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101. 发明授权

US08399315B2 Semiconductor structure and method for manufacturing the same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US08399315B2
公开(公告)日：2013-03-19
申请号：US13062911
申请日：2010-09-26
申请人： Haizhou Yin , Zhijiong Luo , Huilong Zhu
发明人： Haizhou Yin , Zhijiong Luo , Huilong Zhu
IPC分类号： H01L21/84
CPC分类号： H01L29/78687 , H01L29/66545 , H01L29/66621 , H01L29/66772
摘要： The present application discloses a semiconductor structure and a method for manufacturing the same. The semiconductor structure comprises a semiconductor substrate; an epitaxial semiconductor layer formed on two side portions of the semiconductor substrate; a gate stack formed at a central position on the semiconductor substrate and abutting the epitaxial semiconductor layer, the gate comprising a gate conductor layer and a gate dielectric layer which is sandwiched between the gate conductor layer and the semiconductor substrate and surrounding the lateral surfaces of the gate conductor layer; and a sidewall spacer formed on the epitaxial semiconductor layer and surrounding the gate. The method for manufacturing the above semiconductor structure comprises forming raised source/drain regions in the epitaxial semiconductor layer utilizing the sacrificial gate. The semiconductor structure and the method for manufacturing the same can simplify the fabrication process for an ultra-thin SOI transistor and reduce the ON-state resistance and power consumption of the transistor.
摘要翻译：本申请公开了一种半导体结构及其制造方法。半导体结构包括半导体衬底; 形成在所述半导体衬底的两个侧面上的外延半导体层; 形成在所述半导体衬底上的中心位置并与所述外延半导体层邻接的栅极叠层，所述栅极包括栅极导体层和栅极电介质层，所述栅极介电层夹在所述栅极导体层和所述半导体衬底之间，栅极导体层; 以及形成在外延半导体层上并围绕栅极的侧壁间隔物。制造上述半导体结构的方法包括利用牺牲栅极在外延半导体层中形成凸起的源/漏区。半导体结构及其制造方法可以简化超薄SOI晶体管的制造工艺，并降低晶体管的导通电阻和功耗。

102. 发明申请

US20130062672A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130062672A1
公开(公告)日：2013-03-14
申请号：US13503693
申请日：2011-11-18
申请人： Huilong Zhu , Haizhou Yin , Zhijiong Luo
发明人： Huilong Zhu , Haizhou Yin , Zhijiong Luo
IPC分类号： H01L21/20 , H01L29/78
CPC分类号： H01L21/845 , H01L27/1211
摘要： The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: a semiconductor layer comprising a plurality of semiconductor sub-layers; and a plurality of fins formed in the semiconductor layer and adjoining the semiconductor layer, wherein at least two of the plurality of fins comprise different numbers of the semiconductor sub-layers and have different heights. According to the present disclosure, a plurality of semiconductor devices with different dimensions and different driving abilities can be integrated on a single wafer.
摘要翻译：本发明提供一种半导体器件及其制造方法。半导体器件包括：包括多个半导体子层的半导体层; 以及形成在所述半导体层中并与所述半导体层相邻的多个鳍，其中所述多个鳍中的至少两个鳍包括不同数量的半导体子层并具有不同的高度。根据本公开，可以在单个晶片上集成具有不同尺寸和不同驱动能力的多个半导体器件。

103. 发明授权

US08367490B2 Semiconductor structure and method for manufacturing the same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US08367490B2
公开(公告)日：2013-02-05
申请号：US13144182
申请日：2011-03-04
申请人： Huilong Zhu , Qingqing Liang , Haizhou Yin , Zhijiong Luo
发明人： Huilong Zhu , Qingqing Liang , Haizhou Yin , Zhijiong Luo
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L21/84 , H01L29/42384 , H01L29/4908 , H01L29/6675 , H01L29/78603 , H01L29/78648 , H01L2924/0002 , H01L2924/00
摘要： The present application discloses a semiconductor structure and a method for manufacturing the same. The semiconductor structure according to the present invention adjusts a threshold voltage with a common contact, which has a portion outside the source or drain region extending to the back-gate region and provides an electrical contact of the source or drain region and the back-gate region, which leads to a simple manufacturing process, an increased integration level and a lowered manufacture cost. Moreover, the asymmetric design of the back-gate structure further increases the threshold voltage and improves the performance of the device.
摘要翻译：本申请公开了一种半导体结构及其制造方法。根据本发明的半导体结构利用公共接触来调节阈值电压，该公共触点具有延伸到背栅极区域的源极或漏极区域之外的部分并且提供源极或漏极区域与背栅极的电接触区域，这导致简单的制造过程，增加的集成水平和降低的制造成本。此外，背栅结构的非对称设计进一步增加了阈值电压并提高了器件的性能。

