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101. 发明公开

EP3946324A1 INHIBITORS OF HISTONE DEACETYLASE-3 USEFUL FOR THE TREATMENT OF CANCER, INFLAMMATION, NEURODEGENERATION DISEASES AND DIABETES 审中-公开
公开(公告)号：EP3946324A1
公开(公告)日：2022-02-09
申请号：EP20783686.7
申请日：2020-03-30
申请人： Merck Sharp & Dohme Corp.
发明人： LIU, Jian , YU, Younong , KOZLOWSKI, Joseph, A. , SHA, Deyou , YU, Wensheng , KELLY, Joseph, M. , WOLKENBERG, Scott, E.
IPC分类号： A61K31/4178 , A61K31/4439 , A61K31/4172

102. 发明公开

EP3876928A2 INHIBITORS OF HISTONE DEACETYLASE USEFUL FOR THE TREATMENT OR PREVENTION OF HIV INFECTION 审中-实审转让
公开(公告)号：EP3876928A2
公开(公告)日：2021-09-15
申请号：EP19882865.9
申请日：2019-11-04
申请人： Merck Sharp & Dohme Corp.
发明人： YU, Wensheng , KOZLOWSKI, Joseph, A. , CLAUSEN, Dane James , LIU, Jian , YU, Younong , WANG, Ming , LI, Bing
IPC分类号： A61K31/41 , A61K31/422 , A61P31/18

104. 发明公开

EP3082809A1 BTK INHIBITORS 有权转让
标题翻译： BTK-缝边
公开(公告)号：EP3082809A1
公开(公告)日：2016-10-26
申请号：EP14870699.7
申请日：2014-12-16
申请人： Merck Sharp & Dohme Corp.
发明人： LIU, Jian , KIM, Ronald, M. , KOZLOWSKI, Joseph , KRIKORIAN, Arto, D. , ANAND, Rajan
IPC分类号： A61K31/437 , A61P19/02 , A61P3/10
CPC分类号： C07D471/04 , A61K31/4375 , A61K31/4545 , A61K45/06 , C07D519/00
摘要： The present invention provides Bruton's Tyrosine Kinase (Btk) inhibitor compounds according to Formula I or pharmaceutically acceptable salts thereof Formula I or a pharmaceutically acceptable salt thereof or to pharmaceutical compositions comprising these compounds and to their use in therapy. In particular, the present invention relates to the use of Btk inhibitor compounds in the treatment of Btk mediated disorders.
摘要翻译：本发明提供了根据式I的布鲁顿酪氨酸激酶（Btk）抑制剂化合物或其药学上可接受的式I或其药学上可接受的盐或包含这些化合物的药物组合物及其在治疗中的用途。特别地，本发明涉及Btk抑制剂化合物在治疗Btk介导的病症中的用途。

105. 发明公开

EP2178537A1 BETA CARBOLINE DERIVATIVES AS ANTIDIABETIC COMPOUNDS 审中-公开
标题翻译： β-咔衍生物作为抗糖尿病化合物
公开(公告)号：EP2178537A1
公开(公告)日：2010-04-28
申请号：EP08780184.1
申请日：2008-07-15
申请人： Merck Sharp & Dohme Corp.
发明人： DOBBELAAR, Peter, H. , DU, Wu , GUO, Liangqin , HAGMANN, William, K. , HE, Shuwen , JIAN, Tianying , LIU, Jian , NARGUND, Ravi, P. , PASTERNAK, Alexander , SHAH, Shrenik, K. , TRUONG, Quang, T. , YE, Zhixiong , DELLUREFICIO, James , BAKSHI, Raman
IPC分类号： A61K31/535
CPC分类号： C07D471/04
摘要： Beta-carboline derivatives of structural formula I are selective antagonists of the somatostatin subtype receptor 3 (SSTR3) and are useful for the treatment of Type 2 diabetes mellitus and of conditions that are often associated with this disease, including hyperglycemia, insulin resistance, obesity, lipid disorders, and hypertension. The compounds are also useful for the treatment of depression and anxiety.

