专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明专利

JP2016003859A 液体輸送装置、及び、液体輸送方法审中-公开
公开(公告)号：JP2016003859A
公开(公告)日：2016-01-12
申请号：JP2014122132
申请日：2014-06-13
申请人： SEIKO EPSON CORP
发明人： MIYAMOTO TSUTOMU
IPC分类号： G01D5/244
摘要：【課題】カムやローターの回転によって駆動される液体輸送装置において、エンコーダーの電力消費を低減する。【解決手段】液体を輸送する際に回転するローターを有する駆動機構と、前記ローターの回転角度を検出する検出部と、を備える液体輸送装置であって、前記駆動機構の駆動と停止との切り替えに同期して、前記検出部の電源のONとOFFとが切り替えられる。【選択図】図18

102. 发明专利

JP2002359364A OPTICAL SENSOR AND OPTICAL SENSOR UNIT 失效
公开(公告)号：JP2002359364A
公开(公告)日：2002-12-13
申请号：JP2001165566
申请日：2001-05-31
申请人： SEIKO EPSON CORP
发明人： FUJIMORI YUJI , MIYAMOTO TSUTOMU
IPC分类号： H01L27/146 , G06T1/00 , H01L31/10 , H04N1/028 , H04N5/335 , H04N5/369
摘要： PROBLEM TO BE SOLVED: To provide a line sensor which can contribute to manufacturing cost reduction and in which a light receiving layer is hardly broken by stress. SOLUTION: This line sensor 1 is provided with a substrate 2, switching parts 7a-7z, sensors 8a-8z and a protecting layer 25. The switching parts 7a-7z are constituted of thin film transistors 71a-71z and a light shielding layer 72. The sensors 8a-8z are constituted of transparent electrodes 3a-3z, the light receiving layers 4a-4z and facing electrodes 56a-56z which are provided with first facing electrodes 6a-6z and semiconductor electrodes 5a-5z. In this case, the light receiving layers 4a-4z are mainly constituted of titanium oxide.

103. 发明专利

JP2002305041A SOLAR CELL 失效
公开(公告)号：JP2002305041A
公开(公告)日：2002-10-18
申请号：JP2001106086
申请日：2001-04-04
申请人： SEIKO EPSON CORP
发明人： MIYAMOTO TSUTOMU , FUJIMORI YUJI
IPC分类号： H01L31/04 , H01M14/00
摘要： PROBLEM TO BE SOLVED: To provide a solar cell having a superior durability. SOLUTION: A solar cell 1A has a first substrate 2, a first electrode 3 installed on the upper face of the first substrate 2, a semiconductor electrode 4 installed on the upper face of the first electrode 3, a wall part (wall member) 5 installed so as to surround the semiconductor electrode 4 and having a housing space 8 in this inside, a second electrode 6 installed opposing to the semiconductor electrode 4 via the wall part 5, a second substrate 7 installed on the upper face of the second electrode 6, and an electrolyte gel (gelatinous electrolyte) 81 housed in the housing space 8. The electrolyte gel 81 retains an electrolytic solution in a gel substrate, and as the gel substrate, a material which is mainly constituted of a thermoplastic resin, mainly constituted of a thermosetting resin, mainly constituted of a copolymer obtained by a polymerization of at least two kinds of compounds, or mainly constituted of the compound having a siloxane bond is preferable.

104. 发明专利

JP2002121683A METHOD FOR MANUFACTURING TITANIUM OXIDE FILM, TITANIUM OXIDE FILM, AND SOLAR CELL 失效
公开(公告)号：JP2002121683A
公开(公告)日：2002-04-26
申请号：JP2000312393
申请日：2000-10-12
申请人： SEIKO EPSON CORP
发明人： MIYAMOTO TSUTOMU , FUJIMORI YUJI
IPC分类号： C01G23/04 , C23C26/00 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a titanium oxide film having excellent photoelectric conversion efficiency, a method for manufacturing the titanium oxide film, and a solar cell. SOLUTION: The solar cell 1 is a so-called dry solar cell and constituted of: a substrate 2; a first electrode 3 provided onto the top surface of the substrate 2; the titanium oxide film 4 provided onto the top surface of the first electrode 3; and a second electrode 5 provided onto the top surface of the titanium oxide film 4. Further, a Schottky barrier is formed between the first electrode 3 and the titanium oxide film 4. The titanium oxide film 4 is composed essentially of titanium oxide. The surface roughness Ra at the light receiving surface of the titanium oxide film 4 is greater than the average particle size of titanium oxide powder used for the manufacture of the titanium oxide film 4. It is preferable that the surface roughness Ra at the light receiving surface of the titanium oxide film 4 is 1-10 μm and that the porosity of the titanium oxide film 4 is 10-50. In such a solar cell 1, it is preferable that R52/R90>=0.8 is satisfied where R90 and R52 are the photoelectric conversion efficiencies at 90 deg. and 52 deg. angle of incident of light upon the semiconductor 4, respectively.

