面和外表面,其中所述一个表面 所述透明基板的一个表面和所述间隔件的内表面形成密封的空间,并且其中所述间隔件具有壁,所述壁包括至少一个薄壁部分和至少一个以上的厚壁部分 一个薄壁部分和至少一个薄壁部分的蒸汽渗透性大于厚壁部分的蒸汽渗透性,其中允许从外部通过间隔物的壁流入空间的蒸气优先渗透从 通过薄壁部分到外部的空间。 半导体装置能够可靠地防止灰尘渗透到半导体装置中,能够可靠地防止在半导体装置的内壁,特别是在透明基板的内表面上发生结露。
    • 102. 发明申请
    • Spiral tap
    • 螺旋水龙头
    • US20090214311A1
    • 2009-08-27
    • US11990686
    • 2007-04-26
    • Takayuki NakajimaToshihiro Sato
    • Takayuki NakajimaToshihiro Sato
    • B23D79/00
    • B23G5/06B23G2200/40B24B19/022Y10T408/9048
    • As shown in FIG. 1, a helical flute has a constant lead part and a gradually increased lead part. The constant lead part has an axial length ranging from 0.3xLA to 1.2xLA and includes at least entirety of a leading part, so that the cutting performance of a cutting edge at the leading part and shape of chips (curled shape, etc.) are stable. In the constant lead part, because a lead is the smallest and a helix angle is large, a rake angle of the cutting edge is large, so that an excellent cutting quality is obtained and the chips become curled well. Meanwhile, in the gradually increased lead part, because of the lead gradually increased toward a shank, the chips are rapidly discharged toward the shank. Thus, the excellent cutting performance and the chip discharge performance rendered by the gradually increased lead are highly stabilized by the presence of the constant lead part. In this way, the durability is further improved.
    • 如图所示。 如图1所示,螺旋槽具有恒定的引导部分和逐渐增加的引线部分。 恒定引线部分的轴向长度范围为0.3xLA至1.2xLA,并且包括至少整个前端部分,使得切屑的前端部分和切屑形状(卷曲形状等)的切割性能为 稳定。 在恒定引线部分中,由于引线最小,螺旋角大,所以切削刃的前角大,因此切削质量优异,切屑变得卷曲良好。 同时,在引导部分逐渐增加的情况下,由于引线朝向柄方向逐渐增加,芯片迅速向柄方向排出。 因此,通过恒定引线部的存在,由逐渐增加的引线提供的优异的切割性能和切屑放电性能被高度稳定。 以这种方式,耐久性进一步提高。