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101. 发明专利

JPH0828462B2 失效
公开(公告)号：JPH0828462B2
公开(公告)日：1996-03-21
申请号：JP23220187
申请日：1987-09-18
申请人： HITACHI LTD
发明人： KAWAI SUEO , NISHIMURA ASAO , KITANO MAKOTO , MIURA HIDEO , YAGUCHI AKIHIRO
IPC分类号： H01L23/50 , H01L23/28 , H01L29/06

102. 发明专利

JPH07170086A MOUNTING STRUCTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07170086A
公开(公告)日：1995-07-04
申请号：JP27201094
申请日：1994-11-07
申请人： HITACHI LTD
发明人： KITANO MAKOTO , NISHIMURA ASAO , YAGUCHI AKIHIRO , YONEDA NAE , KONO RYUJI , KAWAI SUEO , MURAKAMI HAJIME , SHIMIZU KAZUO
IPC分类号： H05K7/20
摘要： PURPOSE:To obtain the mounting structure which increases a heat-dissipating effect and which can achieve a high-density mounting operation by a method wherein a plurality of resin-sealed semiconductor devices provided respectively with a plurality of fins are mounted respectively on two boards and the mounting boards are counterposed in such a way that the fins on the individual boards are counteropsed face each other. CONSTITUTION:An element 4 which is mounted on a metal plate 16 and a lead 3 are connected electrically by a wire 15, they are resin-sealed, and a package body is formed. In the figure, a package by this invention is compared with a conventional package in such a way that the upper figure shows the conventional package and that the lower figure shows the package by this invention. In general, when a plurality of semiconductor devices are mounted in wide spaces in which fins have been installed, the air flows so as to avoid the parts between the fins, and a heat-dissipating effect cannot be enhanced. However, when the plurality of semiconductor devices are mounted so as to reduce a distance between tip parts of the fins in opposite packages, the passage resistance of the air in the parts is increased, the air flows easily also between the fins, and the heat-dissipating effect is enhanced. Consequently, the heat-dissipating effect is increased, and the high-density mounting operation os the semiconductor devices can be achieved.

103. 发明专利

JPH07147374A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07147374A
公开(公告)日：1995-06-06
申请号：JP29537993
申请日：1993-11-25
申请人： HITACHI LTD
发明人： KONO RYUJI , NISHIMURA ASAO , YAGUCHI AKIHIRO , TANAKA TADAYOSHI
IPC分类号： H01L23/28 , H01L21/52 , H01L23/50
摘要： PURPOSE:To prevent the occurrence of reflow cracks which are generated by a new mechanism by mechanically restricting the relative displacement of corner sections of a resin against other members and reducing the deformation of the resin in a crack developing direction. CONSTITUTION:Hook leads 15 are protruding from the central parts of side faces of a tab 11 for mounting a semiconductor element 2 with a die bonding agent layer 4 in between and the leads 15 are bent toward the circuit forming surface of the element 2 so that the leads 15 can prevent the occurrence of reflow cracks by mechanically restricting the relative displacement of corners of a sealing resin 5 against other members even when the layer 4 is stripped off at a high temperature during the reflowing process. Therefore, the deformation of the resin 4 in a crack developing direction can be reduced and the occurrence of reflow cracks generated by a new mechanism can be prevented.

104. 发明专利

JPH06125033A RESIN SEALED TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06125033A
公开(公告)日：1994-05-06
申请号：JP27263192
申请日：1992-10-12
申请人： HITACHI LTD
发明人： TANAKA TADAYOSHI , NISHIMURA ASAO , YAGUCHI AKIHIRO , KONO RYUJI
IPC分类号： H01L21/52 , H01L23/50
摘要： PURPOSE:To provide a thin semiconductor device which has excellent resistance against the reflow of solder. CONSTITUTION:Slopes are formed on inner edges of a frame tub 2 supporting a semiconductor element 1 that has corresponding slant sides on which it is bonded to the tub 2 with a bonding agent 6. Since side faces of the element 1 are supported on the slopes of the tub 2, the element 1 can be easily mounted on the tub 2 in a highly stable state. Therefore, the problem encountered when the element is mounted by the conventional technique can be solved.

105. 发明专利

JPH05315526A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05315526A
公开(公告)日：1993-11-26
申请号：JP11577692
申请日：1992-05-08
申请人： HITACHI LTD
发明人： KONO RYUJI , NISHIMURA ASAO , YAGUCHI AKIHIRO
IPC分类号： H01L21/52 , H01L21/60 , H01L23/28 , H01L23/50
摘要： PURPOSE:To enable the title semiconductor device to be made thinner by a method wherein the non-circuit formation surface of a semiconductor element and the rear surface of a tab are constituted to be flush with the surface of the title semiconductor device. CONSTITUTION:A bonding agent 2 is applied to the surface of a tab 3 so that a semiconductor element 1 may be bonded onto the tab 3 making the circuit formation surface on the element 1 oppose to the tab 3. At this time, the size of the tab 3 and the bonding agent 2 is made slightly shorter than that of the part wherein electrode pad Ip group is constituted so that the semiconductor element 1 when it is bonded to the bonding agent 2 may not interfere with the electrode pad Ip. After creating such a state, the electrode pad Ip and a lead 4 are connected to each other by a wire 5 to be seal-formed so that the non-circuit formation surface of the semiconductor element 1 and the surface of the tab 3 may be exposed to the surface of the title semiconductor. Accordingly, this semiconductor device can be made thinner by the thickness of sealing resin on both surfaces.

