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101. 发明授权

EP1911103B1 OPTOELEKTRONISCHER HALBLEITERCHIP 有权
标题翻译：光电子半导体芯片
公开(公告)号：EP1911103B1
公开(公告)日：2016-08-31
申请号：EP06775767.4
申请日：2006-07-28
申请人： OSRAM Opto Semiconductors GmbH
发明人： AVRAMESCU, Adrian , HÄRLE, Volker , HÖPPEL, Lutz , PETER, Matthias , SABATHIL, Matthias , STRAUSS, Uwe
IPC分类号： H01L33/04 , H01S5/343 , H01S5/34 , H01L33/06 , H01L33/32 , H01S5/30 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00

102. 发明授权

EP2193555B1 OPTOELEKTRONISCHER HALBLEITERKÖRPER 有权
标题翻译：光电子半导体本体
公开(公告)号：EP2193555B1
公开(公告)日：2016-07-06
申请号：EP08834030.2
申请日：2008-08-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： RODE, Patrick , ENGL, Karl , STRASSBURG, Martin , HÖPPEL, Lutz , SABATHIL, Matthias
IPC分类号： H01L33/40 , H01L33/58 , H01L33/00
CPC分类号： H01L33/405 , H01L33/007 , H01L33/40 , H01L33/58 , H01L2933/0091

103. 发明授权

EP2612375B1 LEUCHTDIODENANORDNUNG MIT EINEM PIEZO-TRANSFORMATOR 有权
公开(公告)号：EP2612375B1
公开(公告)日：2014-10-01
申请号：EP11752171.6
申请日：2011-08-24
申请人： OSRAM Opto Semiconductors GmbH
发明人： RODE, Patrick , VON MALM, Norwin , HÖPPEL, Lutz
IPC分类号： F21V23/02 , F21Y101/02 , H01L41/107 , F21V7/00
CPC分类号： F21K9/50 , F21K9/60 , F21V7/00 , F21V23/02 , F21V23/023 , F21Y2115/10 , H01L41/107

104. 发明公开

EP2586068A1 OPTOELEKTRONISCHES BAUELEMENT UND VERFAHREN ZU DESSEN HERSTELLUNG 审中-公开
公开(公告)号：EP2586068A1
公开(公告)日：2013-05-01
申请号：EP11721337.1
申请日：2011-05-25
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz
IPC分类号： H01L33/38 , H01L33/62 , H01L31/0224 , H01L33/00
CPC分类号： H01L33/62 , H01L27/144 , H01L31/02005 , H01L31/0236 , H01L31/02363 , H01L31/18 , H01L33/0079 , H01L33/025 , H01L33/382 , H01L33/44 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The invention relates to an optoelectronic component comprising a semiconductor chip (1) and a substrate (12), which is connected to the semiconductor chip (1) by means of a connecting layer (14) made of a metal or a metal alloy. The semiconductor chip (1) has electrical connection regions (18, 19) facing the substrate (12), and the substrate (12) comprise electrical rear-side contacts (28, 29) on a rear side remote from the semiconductor chip (1). Each of the rear-side contacts (28, 29) is electrically conductively connected to the first electrical or second connection region (18, 19) by means of at least one through-plating (15) that runs through the substrate (12), wherein the first and/or the second electrical rear-side contact (28, 29) are connected to the first or the second electrical connection region (18, 19) by means of at least one further through-plating (15, 16) that runs through the substrate. Furthermore, the invention relates to an advantageous method for producing such an optoelectronic component.
摘要翻译：本发明涉及一种包括半导体芯片（1）和衬底（12）的光电子器件，该衬底通过由金属或金属合金制成的连接层（14）连接到半导体芯片（1）。所述半导体芯片（1）具有面向所述衬底（12）的电连接区域（18,19），并且所述衬底（12）在远离所述半导体芯片（1）的后侧上包括电后侧触点（28,29））。每个后侧触点（28,29）通过穿过衬底（12）延伸的至少一个贯穿镀层（15）与第一电连接区域或第二连接区域（18,19）导电连接，其中所述第一和/或第二电后侧接触件（28,29）通过至少一个另外的贯穿电镀层（15,16）连接到所述第一或第二电连接区域（18,19），所述至少一个其他贯穿电镀层贯穿基板。此外，本发明涉及用于制造这种光电子部件的有利方法。