104. 发明授权

US08361851B2 Method for manufacturing an NMOS with improved carrier mobility 有权
标题翻译：具有改善的载流子迁移率的NMOS的制造方法
公开(公告)号：US08361851B2
公开(公告)日：2013-01-29
申请号：US13063896
申请日：2010-06-21
申请人： Huilong Zhu , Haizhou Yin , Zhijiong Luo
发明人： Huilong Zhu , Haizhou Yin , Zhijiong Luo
IPC分类号： H01L21/338
CPC分类号： H01L29/7845 , H01L21/76897 , H01L29/66545
摘要： Tensile stress is applied to the channel region of an N-type metal oxide semiconductor (NMOS) transistor by directly forming a material having a tensile stress, for example, tungsten, in the contact holes on the source region and drain region of the NMOS. Then, the dummy gate layer in the gate stack of the NMOS transistor is removed, so as to further reduce the counter force of the gate stack on the channel region, thereby increasing the tensile stress in the channel region, enhancing the drift mobility of the carrier, and improving the performance of the transistor. The present invention avoids using a separate stress layer to create tensile stress in the channel region of an NMOS transistor, which advantageously simplifies the transistor manufacturing process and improves sizes and performance of the transistor.
摘要翻译：通过在NMOS的源极区域和漏极区域的接触孔中直接形成具有拉伸应力的材料，例如钨，在N型金属氧化物半导体（NMOS）晶体管的沟道区域上施加拉伸应力。然后，除去NMOS晶体管的栅极堆叠中的虚拟栅极层，以进一步减小栅极堆叠在沟道区域上的反作用力，从而增加沟道区域中的拉伸应力，增强了漏极迁移率载体，并提高晶体管的性能。本发明避免使用单独的应力层在NMOS晶体管的沟道区域中产生拉伸应力，这有利地简化了晶体管制造工艺并改善了晶体管的尺寸和性能。

105. 发明申请

US20130017665A1 METHODS OF FORMING ISOLATION STRUCTURE AND SEMICONDUCTOR STRUCTURE 审中-公开
标题翻译：形成隔离结构和半导体结构的方法
公开(公告)号：US20130017665A1
公开(公告)日：2013-01-17
申请号：US13380807
申请日：2011-08-05
申请人： Haizhou Yin , Huilong Zhu , Zhijiong Luo
发明人： Haizhou Yin , Huilong Zhu , Zhijiong Luo
IPC分类号： H01L21/762
CPC分类号： H01L21/76224
摘要： The present invention relates to a method of forming an isolation structure and a semiconductor structure. The method of forming the isolation structure comprises the steps of: providing a silicon substrate having a (110) crystal plane or a (112) crystal plane and determining the [111] direction of the silicon substrate; forming first trenches in the silicon substrate by wet etching the silicon substrate, the extension direction of the first trenches being substantially perpendicular to the [111] direction; filling the first trenches with a first insulating material to form a first isolator; forming second trenches in the silicon substrate by dry etching the silicon substrate, the extension direction of the second trenches being perpendicular to the extension direction of the first trenches; filling the second trenches with a second insulating material to form a second isolator.
摘要翻译：本发明涉及形成隔离结构和半导体结构的方法。形成隔离结构的方法包括以下步骤：提供具有（110）晶面或（112）晶面并确定硅衬底的[111]方向的硅衬底; 通过湿蚀刻硅衬底在硅衬底中形成第一沟槽，第一沟槽的延伸方向基本上垂直于[111]方向; 用第一绝缘材料填充第一沟槽以形成第一隔离器; 通过干蚀刻硅衬底在硅衬底中形成第二沟槽，第二沟槽的延伸方向垂直于第一沟槽的延伸方向; 用第二绝缘材料填充第二沟槽以形成第二隔离器。

