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101. 发明授权

US07012948B2 Method for assigning codes in uplink of synchronous wireless telecommunication system 失效
公开(公告)号：US07012948B2
公开(公告)日：2006-03-14
申请号：US09898954
申请日：2001-07-03
申请人： Duk-Kyung Kim , Yoon-Seok Jung , Sang-Yun Lee , Jin-Young Kim
发明人： Duk-Kyung Kim , Yoon-Seok Jung , Sang-Yun Lee , Jin-Young Kim
IPC分类号： H04B1/69 , H04B1/707 , H04B1/713
CPC分类号： H04J13/004 , H04B7/2628 , H04J13/18
摘要： A method for assigning codes in an uplink of a synchronous code division multiple access (CDMA) telecommunication system is disclosed. The method for assigning a code in a reverse channel of a synchronous wireless telecommunication system, comprising the steps of: a) at a mobile station, receiving time matching information of a scrambling code from a base station; b) at the mobile station, spreading data frame to be transmitted by an orthogonal code, thereby generating a spread data; and c) at the mobile station, multiplying the spread data by a scrambling code based on the time matching information of the scrambling code, thereby generating an encoded data.

102. 发明申请

US20050176093A1 SELECTIVE LABELING AGENT FOR PHOSPHOPROTEOME ANALYSIS AND PHOSPHORYLATED SITE ANALYSIS 失效
标题翻译：选择性标记物质用于磷酸盐分析和磷酸盐化位点分析
公开(公告)号：US20050176093A1
公开(公告)日：2005-08-11
申请号：US10907945
申请日：2005-04-21
申请人： Yeong Hee AHN , Jong Shin YOO , Jin Young KIM , Kun CHO
发明人： Yeong Hee AHN , Jong Shin YOO , Jin Young KIM , Kun CHO
IPC分类号： G01N33/68 , C12Q1/68 , C12P21/06 , G01N33/00
CPC分类号： G01N33/6848 , A61K31/155 , G01N33/6803 , G01N33/6842 , G01N2458/15
摘要： Disclosed is a method of analyzing mass of the phosphoproteins or phosphopeptides and of analyzing phosphorylated positions at a phosphoprotein or phosphopeptide, comprising the steps of: 1) dephosphorylating at least one Ser and/or Thr residue of the phosphoprotein or phosphopeptide; 2) tagging the dephosphorylated amino acid residues with a tag having a R-L-G moiety wherein R is a nucleophilic functional group that selectively bind with dephosphorylated amino acid residues, G is selected from the group consisting of guanidine moiety or protected guanidine moiety such as a mono-N-protected guanidino group, a di-N,N′-protected guanidino group and an N′-protected guanidino group, and L is a linker linking the R and the G; and 3) subjecting the tagged proteins or peptides to mass spectrometry. The method is capable of precisely analyzing mass of phosphoproteins of trace amounts as well as positions of phosphoryated amino acids.
摘要翻译：公开了一种分析磷蛋白或磷酸肽的质量并分析磷蛋白或磷酸肽的磷酸化位置的方法，包括以下步骤：1）使磷酸蛋白或磷酸肽的至少一个Ser和/或Thr残基去磷酸化; 2）用具有RLG部分的标签标记去磷酸化的氨基酸残基，其中R是与去磷酸化的氨基酸残基选择性结合的亲核官能团，G选自胍部分或被保护的胍部分，例如单 - N-保护的胍基，二-N，N'保护的胍基和N'保护的胍基，L是连接R和G的连接基团; 和3）对标记的蛋白质或肽进行质谱分析。该方法能够精确分析痕量的磷蛋白质量以及磷酸化氨基酸的位置。

