专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明授权

US4323700A Process for preparing benzophenone derivatives 失效
标题翻译：制备二苯甲酮衍生物的方法
公开(公告)号：US4323700A
公开(公告)日：1982-04-06
申请号：US73108
申请日：1979-09-06
申请人： Mitsuru Kondo , Hiroshi Iwasaki , Kiyoshi Yasui , Makoto Miyake
发明人： Mitsuru Kondo , Hiroshi Iwasaki , Kiyoshi Yasui , Makoto Miyake
IPC分类号： C07C65/32 , B41M5/145 , B41M5/327 , C07C51/00 , C07C67/00 , C07C201/00 , C07C205/57 , C07C205/61 , C07C229/52 , C07C229/66 , C07D307/885 , C07D493/10 , C09B11/00 , C09B11/24 , C09B11/26 , C09B11/28 , G03G9/09 , C07C59/76
CPC分类号： G03G9/0928 , B41M5/145 , B41M5/327 , C07D307/885 , C07D493/10 , C09B11/245
摘要： A process is described for preparing benzophenone derivatives of a high purity in an extremely high yield from 3-phenylphthalide derivatives with the use of at least one oxidizing agent.
摘要翻译：描述了一种使用至少一种氧化剂从3-苯基苯酞衍生物制备高纯度二苯甲酮衍生物的方法。

102. 发明授权

US4256198A Acoustic apparatus 失效
标题翻译：声学仪器
公开(公告)号：US4256198A
公开(公告)日：1981-03-17
申请号：US927687
申请日：1978-07-25
申请人： Yasushi Kawakami , Hiroshi Iwasaki
发明人： Yasushi Kawakami , Hiroshi Iwasaki
IPC分类号： H04R9/06 , G10K11/16 , H04R1/02 , H04R1/22 , H04R1/28 , H04R7/00
CPC分类号： H04R1/288 , G10K11/165 , H04R1/22
摘要： A loudspeaker having a framework with a plurality of openings therein is fitted with an elastic body of a bitumen-containing urethane foam over the rearside of the framework to absorb the acoustic energy transmitted rearwardly from the speaker.
摘要翻译：具有其中具有多个开口的框架的扬声器在框架的后部装配有含沥青聚氨酯泡沫的弹性体，以吸收从扬声器向后传输的声能。

103. 发明授权

US4010055A Method of producing three-dimensionally shaped inflatable safety bag 失效
标题翻译：制造三维形充气安全袋的方法
公开(公告)号：US4010055A
公开(公告)日：1977-03-01
申请号：US584342
申请日：1975-06-06
申请人： Takashi Oka , Hiroshi Iwasaki , Eiichi Kato
发明人： Takashi Oka , Hiroshi Iwasaki , Eiichi Kato
IPC分类号： B60R21/16 , B60R21/237 , B65D75/08 , B31F1/00
CPC分类号： B60R21/231 , B65D75/08 , Y10T156/1049
摘要： A sheet material is initially formed into a flat and quadrilateral bag, the four sides of which are sealed. Each of the front and back sheets of the flat bag is pinched up and folded in two parts at each corner region along a line running through a point placed at a selected distance from the corner such that two imaginary and symmetrical lines drawn on the inner surface of the sheet meeting at this point and terminating respectively at the two adjacent sides of the corner region are overlapped each other, and then a joint is formed in the folded region of the sheet along the overlapped lines.
摘要翻译：片材最初形成为四边形的四边形袋，其四面密封。扁平袋的前后片中的每一个被夹紧并沿着穿过从角部选定距离放置的点的线在每个拐角区域处分成两部分折叠，使得在内表面上绘制的两条虚线和对称线在这一点上并且分别终止在角区域的两个相邻侧面处的片材会聚在一起，然后沿着重叠的线在片材的折叠区域中形成接合部。

104. 发明授权

US4010038A Process for producing microcapsules 失效
标题翻译：微胶囊生产工艺
公开(公告)号：US4010038A
公开(公告)日：1977-03-01
申请号：US563974
申请日：1975-04-01
申请人： Hiroshi Iwasaki , Shunsuke Shioi , Jujiro Kouno
发明人： Hiroshi Iwasaki , Shunsuke Shioi , Jujiro Kouno
IPC分类号： A01N25/28 , A61K49/04 , B01J13/10 , B41M5/165 , C11B9/00 , G03C1/00 , B01J13/02 , C09D11/00
CPC分类号： B01J13/10 , B41M5/165 , Y10T428/2984 , Y10T428/2989
摘要： In a process for producing microcapsules of complex hydrophilic colloid material enclosing fine particles of a hydrophobic substance, the improvement characterized in that:An acid-treated gelatin and at least one of carboxy-modified cellulose derivatives are used as the hydrophilic colloid materials, the amount of the cellulose derivative being 1/7 to 1/40 the amount of the gelatin by weight, the cellulose derivative having an average polymerization degree of 50 to 1,000 and a carboxyl substitution degree of 0.4 to 1.5, andThe coacervation of the colloid material solution is effected at a pH of 4.8 to 6.0.
摘要翻译：在生产包含疏水性物质的细颗粒的复合亲水胶体材料微胶囊的方法中，其改进之处在于：