106. 发明授权

US08354343B2 Semiconductor structure and manufacturing method of the same 有权
标题翻译：半导体结构及其制造方法相同
公开(公告)号：US08354343B2
公开(公告)日：2013-01-15
申请号：US12990990
申请日：2010-09-19
申请人： Huilong Zhu , Haizhou Yin , Zhijiong Luo
发明人： Huilong Zhu , Haizhou Yin , Zhijiong Luo
IPC分类号： H01L23/48
CPC分类号： H01L23/522 , H01L21/32051 , H01L21/76823 , H01L21/76838 , H01L21/76873 , H01L21/76886 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor structure and a manufacturing method thereof. The method comprises: providing a semiconductor substrate comprising semiconductor devices; depositing a copper diffusion barrier layer on the semiconductor substrate; forming a copper composite layer on the copper diffusion barrier layer; decomposing the copper composite at corresponding positions, where copper interconnection is to be formed, into copper according to the shape of the copper interconnection; and etching off the undecomposed copper composite and the copper diffusion barrier layer underneath, to interconnect the semiconductor devices. The present invention is adaptive for manufacturing interconnection in integrated circuits.
摘要翻译：本发明提供一种半导体结构及其制造方法。该方法包括：提供包括半导体器件的半导体衬底; 在所述半导体衬底上沉积铜扩散阻挡层; 在铜扩散阻挡层上形成铜复合层; 根据铜互连的形状，将要形成铜互连的相应位置处的铜复合物分解成铜; 并且在下面蚀刻未分解的铜复合物和铜扩散阻挡层，以使半导体器件互连。本发明适用于制造集成电路中的互连。

107. 发明申请

US20130009217A1 Transistor, Method for Manufacturing Transistor, and Semiconductor Chip Comprising the Transistor 有权
标题翻译：晶体管，制造晶体管的方法以及包含晶体管的半导体芯片
公开(公告)号：US20130009217A1
公开(公告)日：2013-01-10
申请号：US13378997
申请日：2011-08-09
申请人： Haizhou Yin , Jun Luo , Huilong Zhu , Zhijiong Luo
发明人： Haizhou Yin , Jun Luo , Huilong Zhu , Zhijiong Luo
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/7833 , H01L21/28518 , H01L21/32139 , H01L21/76897 , H01L29/41775 , H01L29/665 , H01L29/6659
摘要： It is provided a transistor, a method for manufacturing the transistor, and a semiconductor chip comprising the transistor. A method for manufacturing a transistor may comprise: defining an active area on a semiconductor substrate, and forming on the active area a gate stack, a primary spacer, and source/drain regions, wherein the primary spacer surrounds the gate stack, and the source/drain regions are embedded in the active area and self-aligned with opposite sides of the primary spacer; forming a semiconductor spacer surrounding the primary spacer, and cutting off the ends of the semiconductor spacer in the width direction of the gate stack so as to isolate the source/drain regions from each other; and covering the surfaces of the source/drain regions and the semiconductor spacer with a layer of metal or alloy, and annealing the resulting structure, so that a metal silicide is formed on the surfaces of the source/drain regions, and so that the semiconductor spacer is transformed into a silicide spacer simultaneously. As such, the risk of transistor failure due to atoms or ions of Ni entering the channel region through the source/drain extension regions is reduced.
摘要翻译：提供晶体管，晶体管的制造方法和包括晶体管的半导体芯片。一种用于制造晶体管的方法可以包括：在半导体衬底上限定有源区，以及在有源区上形成栅极堆叠，初级间隔物和源极/漏极区，其中主要间隔物包围栅极堆叠，源极 /漏极区域嵌入有源区域并与主间隔物的相对侧自对准; 形成围绕所述初级间隔物的半导体衬垫，并且在所述栅极叠层的宽度方向上切断所述半导体衬垫的端部，以将所述源极/漏极区彼此隔离; 并且用金属或合金层覆盖源极/漏极区域和半导体衬垫的表面，并对所得结构进行退火，使得在源极/漏极区域的表面上形成金属硅化物，并且使得半导体间隔物同时转化成硅化物间隔物。因此，由于通过源极/漏极延伸区域进入沟道区域的Ni的原子或离子导致的晶体管故障的风险降低。

