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91. 发明申请

WO1994006182A1 SYSTEM AND METHOD FOR SELECTIVELY LASER PROCESSING A TARGET STRUCTURE OF MATERIALS OF A MULTIMATERIAL, MULTILAYER DEVICE 审中-公开
标题翻译：用于选择性激光加工多元材料，多层设备的材料的目标结构的系统和方法
公开(公告)号：WO1994006182A1
公开(公告)日：1994-03-17
申请号：PCT/US1993008484
申请日：1993-09-10
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , SUN, Yunlong , HUTCHENS, Craig, Dean
发明人： ELECTRO SCIENTIFIC INDUSTRIES, INC.
IPC分类号： H01S03/09
CPC分类号： B23K26/06 , B23K26/0643 , B23K26/351 , B23K26/361 , B23K26/40 , B23K2101/34 , B23K2103/08 , B23K2103/10 , B23K2103/12 , B23K2103/14 , B23K2103/172 , B23K2103/26 , B23K2103/50 , H01L21/76894 , H01S3/025 , H01S3/0401 , H01S3/09415 , H01S3/11 , H01S3/1611 , H01S3/1653 , Y10S438/94
摘要： A laser system and processing method exploits the absorption contrast between the materials from which a link (12) or film and an underlying substrate (22) are made to effectively remove the link or film from the substrate. Laser output in a wavelength range of 1.2 to 2.0 (my)m (30) optimizes the absorption contrast between many high conductivity materials (e.g., metals) or resistive films and silicon substrates and permits the use of laser output in a wider range of energy or power levels, pulse widths, without risking damage to the silicon substrates or adjacent circuit structures. Existing link or film processing laser systems can be readily modified to operate in the 1.2 to 3.0 (my)m range. The laser system and processing method also exploits a wavelength range in which functional or active dedicated devices, having light-sensitive or photo-electronic portions integrated into their circuits, can be effectively trimmed without inducing malfunctions or function shifts in the processed devices.
摘要翻译：激光系统和处理方法利用材料之间的吸收对比度，其中链接（12）或膜和下面的基底（22）被制成以有效地从基底去除连接或膜。波长范围为1.2至2.0（my）m（30）的激光输出优化了许多高导电性材料（例如金属）或电阻膜和硅衬底之间的吸收对比度，并允许在更宽的能量范围内使用激光输出或功率电平，脉冲宽度，而不会对硅衬底或相邻电路结构造成危害。现有的连接或电影处理激光系统可以容易地修改为在1.2到3.0（我）的范围内操作。激光系统和处理方法还利用了波长范围，其中可以有效地修整具有集成到其电路中的光敏或光电子部分的功能或有源专用器件，而不会引起处理器件中的故障或功能移位。

92. 发明申请

WO1981000326A1 SILICON ON SAPPHIRE LASER PROCESS 审中-公开
标题翻译：硅胶激光工艺
公开(公告)号：WO1981000326A1
公开(公告)日：1981-02-05
申请号：PCT/US1980000917
申请日：1980-07-23
申请人： HUGHES AIRCRAFT CO
发明人： HUGHES AIRCRAFT CO , YAROM G , HESS L , HARARI E , WANG S
IPC分类号： H01L21/265
CPC分类号： H01L21/76894 , H01L21/268
摘要： A beam of radiant energy (13) such as a laser beam is applied to an epitaxial silicon island on a silicon on sapphire device before formation of overlying layers of oxide and metal. The energy beam (13) changes the crystal structure of the epitaxial silicon island (2) to increase the mobility of carriers in the silicon island (2), improving the speed of transistors formed on the silicon island (2). The energy beam (13) also causes the material in the silicon island edge (2) to reflow, causing a reduction in the slope of the edge face of the silicon island edge (3), and a smoothing of the surface of the face, resulting in improved aluminum step coverage and elimination of a V-shaped groove in the first insulation layer (6) at the bottom corner edge (8) of the island (2), thereby increasing processing yield.
摘要翻译：在形成覆盖层的氧化物和金属之前，将诸如激光束的辐射能束（13）施加到蓝宝石器件上的硅上的外延硅岛上。能量束（13）改变外延硅岛（2）的晶体结构，以增加硅岛（2）中载流子的迁移率，从而提高在硅岛（2）上形成的晶体管的速度。能量束（13）还使得硅岛边缘（2）中的材料回流，导致硅岛边缘（3）的边缘面的斜率减小，并且使表面的平滑化，导致铝台阶覆盖的改善和岛（2）的底角边缘（8）处的第一绝缘层（6）中的V形槽的消除，从而提高加工产量。