105. 发明申请

US20140242336A1 IN-MOLD TRANSFER FILM 审中-公开
标题翻译：模内转印膜
公开(公告)号：US20140242336A1
公开(公告)日：2014-08-28
申请号：US14238566
申请日：2012-08-27
申请人： Yasuhito Mune , Hiroshi Iwasaki , Takeshi Sugie
发明人： Yasuhito Mune , Hiroshi Iwasaki , Takeshi Sugie
IPC分类号： B41M5/025 , B29C69/00
CPC分类号： B41M5/025 , B29C69/007 , B32B3/30 , B32B27/36 , B44C1/17 , Y10T428/24364
摘要： The present invention provides an in-mold transfer film that has an excellent gloss feel, is free from occurrence of blocking in a process for production of the transfer sheet, and has such a function that the film can be smoothly released from its boundary after completion of the in-mold transfer process. The in-mold transfer film of the present invention comprises a polyester film and a release layer formed on one surface of the polyester film, in which the polyester film is in the form of a laminated polyester film comprising at least three layers whose outermost layers both are formed of the same polyester composition, a number of projections present on a surface of the polyester film which have a height of not less than 0.05 μm is not more than 1900/mm2, and a number of projections present on a surface of the polyester film which have a height of not less than 0.6 μm is not less than 25/mm2.
摘要翻译：本发明提供了一种具有优良光泽感的模内转印膜，在转印片生产过程中不会发生堵塞，并且具有能够在完成之后从其边界平滑地释放膜的功能的模内转移过程。本发明的模内转印膜包括聚酯膜和形成在聚酯膜的一个表面上的剥离层，其中聚酯膜是层压聚酯膜的形式，其包含至少三层，其最外层均为由相同的聚酯组合物形成，存在于聚酯膜的表面上的高度不小于0.05μm的多个突起不大于1900 / mm 2，存在于聚酯表面上的多个突起高度不小于0.6μm的膜不小于25 / mm2。

106. 发明申请

US20120326074A1 SINTERED FERRITE MAGNET AND ITS PRODUCTION METHOD 有权
标题翻译：烧结磁铁及其生产方法
公开(公告)号：US20120326074A1
公开(公告)日：2012-12-27
申请号：US13583491
申请日：2011-03-09
申请人： Seiichi Hosokawa , Etsushi Oda , Hiroshi Iwasaki
发明人： Seiichi Hosokawa , Etsushi Oda , Hiroshi Iwasaki
IPC分类号： H01F1/01 , H01F41/02
CPC分类号： H01F1/11 , C01G51/68 , C01P2002/85 , C01P2004/04 , C01P2006/42 , C04B35/2633 , C04B35/2641 , C04B35/6262 , C04B35/6268 , C04B35/62685 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3227 , C04B2235/3241 , C04B2235/3272 , C04B2235/3274 , C04B2235/3277 , C04B2235/3409 , C04B2235/3418 , C04B2235/5445 , C04B2235/605 , C04B2235/6567 , C04B2235/6584 , C04B2235/6585 , C04B2235/767 , C04B2235/785 , C04B2235/786 , C04B2235/787 , C04B2235/80 , C04B2235/85 , H01F41/0266
摘要： A sintered ferrite magnet comprising a first granular ferrite compound phase containing Ca, La, Fe and Co and having a Curie temperature Tc1 between 415° C. and 430° C., and a second granular ferrite compound phase containing Sr, La, Fe and Co and having a Curie temperature Tc2 between 437° C. and 455° C., the volume ratio of the first ferrite compound phase being 50-90%, and the volume ratio of the second ferrite compound phase being 10-50%, with their total volume ratio being 95% or more.
摘要翻译：一种烧结铁氧体磁体，包括含有Ca，La，Fe和Co的第一粒状铁素体化合物相，居里温度Tc1为415℃至430℃，第二粒状铁素体化合物相含有Sr，La，Fe和 Co，居里温度Tc2在437℃和455℃之间，第一铁素体相的体积比为50-90％，第二铁素体相的体积比为10-50％，体积比为它们的总体积比为95％以上。