103. 发明申请

US20050130354A1 Metal oxide semiconductor (MOS) transistor including a planarized material layer and method of fabricating the same 审中-公开
标题翻译：包括平面化材料层的金属氧化物半导体（MOS）晶体管及其制造方法
公开(公告)号：US20050130354A1
公开(公告)日：2005-06-16
申请号：US10988584
申请日：2004-11-16
申请人： Jin-young Kim , Maeda Shigenobu , Chang-jin Kang , Jeong-hwan Yang
发明人： Jin-young Kim , Maeda Shigenobu , Chang-jin Kang , Jeong-hwan Yang
IPC分类号： H01L21/335 , H01L21/00 , H01L21/336 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/66795
摘要： A method of fabricating a MOS transistor, and the MOS transistor fabricated by the method, includes providing a substrate, forming a predetermined layer having a non-planar surface on the substrate, the predetermined layer including at least one active region, forming a gate electrode material layer on the non-planar, predetermined layer, forming a material layer and a hard mask layer on an entire surface of the gate electrode material layer, and planarizing a top surface of the material layer to form a planarized material layer, forming a photoresist pattern on the planarized material layer and the hard mask layer to pattern the gate electrode material layer, forming a hard mask pattern by etching the hard mask layer using the photoresist pattern as an etching mask, and forming a predetermined pattern by etching the planarized material layer and the gate electrode material layer according to a shape of the hard mask pattern.
摘要翻译：制造MOS晶体管的方法和通过该方法制造的MOS晶体管包括提供衬底，在衬底上形成具有非平面表面的预定层，所述预定层包括至少一个有源区，形成栅电极在非平面预定层上形成材料层，在栅电极材料层的整个表面上形成材料层和硬掩模层，并且平坦化材料层的顶表面以形成平坦化的材料层，形成光致抗蚀剂在平坦化材料层和硬掩模层上形成图案以图案化栅电极材料层，通过使用光致抗蚀剂图案蚀刻硬掩模层作为蚀刻掩模形成硬掩模图案，并通过蚀刻平坦化材料层形成预定图案以及根据硬掩模图案的形状的栅电极材料层。

104. 发明授权

US06620750B2 Dielectric ceramic composition and method for manufacturing multilayered components using the same 失效
标题翻译：介电陶瓷组合物及其制造方法
公开(公告)号：US06620750B2
公开(公告)日：2003-09-16
申请号：US09945717
申请日：2001-09-05
申请人： Dong-Wan Kim , Do-Kyun Kwon , Jong-Sung Park , Jin-Young Kim
发明人： Dong-Wan Kim , Do-Kyun Kwon , Jong-Sung Park , Jin-Young Kim
IPC分类号： C04B35495
CPC分类号： C04B35/495 , B32B18/00 , B32B2311/08 , C04B35/6303 , C04B2235/3206 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3241 , C04B2235/3251 , C04B2235/3272 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3291 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/6025 , C04B2235/604 , C04B2235/77 , C04B2237/408 , C04B2237/704 , H01G4/1209
摘要： The present invention discloses dielectric ceramic compositions having dielectric properties suitable for high frequency bands, such as microwave and millimetric wave, and a method for manufacturing multilayered components, such as chip LC filters, chip duplexers, and dielectric filters for PCS, using the dielectric ceramic compositions. The dielectric ceramic composition not only possesses low dielectric loss, a high dielectric constant, and temperature stability, but are also capable of being sintered at low temperatures and simultaneously baked with metal electrodes, including silver, copper, silver/palladium. Therefore, the dielectric composition can be applied to temperature stable capacitors (NPO MLCC), microwave oscillators, substrates, filters, planar antenna and on the like. The dielectric composition are represented by the general formula: Ax′A1−x″By′B1−y″O4 where A′ and A″ are La, Nd, Y and Al; B′ and B″ are Nb and Ta.
摘要翻译：本发明公开了具有适用于高频带的介电特性的介电陶瓷组合物，例如微波和毫米波，以及用于制造多层组件的方法，例如片状LC滤波器，芯片双工器和用于PCS的介质滤波器，使用介电陶瓷组合物。电介质陶瓷组合物不仅具有低介电损耗，高介电常数和温度稳定性，而且还能够在低温下烧结并同时用包括银，铜，银/钯的金属电极烘烤。因此，可以将电介质组合物应用于温度稳定的电容器（NPO MLCC），微波振荡器，基板，滤波器，平面天线等。电介质组成由以下通式表示：其中A'和A“是La，Nd，Y和Al; B'和B“是Nb和Ta。

