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    • 91. 发明申请
    • CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD
    • 充电颗粒光束写字装置和充电颗粒光束写字方法
    • US20120211676A1
    • 2012-08-23
    • US13368786
    • 2012-02-08
    • Takashi KAMIKUBO
    • Takashi KAMIKUBO
    • G21K5/10
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/30483H01J2237/31776H01J2237/31793
    • A charged particle beam writing apparatus includes an unit to measure height positions of a substrate, an unit to input a position dependent height distribution obtained by converting each position error of a pattern generated depending on each corresponding writing position of the substrate into a value in a height direction, and to add the position dependent height distribution to a height distribution obtained based on the height positions in order to correct the height distribution of the substrate, an unit to calculate a deflection shift amount of a pattern to be written by using a corrected height distribution, an unit to calculate a deflection amount for deflecting a beam to a position where a calculated deflection shift amount has been corrected, and an unit to write a pattern on the substrate by deflecting the beam by a calculated deflection amount.
    • 带电粒子束写入装置包括用于测量衬底的高度位置的单元,用于输入通过将根据衬底的每个相应写入位置生成的图案的每个位置误差转换为基板的每个位置误差而获得的与位置相关的高度分布的单元 并且将位置相关高度分布添加到基于高度位置获得的高度分布,以便校正基底的高度分布;单元,通过使用经校正的高度分布来计算要写入的图案的偏移偏移量 高度分布的单元,用于计算用于将光束偏转到已经校正了计算出的偏转偏移量的位置的偏转量的单元,以及通过使光束偏转计算的偏转量来将图案写入基板的单元。
    • 92. 发明授权
    • Electron beam exposure apparatus and method for cleaning the same
    • 电子束曝光装置及其清洗方法
    • US07737421B2
    • 2010-06-15
    • US12077153
    • 2008-03-17
    • Hiroshi YasudaYoshihisa Ooae
    • Hiroshi YasudaYoshihisa Ooae
    • G03B27/42G03B27/54
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/31793
    • Provided is an electron beam exposure apparatus for forming a desired pattern on a sample mounted on a wafer stage by exposure with an electron beam generated form an electron gun. The electron beam exposure apparatus includes: supplying device of injecting a reducing gas into a column in which the electron gun and the wafer stage are housed; and control unit of performing control so that the injection of the reducing gas into the column is continued for a predetermined period of time. Organic contamination is combined with H generated from the reducing gas by irradiation of an electron beam, and then evaporates. Further included is supplying device of injecting an ozone gas into the column. The control unit may perform control so that the injection of the ozone gas into the column in addition to the injection of the reducing gas is continued for a predetermined period of time.
    • 提供一种电子束曝光装置,用于通过用电子枪产生的电子束曝光在安装在晶片台上的样品上形成所需图案。 电子束曝光装置包括:将还原气体注入到容纳电子枪和晶片台的列中的供给装置; 以及执行控制的控制单元,使得将还原气体注入到所述列中持续预定时间段。 有机污染与通过照射电子束从还原气体生成的H结合,然后蒸发。 还包括向柱中注入臭氧气体的供给装置。 控制单元可以执行控制,使得除了注入还原气体之外,将臭氧气体注入到塔中持续预定的时间段。
    • 93. 发明授权
    • Charged particle beam processing apparatus
    • 带电粒子束处理装置
    • US07528393B2
    • 2009-05-05
    • US11235411
    • 2005-09-26
    • Kiminobu Akeno
    • Kiminobu Akeno
    • A61N5/00
    • H01L21/67213B82Y10/00B82Y40/00H01J37/3174H01J2237/31793
    • A charged particle beam processing apparatus includes a sample chamber to process a substrate including side faces by a charged particle beam, a movable stage in the sample chamber, the stage including a place on which the substrate is to be mounted, a height and position acquiring unit to acquire a height of the substrate on the stage by irradiating a laser beam onto the substrate on the stage and using the laser beam reflected from the substrate and to acquire positions of at least two adjacent side faces among the side faces based on the acquired height, and a calculating unit to calculate a position of center of gravity of the substrate on the stage and a rotation angle as to a rotary axis vertical to the place on which the substrate is to be mounted based on the positions of the at least two adjacent side faces.
