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    • 96. 发明专利
    • Memory array comprising individual test inputs per memory cell and output buffers
    • GB2507001A
    • 2014-04-16
    • GB201317927
    • 2013-10-10
    • DOLPHIN INTEGRATION SA
    • SEVER ILAN
    • G11C11/412G11C29/12G11C29/48H01L27/11
    • A memory array (100 fig 1) and method of use, the memory array comprising memory cells (102, figure 1) arranged in columns (COL0-COL3, fig 1) and rows (ROW0-R0W1, fig 1), the memory cells of each column being coupled to at least one common write line (WR0,WR1, figure 1) of their column, the memory cells of each row being coupled to a common selection line (SEL0-SEL1, fig 1) of their row, wherein each of the memory cells includes a latch (102, 302 fig 2,4) formed of a pair of inverters 402, 403 cross-coupled between first and second storage nodes 206, 208; a first transistor 404 (scan transistor) coupled between the first storage node and a first test data input 406; and a second transistor 408 (scan transistor) coupled between the second storage node and a second test data input 410. Each memory cell may comprise of an output Dout preferably independently connected to one or more output ports (105A, 105B fig 1) by means of buffers 220, 218. The gate of first and second transistors 404, 408 may be controlled by complimentary clock scanning signals allowing a single ended or differential chain scan operation of the memory array (fig 3). The invention provides for increased writing (programming), reading speeds and also fast global array resets.