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91. 发明公开

EP1024513A1 SEMICONDUCTOR PHOTOELECTRIC SURFACE 有权
标题翻译： HALBLEITENDE PHOTOELEKTRISCHEOBERFLÄCHE
公开(公告)号：EP1024513A1
公开(公告)日：2000-08-02
申请号：EP98941849.6
申请日：1998-09-11
申请人： Hamamatsu Photonics K.K.
发明人： NIHASHI, Tokuaki
IPC分类号： H01J1/34 , H01J40/06
CPC分类号： H01J40/06 , H01J1/34 , H01J2201/3423
摘要： In a photocathode 10 using a photocathode of the present invention as a photocathode 30, within a hermetic envelope 20 maintained under vacuum, the photocathode 30 and an anode 40 are disposed so as to oppose each other while voltages are applied thereto by way of lead pins 51, 52, respectively. In the photocathode 30, a sapphire substrate 32 on which a matching layer 33 made of a-AlN, an active layer 34 made of p-type GaN, and a surface layer 35 made of CsO are stacked is secured to a metal support plate 31. The dopant concentration of the active layer 34 increases from 1 × 10 16 cm -3 in the surface to 5 × 10 17 cm -3 at a depth of 100 nm, while being 1 × 10 18 cm -3 only in the deepest portion of 10 nm. As a consequence, the crystallinity of the active layer 34 improves, and the diffusion length increases, whereby the quantum efficiency and the sharp-cuffing property improve.
摘要翻译：在使用本发明的光电阴极作为光电阴极30的光电阴极10中，在保持真空的密封外壳20内，将光电阴极30和阳极40配置成彼此相对，同时通过引线引脚施加电压分别为51,52。在光电阴极30中，将由a-AlN制成的匹配层33，由p型GaN制成的有源层34和由CsO制成的表面层35叠层的蓝宝石衬底32固定到金属支撑板31 活性层34的掺杂剂浓度在100nm的深度从表面的1×10 16 cm -3增加到5×10 17 cm -3，同时为1×10 17 cm -3， 18> cm -3，仅在10nm的最深部分。结果，活性层34的结晶度提高，扩散长度增加，从而提高了量子效率和尖锐的褶皱性。

92. 发明专利

TW201810695A 具奈米線之光陰極及其製造方法审中-公开
简体标题：具奈米线之光阴极及其制造方法
公开(公告)号：TW201810695A
公开(公告)日：2018-03-16
申请号：TW106117587
申请日：2017-05-26
申请人：佛托尼斯法國公司 , PHOTONIS FRANCE , 國際科學研究中心 , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
发明人：艾伯特克勞迪亞 , ALIBERT, CLAUDE , 康迪茅斯塔法 , CONDE, MOUSTAPHA , 哈美德珍克里斯多夫 , HARMAND, JEAN-CHRISTOPHE , 傑構瑞西歐 , JEGOREL, THEO
IPC分类号： H01L31/0224 , H01L31/0328 , B82Y15/00
CPC分类号： H01J9/12 , H01J1/34 , H01J40/06
摘要：本發明揭露一光陰極，其包含一諸如一玻璃基材的非晶基材，其提供一將接收入射光子之輸入面以及一與該正面相對之背面。由至少一III-V族半導體材料所製造之奈米線係沉積在該基材的該背面上並且從此面以一遠離該正面之方向延伸。本發明亦有關於一種藉由MBE製造此光陰極的方法。
简体摘要：本发明揭露一光阴极，其包含一诸如一玻璃基材的非晶基材，其提供一将接收入射光子之输入面以及一与该正面相对之背面。由至少一III-V族半导体材料所制造之奈米线系沉积在该基材的该背面上并且从此面以一远离该正面之方向延伸。本发明亦有关于一种借由MBE制造此光阴极的方法。

93. 发明授权

EP3695431B1 RUTHENIUM ENCAPSULATED PHOTOCATHODE ELECTRON EMITTER 有权
公开(公告)号：EP3695431B1
公开(公告)日：2024-08-28
申请号：EP18865695.3
申请日：2018-10-10
IPC分类号： H01J37/073 , H01J37/28 , H01J1/34 , H01J40/06
CPC分类号： H01J1/34 , H01J37/073 , H01J40/06 , H01J40/18 , H01J2201/30820130101 , H01J2201/342520130101 , H01J2201/342620130101 , H01J2237/0633320130101 , H01J2237/281720130101

94. 发明授权

EP2973713B1 PHOTOMULTIPLIER TUBE, IMAGE SENSOR, AND AN INSPECTION SYSTEM USING A PMT OR IMAGE SENSOR 有权
标题翻译：光电倍增管，图像传感器和使用PMT或图像传感器的检测系统
公开(公告)号：EP2973713B1
公开(公告)日：2017-11-29
申请号：EP14779717.9
申请日：2014-04-01
申请人： KLA - Tencor Corporation
发明人： CHUANG, Yung-Ho Alex , BROWN, David L. , FIELDEN, John
IPC分类号： H01L31/0216 , H01J40/06 , H01J43/08 , H01L31/103
CPC分类号： H01J40/06 , H01J43/08 , H01L31/02161 , H01L31/103
摘要： A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