106. 发明公开

EP2821801A1 MULTI-NODE SYNCHRONOUS ON-SITE TEST METHOD 审中-公开
标题翻译：同步MEHRKNOTEN-VORORT-TESTVERFAHREN
公开(公告)号：EP2821801A1
公开(公告)日：2015-01-07
申请号：EP12870235.4
申请日：2012-05-02
申请人： Jiangxi Electric Power Science Research Institute , Pei, Maolin , Sun, Ping , Zhang, Chunqiang , Liu, Jian , Hu, Haimei , Zhu, Ming
发明人： PEI, Maolin , SUN, Ping , ZHANG, Chunqiang , LIU, Jian , HU, Haimei , ZHU, Ming
IPC分类号： G01R31/00 , G01R35/00
CPC分类号： G01R31/40 , G01R21/133 , H02J13/0079
摘要： A multi-node synchronous on-site test method, the method comprising: using GPS time as time reference, and conducting synchronous on-site tests on the devices to be tested and systems distributed at different places at an appointed time; controlling the synchronous phase control simulation devices distributed at multiple nodes via a synchronous test control center; within a uniform time section, synchronously outputting secondary side AC simulation signals, and simulating various actual operating conditions, thus achieving the detection of the monitoring and control performances of various dynamic monitoring and control systems, and ensuring the normal functions of the systems. The method of the present invention is able to conduct multi-node dynamic simulation test with synchronized GPS time, and achieves the detection of large-area multi-node monitoring and control systems. The present invention is suitable for the test of a wide area measurement system (WAMS) function, the simulation test of a damping control function, the simulation test of transiently stable state analysis and control functions, the simulation test of voltage stabilization and control functions, the simulation test of an islanding control function, the simulation test of wide area protection system functions and the like.
摘要翻译：一种多节点同步现场测试方法，该方法包括：使用GPS时间作为时间参考，对要测试的设备进行同步现场测试，并在指定时间内在不同地点分配系统; 通过同步测试控制中心控制分布在多个节点的同步相位控制仿真设备; 在均匀时间段内同步输出二次侧交流模拟信号，模拟各种实际运行状况，实现对各种动态监控系统的监控性能的检测，确保系统的正常功能。本发明的方法能够以同步GPS时间进行多节点动态模拟测试，实现了大面积多节点监控系统的检测。本发明适用于广域测量系统（WAMS）功能的测试，阻尼控制功能的仿真测试，瞬态稳态分析和控制功能的仿真测试，稳压控制功能的仿真测试，孤岛控制功能的仿真测试，广域保护系统功能的仿真测试等。

107. 发明公开

EP1384022A2 NUCLEIC ACID AMPLIFICATION UTILIZING MICROFLUIDIC DEVICES 审中-公开
标题翻译：利用微流体装置的核酸扩增
公开(公告)号：EP1384022A2
公开(公告)日：2004-01-28
申请号：EP02763966.5
申请日：2002-04-05
申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY , Enzelberger, Markus M. , Hansen, Carl L. , Liu, Jian , Quake, Stephen R. , Ma, Chiem
发明人： ENZELBERGER, Markus, M. , HANSEN, Carl, L. , LIU, Jian , QUAKE, Stephen, R. , MA, Chiem
IPC分类号： F16K17/00 , F04B19/24 , F04B17/00 , F28D21/00 , C12M1/00 , C12P19/34 , C12Q1/68 , C23C16/00 , F27B5/14 , G01N21/01 , G01N27/26 , G01N27/447 , C07K1/04 , C07K17/06 , C07K17/14 , B01J19/00
CPC分类号： C12Q1/68 , B01F5/102 , B01F5/108 , B01F13/0059 , B01F15/06 , B01L3/50273 , B01L3/502738 , B01L7/525 , B01L9/527 , B01L2300/0861 , B01L2300/088 , B01L2300/0883 , B01L2300/0887 , B01L2300/123 , B01L2300/1822 , B01L2300/1827 , B01L2300/1838 , B01L2400/0481 , B01L2400/0655 , C12Q1/6844 , C12Q3/00 , C12Q2565/629
摘要： The present invention provides microfluidic devices and methods using the same in various types of thermal cycling reactions. Certaom devices include a rotary microfluidic channel and a plurality of temperature regions at different locations along the rotary microfluidic channel at which temperature is regulated. Solution can be repeatedly passed through the temperature regions such that the solution is exposed to different temperatures. Other microfluidic devices include an array of reaction chambers formed by intersecting vertical and horizontal flow channels, with the ability to regulate temperature at the reaction chambers. The microfluidic devices can be used to conduct a number of different analyses, including various primer extension reactions and nucleic acid amplification reactions.
摘要翻译：本发明提供了在各种类型的热循环反应中使用其的微流体装置和方法。 Certaom装置包括旋转微流体通道和沿着旋转微流体通道的不同位置处的多个温度区域，温度在该不同位置被调节。溶液可以重复通过温度区域，使溶液暴露于不同的温度。其他微流体装置包括通过相交的垂直和水平流动通道形成的反应室阵列，其具有调节反应室温度的能力。微流体装置可用于进行许多不同的分析，包括各种引物延伸反应和核酸扩增反应。

