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101. 发明授权

US4578314A Magnetic recording medium and method for manufacture thereof 失效
标题翻译：磁记录介质及其制造方法
公开(公告)号：US4578314A
公开(公告)日：1986-03-25
申请号：US651219
申请日：1984-09-17
申请人： Hiroshi Ohta , Shinji Abe , Kiyoto Fukushima
发明人： Hiroshi Ohta , Shinji Abe , Kiyoto Fukushima
IPC分类号： C09D5/23 , C09D7/12 , C09D9/04 , G11B5/708 , G11B5/842 , G11B5/70
CPC分类号： G11B5/7085 , Y10S428/90 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996
摘要： A magnetic recording medium having deposited on the surface of a non-magnetic substrate a magnetic layer formed by dispersing a powdered magnetic substance and a powdered abrasive in a binder, which magnetic recording medium is characterized by having abrasive particles activated on the surface thereof.
摘要翻译：一种磁记录介质，其在非磁性基板的表面上沉积有磁性层，该磁性层通过将粉末状磁性物质和粉末磨料分散在粘合剂中而形成，该磁性记录介质的特征在于在其表面上具有激活的磨料颗粒。

102. 发明授权

US4523286A Apparatus for making diagnosis of valve device in turbine system 失效
标题翻译：用于在涡轮机系统中诊断阀装置的装置
公开(公告)号：US4523286A
公开(公告)日：1985-06-11
申请号：US405350
申请日：1982-08-05
申请人： Tsuguaki Koga , Hidesumi Kuwashima , Hidenori Inoue , Hidetoshi Hamaoka , Hiroshi Ohta
发明人： Tsuguaki Koga , Hidesumi Kuwashima , Hidenori Inoue , Hidetoshi Hamaoka , Hiroshi Ohta
IPC分类号： F01D17/02 , F16K37/00
CPC分类号： F01D17/02 , F16K37/0083 , F16K37/0091 , Y10T137/8158 , Y10T137/8242 , Y10T137/8326
摘要： A diagnostic apparatus for diagnosising of a valve device in a turbine system comprises at least one of a pressure sensor for sensing hydraulic pressure in a hydraulic cylinder for driving a valve body of the valve device and a position sensor for sensing the displacement of the valve body, and a processing device for processing the output signal from the above-mentioned at least one sensor. The processing device has an offset computing device which receives a signal representing the actual operating state of the valve device obtained on the basis of the output signal from the at least one sensor and a signal corresponding to a reference value obtained under the normal operating state of the valve device. The offset computing device is operable to compute the offset between the signals received thereto. A judging device is provided for judging as to whether or not there is a symptom of a sticking in the valve device, in accordance with the output signal from the offset computing device.
摘要翻译：用于诊断涡轮机系统中的阀装置的诊断装置包括用于感测用于驱动阀装置的阀体的液压缸中的液压的压力传感器和用于感测阀体的位移的位置传感器中的至少一个以及用于处理来自上述至少一个传感器的输出信号的处理装置。该处理装置具有偏移计算装置，该偏移计算装置接收表示基于来自至少一个传感器的输出信号获得的阀装置的实际操作状态的信号，以及对应于在正常操作状态下获得的参考值的信号阀门装置。偏移计算装置可操作以计算接收到的信号之间的偏移。根据来自偏移计算装置的输出信号，提供判断装置，用于判断是否存在粘附在阀装置中的症状。

103. 发明授权

US4070772A Ground excavating apparatus 失效
标题翻译：地面挖掘装置
公开(公告)号：US4070772A
公开(公告)日：1978-01-31
申请号：US616290
申请日：1975-09-24
申请人： Mitsuteru Motomura , Chiaki Kojima , Hiroshi Ohta , Akira Nemoto
发明人： Mitsuteru Motomura , Chiaki Kojima , Hiroshi Ohta , Akira Nemoto
IPC分类号： E02F3/28 , E02F3/96 , E21D9/00 , E21D9/10
CPC分类号： E02F3/966 , E02F3/286 , E21D9/01 , E21D9/106
摘要： Such a ground excavating apparatus that conducts excavation of a soft stratum by means of a bucket and employs an impact crusher for the excavation of such a hard stratum as a rock bed or the like is disclosed.Introduced in the present application is a ground excavator of such a category that comprises a housing, a bucket boom properly set in place in the said housing in a manner of being capable of traveling forward and rearward, a bucket properly fitted in place on the front end section of the said bucket boom in a manner of being capable of inclining, and an impact crushing mechanism well capable of traveling forward and rearward by virtue of a hydraulic jack housed in the said bucket boom, and employs the said bucket and the said impact crushing mechanism in an alternate manner to best suit the nature of the ground to be excavated.
摘要翻译：公开了一种通过铲斗进行柔软地层的挖掘并采用冲击式破碎机来挖掘诸如岩石床等硬层的地面挖掘装置。

