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101. 发明授权

US07817458B2 Hybrid circuit having nanotube memory cells 有权
标题翻译：具有纳米管存储单元的混合电路
公开(公告)号：US07817458B2
公开(公告)日：2010-10-19
申请号：US12030470
申请日：2008-02-13
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： G11C11/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/77 , G11C2213/81 , Y10S977/724 , Y10S977/734 , Y10S977/742 , Y10S977/942 , Y10S977/943
摘要： A hybrid memory system having electromechanical memory cells is discussed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.
摘要翻译：讨论了具有机电存储器单元的混合存储器系统。存储单元核心电路具有机电存储器单元的阵列，其中每个单元是横截面结，其中至少一个元件是纳米管或纳米管带。访问电路向存储器单元核心电路提供阵列地址以选择至少一个对应的单元。存取电路由半导体电路元件构成。

102. 发明授权

US07786540B2 Sensor platform using a non-horizontally oriented nanotube element 有权
标题翻译：传感器平台使用非水平取向的纳米管元件
公开(公告)号：US07786540B2
公开(公告)日：2010-08-31
申请号：US11827393
申请日：2007-07-11
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L23/00
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.
摘要翻译：介绍传感器平台及其制作方法。描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。在某些实施例中，这种传感器元件包括一个或多个原始纳米管。在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。在某些实施方案中，传感器元件包括预衍生化或预官能化的纳米管。在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

103. 发明授权

US07782652B2 Volatile nanotube-based switching elements with multiple controls 有权
标题翻译：基于挥发性纳米管的开关元件与多个控制
公开(公告)号：US07782652B2
公开(公告)日：2010-08-24
申请号：US12246009
申请日：2008-10-06
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： G11C11/00
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior.
摘要翻译：基于纳米管的开关元件具有由此制成的多个控制和电路。开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

104. 发明授权

US07777222B2 Nanotube device structure and methods of fabrication 有权
标题翻译：纳米管器件结构及其制造方法
公开(公告)号：US07777222B2
公开(公告)日：2010-08-17
申请号：US12548131
申请日：2009-08-26
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L35/24 , H01L51/00 , H01L41/00 , H03H9/00
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/725 , Y10S977/733 , Y10S977/755 , Y10S977/938 , Y10T29/49105
摘要： Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article having at least one nanotube, the article having first and second ends; positioning the conductive article between said first and second structures such that the first structure clamps the first and second ends of the article to the second structure, and such that the first and second output electrodes are opposite each other with the article positioned therebetween; providing at least one signal electrode in electrical communication with the conductive article; and providing at least one control electrode in spaced relation to the conductive article such that the control electrode may control the conductive article to form a conductive pathway between the signal electrode and the first output electrode.
摘要翻译：纳米管器件结构和制造方法。制造纳米管开关元件的方法包括：形成具有第一输出电极的第一结构; 形成具有第二输出电极的第二结构; 形成具有至少一个纳米管的导电制品，所述制品具有第一和第二端; 将导电制品定位在所述第一和第二结构之间，使得第一结构将制品的第一和第二端夹持到第二结构，并且使得第一和第二输出电极彼此相对，物品位于它们之间; 提供至少一个与所述导电制品电连通的信号电极; 以及提供与所述导电制品间隔开的至少一个控制电极，使得所述控制电极可以控制所述导电制品以在所述信号电极和所述第一输出电极之间形成导电路径。

105. 发明授权

US07709880B2 Field effect devices having a gate controlled via a nanotube switching element 有权
标题翻译：具有通过纳米管开关元件控制的栅极的场效应器件
公开(公告)号：US07709880B2
公开(公告)日：2010-05-04
申请号：US11742290
申请日：2007-04-30
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/78
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/54 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01L27/115 , H01L29/78 , H01L51/0048 , Y10S977/732 , Y10S977/733 , Y10S977/936
摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译：具有通过纳米管开关元件控制的栅极的场效应器件。在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。第二半导体类型的材料的沟道区域设置在源区和漏区之间。栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

106. 发明申请

US20100005645A1 RANDOM ACCESS MEMORY INCLUDING NANOTUBE SWITCHING ELEMENTS 有权
标题翻译：随机存取存储器，包括纳米管开关元件
公开(公告)号：US20100005645A1
公开(公告)日：2010-01-14
申请号：US12550975
申请日：2009-08-31
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01S4/00
CPC分类号： G11C11/412 , B82Y10/00 , G11C13/025 , G11C14/00 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0665 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/936 , Y10S977/938 , Y10S977/943 , Y10T29/49002
摘要： Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes conductive terminals, a nanotube article and control circuitry capable of controllably form and unform an electrically conductive channel between the conductive terminals. The electronic memory is a volatile storage device capable of storing a logic state in response to electrical stimulus. In certain embodiment the electronic memory has cross-coupled first and second inverters in electrical communication with the first and second nanotube switching elements. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.
摘要翻译：随机存取存储器包括纳米管开关元件。存储单元包括第一和第二纳米管切换元件和电子存储器。每个纳米管切换元件包括导电端子，纳米管制品和能够可控地形成和取消导电端子之间的导电通道的控制电路。电子存储器是能够响应于电刺激而存储逻辑状态的易失性存储装置。在某些实施例中，电子存储器具有与第一和第二纳米管切换元件电连通的交叉耦合的第一和第二反相器。电池可以作为普通电子存储器工作，或者可以在阴影存储器或存储模式（例如，当电力中断时）操作以将电子存储器状态传送到纳米管开关元件。该装置可以稍后在调谐模式下操作，其中纳米管切换元件的状态可以被传送到电子存储器。

