会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 105. 发明授权
    • Semiconductor device having improved short channel resistance
    • 具有改善的短沟道电阻的半导体器件
    • US06426535B1
    • 2002-07-30
    • US09411942
    • 1999-10-04
    • Kiyoshi TakeuchiShigetaka Kumashiro
    • Kiyoshi TakeuchiShigetaka Kumashiro
    • H01L2976
    • H01L29/6659H01L21/26513H01L29/7833
    • First, first conductivity type impurities are injected into a semiconductor substrate to selectively form a first conductivity type region. Next, second conductivity type impurities higher in concentration than that of the first conductivity type impurities are injected into a predetermined region in the first conductivity type region to selectively form a second conductivity type region. Then, first conductivity type impurities are selectively injected into the second conductivity type region to selectively form a lightly doped second conductivity type region. By the step, a concentration distribution is formed in which a concentration of first conductivity type impurities increases from the first conductivity type region toward the lightly doped second conductivity type region.
    • 首先,将第一导电型杂质注入到半导体衬底中以选择性地形成第一导电类型区域。 接下来,将浓度高于第一导电类型杂质的第二导电类型杂质注入到第一导电类型区域中的预定区域中,以选择性地形成第二导电类型区域。 然后,将第一导电型杂质选择性地注入到第二导电类型区域中,以选择性地形成轻掺杂的第二导电类型区域。 通过该步骤,形成浓度分布,其中第一导电类型杂质的浓度从第一导电类型区域向轻掺杂的第二导电类型区域增加。
    • 106. 发明授权
    • Reverse profiling method for profiling modulated impurity density distribution of semiconductor device
    • 用于分析半导体器件的调制杂质浓度分布的反向剖析方法
    • US06242272B1
    • 2001-06-05
    • US09366321
    • 1999-08-02
    • Shigetaka KumashiroKiyoshi Takeuchi
    • Shigetaka KumashiroKiyoshi Takeuchi
    • H01L2166
    • H01L22/14
    • In a reverse profiling method, first and second processes produce first and second groups of MOSFETs, respectively. In the first process, channel impurities are implanted into a semiconductor substrate after implantation of source/drain impurities and annealing of the semiconductor substrate. Consequently, the annealing modulates channel impurity density distribution. On the other hand, in the second process, source/drain impurities are implanted into a semiconductor substrate after implantation of channel impurities and annealing of the semiconductor substrate. The annealing does not modulate channel impurity density distribution in the second process. First threshold voltage-gate length characteristics of the MOSFETs of the first group are found. Similarly, second threshold voltage-gate length characteristics of the MOSFETs of the first group are found. Finally, modulated impurity density distribution of the MOSFET of the first group is found on the basis of said first threshold voltage-gate length characteristics and said second threshold voltage-gate length characteristics.
    • 在反向轮廓分析方法中,第一和第二过程分别产生第一和第二组MOSFET。 在第一种处理中,在注入源/漏杂质和半导体衬底的退火之后,将沟道杂质注入到半导体衬底中。 因此,退火调节通道杂质浓度分布。 另一方面,在第二工序中,在注入沟道杂质和半导体衬底的退火之后,将源/漏杂质注入到半导体衬底中。 退火在第二工序中不调制通道杂质浓度分布。 发现第一组的MOSFET的第一阈值电压 - 栅极长度特性。 类似地,找到第一组的MOSFET的第二阈值电压 - 栅极长度特性。 最后,基于所述第一阈值电压 - 栅极长度特性和所述第二阈值电压 - 栅极长度特性,找到第一组的MOSFET的调制杂质浓度分布。
    • 107. 发明授权
    • Silver halide photographic light-sensitive material and method for
forming an image
    • 卤化银照相感光材料和形成图像的方法
    • US6071678A
    • 2000-06-06
    • US144330
    • 1998-08-31
    • Kiyoshi Takeuchi
    • Kiyoshi Takeuchi
    • G03C7/00G03C1/42G03C7/30G03C7/305G03C7/32G03C7/392G03C7/407G03C7/413G03C8/40
    • G03C8/408G03C7/3005G03C7/30517G03C7/413G03C1/061G03C1/42G03C7/30541G03C7/39224
    • There is disclosed a silver halide photographic light-sensitive material that contains at least one color-developing agent of formula (I) and at least one dye-forming coupler of formula (II) contained in one or more photographic constitutional layers provided on a base: ##STR1## in formula (I), Z is a carbamoyl group or the like, and Q represents a group of atoms required to form an unsaturated ring together with the C, and in formula (II), M represents a coupler component capable of causing coupling reaction at the site where G is bonded with the oxidized color-developing agent, G is a hydrogen atom or a coupling split-off group, Y.sup.1 and Y.sup.2 each represent a group having a dissociation group, whose pKa is 1 or more but 12 or less, and n and m are each an integer of 0 to 3, provided that n+m.gtoreq.1. There is also disclosed an image-forming method using the light-sensitive material. According to the use of the novel color-developing agent and the coupler having a dissociation group, an image excellent in maximum color density can be provided.
