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101. 发明申请

US20100133689A1 COPPER (I) COMPOUNDS USEFUL AS DEPOSITION PRECURSORS OF COPPER THIN FILMS 审中-公开
标题翻译： COPPER（I）化合物作为铜薄膜沉积前体有用
公开(公告)号：US20100133689A1
公开(公告)日：2010-06-03
申请号：US12464088
申请日：2009-05-11
申请人： Chongying Xu , Alexander Borovik , Thomas H. Baum
发明人： Chongying Xu , Alexander Borovik , Thomas H. Baum
IPC分类号： H01L23/52 , H01L21/768 , B05D5/12
CPC分类号： C07C257/14 , C07F1/005 , C23C16/18
摘要： Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.
摘要翻译：用于在制造半导体器件中形成铜薄膜的铜（I）脒前体，以及使用化学气相沉积或原子层沉积工艺在基片上沉积铜（I）脒前体的方法。

102. 发明申请

US20090004858A1 TANTALUM AMIDE COMPLEXES FOR DEPOSITING TANTALUM-CONTAINING FILMS, AND METHOD OF MAKING SAME 失效
标题翻译：用于沉淀包含膜的薄膜复合物及其制备方法
公开(公告)号：US20090004858A1
公开(公告)日：2009-01-01
申请号：US12119463
申请日：2008-05-12
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum
IPC分类号： H01L21/44 , C07F9/00
CPC分类号： C23C16/45553 , C07F9/005 , C23C16/18 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45525 , H01L21/28556 , Y10T29/49117
摘要： Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.
摘要翻译：钽前体可用于通过诸如化学气相沉积和原子层沉积的方法在衬底上沉积氮化钽或钽氧化物材料。这些前体可用于在具有铜金属化和/或铁电薄膜的微电子器件结构上形成钽基扩散阻挡层。

103. 发明申请

US20080233276A1 COPPER (I) COMPOUNDS USEFUL AS DEPOSITION PRECURSORS OF COPPER THIN FILMS 有权
标题翻译： COPPER（I）化合物作为铜薄膜沉积前体有用
公开(公告)号：US20080233276A1
公开(公告)日：2008-09-25
申请号：US12119362
申请日：2008-05-12
申请人： Chongying Xu , Alexander Borovik , Thomas H. Baum
发明人： Chongying Xu , Alexander Borovik , Thomas H. Baum
IPC分类号： C23C16/06 , C09D5/00
CPC分类号： C07C257/14 , C07F1/005 , C23C16/18
摘要： Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.
摘要翻译：用于在制造半导体器件中形成铜薄膜的铜（I）脒前体，以及使用化学气相沉积或原子层沉积工艺在基片上沉积铜（I）脒前体的方法。

104. 发明授权

US07294528B2 Supercritical fluid-assisted deposition of materials on semiconductor substrates 有权
标题翻译：材料在半导体衬底上的超临界流体辅助沉积
公开(公告)号：US07294528B2
公开(公告)日：2007-11-13
申请号：US11078211
申请日：2005-03-11
申请人： Chongying Xu , Thomas H. Baum
发明人： Chongying Xu , Thomas H. Baum
IPC分类号： H01L51/40
CPC分类号： C23C18/1204 , C23C18/122 , C23C18/125 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/288 , H01L21/3122 , H01L21/31695 , H01L21/76841 , H01L21/76877
摘要： Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.
摘要翻译：材料在衬底上的超临界流体辅助沉积，例如用于集成电路器件制造的半导体衬底。使用含有待沉积在基材表面上的材料的前体的超临界流体基组合物进行沉积。这种方法允许使用否则将完全不适合于沉积应用的前体，因为对于气相沉积工艺缺乏必要的挥发性和传输特性。

105. 发明授权

US07011716B2 Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products 失效
公开(公告)号：US07011716B2
公开(公告)日：2006-03-14
申请号：US10249658
申请日：2003-04-29
申请人： Chongying Xu , Michael Korzenski , Thomas H. Baum , Alexander Borovik , Eliodor G. Ghenciu
发明人： Chongying Xu , Michael Korzenski , Thomas H. Baum , Alexander Borovik , Eliodor G. Ghenciu
IPC分类号： B08B3/08 , H01L21/302 , B23G1/34
CPC分类号： H01L21/02101
摘要： Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

106. 发明授权

US06735978B1 Treatment of supercritical fluid utilized in semiconductor manufacturing applications 失效
标题翻译：半导体制造应用中超临界流体的处理
公开(公告)号：US06735978B1
公开(公告)日：2004-05-18
申请号：US10364558
申请日：2003-02-11
申请人： Glenn M. Tom , Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
发明人： Glenn M. Tom , Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
IPC分类号： F25D100
CPC分类号： C01B32/50 , Y02P20/544
摘要： A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the process facility containing at least one component that is extraneous with respect to the further disposition of the supercritical fluid composition. The withdrawn supercritical fluid composition is converted to a pressurized liquid, which is treated to at least partially remove the extraneous component(s) therefrom. The extraneous component(s)-depleted pressurized liquid in its further disposition can be reconverted to a supercritical state for recycle to the SCF-using process facility, or it can be gasified and discharged to the atmosphere in the case of supercritical fluids such as CO2.
摘要翻译：一种用于利用和处置超临界流体组合物的系统和方法，其中超临界流体（SCF）组合物在诸如半导体制造厂的SCF使用过程设备中使用。超临界流体组合物从处理设备中取出，其中含有至少一种相对于超临界流体组合物的进一步处置是无关的组分。将取出的超临界流体组合物转化为加压液体，其被处理以至少部分地从其中除去外来成分。在其进一步的处置中，去除加压液体的外来成分可以再转化为超临界状态，以再循环至使用SCF的工艺设备，或者在超临界流体如CO2的情况下，可将其气化并排放到大气中。

