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91. 发明申请

US20110193055A1 NANOWHISKERS WITH PN JUNCTIONS, DOPED NANOWHISKERS, AND METHODS FOR PREPARING THEM 有权
标题翻译：具有PN结的纳米颗粒，DOPED NANOWHISKERS及其制备方法
公开(公告)号：US20110193055A1
公开(公告)日：2011-08-11
申请号：US13033111
申请日：2011-02-23
申请人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Åke Ledebo
发明人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Åke Ledebo
IPC分类号： H01L29/06 , B82Y99/00
CPC分类号： H01L29/0665 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/62 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02653 , H01L21/2258 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/861 , H01L29/885 , Y10S977/932
摘要： Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping.
摘要翻译：公开了纳米工程结构，其结合具有高迁移率导电性的纳米晶须并结合pn结。在一个实施方案中，第一半导体材料的纳米晶须具有第一带隙，并且包含至少一个具有第二带隙的第二材料的外壳沿其长度的至少部分包围所述纳米元件，所述第二材料被掺杂以提供相反的导电型电荷载体在沿着纳米晶须的长度的相应的第一和第二区域中，由此通过将电荷载流子转移到纳米晶须中而在纳米晶须中产生相应导电型电荷载体的对应的第一和第二区域，它们之间的自由载体。外壳材料的掺杂可以是退化的，以便在纳米晶须相邻的段内产生类似于Esaki二极管的重掺杂区域的相反导电类型的非常重的调制掺杂。在另一个实施方案中，纳米晶须被含有掺杂剂材料的聚合物材料包围。快速热退火的步骤使掺杂剂材料扩散到纳米晶须中。在另一个实施方案中，纳米晶须在两种不同的本征材料之间具有异质结，并且费米能级钉扎在界面处产生不掺杂的pn结。

92. 发明申请

US20100148213A1 TUNNEL DEVICE 审中-公开
标题翻译：隧道设备
公开(公告)号：US20100148213A1
公开(公告)日：2010-06-17
申请号：US12333318
申请日：2008-12-12
申请人： Yen-Wei Hsu , Whel-Chyou Wu
发明人： Yen-Wei Hsu , Whel-Chyou Wu
IPC分类号： H01L29/88 , H01L29/93
CPC分类号： H01L29/885 , H01L28/40 , H01L29/7311 , H01L33/0016
摘要： The present invention has provided a new diode and transistor by employing the characteristic of the tunnel diode. The new diode and transistor are field interacted and can be a solarcell, light sensor, thermal device, Hall device, pressure device or acoustic device which outputs self-excited multi-band waveforms with broad bandwidth. The present invention has also revealed a precisional switch which can works at high speeds and a capacitor whose capacitance can be actively controlled.
摘要翻译：本发明通过采用隧道二极管的特性提供了一种新的二极管和晶体管。新的二极管和晶体管是现场相互作用的，可以是输出具有宽带宽的自激多波段波形的太阳能电池，光传感器，热装置，霍尔装置，压力装置或声学装置。本发明还揭示出可以高速工作的精密开关和可以主动控制其电容的电容器。

93. 发明授权

US07170105B1 Type II interband heterostructure backward diodes 有权
标题翻译： II型带间异质结反向二极管
公开(公告)号：US07170105B1
公开(公告)日：2007-01-30
申请号：US10970359
申请日：2004-10-20
申请人： Joel N. Schulman , David H. Chow , Chanh Nguyen
发明人： Joel N. Schulman , David H. Chow , Chanh Nguyen
IPC分类号： H01L29/32 , H01L31/0336 , H01L31/072 , H01S5/00
CPC分类号： H01L29/88 , H01L29/205 , H01L29/885
摘要： A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a second valence band edge, with the difference a second band-gap, and the second layer formed permitting electron carrier tunneling transport. The second layer is between the first and a third layer, with the difference between the third valence band edge and the third conduction band edge a third band-gap. A Fermi level is nearer the first conduction band edge than the first valence band edge. The second valence band edge is beneath the first conduction band edge. The second conduction band edge is above the third valence band edge. The Fermi level is nearer the third valence band edge than to the third conduction band edge.
摘要翻译：一种半导体器件，其具有与具有第一价带边缘以上的能量的第一导带边缘的第一层的带间隧穿，其差异为第一带隙。具有第二导带边缘的第二层，其具有高于第二价带边缘的能量，所述差异为第二带隙，并且所述第二层形成为允许电子载流子隧道输送。第二层在第一和第三层之间，第三价带边缘和第三导带边缘之间的差异是第三带隙。费米能级比第一价带边缘更接近第一导带边缘。第二价带边缘在第一导带边缘之下。第二导带边缘高于第三价带边缘。费米能级比第三导带边缘更接近第三价带边缘。