104. 发明授权

US08907420B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US08907420B2
公开(公告)日：2014-12-09
申请号：US12789008
申请日：2010-05-27
申请人： Wataru Saito , Syotaro Ono , Masakatsu Takashita , Yasuto Sumi , Masaru Izumisawa , Hiroshi Ohta
发明人： Wataru Saito , Syotaro Ono , Masakatsu Takashita , Yasuto Sumi , Masaru Izumisawa , Hiroshi Ohta
IPC分类号： H01L29/66 , H01L29/78 , H01L29/94 , H01L29/10 , H01L29/08 , H01L29/06
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/66712 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type formed on the first semiconductor layer and alternately arranged along at least one direction parallel to a surface of the first semiconductor layer; a first main electrode; a fourth semiconductor layer of the second conductivity type selectively formed in a surface of the second semiconductor layer and a surface of the third semiconductor layer; a fifth semiconductor layer of the first conductivity type selectively formed in a surface of the fourth semiconductor layer; a second main electrode; and a control electrode. At least one of the second and the third semiconductor layers has a dopant concentration profile along the one direction, the dopant concentration profile having a local minimum at a position except both ends thereof.
摘要翻译：功率半导体器件包括：第一导电类型的第一半导体层; 第一导电类型的第二半导体层和形成在第一半导体层上的第二导电类型的第三半导体层，并且沿着平行于第一半导体层的表面的至少一个方向交替布置; 第一主电极; 选择性地形成在第二半导体层的表面和第三半导体层的表面上的第二导电类型的第四半导体层; 选择性地形成在第四半导体层的表面中的第一导电类型的第五半导体层; 第二主电极; 和控制电极。第二和第三半导体层中的至少一个具有沿着一个方向的掺杂剂浓度分布，掺杂剂浓度分布在其两端以外的位置处具有局部最小值。

105. 发明授权

US08872261B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08872261B2
公开(公告)日：2014-10-28
申请号：US13607255
申请日：2012-09-07
申请人： Hiroyuki Irifune , Wataru Saito , Yasuto Sumi , Kiyoshi Kimura , Hiroshi Ohta , Junji Suzuki
发明人： Hiroyuki Irifune , Wataru Saito , Yasuto Sumi , Kiyoshi Kimura , Hiroshi Ohta , Junji Suzuki
IPC分类号： H01L29/66 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/404 , H01L29/7811
摘要： A semiconductor device includes first, second, and third semiconductor layers each having multiple diffusion layers. The first direction widths of the first diffusion layers are the same. The amount of impurity within the first diffusion layers gradually increases from the bottom end towards the top end of the first semiconductor layer. The first direction widths of the second diffusion layers are the same. The amounts of impurity within the second diffusion layers are the same. The first direction widths of the third diffusion layers are narrower than the first direction widths of the first diffusion layers and the first direction widths of the second diffusion layers at the same level, and gradually become narrower from the bottom end towards the top end of the third semiconductor layer. The amount of impurity within the third diffusion layers are the same.
摘要翻译：半导体器件包括各自具有多个扩散层的第一，第二和第三半导体层。第一扩散层的第一方向宽度是相同的。第一扩散层内的杂质量从第一半导体层的底端向顶端逐渐增加。第二扩散层的第一方向宽度相同。第二扩散层内的杂质量相同。第三扩散层的第一方向宽度比第一扩散层的第一方向宽度和第二扩散层的第一方向宽度在相同水平处窄，并且从第一扩散层的第一方向宽度逐渐变窄到第三半导体层。第三扩散层内的杂质量相同。