107. 发明授权

US06417369B1 Pyrazolate copper complexes, and MOCVD of copper using same 失效
标题翻译：吡唑铜络合物和铜的MOCVD使用相同
公开(公告)号：US06417369B1
公开(公告)日：2002-07-09
申请号：US09524063
申请日：2000-03-13
申请人： Chongying Xu , Thomas H. Baum , Ziyun Wang
发明人： Chongying Xu , Thomas H. Baum , Ziyun Wang
IPC分类号： C07F108
CPC分类号： C23C16/18 , C07F1/08 , C07F7/0803
摘要： Copper pyrazolate precursor compositions useful for the formation of copper in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head and for circuitization of packaging components. The copper pyrazolate precursor compositions include fluorinated and non-fluorinated pyrazolate copper (I) complexes and their Lewis base adducts. Such precursors are usefully employed for liquid delivery chemical vapor deposition of copper or copper-containing material on a substrate.
摘要翻译：用于在半导体集成电路中形成铜的吡唑类前体组合物，例如半导体器件结构中的互连金属化，作为用于电镀的粘合种子层，用于沉积薄膜记录头并用于封装部件的电路化。吡唑铜前体组合物包括氟化和非氟化的吡唑盐铜（I）络合物及其路易斯碱加合物。这种前体有利地用于在基底上的铜或含铜材料的液体输送化学气相沉积。

108. 发明授权

US06340769B1 Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor 有权
标题翻译：铱基材料和基体上的结构的制备方法及其铱源试剂
公开(公告)号：US06340769B1
公开(公告)日：2002-01-22
申请号：US09453995
申请日：1999-12-03
申请人： Thomas H. Baum , Chongying Xu
发明人： Thomas H. Baum , Chongying Xu
IPC分类号： C07F1500
CPC分类号： H01L28/65 , C07F15/004 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , C30B29/02 , C30B29/16 , H01L21/02071 , H01L21/32136 , H01L28/55 , Y10S438/906
摘要： A method of forming an iridium-containing film on a substrate, from an iridium-containing precursor thereof which is decomposable to deposit iridium on the substrate, by decomposing the precursor and depositing iridium on the substrate in an oxidizing ambient environment which may for example contain an oxidizing gas such as oxygen, ozone, air, and nitrogen oxide. Useful precursors include Lewis base stabilized Ir(I) &bgr;-diketonates and Lewis base stabilized Ir(I) &bgr;-ketoiminates. The iridium deposited on the substrate may then be etched for patterning an electrode, followed by depositing on the electrode a dielectric or ferroelectric material, for fabrication of thin film capacitor semiconductor devices such as DRAMs, FRAMs, hybrid systems, smart cards and communication systems.
摘要翻译：一种在含有铱的膜的基底上形成含铱膜的方法，该方法是通过分解前体并在氧化环境中将铱沉积在氧化环境环境中的方法，其可分解成在基底上沉积铱氧气，臭氧，空气和氮氧化物等氧化气体。有用的前体包括路易斯碱稳定的Ir（I）β-二酮酸酯和路易斯碱稳定的Ir（I）β-酮缩酮。然后可以蚀刻沉积在衬底上的铱以图案化电极，随后在电极上沉积电介质或铁电材料，用于制造诸如DRAM，FRAM，混合系统，智能卡和通信系统的薄膜电容器半导体器件。

109. 发明授权

US07531679B2 Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride 有权
标题翻译：含硅膜如包括氮化硅，二氧化硅和/或硅氧氮化物的薄膜的低温沉积的组成和方法
公开(公告)号：US07531679B2
公开(公告)日：2009-05-12
申请号：US10294431
申请日：2002-11-14
申请人： Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan Hendrix , Jeffrey Roeder
发明人： Ziyun Wang , Chongying Xu , Ravi K. Laxman , Thomas H. Baum , Bryan Hendrix , Jeffrey Roeder
IPC分类号： C07F7/10 , C23C14/10
CPC分类号： H01L21/0217 , C07F7/025 , C07F7/10 , C07F7/12 , C23C16/308 , C23C16/345 , C23C16/402 , C30B25/02 , C30B29/06 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/0228 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,
摘要翻译：半导体器件如低介电常数（k）薄膜，高k栅极硅酸盐，低温硅外延膜和含有氮化硅（Si 3 N 4），硅氧氮化物（SiO x N y）的膜的制造中的含硅膜的硅前体，和/或二氧化硅（SiO 2）。本发明的前体适于在低温（例如，<500℃）的化学气相沉积工艺中使用，用于制造ULSI器件和器件结构。

110. 发明授权

US07531031B2 Copper (I) compounds useful as deposition precursors of copper thin films 有权
标题翻译：可用作铜薄膜沉积前体的铜（I）化合物
公开(公告)号：US07531031B2
公开(公告)日：2009-05-12
申请号：US12119362
申请日：2008-05-12
申请人： Chongying Xu , Alexander S. Borovik , Thomas H. Baum
发明人： Chongying Xu , Alexander S. Borovik , Thomas H. Baum
IPC分类号： C23C16/00 , C07F1/08
CPC分类号： C07C257/14 , C07F1/005 , C23C16/18
摘要： Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.
摘要翻译：用于在制造半导体器件中形成铜薄膜的铜（I）脒前体，以及使用化学气相沉积或原子层沉积工艺在基片上沉积铜（I）脒前体的方法。

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