    • 带电粒子束处理装置包括:样品室,用于处理包含带电粒子束的侧面的基板;样本室中的可移动台;该台包括要安装基板的位置;高度和位置获取 单元,通过将激光束照射在载物台上的基板上并使用从基板反射的激光束并基于获得的位置获取侧面中的至少两个相邻侧面的位置来获取台架上的基板的高度 高度,以及计算单元,其基于所述至少两个位置的位置来计算在所述台上的所述基板的重心位置和垂直于要安装所述基板的位置的旋转轴的旋转角度 相邻的侧面。
    • 95. 发明授权
    • Method and apparatus for electron-beam lithography
    • 电子束光刻的方法和装置
    • US07342241B2
    • 2008-03-11
    • US11179628
    • 2005-07-13
    • Yasuko AokiTsutomu TawaYoshimitsu Saze
    • Yasuko AokiTsutomu TawaYoshimitsu Saze
    • G21K5/04H01J33/00
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/31793
    • The present invention is to provide an electron-beam lithography method and an electron-beam lithography apparatus that can draw patterns with a high precision despite a change in barometric pressure, can ensure a satisfactory throughput, and are inexpensive. In the electron-beam lithography method that uses an electron beam to draw patterns on a sample, a difference between a current measured barometric pressure and a previous measured barometric pressure, and an elapsed time between their barometric pressure-measurement points in time are determined. When the rate of the difference of their barometric pressures with respect to the elapsed time is equal to or larger than a prescribed barometric pressure change rate value, a drawing precision is calibrated.
    • 本发明是提供一种电子束光刻方法和电子束光刻设备,尽管大气压力发生变化,但能够高精度地绘制图案,可以确保令人满意的生产量,并且便宜。 在使用电子束在样品上绘制图案的电子束光刻方法中,确定当前测量的大气压力与先前测量的大气压力之间的差异以及它们在大气压力测量点之间的经过时间。 当大气压力相对于经过时间的差异的比率等于或大于规定的气压变化率值时,校准绘制精度。
    • 100. 发明申请
    • Pattern writing method capable of preventing or reducing an error between design dimensions and finished dimensions of a pattern
    • 图案写入方法能够防止或减少图案的设计尺寸和成品尺寸之间的误差
    • US20040153989A1
    • 2004-08-05
    • US10430292
    • 2003-05-07
    • Renesas Technology Corp.
    • Koji Tange
    • G06F017/50
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/31793
    • When a unit figure (F1) is divided by a provisional stripe boundary (C12) into a first portion (F11) and a second portion (F12), and besides, when width (W1) of the first portion (F11) is smaller than a predetermined threshold value (0.40 nullm), the provisional stripe boundary (C12) is partly shifted in a position where the unit figure (F1) is described such that the first portion (F11) belongs to a provisional stripe region (R2). That is, provisional stripe regions (R1, R2) are corrected to obtain formal stripe regions (R1a, R2a). As a result, the unit figure (F1) belongs to the formal stripe region (R2a) as a whole. The writing section 3 then writes a pattern on a target of writing (6) based on pattern data (D2) in which the formal stripe regions (R1a, R2a) are defined.
    • 当单位图形(F1)被临时条形边界(C12)划分成第一部分(F11)和第二部分(F12)时,此外,当第一部分(F11)的宽度(W1)小于 预定阈值(0.40μm),临时条纹边界(C12)在描述单位图形(F1)的位置部分移位,使得第一部分(F11)属于临时条纹区域(R2)。 也就是说,修正临时条带区域(R1,R2)以获得正式条带区域(R1a,R2a)。 结果,单位图(F1)作为整体属于正式条带区域(R2a)。 写入部分3然后基于其中定义了形式条带区域(R1a,R2a)的图案数据(D2)将图案写入到写入目标(6)上。