105. 发明授权

US06222903B1 Laminography system having a view selector with prism 失效
标题翻译： Laminography系统具有带棱镜的视图选择器
公开(公告)号：US06222903B1
公开(公告)日：2001-04-24
申请号：US09261494
申请日：1999-03-03
申请人： Hyeong-cheol Kim , Jong-eun Byun , Jin-young Kim , Chang-hyo Kim , Hyung Seok Cho , Kuk-won Ko , Young-jun Roh
发明人： Hyeong-cheol Kim , Jong-eun Byun , Jin-young Kim , Chang-hyo Kim , Hyung Seok Cho , Kuk-won Ko , Young-jun Roh
IPC分类号： A61B600
CPC分类号： G01N23/04
摘要： A laminography system includes a table, an X-ray source, an image intensifier, a view selector and a camera. The view selector has a prism for refracting a ray of light, and an adjusting part for adjusting the prism to a position in which images at a certain area of an image projecting plane of the image intensifier are received into the camera. The adjusting part has a first motor for rotating the prism along the circumferential direction of the image intensifier, and a second motor for rotating the prism in a direction perpendicular with respect to a radial direction of the image intensifier. Accordingly, the images at any areas of the image projecting plane of the image intensifier can be obtained. In addition, since an optical axis of the image passing through the prism and then received into the camera is in perpendicular relation with the camera, no image distortions occur.
摘要翻译：层析系统包括桌子，X射线源，图像增强器，视图选择器和照相机。视角选择器具有用于折射光线的棱镜和用于将棱镜调节到图像增强器的图像投影平面的特定区域的图像被接收到相机中的位置的调节部分。调整部具有用于沿图像增强器的圆周方向旋转棱镜的第一电动机和用于使棱镜沿与图像增强器的径向垂直的方向旋转的第二电动机。因此，可以获得图像增强器的图像投影平面的任何区域的图像。此外，由于通过棱镜然后被接收到相机中的图像的光轴与相机垂直，所以不会发生图像失真。

106. 发明授权

US6013309A Protection layer of plasma display panel and method of forming the same 失效
公开(公告)号：US6013309A
公开(公告)日：2000-01-11
申请号：US950975
申请日：1997-10-15
申请人： Jin Young Kim , Sen Gouk Kim , Myung Ho Park , Jae Hwa Ryu
发明人： Jin Young Kim , Sen Gouk Kim , Myung Ho Park , Jae Hwa Ryu
IPC分类号： H01J9/02 , H01J9/20 , H01J11/12 , H01J11/14 , H01J11/22 , H01J11/24 , H01J11/26 , H01J11/34 , H01J11/40 , B05D5/12 , B05D5/06
CPC分类号： H01J9/02 , H01J11/12 , H01J11/40 , H01J9/20 , Y10T428/24802 , Y10T428/24926 , Y10T428/252
摘要： A method of forming a protection layer of a plasma display panel, which has upper electrodes, lower electrodes and a barrier rib, includes the steps of: forming a dielectric layer on the upper electrodes; and forming a MgO protection layer on the dielectric layer by the method of direct coating the MgO solution on the surface of the dielectric layer. Some advantages are derived by properly mixing MgO particles, salt containing Mg, and organic binder and coating an MgO protection layer (thin film) on the surface of the PDP substrate irrespective of coating methods by simple facility and processing. These advantages include PDP MgO protection layer formation to reduce PDP production cost, time and firing voltages, and adjustment of the protection layer's thickness.

107. 发明公开

US20240110539A1 POWER GENERATION APPARATUS 审中-公开
公开(公告)号：US20240110539A1
公开(公告)日：2024-04-04
申请号：US18265340
申请日：2021-12-13
申请人： Jin Young KIM
发明人： Jin Young KIM
IPC分类号： F03B13/10 , F03B17/06
CPC分类号： F03B13/10 , F03B17/06 , F05B2210/132 , F05B2270/602
摘要： The present invention relates to a power generation apparatus. A power generation apparatus including according to an embodiment of the present invention includes: a main chamber provided with a main space for the accommodation of water, and configured to accommodate water sucked through a suction pipe on the bottom surface thereof; a support part; an auxiliary chamber configured to receive water from the main chamber or to supply water to the main chamber; a pressure pump configured to generate pressure and thus discharge air in the main space out of the main chamber through a discharge pipe provided on the ceiling surface of the main chamber; a spout part configured to spout water, sucked by the pressure pump and accommodated in the main space, out of the main chamber; and a power generation part configured to generate electric power using the pressure of water spouted by the spout part.