107. 发明授权

US07542334B2 Bistable latch circuit implemented with nanotube-based switching elements 有权
标题翻译：双稳态锁存电路采用基于纳米管的开关元件实现
公开(公告)号：US07542334B2
公开(公告)日：2009-06-02
申请号：US11971476
申请日：2008-01-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： G11C11/41
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： A nanotube-based switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior.
摘要翻译：一种基于纳米管的开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

108. 发明授权

US07541842B2 Nanotube-based switching elements and logic circuits 有权
标题翻译：基于纳米管的开关元件和逻辑电路
公开(公告)号：US07541842B2
公开(公告)日：2009-06-02
申请号：US11602795
申请日：2006-11-21
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H03K19/20
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/762 , Y10S977/932 , Y10S977/94 , Y10T29/49002
摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.
摘要翻译：基于纳米管的开关元件和逻辑电路。在本发明的一个实施例中，开关元件包括输入节点，输出节点，具有至少一个导电纳米管的纳米管通道元件和控制电极。控制电极相对于纳米管通道元件设置，以在输入节点和输出节点之间可控制地形成导电通道。通道至少包括所述纳米管通道元件。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。在本发明的另一实施例中，控制电极相对于纳米管通道元件布置，以通过引起所述纳米管通道元件的机电偏转而形成所述导电通道。在本发明的另一个实施例中，输出节点包括相对于纳米管通道元件设置的隔离结构，使得通道形成从输出节点的状态基本上是不变的。在本发明的另一个实施例中，隔离结构包括设置在纳米管通道元件的相对侧上的电极，所述电极产生基本上相同的电场。在本发明的另一个实施例中，布尔逻辑电路包括至少一个输入端子和输出端子，以及电气地布置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。布尔函数变换包括函数内的布尔反转，如NOT或NOR函数。

109. 发明授权

US07538040B2 Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers 有权
标题翻译：碳纳米管从光掩模到晶圆的精密图案转移的技术
公开(公告)号：US07538040B2
公开(公告)日：2009-05-26
申请号：US11298274
申请日：2005-12-08
申请人： Shiqun Gu , Peter G. McGrath , James Elmer , Richard J. Carter , Thomas Rueckes
发明人： Shiqun Gu , Peter G. McGrath , James Elmer , Richard J. Carter , Thomas Rueckes
IPC分类号： H01L21/461
CPC分类号： H01L21/76838 , B82Y10/00 , H01L21/32136 , H01L21/32139 , H01L51/0018 , H01L51/0048 , Y10S977/742
摘要： A method for patterning CNTs on a wafer wherein a CNT layer is provided on a substrate, a hard mask film is deposited on the CNT layer, a BARC layer (optional) is coated on the hard mask film, and a resist is patterned on the BARC layer (or directly on the hard mask film if the BARC layer is not included). Then, the resist pattern is effectively transferred to the hard mask film by etching the BARC layer (if provided) and etching partly into, but not entirely through, the hard mask film (i.e., etching is stopped before reaching the CNT layer) Then, the resist and the BARC layer (if provided) is stripped, and the hard mask pattern is effectively transferred to the CNTs by etching away (preferably by using Cl, F plasma) the portions of the hard mask which have been already partially etched away.
摘要翻译：一种用于在晶片上图案化CNT的方法，其中CNT层设置在基板上，硬掩模膜沉积在CNT层上，BARC层（可选）涂覆在硬掩模膜上，并且抗蚀剂在 BARC层（或直接在硬掩模膜上，如果不包括BARC层）。然后，通过蚀刻BARC层（如果提供）并且部分地蚀刻到硬掩模膜上而不是完全通过硬掩模膜（即，在到达CNT层之前停止蚀刻），将抗蚀剂图案有效地转移到硬掩模膜。然后，剥离抗蚀剂和BARC层（如果提供），并且通过蚀刻掉（优选通过使用Cl，F等离子体）已经部分蚀刻掉的硬掩模的部分，将硬掩模图案有效地转移到CNT。

110. 发明授权

US07511318B2 Electromechanical memory array using nanotube ribbons and method for making same 有权
标题翻译：使用纳米管带的机电存储器阵列及其制造方法
公开(公告)号：US07511318B2
公开(公告)日：2009-03-31
申请号：US11942056
申请日：2007-11-19
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： H01L29/00 , H01L29/84
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.
摘要翻译：公开了诸如存储单元的机电电路及其制造方法。这些电路包括具有导电迹线和从衬底表面延伸的支撑体的结构，以及由支撑体悬挂的穿过导电迹线的纳米管带，其中每个带包括一个或多个纳米管。电 - 机械电路元件通过提供具有导电迹线和支撑件的结构来制造，其中支撑件从基板的表面延伸。在载体上提供一层纳米管，并且选择性地去除纳米管层的部分以形成穿过导电迹线的纳米管带。每个带包括一个或多个纳米管。

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