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    • 101. 发明授权
    • Semiconductor integrated circuit
    • 半导体集成电路
    • US6031778A
    • 2000-02-29
    • US899306
    • 1997-07-23
    • Hiroshi MakinoHiroaki Suzuki
    • Hiroshi MakinoHiroaki Suzuki
    • G11C11/407G11C7/00G11C7/06G11C11/412H01L21/8238H01L27/092H03K3/012H03K19/00H03K19/0948
    • H03K3/012G11C11/412G11C7/00G11C7/065
    • A semiconductor integrated circuit capable of eliminating a problem of a conventional semiconductor integrated circuit in that although a power saving mode can be applied normally to a combination circuit, it cannot be applied to a sequential circuit because the sequential circuit operates abnormally in the power saving mode, eliminating its holding data, in the conventional semiconductor integrated circuit. The semiconductor integrated circuit has a controller for varying the threshold voltages of field effect transistors included in the sequential circuit so that the controller places the threshold voltages at a low level in an operating mode to speed up the data write and read, and places them at a high level in an idling mode to reduce leakage currents. This makes it possible to prevent the data held in the sequential circuit from being corrupted and eliminated, and to implement a low power consumption.
    • 能够消除常规半导体集成电路的问题的半导体集成电路,其中尽管省电模式可以正常地应用于组合电路,但是由于顺序电路在省电模式下异常地运行,所以不能应用于顺序电路 ,消除其持有数据,在传统的半导体集成电路中。 半导体集成电路具有用于改变包括在顺序电路中的场效应晶体管的阈值电压的控制器,使得控制器将阈值电压置于操作模式中的低电平以加速数据写入和读取,并将它们放置在 空闲模式下的高电平以减少漏电流。 这使得可以防止顺序电路中保持的数据被破坏和消除,并且实现低功耗。
    • 103. 发明授权
    • Electronic circuit device
    • 电子电路装置
    • US5877928A
    • 1999-03-02
    • US905220
    • 1997-08-01
    • Hiroshi Makino
    • Hiroshi Makino
    • H01L27/04G05F3/20H01L21/822H02J1/00H02M9/04H03F1/00H03K19/00H02H3/20
    • H03K19/0008Y10T307/406Y10T307/445
    • First and second terminals between which a predetermined source voltage is applied and between which are connected, a plurality of electronic circuit blocks connected in series, and a plurality of semiconductor devices which are turned on when voltages exceeding predetermined threshold voltages thereof are applied thereto. The sum of threshold voltages of the plurality of semiconductor devices is higher than the source voltage. The semiconductor devices are forward-connected in series between the first terminal and the second terminal, wherein connection points among the plurality of electronic circuit blocks connected in series are connected to selected connection points among the plurality of semiconductor devices connected in series so that at least one of the semiconductor devices is connected in parallel in respective one of the plurality of electronic circuit blocks.
    • 第一和第二端子之间施加了预定的源极电压并且在其间连接,串联连接的多个电子电路块以及当施加超过其预定阈值电压时导通的多个半导体器件。 多个半导体器件的阈值电压之和高于源极电压。 半导体器件串联在第一端子和第二端子之间,其中串联连接的多个电子电路块中的连接点连接到串联连接的多个半导体器件中的选定的连接点,使得至少 半导体器件中的一个在多个电子电路块的相应一个中并联连接。
    • 106. 发明授权
    • Method for removing water vapor from water vapor-containing gas
    • 从含水蒸汽气体中除去水蒸汽的方法
    • US4718921A
    • 1988-01-12
    • US918006
    • 1986-10-10
    • Hiroshi MakinoKanji Nakagawa
    • Hiroshi MakinoKanji Nakagawa
    • B01D53/22B01D53/26B01D71/64
    • B01D71/64B01D53/22B01D53/228B01D53/268B01D63/02B01D2319/04
    • A water vapor-containing gas is separated to a fraction thereof having an increased content of water vapor and a remaining fraction thereof having a decreased content of water vapor by a gas separating device which has at least one gas separating membrane having gas feed and delivery surfaces and a ratio P.sub.H.sbsb.2.sub.O /P.sub.CH.sbsb.4 of water vapor-permeating rate P.sub.H.sbsb.2.sub.O to methane gas permeating rate P.sub.CH.sbsb.4 of 200 or more, and preferably, made by an aromatic imide polymer, in such a manner that (1) a water vapor-containing feed gas is fed to a feed side of the gas separating device; (2) the feed gas is flowed along the gas feed surface of the gas separating membrane to allow a fraction of the feed gas to permeate through the gas separating membrane; (3) a drying gas containing 300 ppm or less of water vapor is fed to a delivery side of the gas separating device; (4) the fed drying gas is flowed along the delivery surface of the gas separating membrane to promote the permeation of water vapor through the gas separating membrane; (5) the permeated gas fraction is collected together with the flowed drying gas at the delivery side of the gas separating device; and (6) a remaining gas fraction not permeated through the gas separating membrane and having a decreased content of water vapor is recovered from the feed side of the gas separating device.