95. 发明公开

EP3240009A1 PHOTOELECTRIC SURFACE, PHOTOELECTRIC CONVERSION TUBE, IMAGE INTENSIFIER, AND PHOTOMULTIPLIER TUBE 有权
标题翻译：光电表面，光电转换管，图像增强器和光电倍增管
公开(公告)号：EP3240009A1
公开(公告)日：2017-11-01
申请号：EP15872812.1
申请日：2015-12-15
申请人： Hamamatsu Photonics K.K.
发明人： SASAKI Tatsuo
IPC分类号： H01J1/34 , H01J1/78 , H01J29/38 , H01J31/50 , H01J40/06 , H01J40/16
CPC分类号： H01J1/34 , H01J1/78 , H01J29/38 , H01J31/49 , H01J31/50 , H01J31/506 , H01J40/06 , H01J40/16 , H01J2201/3423 , H01J2201/3426 , H01J2231/50021
摘要： The present invention improves sensitivity of the ultraviolet band of a photoelectric surface. A photoelectric surface 1 includes a window material 2 that transmits ultraviolet rays, a conductive film 3 that is formed on the window material 2 and has conductivity, an intermediate film 4 that is formed on the conductive film 3 and is formed of MgF 2 , and a photoelectric conversion film 6 that is formed on the intermediate film 4 and is formed of CsTe. Since the photoelectric surface 1 includes the intermediate film 4 formed of MgF 2 , the sensitivity of the ultraviolet band is improved.
摘要翻译：本发明提高了光电表面的紫外波段的灵敏度。光电面1具备透过紫外线的窗材2，形成于窗材2上且具有导电性的导电膜3，形成于导电膜3上且由MgF 2形成的中间膜4，形成在中间膜4上并由CsTe形成的光电转换膜6。由于光电面1包括由MgF 2形成的中间膜4，所以紫外带的灵敏度得到改善。

96. 发明授权

EP2309529B1 PHOTOCATHODE 有权
公开(公告)号：EP2309529B1
公开(公告)日：2017-10-04
申请号：EP08874613.6
申请日：2008-11-07
申请人： Hamamatsu Photonics K.K.
发明人： MATSUI, Toshikazu , HAMANA, Yasumasa , NAKAMURA, Kimitsugu , ISHIGAMI, Yoshihiro , OGURI, Daijiro
IPC分类号： H01J1/34 , H01J40/06 , H01J31/26
CPC分类号： H01J40/06 , H01J1/34 , H01J31/26

97. 发明公开

EP2973713A4 PHOTOMULTIPLIER TUBE, IMAGE SENSOR, AND AN INSPECTION SYSTEM USING A PMT OR IMAGE SENSOR 有权
标题翻译：带有PMT或PICTOR传感器的照片视频管，图像传感器和检查系统
公开(公告)号：EP2973713A4
公开(公告)日：2016-10-05
申请号：EP14779717
申请日：2014-04-01
申请人： KLA TENCOR CORP
发明人： CHUANG YUNG-HO ALEX , BROWN DAVID L , FIELDEN JOHN
IPC分类号： H01L27/146 , H01J40/06 , H01J43/08 , H01L31/103
CPC分类号： H01J40/06 , H01J43/08 , H01L31/02161 , H01L31/103
摘要： A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.
摘要翻译：光电倍增管包括半导体光电阴极和光电二极管。值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层半导体层。半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。半导体光电阴极可以包括例如氮化镓。一个或多个p掺杂氮化镓层。在其它实施例中，半导体光电阴极可以包括硅。该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

98. 发明授权

EP2545578B1 A PHOTO CATHODE FOR USE IN A VACUUM TUBE AS WELL AS SUCH A VACUUM TUBE 有权
标题翻译： PHOTO阴极真空管和这样的真空管
公开(公告)号：EP2545578B1
公开(公告)日：2016-03-09
申请号：EP11712028.7
申请日：2011-03-11
申请人： Photonis France SAS
发明人： NÜTZEL, Gert , LAVOUTE, Pascal , FONTAINE, Christophe , JACKMAN, Richard
IPC分类号： H01J40/06 , H01J1/34
CPC分类号： H01J1/34 , H01J40/06

99. 发明公开

EP2907154A1 PHOTOCATHODE SEMI-TRANSPARENTE À TAUX D'ABSORPTION AMÉLIORÉ 有权
标题翻译：具有改进的吸收率半透明光阴极
公开(公告)号：EP2907154A1
公开(公告)日：2015-08-19
申请号：EP12773306.1
申请日：2012-10-12
申请人： Photonis France
发明人： NÜTZEL, Gert , LAVOUTE, Pascal
IPC分类号： H01J1/34 , H01J40/06 , H01J40/16
CPC分类号： H01J1/34 , H01J40/06 , H01J40/16 , H01J43/02
摘要： The invention relates to a semi-transparent photocathode (1) for photon detector exhibiting an increased absorption rate for a retained transport rate. According to the invention, the photocathode (1) comprises a transmission diffraction grating (30) able to diffract said photons and disposed in the support layer (10) on which the photoemissive layer (20) is deposited.

100. 发明公开

EP2309529A4 PHOTOCATHODE 有权
标题翻译：光阴极
公开(公告)号：EP2309529A4
公开(公告)日：2015-06-03
申请号：EP08874613
申请日：2008-11-07
申请人： HAMAMATSU PHOTONICS KK
发明人： MATSUI TOSHIKAZU , HAMANA YASUMASA , NAKAMURA KIMITSUGU , ISHIGAMI YOSHIHIRO , OGURI DAIJIRO
IPC分类号： H01J1/34 , H01J31/26 , H01J40/06
CPC分类号： H01J40/06 , H01J1/34 , H01J31/26

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