93. 发明公开

EP3417342A1 ARRAY SUBSTRATE AND REPAIR METHOD, DISPLAY PANEL AND DISPLAY APPARATUS 审中-公开
公开(公告)号：EP3417342A1
公开(公告)日：2018-12-26
申请号：EP16838054.1
申请日：2016-07-01
申请人： BOE Technology Group Co., Ltd. , Hefei Xinsheng Optoelectronics Technology Co., Ltd
发明人： LI, Junjie , TENG, Fei , LIU, Guoquan
IPC分类号： G02F1/13
CPC分类号： G02F1/136259 , G02F1/134363 , G02F2001/136263 , G02F2001/136272 , G02F2201/121 , G02F2201/123 , H01L21/76894 , H01L22/22 , H01L27/1244
摘要： The present disclosure provides an array substrate and and a repair method thereof. The array substrate comprises a first metal layer including a signal line; a first repair layer; and a first insulating layer. The first insulating layer is disposed between, and provides insulation between, the first metal layer and the first repair layer, and it is configured to be penetrable to allow the first repair layer to electrically connect the signal line to thereby repair connection weakness of the signal line. The first repair layer can comprise a first repair line, which is disposed over and along the signal line and is configured to be able to electrically connect two ends of a weak connection portion of the signal line through vias penetrating the first insulating layer.

94. 发明授权

EP1393389B1 LASER PATTERNING OF DEVICES 有权
公开(公告)号：EP1393389B1
公开(公告)日：2018-12-05
申请号：EP02735581.7
申请日：2002-05-22
申请人： Flexenable Limited
发明人： SIRRINGHAUS, Henning , CAIN, Paul Alan
IPC分类号： H01L51/40 , H01L27/28 , G03F7/00
CPC分类号： H01L51/0016 , B82Y10/00 , B82Y40/00 , G03F7/00 , G03F7/0002 , H01L21/76894 , H01L51/0004 , H01L51/0017 , H01L51/0023 , H01L51/0037 , H01L51/0039 , H01L51/0516 , H01L51/0541
摘要： A technique for forming on a substrate an electrical device including at least one patterned layer, the technique comprising selectively exposing material on the substrate to a beam of light so as to modify the physical properties of a first layer and bring about patterning of the first layer.

95. 发明公开

EP2463928A3 Layer-selective laser ablation patterning 有权转让
标题翻译：层选择性激光烧蚀图案
公开(公告)号：EP2463928A3
公开(公告)日：2014-06-25
申请号：EP12157149.1
申请日：2006-05-30
申请人： Plastic Logic Limited
发明人： Hayton, Carl , Cain, Paul , Brown, Thomas Meredith
IPC分类号： H01L51/05 , H01L51/40
CPC分类号： H01L51/102 , B23K26/0622 , B23K26/064 , B23K26/40 , B23K26/402 , B23K2203/172 , B23K2203/50 , H01L21/02675 , H01L21/268 , H01L21/76894 , H01L27/1214 , H01L27/1259 , H01L29/78681 , H01L51/0017 , H01L51/0021 , H01L51/0023 , H01L51/0545 , H01L51/055
摘要： The present invention relates to methods of fabricating electronic devices such as thin film transistor (TFT) structures using laser ablation for selective patterning.
A method of fabricating an organic electronic device on a substrate (1), said organic electronic device having a structure including an upper conductive layer (5) and an underlying layer (4) immediately beneath said upper conducting layer and with at least one solution processable semiconducting layer (3), the method comprising patterning said upper conductive layer of said structure by laser ablation, and wherein said laser ablating comprises repeatedly removing portions of said layer of material at substantially the same spatial position to expose said underlying layer using repeated laser pulses, each said pulse having a duration of less than 1ns.
摘要翻译：本发明涉及使用用于选择性图案化的激光烧蚀来制造诸如薄膜晶体管（TFT）结构的电子器件的方法。一种在衬底（1）上制造有机电子器件的方法，所述有机电子器件具有包括上导电层（5）和紧邻所述上导电层之下的下层（4）的结构，并且具有至少一种可溶液处理（3），所述方法包括通过激光烧蚀图案化所述结构的所述上导电层，并且其中所述激光烧蚀包括在基本上相同的空间位置处反复去除所述材料层的部分以使用重复的激光脉冲来暴露所述下层，每个所述脉冲具有小于1ns的持续时间。