106. 发明申请

US20140227581A1 CELL, ASSEMBLED BATTERY, AND BATTERY-MOUNTED DEVICE 有权
标题翻译：电池，组装电池和电池安装设备
公开(公告)号：US20140227581A1
公开(公告)日：2014-08-14
申请号：US14241808
申请日：2011-08-29
申请人： Hiroshi Ohta
发明人： Hiroshi Ohta
IPC分类号： H01M2/06 , H01M2/02
CPC分类号： H01M2/06 , H01M2/02 , H01M2/022 , H01M2/024 , H01M2/22 , H01M2/24 , H01M2/26 , H01M2/30 , H01M2/305
摘要： Disclosed is a cell including: a closed-end tubular case for accommodating a power generation element; a lid for the case; a terminal electrode disposed outside of the case and used for connection with another cell; an extraction electrode passing through the lid and used to extract power of the power generation element to the outside of the case; and a stepped connection electrode disposed outside of the case, the stepped connection electrode having a first flat portion to which the terminal electrode is connected and a second flat portion which is located at a level different from the level of the first flat portion and to which the extraction electrode is connected. The first and second flat portions have regions overlapping each other as viewed in a direction orthogonal to the thickness of the first and second flat portions.
摘要翻译：公开了一种电池，包括：用于容纳发电元件的封闭端管状壳体; 一箱盖; 端子电极，设置在壳体的外部并用于与另一个电池连接; 通过所述盖并用于将所述发电元件的功率提取到所述壳体的外部的引出电极; 以及设置在所述壳体的外侧的阶梯状连接电极，所述阶梯状连接电极具有与所述端子电极连接的第一平坦部，以及位于与所述第一平坦部的高度不同的水平面的第二平坦部，引出电极连接。当与第一和第二平坦部分的厚度正交的方向观察时，第一和第二平坦部分具有彼此重叠的区域。

107. 发明授权

US08796272B2 Glycine transporter-inhibiting substances 有权
标题翻译：甘氨酸转运蛋白抑制物质
公开(公告)号：US08796272B2
公开(公告)日：2014-08-05
申请号：US14000261
申请日：2012-02-21
申请人： Minoru Moriya , Hiroshi Ohta , Shuji Yamamoto , Kumi Abe , Yuko Araki , Xiang-Min Sun , Daisuke Wakasugi
发明人： Minoru Moriya , Hiroshi Ohta , Shuji Yamamoto , Kumi Abe , Yuko Araki , Xiang-Min Sun , Daisuke Wakasugi
IPC分类号： A61K31/50 , A61K31/501
CPC分类号： C07D401/04 , C07D401/14 , C07D413/14 , C07D417/14
摘要： The present invention relates to novel compounds of formula [I] or pharmaceutically acceptable salts thereof: The compounds of the present invention are useful in the prevention or treatment of diseases such as schizophrenia, Alzheimer's disease, cognitive impairment, dementia, anxiety disorders (e.g., generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, post-traumatic stress disorder, specific phobias, acute stress disorder), depression, drug dependence, spasm, tremor, pain, Parkinson's disease, attention deficit hyperactivity disorder, bipolar disorder, eating disorder, or sleep disorders, which is based on the glycine uptake-inhibiting action.
摘要翻译：本发明涉及式[I]的新化合物或其药学上可接受的盐：本发明的化合物可用于预防或治疗诸如精神分裂症，阿尔茨海默氏病，认知障碍，痴呆，焦虑症（例如，广泛性焦虑症，恐慌症，强迫症，社交焦虑症，创伤后应激障碍，特异性恐惧症，急性应激障碍），抑郁症，药物依赖性，痉挛，震颤，疼痛，帕金森病，注意缺陷多动障碍，双相紊乱，进食障碍或睡眠障碍，其基于甘氨酸摄取抑制作用。