105. 发明公开

EP2583305A1 VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERCHIPS UND OPTOELEKTRONISCHER HALBLEITERCHIP 有权
标题翻译：方法用于制造光电子半导体芯片和光电子半导体芯片
公开(公告)号：EP2583305A1
公开(公告)日：2013-04-24
申请号：EP11726078.6
申请日：2011-05-26
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz , VON MALM, Norwin
IPC分类号： H01L27/15 , H01L33/00 , H01L33/44 , H01L33/40 , H01L33/38 , H01L31/0224 , H01L31/18
CPC分类号： H01L33/46 , H01L27/0248 , H01L29/861 , H01L31/0224 , H01L31/02327 , H01L31/186 , H01L33/0079 , H01L33/20 , H01L33/382 , H01L33/40 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , Y02P70/521 , H01L2924/00
摘要： The invention relates to a method for producing an organic opto-electronic semiconductor chip, comprising the following steps: - providing an n-conducting layer (2), - arranging a p-conducting layer (4) on the n-conducting layer (2), - arranging a metal layer sequence (5) on the p-conducting layer (4), - arranging a mask (6) on the side of the metal layer sequence (5) which faces away from the p-conducting layer (4), - spot-ablating the metal layer sequence (5) and exposing the p-conducting layer (4) using the mask (6), and - spot-neutralizing or removing the exposed regions (4a) of the p-conducting layer (4) up to the n-conducting layer (2) using the mask (6), wherein - the metal layer sequence (5) comprises at least one mirror layer (51) and a barrier layer (52), and - the mirror layer (52) of the metal layer sequence (5) faces the p-conducting layer (4).
摘要翻译：一种用于在光电子半导体芯片制造方法的说明，其包括以下步骤：提供一n导通层（2），排列p型导电层（4）的n导通层（2），排列的金属层序列上（5）p导通层（4），布置掩模上（6）在所述金属层序列的做侧（5）所有的远离p导通层（4），在去除金属层序列的地方（5）和露出使用掩模（6）（4）p型导电层，和在地方中和或去除p导电层（4）只要n导通层的未覆盖区域（4A）（ 2）使用掩模（6），worin金属层序列（5）包括至少一个反射镜层（51）和阻挡层（52）和金属层序列的镜层（51）（5）面 p导通层（4）。

106. 发明公开

EP2483923A1 OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZUM ANPASSEN EINER KONTAKTSTRUKTUR ZUR ELEKTRISCHEN KONTAKTIERUNG EINES OPTOELEKTRONISCHEN HALBLEITERCHIPS 审中-公开
标题翻译：光电半导体芯片和调整方法的接触结构用于电接触光电子半导体芯片
公开(公告)号：EP2483923A1
公开(公告)日：2012-08-08
申请号：EP10763590.6
申请日：2010-09-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： RODE, Patrick , HÖPPEL, Lutz , VON MALM, Norwin , SABATHIL, Matthias , MOOSBURGER, Jürgen
IPC分类号： H01L25/075 , H01L33/62 , H01L27/15
CPC分类号： H01L27/153 , G01R31/318516 , H01H85/0417 , H01H85/32 , H01L23/5256 , H01L25/0753 , H01L27/156 , H01L33/62 , H01L51/50 , H01L2224/73265 , H01L2924/00 , H01L2924/0002 , H02H3/046 , H03K17/74 , H03K19/17728 , H05B33/083 , H05B33/0893 , Y10T29/49204
摘要： The invention relates to an optoelectronic semiconductor chip, comprising a first semiconductor functional area (21) having a first terminal (211) and a second terminal (212), and a contact structure (4) for electrically contacting the optoelectronic semiconductor chip, the contact structure being connected to the first semiconductor functional area (21) in an electrically conductive manner. The contact structure (4) has a conductor structure (41, 71, 42) that can be disconnected, wherein - when the conductor structure is not disconnected, an operating current path is established across the first terminal of the first semiconductor functional area and the second terminal, the operating current path being interrupted when the conductor structure is disconnected, or - when the conductor structure (41, 71, 42) is disconnected, an operating current path is established across the first terminal (211) of the first semiconductor functional area (21) and the second terminal (212), wherein when the conductor structure (41, 71, 42) is not disconnected, the conductor structure (41, 71, 42) connects the first terminal (211) to the second terminal (212) and short circuits the first semiconductor functional area (21).