108. 发明申请

US20220065214A1 POWER GENERATION APPARATUS 有权
公开(公告)号：US20220065214A1
公开(公告)日：2022-03-03
申请号：US17418923
申请日：2020-01-03
申请人： Jin Young KIM
发明人： Jin Young KIM
IPC分类号： F03B13/06 , F03B17/06
摘要： The present invention relates to a power generation apparatus, and more particularly to a power generation apparatus that generates power by dropping collected water. A power generation apparatus according to an embodiment of the present invention includes: a chamber having an accommodation space for accommodating water, and configured to accommodate water introduced through an intake pipe disposed on the bottom surface thereof; a pressure pump configured to discharge the air of the accommodation space out of the chamber through a discharge pipe provided on the ceiling surface of the chamber by generating pressure; a spray unit provided on the side surface of the chamber, and configured to spray water, introduced by the pressure pump and accommodated in the accommodation space, out of the chamber; and a power generation unit configured to generate power using the pressure of water sprayed by the spray unit.

109. 发明申请

US20160104671A1 SEMICONDUCTOR DEVICES INCLUDING BIT LINE CONTACT PLUG AND PERIPHERAL TRANSISTOR 审中-公开
公开(公告)号：US20160104671A1
公开(公告)日：2016-04-14
申请号：US14970160
申请日：2015-12-15
申请人： Sung-Il Cho , Nam-Gun Kim , Jin-Young Kim , Hyun-Chul Yoon , Bong-Soo Kim , Kwan-Sik Cho
发明人： Sung-Il Cho , Nam-Gun Kim , Jin-Young Kim , Hyun-Chul Yoon , Bong-Soo Kim , Kwan-Sik Cho
IPC分类号： H01L23/528 , H01L23/535 , H01L29/06 , H01L27/108 , H01L29/78
CPC分类号： H01L23/528 , H01L23/535 , H01L27/1052 , H01L27/10873 , H01L27/10876 , H01L27/10885 , H01L27/10888 , H01L27/10894 , H01L27/10897 , H01L29/0649 , H01L29/42324 , H01L29/45 , H01L29/78 , H01L29/7827 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a cell area and a peripheral area includes a semiconductor substrate, a cell insulating isolation region delimiting a cell active region of the semiconductor substrate in the cell area, a word line disposed within the semiconductor substrate in the cell area, a bit line contact plug disposed on the cell active region, a bit line disposed on the bit line contact plug, a peripheral insulating isolation region delimiting a peripheral active region of the semiconductor substrate in the peripheral area, and a peripheral transistor including a peripheral transistor lower electrode and a peripheral transistor upper electrode. The bit line contact plug is formed at the same level in the semiconductor device as the peripheral transistor lower electrode, and the bit line electrode is formed at the same level in the semiconductor device as the peripheral transistor upper electrode.

110. 发明授权

US08724411B2 Memory devices and memory systems including discharge lines 有权
标题翻译：存储器件和存储器系统，包括放电线
公开(公告)号：US08724411B2
公开(公告)日：2014-05-13
申请号：US13251611
申请日：2011-10-03
申请人： Jin-Young Kim , Ki Whan Song , Jae Hee Oh , Ji-Hyun Jeong
发明人： Jin-Young Kim , Ki Whan Song , Jae Hee Oh , Ji-Hyun Jeong
IPC分类号： G11C7/00
CPC分类号： H01L27/2409 , G11C7/12 , G11C7/18 , G11C13/0004 , G11C2213/72 , G11C2213/79 , H01L27/2436
摘要： A non-volatile memory device can include a word line that is operatively coupled to a non-volatile memory cell. A local bit line can be operatively coupled to the non-volatile memory cell. A discharge line that is associated with the local bit line can be configured to discharge the local bit line and a discharge diode can be electrically coupled between the local bit line and the discharge line.
摘要翻译：非易失性存储器件可以包括可操作地耦合到非易失性存储器单元的字线。局部位线可以可操作地耦合到非易失性存储单元。与本地位线相关联的放电线可以被配置为放电本地位线，并且放电二极管可以电耦合在局部位线和放电线之间。

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