107. 发明授权

US07907451B2 Semiconductor storage device and method of manufacturing same 有权
标题翻译：半导体存储装置及其制造方法
公开(公告)号：US07907451B2
公开(公告)日：2011-03-15
申请号：US12665320
申请日：2008-12-08
申请人： Hiroshi Iwasaki
发明人： Hiroshi Iwasaki
IPC分类号： G11C11/34
CPC分类号： H01L21/28273 , G11C16/0408 , H01L27/11517 , H01L29/42324 , H01L29/42328 , H01L29/66825 , H01L29/7881
摘要： The disclosure of this application enhances the data writing speed of an electrically erasable and writable semiconductor memory. In a semiconductor storage device of this application, at a time of writing data, when a positive voltage lower than a voltage at control gate 30 is applied to potential control gate 28 formed inside tunnel oxide film 360 between p channel 22 of a transistor and floating gate 32, a potential barrier between p channel 22 of the transistor and floating gate 32 is lowered, and a time required for storing an electron in floating gate 30 is reduced. After data is stored, when 0 V or a negative voltage is applied to the potential control gate, a potential barrier for an electron moving from the floating gate to the channel of the transistor increases, thereby preventing erasure of data.
摘要翻译：本申请的公开内容增强了电可擦除和可写入的半导体存储器的数据写入速度。在本申请的半导体存储装置中，在写入数据时，当将低于控制栅极30处的电压的正电压施加到形成在晶体管的p沟道22之间的隧道氧化物膜360内的电位控制栅极28，并且浮置栅极32，晶体管的p沟道22和浮置栅极32之间的势垒降低，并且在浮动栅极30中存储电子所需的时间减小。在存储数据之后，当向电位控制栅极施加0V或负电压时，从浮置栅极向晶体管的沟道移动的电子的势垒增加，从而防止数据的擦除。

108. 发明授权

US07837893B2 Oxide-type, magnetic material and its production method, and sintered ferrite magnet and its production method 有权
标题翻译：氧化物型，磁性材料及其制备方法，烧结铁氧体磁铁及其制备方法
公开(公告)号：US07837893B2
公开(公告)日：2010-11-23
申请号：US11814266
申请日：2006-03-10
申请人： Takashi Takami , Hiroshi Iwasaki , Naoki Mochi
发明人： Takashi Takami , Hiroshi Iwasaki , Naoki Mochi
IPC分类号： H01F1/11
CPC分类号： H01F1/11 , C04B35/2633 , C04B35/2641 , C04B35/6262 , C04B35/6268 , C04B35/62685 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3275 , C04B2235/3277 , C04B2235/3409 , C04B2235/3418 , C04B2235/5292 , C04B2235/5436 , C04B2235/5445 , C04B2235/5463 , C04B2235/605 , C04B2235/656 , C04B2235/6585 , C04B2235/72 , C04B2235/767 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/788 , H01F41/0273 , Y10T428/2982
摘要： A sintered ferrite magnet having an M-type ferrite structure and comprising Ca, an R element which is at least one rare earth element indispensably including La, Ba, Fe and Co as indispensable elements, which is represented by Ca1-x-yRxBayFe2n-zCoz, wherein (1-x-y), x, y, z and n are numbers representing the amounts of Ca, the R element, Ba and Co and a molar ratio, meeting 0.2≦x≦0.65, 0.001≦y≦0.2, 0.03≦z≦0.65, and 4≦n≦7.
摘要翻译：一种具有M型铁氧体结构并包含Ca，R元素的烧结铁氧体磁体，其是至少一种不可缺少的包含La，Ba，Fe和Co的稀土元素，作为不可缺少的元素，由Ca1-x-yRxBayFe2n-zCoz ，其中（1-xy），x，y，z和n是表示Ca，R元素，Ba和Co的量和摩尔比的数字，满足0.2＆nlE; x＆lt; lI; 0.65,0.001和nlE; y＆ 0.03＆nlE; z＆nlE; 0.65和4＆nlE; n＆nlE; 7。