107. 发明公开

EP2165374A2 STRAHLUNGSEMITTIERENDER HALBLEITERKÖRPER 有权
标题翻译：发射辐射的半导体本体
公开(公告)号：EP2165374A2
公开(公告)日：2010-03-24
申请号：EP08773274.9
申请日：2008-06-20
申请人： OSRAM Opto Semiconductors GmbH
发明人： STRASSBURG, Martin , HÖPPEL, Lutz , SABATHIL, Matthias , PETER, Matthias , STRAUSS, Uwe
IPC分类号： H01L33/00 , H01S5/343 , H01S5/32 , H01S5/40
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/3095 , H01S5/34333
摘要： A radiation-emitting semiconductor body having a contact layer (3) and an active zone (7) is specified, wherein the semiconductor body has a tunnel junction (4) which is arranged between the contact layer and the active zone, and the active zone has a multiple quantum well structure containing at least two active layers (71) which emit electromagnetic radiation into the semiconductor body when an operating current is impressed.

108. 发明公开

EP2130235A2 LEUCHTDIODENCHIP MIT METALLISCHER SPIEGELSCHICHT, DURCHKONTAKTIERUNG, TUNNELKONTAKT UND LADUNGSTRÄGERRESERVOIR 有权转让
标题翻译： LEDS芯片金属镜层，通过，隧道接触和承载器水库
公开(公告)号：EP2130235A2
公开(公告)日：2009-12-09
申请号：EP08700869.4
申请日：2008-01-17
申请人： OSRAM Opto Semiconductors GmbH
发明人： SABATHIL, Matthias , HÖPPEL, Lutz , EICHLER, Christoph , ENGL, Karl , PETER, Matthias , STRASSBURG, Martin
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/145 , H01L33/22 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a light-emitting diode chip comprising a series of layers (10) provided with at least one n-type conductivity layer. Said light-emitting diode chip comprises a reflective layer (5) that is connected in a conductive manner to the n-type conductivity layer (31). At least one transparent dielectric layer (4) is arranged between the n-type conductivity layer and the reflective layer.

109. 发明公开

EP1911103A1 OPTOELEKTRONISCHER HALBLEITERCHIP 有权
公开(公告)号：EP1911103A1
公开(公告)日：2008-04-16
申请号：EP06775767.4
申请日：2006-07-28
申请人： OSRAM Opto Semiconductors GmbH
发明人： AVRAMESCU, Adrian , HÄRLE, Volker , HÖPPEL, Lutz , PETER, Matthias , SABATHIL, Matthias , STRAUSS, Uwe
IPC分类号： H01L33/00 , H01S5/343 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
摘要： The application relates to an optoelectronic semiconductor chip (20) comprising the following sequence of regions in a growth direction (σ) of the semiconductor chip (20): - a p-doped barrier layer (1), for an active region (2), - the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and - an n-doped barrier layer (3) for the active region (2). The application furthermore relates to a component comprising such a semiconductor chip (20) and to a method for producing such a semiconductor chip (20).
摘要翻译：本申请涉及一种光电子半导体芯片（20），包括在半导体芯片（20）的生长方向（σ）上的以下顺序的区域： - 用于有源区域（2）的p掺杂阻挡层（1）， - 适于产生电磁辐射的有源区（2），有源区基于六方晶系化合物半导体，以及 - 用于有源区（2）的n掺杂阻挡层（3）。本申请还涉及包括这种半导体芯片（20）的组件以及用于制造这种半导体芯片（20）的方法。

110. 发明授权

EP2614534B1 LIGHT-EMITTING DIODE CHIP AND METHOD FOR PRODUCING THE SAME 有权转让
公开(公告)号：EP2614534B1
公开(公告)日：2020-03-04
申请号：EP11743539.6
申请日：2011-08-11
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz
IPC分类号： H01L33/40 , H01L33/44 , H01L33/38 , H01L33/20 , H01L33/00 , H01L33/14 , H01L33/22 , H01L33/32

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