105. 发明专利

JP2002121024A METHOD FOR MANUFACTURING TITANIUM OXIDE FILM, TITANIUM OXIDE FILM AND SOLAR CELL 失效
公开(公告)号：JP2002121024A
公开(公告)日：2002-04-23
申请号：JP2000312394
申请日：2000-10-12
申请人： SEIKO EPSON CORP
发明人： MIYAMOTO TSUTOMU , FUJIMORI YUJI
IPC分类号： C01G23/04 , C23C4/10 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a titanium oxide film having excellent photoelectric conversion efficiency, a method for manufacturing a titanium oxide film, and a solar cell. SOLUTION: The titanium oxide film 6 is formed by thermal spraying a source material essentially comprising titanium oxide into a film state. The thermal spraying process is carried out by using a plasma thermal spray device equipped with a thermal spraying gun 9 having an anode nozzle 91 and a cathode 92. Jet plasma is produced by generating arc between the anode nozzle 91 and cathode 92 while supplying work gas from a work gas passage 93. Further, by supplying the source material 8 into the jet plasma from a material passage 95, the activated source material is adsorbed onto the upper face of a first electrode 3 to form a titanium oxide film 4. Preferably, the source material 8 is mainly composed of titanium dioxide. The source material 8 is preferably a powder material having 10 nm to 100 μm average particle size. The source material 8 is preferably in a solid state in its center part during spraying. The thermal spraying is preferably carried out in an atmosphere containing hydrogen gas.

106. 发明专利

JP2002083987A SEMICONDUCTOR, METHOD FOR MANUFACTURING THE SEMICONDUCTOR, AND SOLAR CELL 失效
公开(公告)号：JP2002083987A
公开(公告)日：2002-03-22
申请号：JP2000270439
申请日：2000-09-06
申请人： SEIKO EPSON CORP
发明人： FUJIMORI YUJI , MIYAMOTO TSUTOMU
IPC分类号： H01L29/43 , H01L21/28 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor superior in photoelectric conversion, a method for manufacturing the semiconductor, and a solar cell. SOLUTION: A solar cell 1 is a so-called dry solar cell, and it comprises a substrate 2, a first electrode 3 on the upper surface of the substrate 2, a film-like semiconductor 4 on the upper surface of the first electrode 3, and a second electrode 5 on the upper surface of the semiconductor 4, and a Schottky barrier on the boundary between the second semiconductor 5 and semiconductor 4. The semiconductor 4 is obtained by molding a semiconductor material made mainly of titanium oxide powder. The band gap of the semiconductor 4 is set at 3.1 eV or less by reducing band gap at least in a part of the titanium oxide powder or a molded body made of semiconductor material.

107. 发明专利

JPH04173338A INK JET PRINTING HEAD 失效
公开(公告)号：JPH04173338A
公开(公告)日：1992-06-22
申请号：JP30174790
申请日：1990-11-07
申请人： SEIKO EPSON CORP
发明人： MIYAMOTO TSUTOMU
IPC分类号： B41J2/045 , B41J2/055
摘要： PURPOSE:To obtain an ink jet printing head which has an excellent high frequency response property and favorable discharge efficiency by providing an ink counterflow preventive mechanism in an ink chamber. CONSTITUTION:A plate-shaped piezoelectric element 2 is mounted on the top of an ink chamber 1, and a valve 12, which is an ink counterflow preventive mechanism, is formed, to correspond with a nozzle hole 5, in the ink chamber 1. At the time of ink discharging, since pressure in the ink chamber 1 becomes higher than that of an ink feeding part 3, the valve 12 is closed, and almost all the ink in the ink chamber 1 is ink-discharged without counterflowing to the ink feeding part 3 side, and discharging with high efficiency becomes possible. When the inside of the ink chamber 1 is returned to the original condition, the pressure in the ink chamber 1 becomes lower than that of the feeding part 3, and therefore, the valve 12 is opened, and the ink is fed in the ink chamber 1. By making the passage resistance from the nozzle hole 5 to the ink chamber 1 larger than the passage resistance from the ink feeding part 3 to the ink chamber 1, drawing of air bubbles from the nozzle hole 5 becomes hard to be generated at the time of ink feeding. That is, it is made possible to return the condition in the ink chamber 1 to the original condition at a high speed, and ink-discharging responded at a high speed.