108. 发明授权

US08748025B2 Cell holding device, assembled battery, and vehicle 有权
标题翻译：电池保持装置，组合电池和车辆
公开(公告)号：US08748025B2
公开(公告)日：2014-06-10
申请号：US12990534
申请日：2009-03-31
申请人： Hiroshi Ohta
发明人： Hiroshi Ohta
IPC分类号： H01M2/02 , H01M2/10
CPC分类号： H01M2/1077 , H01M2/1083
摘要： In a cell holding device, engaging members (224) are disposed in an insertion cavity (222) into which an end portion of each cell (400) is inserted, such that the engaging members (224) are movable in a direction of insertion in which the cell (400) is inserted. The cell holding device also has guides (225) that push the engaging members (224) toward the inner radius of the insertion cavity (222) as the engaging members (224) move in the direction of insertion. With this arrangement, when the end portion of the cell (400) is inserted into the insertion cavity (222), the engaging members (224) sandwiched between the guides (225) and a side circumferential surface (403) of the cell (400) hold the end portion of the cell (400).
摘要翻译：在电池保持装置中，接合构件（224）设置在每个电池单元（400）的端部插入到其中的插入腔（222）中，使得接合构件（224）可以在插入方向上移动其中单元（400）被插入。电池保持装置还具有当接合构件（224）沿插入方向移动时将接合构件（224）朝向插入腔（222）的内半径推动的引导件（225）。利用这种结构，当电池（400）的端部插入到插入腔（222）中时，夹在引导件（225）和电池（400）的侧周面（403）之间的接合构件（224））保持电池单元（400）的端部。

109. 发明授权

US08680606B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US08680606B2
公开(公告)日：2014-03-25
申请号：US13424344
申请日：2012-03-19
申请人： Hiroshi Ohta , Yasuto Sumi , Kiyoshi Kimura , Junji Suzuki , Hiroyuki Irifune
发明人： Hiroshi Ohta , Yasuto Sumi , Kiyoshi Kimura , Junji Suzuki , Hiroyuki Irifune
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/4238 , H01L29/66712
摘要： A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer provided thereon, mutually separated columnar third semiconductor layers of a second conductivity type extending within the second semiconductor layer, island-like fourth semiconductor layers of the second conductivity type provided on the third semiconductor layers, fifth semiconductor layers of the first conductivity type, sixth semiconductor layers of the second conductivity type, a gate electrode, a first electrode, and a second electrode. The fifth semiconductor layers are selectively provided on the fourth semiconductor layers. The sixth semiconductor layer electrically connects two adjacent fourth semiconductor layers. The first electrode is in electrical connection with the first semiconductor. The second electrode is in electrical connection with the fourth semiconductor layers and the fifth semiconductor layers via the openings in the gate electrode.
摘要翻译：功率半导体器件包括第一导电类型的第一半导体层，设置在其上的第二半导体层，在第二半导体层内延伸的第二导电类型的相互分离的柱状第三半导体层，第二导电类型的岛状第四半导体层提供在第三半导体层上的第一半导体层，第一导电类型的第五半导体层，第二导电类型的第六半导体层，栅电极，第一电极和第二电极。第五半导体层选择性地设置在第四半导体层上。第六半导体层电连接两个相邻的第四半导体层。第一电极与第一半导体电连接。第二电极经由栅电极中的开口与第四半导体层和第五半导体层电连接。

110. 发明授权

US08616856B2 Air compressor of water injection type 有权
标题翻译：注水式空压机
公开(公告)号：US08616856B2
公开(公告)日：2013-12-31
申请号：US12709275
申请日：2010-02-19
申请人： Takehiro Matsuzaka , Hiroshi Ohta
发明人： Takehiro Matsuzaka , Hiroshi Ohta
IPC分类号： F04B39/06
CPC分类号： F04C29/0014 , F04B39/06 , F04B39/062 , F04C18/16 , F04C2210/128 , F04C2280/04
摘要： In a water injection air compressor including a compressor main body for compressing air, a water-feed line for feeding water to an actuation chamber in the compressor main body, an air release valve for releasing the compressed air from the compressor main body, and a control panel for executing an on-load operation mode in which water is fed into the actuation chamber and an air release valve is closed and a no-load operation mode in which the water is fed into the actuation chamber and the air release valve is opened, wherein the control panel further executes a dry operation mode in which the water is prevented from being fed into the actuation chamber and with the air release valve is opened.
摘要翻译：在包括用于压缩空气的压缩机主体的水注射空气压缩机中，将水供给到压缩机主体中的致动室的供水管线，用于从压缩机主体释放压缩空气的排气阀，以及控制面板，用于执行其中水被供给到致动室中的空载操作模式和空气释放阀关闭，以及空气操作模式，其中水被供给到致动室和排气阀打开其特征在于，所述控制面板进一步执行干式运转模式，在所述干式运转模式中，防止水进入所述致动室，并且所述排气阀打开。

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