96. 发明授权

EP2223327B1 METHODS AND SYSTEMS FOR REMOVING A MATERIAL FROM A SAMPLE 有权转让
标题翻译：方法和系统材料去除从样本
公开(公告)号：EP2223327B1
公开(公告)日：2013-04-17
申请号：EP08864869.6
申请日：2008-12-18
申请人： Carl Zeiss SMS GmbH
发明人： AUTH, Nicole , SPIES, Petra , BRET, Tristan , BECKER, Rainer , HOFMANN, Thorsten , EDINGER, Klaus
IPC分类号： H01J37/28 , C23F4/00 , H01L21/66 , H01L21/768 , H01J37/305
CPC分类号： C23F4/00 , H01J37/3056 , H01J2237/28 , H01J2237/3174 , H01L21/76894 , H01L22/22 , H01L2924/0002 , H01L2924/00

97. 发明公开

EP2400539A3 Substrate dividing method 有权
标题翻译： Verfahren zum abtrennen eines底物
公开(公告)号：EP2400539A3
公开(公告)日：2013-02-13
申请号：EP11182633.5
申请日：2003-03-06
申请人： Hamamatsu Photonics K.K.
发明人： Fujii, Yoshimaro , Fukuyo, Fumitsugu , Fukumitsu, Kenshi , Uchiyama, Naoki
IPC分类号： H01L21/78 , B23K26/40 , B23K26/06 , B28D5/00
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/063 , B23K26/40 , B23K26/4075 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
摘要翻译：一种衬底分割方法，其可以在防止碎裂和破裂的同时，对衬底进行薄层化和分割。该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，形成包含熔融处理区域的改质区域在半导体衬底1内的多光子吸收，并且使包括熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

98. 发明公开

EP1610377A3 System for modifying small structures 有权
标题翻译：系统修改小结构
公开(公告)号：EP1610377A3
公开(公告)日：2009-04-29
申请号：EP05075796.2
申请日：2005-04-07
申请人： FEI COMPANY
发明人： Gu, George Y. , Bassom, Neil J. , Gannon, Thomas J. , Liu, Kun
IPC分类号： H01L21/768 , H01L21/288
CPC分类号： H01L21/76894 , C25D3/665 , C25D5/02 , C25F3/12 , C25F3/14 , H01L21/2885 , H01L21/32134 , H01L21/76892
摘要： A charge transfer mechanism is used to locally deposit material or remove material to alter for a small structure, such as a part of an integrated circuit (114, 1100). A local electrochemical cell (110) is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam (702, 802, 902) or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber (700).

99. 发明公开

EP1234340A4 FORMATION OF CONTACTS ON THIN FILMS 审中-公开
标题翻译：生产薄膜ON KONATAKTEN
公开(公告)号：EP1234340A4
公开(公告)日：2008-03-26
申请号：EP00971158
申请日：2000-10-31
申请人： CSG SOLAR AG
发明人： BASORE PAUL ALAN
IPC分类号： H01L31/04 , H01L21/768 , H01L31/0224 , H01L23/485 , H01L27/082 , H01L31/05 , H01L31/18
CPC分类号： H01L21/76802 , H01L21/76894 , H01L31/022425 , Y02E10/50
摘要： A simple thin film structure in which a substrate (22), which may be glass or any other suitable substrate material, supports a semiconductor device structure (12), over which is formed a dielectric barrier (17) and a composite metal film contact structure (23, 28). The contact structure is formed by creating holes (19) in the dielectric barrier (17) at locations where contact to the upper region (13) of the semiconductor material is required, and then forming a first metal film (23) over the dielectric (17) and extending into the holes (19) to contact the surface of the top region of the semiconductor structure (12). A second set of holes (32) are created through the first metal film (23), the dielectric structure (17) and into the semiconductor structure (12) to expose an underlying region (15) having an opposite polarity to the region (13) exposed by the first holes (19). The surfaces of the second holes (23) are doped with the same dopant polarity as the underlying region (15) and a second metal film (28) is formed over the first metal film (23) and extending into the holes (32) to contact the underlying semiconductor region. The metal structure is then scribed between each first hole (19) and adjacent second holes (32) to isolate the contacts to the upper and lower semiconductor regions.

100. 发明公开

EP1635390A2 Substrate dividing method 有权
标题翻译： Methode zur Trennung von Substraten
公开(公告)号：EP1635390A2
公开(公告)日：2006-03-15
申请号：EP05077644.2
申请日：2003-03-06
申请人： HAMAMATSU PHOTONICS K. K.
发明人： Fujii, Yoshimaro , Fukuyo, Fumitsugu , Fukumitsu, Kenshi , Uchiyama, Naoki
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/063 , B23K26/40 , B23K26/4075 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
摘要翻译：一种衬底分割方法，其可以在防止碎裂和破裂的同时，对衬底进行薄层化和分割。该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，形成包含熔融处理区域的改质区域在半导体衬底1内的多光子吸收，并且使包括熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

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