    • 公开了一种卤化银照相感光材料,其含有至少一种式(I)的显色剂和至少一种式(II)的染料形成成色剂包含在设置在基材上的一个或多个照相结构层中 :式(I)中,Z为氨基甲酰基等,Q为与C一起形成不饱和环所需的原子团,式(II)中,M表示能够引起偶联的成色剂成分 G与氧化显色剂结合的位置处的反应,G为氢原子或偶联离去基团,Y1和Y2各自表示具有离解基团的基团,其pKa为1以上且12以下, 较小,n和m各自为0〜3的整数,条件是n + m> / = 1。 还公开了使用感光材料的图像形成方法。 根据新型显色剂和具有解离基团的成色剂的用途,可以提供最大色密度优异的图像。
    • 108. 发明授权
    • Silver halide photographic light-senstive material and method for
forming an image
    • 卤化银照相光敏材料和形成图像的方法
    • US5851745A
    • 1998-12-22
    • US908681
    • 1997-08-07
    • Kiyoshi Takeuchi
    • Kiyoshi Takeuchi
    • G03C7/00G03C1/42G03C7/30G03C7/305G03C7/32G03C7/392G03C7/407G03C7/413G03C8/40
    • G03C8/408G03C7/3005G03C7/30517G03C7/413G03C1/061G03C1/42G03C7/30541G03C7/39224
    • There is disclosed a silver halide photographic light-sensitive material that contains at least one color-developing agent of formula (I) and at least one dye-forming coupler of formula (II) contained in one or more photographic constitutional layers provided on a base: ##STR1## in formula (I), Z is a carbamoyl group or the like, and Q represents a group of atoms required to form an unsaturated ring together with the C, and in formula (II), M represents a coupler component capable of causing coupling reaction at the site where G is bonded with the oxidized color-developing agent, G is a hydrogen atom or a coupling split-off group, Y.sup.1 and Y.sup.2 each represent a group having a dissociation group, whose pKa is 1 or more but 12 or less, and n and m are each an integer of 0 to 3, provided that n+m.gtoreq.1. There is also disclosed an image-forming method using the light-sensitive material. According to the use of the novel color-developing agent and the coupler having a dissociation group, an image excellent in maximum color density can be provided.
    • 公开了一种卤化银照相感光材料,其含有至少一种式(I)的显色剂和至少一种式(II)的染料形成成色剂包含在设置在基材上的一个或多个照相结构层中 式(I)中的式(I)(I)(Y1)nMG(Y2)m式(II),Z是氨基甲酰基等,Q表示与不饱和环一起形成的原子团以及 C,在式(II)中,M表示能够在G与氧化显色剂结合的位置处发生偶联反应的成色剂成分,G为氢原子或偶联离解基团Y1和 Y2各自表示具有离解基团的基团,其pKa为1以上且12以下,n和m各自为0〜3的整数,条件是n + m> / = 1。 还公开了使用感光材料的图像形成方法。 根据新型显色剂和具有解离基团的成色剂的用途,可以提供最大色密度优异的图像。