会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 107. 发明申请
    • AGOMELATINE INTERMEDIATES AND PREPARATION METHOD THEREOF
    • AGOMELATINE中间体及其制备方法
    • US20130267738A1
    • 2013-10-10
    • US13702388
    • 2011-06-08
    • Peng ZhangYu HuangZhedong YuanHanbin ShanXiong Yu
    • Peng ZhangYu HuangZhedong YuanHanbin ShanXiong Yu
    • C07C231/06C07C233/22
    • C07C231/06C07C231/12C07C233/18C07C233/22C07C2602/10
    • The present invention relates to the intermediate compounds for preparation of agomelatine, as well as the preparation methods thereof. The intermediate of the present invention for preparation of agomelatine is compound A as shown in the following formula. Also provided are two novel intermediate compounds. When we use these new intermediate compounds to prepare agomelatine, it is simple to manipulate, well-controlled and with high purity, without complicated operations such as rectification and column chromatography separation, and suitable for industrial production. Meanwhile, the preparation methods of the two new intermediates themselves is simple and high yield, only using the most commonly-used 7-methoxy-tetralone as original starting material and undergoing one step of reaction to obtain the intermediates, followed by one more step of converting the intermediate compounds to desired product agomelatine. Said reaction processes are greatly simplified, with the reaction yield being improved and the difficulty in purification of previous method being overcome, as compare with the previous technique for preparation of agomelatine. Typically, the yield of the present invention is over 70%.
    • 本发明涉及用于制备agomelatine的中间体化合物及其制备方法。 本发明的用于制备agomelatine的中间体是下式所示的化合物A. 还提供两种新型中间体化合物。 当我们使用这些新的中间体化合物来制备agomelatine时,其操作简单,控制良好,纯度高,无需精馏和柱层析分离等复杂操作,适用于工业生产。 同时,两种新中间体本身的制备方法简单高产,仅使用最常用的7-甲氧基 - 四氢萘酮作为起始原料,经过一步反应得到中间体,再加入一步 将中间体化合物转化成所需的产物agomelatine。 所述反应过程被大大简化,与先前用于制备agMelatine的技术相比,反应产率提高并克服了先前方法的纯化困难。 通常,本发明的产率超过70%。
    • 110. 发明申请
    • APPARATUS FOR FABRICATING IB-IIIA-VIA2 COMPOUND SEMICONDUCTOR THIN FILMS
    • 用于制备IB-IIIA-VIA2化合物半导体薄膜的装置
    • US20130008380A1
    • 2013-01-10
    • US13610798
    • 2012-09-11
    • Chia-Chih CHUANGYu Huang
    • Chia-Chih CHUANGYu Huang
    • H01L21/203
    • H01L21/02568C23C14/0623C23C14/228C23C14/24H01L21/02614
    • An apparatus for fabricating IB-IIIA-VIA2 compound semiconductor thin films is provided, including a reaction chamber, a pressure control unit connected with the reaction chamber, a pedestal disposed in the reaction chamber wherein the at least one substrate includes elements of group IB and group IIIA, a first group VIA element supply unit connecting with the reaction chamber for providing vaporized first group VIA elements into the reaction chamber, and a plasma unit disposed in the reaction chamber. In one embodiment, during a reaction in the reaction chamber, the vaporized first group VIA elements flow through the high density plasma region and transform into ionized first group VIA elements, and the ionized first group VIA elements diffuse into the at least one substrate comprising elements of group IB and group IIIA to form a IB-IIIA-VIA2 compound semiconductor thin film thereover.
    • 提供一种用于制造IB-IIIA-VIA2化合物半导体薄膜的装置,包括反应室,与反应室连接的压力控制单元,设置在反应室中的基座,其中至少一个基板包括组1B和 组IIIA,与反应室连接的用于将蒸发的第一组VIA元件提供到反应室中的第一组VIA元件供应单元和设置在反应室中的等离子体单元。 在一个实施方案中,在反应室中的反应期间,蒸发的第一组VIA元素流过高密度等离子体区域并转化成电离的第一组VIA元素,并且离子化的第一组VIA元素扩散到至少一个包含元素 的IB和IIIA族以形成IB-IIIA-VIA2化合物半导体薄膜。