108. 发明申请

WO2013020589A1 ADJUSTABLE MASK 审中-公开
标题翻译：可调面膜
公开(公告)号：WO2013020589A1
公开(公告)日：2013-02-14
申请号：PCT/EP2011/063714
申请日：2011-08-09
申请人： APPLIED MATERIALS, INC. , SCHEER, Evelyn , HANIKA, Markus , LINDENBERG, Ralph , BENDER, Marcus , LOPP, Andreas , SCHWANITZ, Konrad , PIERALISI, Fabio , LIU, Jian
发明人： SCHEER, Evelyn , HANIKA, Markus , LINDENBERG, Ralph , BENDER, Marcus , LOPP, Andreas , SCHWANITZ, Konrad , PIERALISI, Fabio , LIU, Jian
IPC分类号： C23C14/04 , C23C16/04
CPC分类号： C23C14/042 , C23C16/042
摘要： An deposition apparatus for forming a deposition material layer on a substrate is described. The deposition apparatus includes a substrate support adapted for holding a substrate; and an edge (660) exclusion mask (640) for covering a periphery of the substrate (610) during layer deposition. The mask has at least one frame portion defining an aperture. The at least one frame portion of the mask is adapted for being moved (670,680) with respect to the substrate depending on the amount of deposition material deposited on the at least one frame portion of the mask. Further, a method for depositing a deposition material layer on a substrate using an edge exclusion mask is described.
摘要翻译：描述了用于在基板上形成沉积材料层的沉积装置。沉积设备包括适于保持衬底的衬底支撑件; 以及用于在层沉积期间覆盖衬底（610）的周边的边缘（660）排除掩模（640）。掩模具有限定孔的至少一个框架部分。掩模的至少一个框架部分适于相对于基板移动（670,680），这取决于沉积在掩模的至少一个框架部分上的沉积材料的量。此外，描述了使用边缘排除掩模在基板上沉积沉积材料层的方法。

109. 发明申请

WO2010106432A2 DEPOSITION APPARATUS WITH HIGH TEMPERATURE ROTATABLE TARGET AND METHOD OF OPERATING THEREOF 审中-公开
标题翻译：具有高温可旋转目标的沉积装置及其操作方法
公开(公告)号：WO2010106432A2
公开(公告)日：2010-09-23
申请号：PCT/IB2010/000598
申请日：2010-03-19
申请人： APPLIED MATERIALS, INC. , MUELLER, Joachim , TRASSL, Roland , LIU, Jian
发明人： MUELLER, Joachim , TRASSL, Roland , LIU, Jian
IPC分类号： H01L21/203
CPC分类号： C23C14/34 , C23C14/3407 , C23C14/3421 , C23C14/35 , C23C14/541 , H01J37/32724 , H01J37/34 , H01J37/3405
摘要： A deposition apparatus (100) and a method for sputtering material on a substrate is provided with a substrate holder (110) for holding the substrate, a rotatable target (120) adapted for being sputtered, and a heating system including a back side heating (130) for heating the substrate from the back and a front side heating for heating the substrate from the front. The rotatable target acts as the front side heating and is adapted for heating the substrate to a temperature of at least 100°C.
摘要翻译：沉积设备（100）和在衬底上溅射材料的方法设置有用于保持衬底的衬底保持器（110），适于溅射的可旋转靶（120）和包括背侧加热（ 130），用于从背面加热基板和从前方加热基板的正面加热。可旋转的靶用作前侧加热，适于将基底加热到至少100℃的温度。

110. 发明申请

WO2009101150A1 TRANSISTOR 审中-公开
标题翻译：晶体管
公开(公告)号：WO2009101150A1
公开(公告)日：2009-08-20
申请号：PCT/EP2009/051660
申请日：2009-02-12
申请人： X-FAB SEMICONDUCTOR FOUNDRIES AG , HU, Yong Hai , KHO, Elizabeth Ching Tee , LIU, Zheng Chao , PAL, Deb Kumar , TIONG, Michael Mee Gouh , LIU, Jian , KEE, Kia Yaw , LAU, William Siang Lim
发明人： HU, Yong Hai , KHO, Elizabeth Ching Tee , LIU, Zheng Chao , PAL, Deb Kumar , TIONG, Michael Mee Gouh , LIU, Jian , KEE, Kia Yaw , LAU, William Siang Lim
IPC分类号： H01L29/06 , H01L29/423 , H01L29/78
CPC分类号： H01L29/7834 , H01L29/0653 , H01L29/42368 , H01L29/7835
摘要： A Metal Oxide Semiconductor (MOS) transistor comprising: a source; a gate; and a drain, the source, gate and drain being located in or on a well structure of a first doping polarity located in or on a substrate; wherein at least one of the source and the drain comprises a first structure comprising: a first region forming a first drift region, the first region being of a second doping polarity opposite the first doping polarity; a second region of the second doping polarity in or on the first region, the second region being a well region and having a doping concentration which is higher than the doping concentration of the first region; and a third region of the second doping polarity in or on the second region. Due to the presence of the second region the transistor may have a lower ON resistance when compared with a similar transistor which does not have the second region. The breakdown voltage may be influenced only to a small extent.
摘要翻译：一种金属氧化物半导体（MOS）晶体管，包括：源极; 一个门以及漏极，源极，栅极和漏极位于位于衬底中或衬底上的第一掺杂极性的阱结构中或其上; 其中所述源极和漏极中的至少一个包括第一结构，所述第一结构包括：形成第一漂移区的第一区，所述第一区具有与所述第一掺杂极性相反的第二掺杂极性; 所述第二区域是所述第二区域中的第二掺杂极性的第二区域，所述第二区域是阱区并具有高于所述第一区域的掺杂浓度的掺杂浓度; 以及在第二区域中或第二区域上的第二掺杂极性的第三区域。由于存在第二区域，与不具有第二区域的类似晶体管相比，晶体管可能具有较低的导通电阻。击穿电压可能仅在很小程度上受到影响。

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