108. 发明申请

US20120319213A1 Semiconductor structure and method for manufacturing the same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20120319213A1
公开(公告)日：2012-12-20
申请号：US13380486
申请日：2011-04-18
申请人： Haizhou Yin , Wei Jiang , Zhijiong Luo , Huilong Zhu
发明人： Haizhou Yin , Wei Jiang , Zhijiong Luo , Huilong Zhu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/41775 , H01L29/456 , H01L29/6653 , H01L29/66545 , H01L29/6656
摘要： The present invention provides a method for manufacturing a semiconductor structure, comprising: forming a first contact layer on an exposed active region of a first spacer; forming a second spacer at a region of the first contact layer close to a gate stack to partially cover the exposed active region; forming a second contact layer in the uncovered exposed active region, wherein when a diffusion coefficient of the first contact layer is the same as that of the second contact layer, the first contact layer has a thickness less than that of the second contact layer; and when the diffusion coefficient of the first contact layer is different from that of the second contact layer, the diffusion coefficient of the first contact layer is smaller than that of the second contact layer. Correspondingly, the present invention also provides a semiconductor structure. The present invention is beneficial to the suppression of the diffusion of corresponding compositions from the contact layers into the channel region, reduction of the short channel effects, and improvement of the reliability of the semiconductor structure.
摘要翻译：本发明提供一种制造半导体结构的方法，包括：在第一间隔物的暴露的有源区上形成第一接触层; 在所述第一接触层的靠近栅极堆叠的区域处形成第二间隔物以部分地覆盖所述暴露的有源区; 在未覆盖的暴露的有源区中形成第二接触层，其中当第一接触层的扩散系数与第二接触层的扩散系数相同时，第一接触层的厚度小于第二接触层的厚度; 并且当第一接触层的扩散系数与第二接触层的扩散系数不同时，第一接触层的扩散系数小于第二接触层的扩散系数。相应地，本发明还提供一种半导体结构。本发明有利于抑制相应组合物从接触层扩散到沟道区中，减少短沟道效应，提高半导体结构的可靠性。

109. 发明申请

US20120273901A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120273901A1
公开(公告)日：2012-11-01
申请号：US13063733
申请日：2010-09-27
申请人： Haizhou Yin , Huicai Zhong , Huilong Zhu , Zhijiong Luo
发明人： Haizhou Yin , Huicai Zhong , Huilong Zhu , Zhijiong Luo
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66545 , H01L29/49 , H01L29/66583 , H01L29/7833
摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. According to the present invention, when a gate is formed via a replacement gate process, a portion of a work function metal layer and a portion of a first metal layer are removed after the work function metal layer and the first metal layer are formed, and then the removed portions are replaced with a second metal layer. A device having such a gate structure greatly reduces the resistivity of the whole gate, due to a portion of the work function metal layer with a high resistivity being removed and the removed portion being filled with the second metal layer with a low resistivity, thereby AC performances of the device are improved.
摘要翻译：半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。根据本发明，当通过替换栅极工艺形成栅极时，在形成功函数金属层和第一金属层之后，去除功函数金属层的一部分和第一金属层的一部分，以及然后用第二金属层代替去除的部分。具有这种栅极结构的器件大大降低了整个栅极的电阻率，这是由于去除具有高电阻率的功函数金属层的一部分并且被去除的部分被低电阻率的第二金属层填充，由此AC 改善了设备的性能。

110. 发明申请

US20120261674A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US20120261674A1
公开(公告)日：2012-10-18
申请号：US13378253
申请日：2011-03-02
申请人： Zhijiong Luo , Haizhou Yin , Huilong Zhu
发明人： Zhijiong Luo , Haizhou Yin , Huilong Zhu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66636 , H01L29/1083 , H01L29/6656 , H01L29/78
摘要： The present invention provides a semiconductor device, which is formed on a semiconductor substrate, comprising a gate stack, a channel region, and source/drain regions, wherein the gate stack is on the channel region, the channel region is in the semiconductor substrate, the source/drain regions are embedded in the semiconductor substrate, and each of the source/drain regions comprises a sidewall and a bottom, a second semiconductor layer being sandwiched between the channel region and a portion of the sidewall distant from the bottom, a first semiconductor layer being sandwiched between the semiconductor substrate and at least a portion of the bottom distant from the sidewall, and an insulating layer being sandwiched between the semiconductor substrate and the other portions of the bottom and/or the other portions of the sidewall. The present invention also provides a method for forming the semiconductor device. The present invention helps preventing the dopants in the source/drain regions from diffusing into the substrate.
摘要翻译：本发明提供一种半导体器件，其形成在半导体衬底上，包括栅极堆叠，沟道区和源极/漏极区，其中栅极堆叠在沟道区上，沟道区位于半导体衬底中，源极/漏极区域被嵌入在半导体衬底中，并且每个源极/漏极区域包括侧壁和底部，第二半导体层夹在沟道区域和远离底部的侧壁的一部分之间，第一半导体层被夹在半导体衬底和远离侧壁的底部的至少一部分之间，绝缘层夹在半导体衬底和侧壁的底部和/或其它部分的其它部分之间。本发明还提供了一种用于形成半导体器件的方法。本发明有助于防止源/漏区中的掺杂剂扩散到衬底中。

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