108. 发明专利

JPH03251455A INK JET PRINT HEAD 失效
公开(公告)号：JPH03251455A
公开(公告)日：1991-11-08
申请号：JP5010490
申请日：1990-03-01
申请人： SEIKO EPSON CORP
发明人： MIYAMOTO TSUTOMU
IPC分类号： B41J2/045 , B41J2/055 , B41J2/12
摘要： PURPOSE:To improve reproducibility and preciseness of a discharge characteristic of ink drips, by feeding back temperature of a piezoelectric transducer so as to correct displacement thereof caused by temperature change, and by making an interval between a nozzle formation member and the piezoelectric transducer constant. CONSTITUTION:A feedback section 6 consists of a temperature feedback circuit 4 and a variable electric source 5. The temperature feedback circuit 4 makes the variable electric source 5 generate a correction voltage which cancels a displacement of a piezoelectric transducer 2 caused by temperature change, dependent on temperature of the piezoelectric transducer 2 measured at a thermometry section 3. The variable electric source 5 applies a correction voltage to a voltage in a drive circuit 7 which applies a voltage to the piezoelectric transducer 2. Accordingly, the displacement quantity of the piezoelectric transducer 2 caused by the temperature change can always be kept zero, so that the ink discharge characteristic can be stable.

109. 发明专利

JPS62292461A ELECTROTHERMAL TRANSFER TYPE THERMAL PRINTER HEAD MECHANISM 失效
公开(公告)号：JPS62292461A
公开(公告)日：1987-12-19
申请号：JP13539286
申请日：1986-06-11
申请人： SEIKO EPSON CORP
发明人： MIYAMOTO TSUTOMU
IPC分类号： B41J2/325 , B41J2/32
摘要： PURPOSE:To contrive simplification of an IC or a circuit, by providing output electrodes having a single output potential level and a common electrode having a potential level different from the output potential level of the output electrodes, with an insulating member provided therebetween with respect to the direction of lamination. CONSTITUTION:Electrodes 2 having only one output level are provided on a base substrate 1, and a common electrode 4 having an output potential level different from the output level of the electrodes 2 is provided thereon, with an insulating layer 3 provided therebetween. With a switching circuit 5 turned ON, a potential difference is generated between the electrodes 2 and 4, and a current 12 is caused to flow through a resistor layer 9 to generate heat in the layer 9. The heat is transferred to an ink layer 11 through a base layer 10, and an ink melted by the heat is transferred onto a paper. Accordingly, it is possible to simplify a driver IC or a circuit on a head, thereby reducing the total cost.

110. 发明专利

JP2003124488A SHORT-CIRCUITING DETECTING METHOD 审中-公开
公开(公告)号：JP2003124488A
公开(公告)日：2003-04-25
申请号：JP2001321086
申请日：2001-10-18
申请人： SEIKO EPSON CORP
发明人： MIYAMOTO TSUTOMU , FUJIMORI YUJI
IPC分类号： H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a short-circuiting detection method which can detect locations of short-circuiting easily and accurately. SOLUTION: The short-circuiting detection method is for detecting locations of short-circuiting between the first electrode and a hole transport layer in a cell which is so arranged to have a porous electron transport layer between the first electrode and the hole transport layer and a pigment layer contacting the porous electron transport layer. The method is as given by (1) to (4) as follows: In the method (1), a voltage is applied so as to make the first electrode positive and the hole transport layer negative and photons generated from the cells are measured. In the method (2), the cells irradiated with light are irradiated with a charged particle beam and secondary particles generated from the cells are measured. In the method (3), the cells are irradiated with light and potential differences are measured between the first electrode and the hole transport layer. In the method (4), while a voltage is applied so as to make the first electrode positive and the hole transport layer negative, short- circuiting currents are measured between the first electrode and the hole transport layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式