106. 发明专利

JPH0468780B2 失效
公开(公告)号：JPH0468780B2
公开(公告)日：1992-11-04
申请号：JP15547587
申请日：1987-06-24
申请人： HITACHI LTD
发明人： MIURA HIDEO , NISHIMURA ASAO , KITANO MAKOTO , YAGUCHI AKIHIRO , KAWAI SUEO
IPC分类号： H01L23/50 , H01L23/28

107. 发明专利

JPH03227541A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03227541A
公开(公告)日：1991-10-08
申请号：JP2345790
申请日：1990-02-01
申请人： HITACHI LTD
发明人： KONO RYUJI , KITANO MAKOTO , NISHIMURA ASAO , YAGUCHI AKIHIRO , KAWAI SUEO
IPC分类号： H01L21/60 , H01L23/495
摘要： PURPOSE:To set the terminal disposition of leads irrespective of electrode pad disposition of an element by connecting the pads of the element in a conductive pattern capable of forming in an arbitrary shape, and connecting the leads to the nearest position to the lead or an optimum position of a conductive pattern. CONSTITUTION:A through hole 2A is formed at a position corresponding to the electrode pad 1P of a semiconductor element 1 of a tab 2, a conductive pattern 4 is provided on an insulating coating 3 formed on the tab 2, and the element 1 is placed on the surface of the opposite side to the surface formed with the pattern 4 of the tab 2 by opposing the pad 1P to the hole 2A. The pad 1P of the element 1 is electrically connected to the pattern 4 by a first conductive member (solder) 4H provided in the hole 2A, and the pattern 4 is electrically connected to a lead 6 by a second conductive member (wire) 5. Thus, the terminal disposition of an outer lead can be set irrespective of the pad of the element.

108. 发明专利

JPH01204460A LEAD FRAME FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01204460A
公开(公告)日：1989-08-17
申请号：JP2751688
申请日：1988-02-10
申请人： HITACHI LTD
发明人： KAWAI SUEO , NISHIMURA ASAO , KITANO MAKOTO , MIURA HIDEO , YAGUCHI AKIHIRO , YASUHARA TOSHIHIRO , MURAKAMI HAJIME
IPC分类号： H01L23/28 , H01L23/50
摘要： PURPOSE:To improve moisture resistance by providing recesses at parts of long and short sides of a tab, and leading out tab hanging leads from the recesses. CONSTITUTION:A recess 7 is formed on the short side of a tab 2, and a tab hanging lead 3 is extended from the recess 7. Further, the corners of the tab 2 are deleted, a recess 7 is formed at the deleted side, and the lead 3 is extended from the recess 7. Since the length of the deleted part 8 can be considerably freely selected, the necessary length of the lead 3 can be easily obtained. Accordingly, the lead 3 can be lengthened, and a moisture invasion passage can be also lengthened. Thus, its moisture resistance can be improved.

109. 发明专利

JPH01132149A RESIN-SEALED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01132149A
公开(公告)日：1989-05-24
申请号：JP28936087
申请日：1987-11-18
申请人： HITACHI LTD
发明人： NISHIMURA ASAO , KAWAI SUEO , KITANO MAKOTO , MIURA HIDEO , YAGUCHI AKIHIRO
IPC分类号： H01L21/52 , H01L23/28 , H01L23/50
摘要： PURPOSE:To prevent a crack of a sealing resin from being caused during a soldering and mounting operation in a resin-sealed semiconductor device which is structured to mount a semiconductor element on a lead via an insulating film by a method wherein a through hole is made in the thickness direction of the insulating film. CONSTITUTION:A semiconductor device is mounted on a lead frame; its circumference is molded by using a sealing resin 7; an electricalconnecting operation inside and outside the sealing resin 7 is executed via two or more leads 3. In a resin-sealed semiconductor device of this structure, one part of the leads 3 is arranged directly under a semiconductor element 1; the semiconductor element 1 is mounted on the leads via an insulating film 11 where one or more through holes 14 have been made in the thickness direction. By this setup, even when steam is generated between the semiconductor element 1 and the insulating film 11, the steam reaches the lead 3 by way of the through hole 14 made in the insulating film 11 and is discharged to the outside from a microscopic gap at an interface between the lead 3 and the sealing resin 7; accordingly, it is possible to prevent a crack of the sealing resin 7 from being caused during a soldering and mounting operation.

110. 发明专利

JPS641266A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS641266A
公开(公告)日：1989-01-05
申请号：JP15547587
申请日：1987-06-24
申请人： HITACHI LTD
发明人： MIURA HIDEO , NISHIMURA ASAO , KITANO MAKOTO , YAGUCHI AKIHIRO , KAWAI SUEO
IPC分类号： H01L23/50 , H01L23/28
摘要： PURPOSE:To prevent a semiconductor device from damaging at a high temperature and to improve the reliability of the device by continuously providing a noble metal film to be formed on a lead frame in the device from a frame for placing a semiconductor element to a section arriving at the surface of the device of a lead for supporting the frame. CONSTITUTION:A gold plating film 5 is formed on a tab 4 and tap hanging leads 3 provided at both ends of the tab. Since the film 5 has a low bondability to seaing resin 1, a bonding boundary is simply exfoliated. Steam generated in a semiconductor device when the device is exposed at high temperature tends to generate large vapor pressure in the device, but a boundary between the film 5 provided on the lead 3 and the resin 5 is exfoliated at the stage of small pressure. Accordingly, the steam can be escaped externally of the device through the boundary. On the other hand, the resin 1 is contracted near at room temperature or lower than it to affect its compression force to a lead frame in close contact therewith. Accordingly, it can prevent moisture from entering from an exterior to eliminate the loss of moisture resistance reliability of the device in a normal using state.

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