94. 发明授权

US6436785B2 Method of manufacturing semiconductor device with a tunnel diode 有权
标题翻译：制造具有隧道二极管的半导体器件的方法
公开(公告)号：US6436785B2
公开(公告)日：2002-08-20
申请号：US83272401
申请日：2001-04-11
申请人： KONINKL PHILIPS ELECTRONICS NV
发明人： BROWN ADAM R , HURKX GODEFRIDUS A M , DE BOER WIEBE B , SLOTBOOM JAN W
IPC分类号： H01L29/866 , H01L29/24 , H01L29/885 , H01L21/20
CPC分类号： H01L29/885 , Y10S438/979
摘要： A semiconductor device with a tunnel diode comprises two mutually adjoining semiconductor regions (2, 3) of opposed conductivity types having high enough doping concentrations to provide a tunneling junction. Portions (2A, 3A) of the semiconductor regions adjoining the junction comprise a mixed crystal of silicon and germanium. The doping concentration of both phosphorus and boron are substantially increased, given the same amount of dopants being offered as during the formation of the remainder of the regions. The tunneling efficiency is substantially improved, and also because of the reduced bandgap of said portions (2A, 3A). A much steeper current-voltage characteristic both in the forward and in the reverse direction is achieved. Thus, the tunneling pn junction can be used as a transition between two conventional diodes which are stacked one on the other and formed in a single epitaxial growing process. The doping concentration may be 6x1019 or even more than 1020 at/cm3. A simple method of manufacturing such a device is preferably done at a temperature between 550° C. and 800° C.
摘要翻译：具有隧道二极管的半导体器件包括具有足够高掺杂浓度的相对导电类型的两个相互邻接的半导体区域（2,3）以提供隧道结。邻接连接处的半导体区域的部分（2A，3A）包括硅和锗的混合晶体。给定与在其余区域形成期间相同量的掺杂剂，磷和硼的掺杂浓度显着增加。隧道效率显着提高，并且还因为所述部分（2A，3A）的带隙减小。实现了在正向和反向方向上更陡峭的电流 - 电压特性。因此，隧道pn结可以用作两个常规二极管之间的过渡，这两个二极管彼此堆叠并且以单个外延生长工艺形成。掺杂浓度可以为6×1019或甚至高于1020 at / cm3。制造这种器件的简单方法优选在550℃和800℃之间的温度下进行。

95. 发明授权

US06232822B1 Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism 失效
标题翻译：半导体器件包括被偏置以通过冲击电离机制产生负的基极电流的双极晶体管
公开(公告)号：US06232822B1
公开(公告)日：2001-05-15
申请号：US08268728
申请日：1994-06-30
申请人： Koji Sakui , Takehiro Hasegawa , Shigeyoshi Watanabe , Fujio Masuoka , Tsuneaki Fuse , Toshiki Seshita , Seiichi Aritome , Akihiro Nitayama , Fumio Horiguchi
发明人： Koji Sakui , Takehiro Hasegawa , Shigeyoshi Watanabe , Fujio Masuoka , Tsuneaki Fuse , Toshiki Seshita , Seiichi Aritome , Akihiro Nitayama , Fumio Horiguchi
IPC分类号： H03K17687
CPC分类号： H01L27/1025 , G11C11/39 , H01L29/36 , H01L29/42304 , H01L29/456 , H01L29/73 , H01L29/7322 , H01L29/885 , H03F3/04 , H03K3/021 , H03K17/567
摘要： A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition IBE
摘要翻译：半导体器件包括双极晶体管，其发射极 - 集电极电压被设置为满足条件IBE