109. 发明授权

US07768111B2 Card adapter for use with a storage apparatus 有权
标题翻译：用于存储设备的卡适配器
公开(公告)号：US07768111B2
公开(公告)日：2010-08-03
申请号：US12007002
申请日：2008-01-04
申请人： Hiroshi Iwasaki
发明人： Hiroshi Iwasaki
IPC分类号： B42D15/02 , G06K19/00 , H01L29/41 , H01L23/495 , H05K7/10
CPC分类号： G06K19/07739 , G06K19/07743 , H01L23/3121 , H01L23/49855 , H01L24/48 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/4847 , H01L2224/48472 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01079 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： A storage apparatus 10 is disclosed, that comprises a wiring substrate 11 having a first surface and a second surface, a flat type external connection terminal 12a disposed on the first surface of the wiring substrate 11, a semiconductor device 14 disposed on the second surface of the wiring substrate 11 and having a connection terminal 14a connected to the flat type external connection terminal 12a, a molding resin 15 for coating the semiconductor device 14 on the second surface of the wiring substrate 11, a card type supporting frame 10a having a concave portion or a hole portion fitting the wiring substrate 11, the semiconductor device 14, and the molding resin 15 in such a manner that the flat type external connection terminal 12a is exposed to the first surface of the wiring substrate 11, and adhesive resin a adhering integrally the flat type external connection terminal 12a, the wiring substrate 11, the semiconductor device 14, the molding resin 15, and the card type supporting frame 10a. In addition, the storage apparatus 10 can be combined with a card type supporting means 21 that supports detachably with the flat type external connection terminal 12a exposed to one of the surfaces so as to be used as a card type storage apparatus 20 having bigger size.
摘要翻译：公开了一种存储装置10，其包括具有第一表面和第二表面的布线基板11，布置在布线基板11的第一表面上的平面型外部连接端子12a，设置在布线基板11的第二表面上的半导体装置14 布线基板11并具有连接到扁平型外部连接端子12a的连接端子14a，用于在布线基板11的第二表面上涂覆半导体器件14的模制树脂15，具有凹部的卡式支撑框架10a 或配线基板11，半导体装置14以及模塑树脂15的孔部，使平面型外部连接端子12a暴露于布线基板11的第一面，粘合树脂a一体地粘接扁平型外部连接端子12a，布线基板11，半导体装置14，成型树脂15，以及支持f型卡 ame ame ame ame 此外，存储装置10可以与能够与暴露于一个表面的平面型外部连接端子12a可拆卸地支撑的卡式支撑装置21组合，以用作具有较大尺寸的卡式存储装置20。

110. 发明授权

US07659607B2 Accessible electronic storage apparatus for use with support frame 有权
标题翻译：用于支撑框架的无障碍电子存储装置
公开(公告)号：US07659607B2
公开(公告)日：2010-02-09
申请号：US12007001
申请日：2008-01-04
申请人： Hiroshi Iwasaki
发明人： Hiroshi Iwasaki
IPC分类号： H01L29/41 , H01L23/495 , B42D15/02 , G06K19/00
CPC分类号： G06K19/07739 , G06K19/07743 , H01L23/3121 , H01L23/49855 , H01L24/48 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/4847 , H01L2224/48472 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01079 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： A storage apparatus 10 is disclosed, that comprises a wiring substrate 11 having a first surface and a second surface, a flat type external connection terminal 12a disposed on the first surface of the wiring substrate 11, a semiconductor device 14 disposed on the second surface of the wiring substrate 11 and having a connection terminal 14a connected to the flat type external connection terminal 12a, a molding resin 15 for coating the semiconductor device 14 on the second surface of the wiring substrate 11, a card type supporting frame 10a having a concave portion or a hole portion fitting the wiring substrate 11, the semiconductor device 14, and the molding resin 15 in such a manner that the flat type external connection terminal 12a is exposed to the first surface of the wiring substrate 11, and adhesive resin a adhering integrally the flat type external connection terminal 12a, the wiring substrate 11, the semiconductor device 14, the molding resin 15, and the card type supporting frame 10a. In addition, the storage apparatus 10 can be combined with a card type supporting means 21 that supports detachably with the flat type external connection terminal 12a exposed to one of the surfaces so as to be used as a card type storage apparatus 20 having bigger size.
摘要翻译：公开了一种存储装置10，其包括具有第一表面和第二表面的布线基板11，布置在布线基板11的第一表面上的平面型外部连接端子12a，设置在布线基板11的第二表面上的半导体装置14 布线基板11并具有连接到扁平型外部连接端子12a的连接端子14a，用于在布线基板11的第二表面上涂覆半导体器件14的模制树脂15，具有凹部的卡式支撑框架10a 或配线基板11，半导体装置14以及模塑树脂15的孔部，使平面型外部连接端子12a暴露于布线基板11的第一面，粘合树脂a一体地粘接扁平型外部连接端子12a，布线基板11，半导体装置14，成型树脂15，以及支持f型卡 ame ame ame ame 此外，存储装置10可以与能够与暴露于其中一个表面的平面型外部连接端子12a可拆卸地支撑的卡式支撑装置21组合，以用作具有较大尺寸的卡式存储装置20。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式