96. 发明授权

US4198644A Tunnel diode 失效
标题翻译：隧道二极管
公开(公告)号：US4198644A
公开(公告)日：1980-04-15
申请号：US914103
申请日：1978-06-09
申请人： Leo Esaki
发明人： Leo Esaki
IPC分类号： H01L21/203 , H01L29/205 , H01L29/885 , H01L29/88 , H01L29/161
CPC分类号： H01L29/205 , H01L21/02395 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L29/885
摘要： A tunnel diode is disclosed wich includes a heterostructure consisting of airst layer of GaSb.sub.1-y As.sub.y and a second layer of In.sub.1-x Ga.sub.x As. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel diode of the instant invention.
摘要翻译：公开了一种隧道二极管，其包括由第一层GaSb1-yAsy和第二层In1-xGaxA组成的异质结构。还公开了本发明的隧道二极管中可以使用III族和V族材料的其它合金。

97. 发明授权

US3167461A Process of preparing degenerately doped semiconductor source material 失效
标题翻译：制备退化掺杂半导体源材料的工艺
公开(公告)号：US3167461A
公开(公告)日：1965-01-26
申请号：US7989760
申请日：1960-12-30
申请人： IBM
发明人： COMPTON DINSDALE M J
IPC分类号： H01L21/205
CPC分类号： H01L29/66151 , H01L21/2225 , H01L21/2251 , H01L29/885 , Y10S148/04 , Y10S148/049 , Y10S252/951 , Y10S438/925

98. 发明公开

EP2168167A4 NANOWIRE-BASED SOLAR CELL STRUCTURE 审中-公开
公开(公告)号：EP2168167A4
公开(公告)日：2017-12-27
申请号：EP08767200
申请日：2008-06-19
申请人： QUNANO AB
发明人： SAMUELSON LARS , MAGNUSSON MARTIN , CAPASSO FEDERICO
IPC分类号： H01L31/0352 , B82B1/00 , H01L27/14 , H01L31/0392 , H01L31/042 , H01L31/18
CPC分类号： H01L31/0547 , G02B6/0096 , H01L29/885 , H01L31/0304 , H01L31/03046 , H01L31/035227 , H01L31/035281 , H01L31/03529 , H01L31/0725 , H01L31/0735 , H01L31/184 , H01L31/1844 , H01L31/1852 , Y02E10/544
摘要： The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell structure and a passivating shell (209) that encloses at least a portion of the nanowire (205). In a first aspect of the invention, the passivating shell (209) of comprises a light guiding shell (210), which preferably has a high- and indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbin order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures.

99. 发明公开

EP2870632A4 RADIAL NANOWIRE ESAKI DIODE DEVICES AND METHODS 有权
标题翻译： RADIAL隧道二极管，纳米线设备和方法
公开(公告)号：EP2870632A4
公开(公告)日：2016-03-09
申请号：EP13813238
申请日：2013-07-05
申请人： QUNANO AB
发明人： WERNERSSON LARS-ERIK , LIND ERIK , OHLSSON JONAS , SAMUELSON LARS , BJÖRK MIKAEL , THELANDER CLAES , DEY ANIL
IPC分类号： H01L29/885 , B82Y10/00 , H01L29/06 , H01L29/739 , H01L29/78 , H01L31/0693
CPC分类号： H01L27/0629 , B82Y10/00 , H01L29/0669 , H01L29/0676 , H01L29/068 , H01L29/122 , H01L29/205 , H01L29/517 , H01L29/66977 , H01L29/7391 , H01L29/78 , H01L29/78642 , H01L29/885 , H01L31/035227 , H01L31/06 , H01L31/068 , H01L31/0687 , Y02E10/50

100. 发明公开

EP2491595A4 NANOWIRE TUNNEL DIODE AND METHOD FOR MAKING THE SAME 审中-公开
标题翻译： NANODRAHTTUNNELDIONDE及其制造方法
公开(公告)号：EP2491595A4
公开(公告)日：2014-03-19
申请号：EP10825300
申请日：2010-10-22
申请人： SOL VOLTAICS AB
发明人： BORGSTROEM MAGNUS , HEURLIN MAGNUS , FAELT STEFAN
IPC分类号： H01L29/885 , B82B1/00 , H01L29/06 , H01L31/0352
CPC分类号： H01L29/88 , B82Y10/00 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/205 , H01L29/885 , H01L31/035227 , H01L31/076 , H01L31/1852 , Y02E10/544 , Y02E10/548 , Y02P70/521

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