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    • 91. 发明申请
    • FORMING FACET-LESS EPITAXY WITH SELF-ALIGNED ISOLATION
    • 具有自对准隔离的成形面较小的外观
    • US20140027820A1
    • 2014-01-30
    • US13556406
    • 2012-07-24
    • Michael V. AquilinoByeong Yeol KimYing LiCarl John Radens
    • Michael V. AquilinoByeong Yeol KimYing LiCarl John Radens
    • H01L21/336H01L29/78
    • H01L21/76232H01L29/66628H01L29/66636
    • A method of forming a semiconductor structure may include preparing a continuous active layer in a region of the substrate and forming a plurality of adjacent gates on the continuous active layer. A first raised epitaxial layer may be deposited on a recessed region of the continuous active layer between a first and a second one of the plurality of gates, whereby the first and second gates are adjacent. A second raised epitaxial layer may be deposited on another recessed region of the continuous active layer between the second and a third one of the plurality of gates, whereby the second and third gates are adjacent. Using a cut mask, a trench structure is etched into the second gate structure and a region underneath the second gate in the continuous active layer. The trench is filled with isolation material for electrically isolating the first and second raised epitaxial layers.
    • 形成半导体结构的方法可以包括在衬底的区域中制备连续有源层,并在连续有源层上形成多个相邻栅极。 第一凸起的外延层可以沉积在多个栅极中的第一和第二栅极之间的连续有源层的凹陷区域上,由此第一和第二栅极相邻。 第二凸起的外延层可以沉积在多个栅极中的第二和第三栅极之间的连续有源层的另一个凹陷区域上,由此第二和第三栅极相邻。 使用切割掩模,沟槽结构被蚀刻到第二栅极结构中以及连续有源层中的第二栅极下方的区域。 沟槽填充有用于电隔离第一和第二凸起外延层的隔离材料。
    • 96. 发明申请
    • METHOD AND DEVICE TO IDENTIFY MOTION VECTOR CANDIDATES USING A SCALED MOTION SEARCH
    • 使用规模运动搜索识别运动矢量候选的方法和装置
    • US20130251024A1
    • 2013-09-26
    • US13425522
    • 2012-03-21
    • Ying LiXu Gang Zhao
    • Ying LiXu Gang Zhao
    • H04N7/26
    • H04N19/53H04N19/56
    • A scaled motion search section can be used in a video processing device that processes a video input signal that includes a plurality of pictures. The scaled motion search section includes a downscaling module that downscales the plurality of pictures to generate a plurality of downscaled pictures, wherein the downscaling module includes a horizontal downscaling filter and a vertical downscaling filter, and wherein the vertical downscaling filter generates downscaled pixels for a macroblock pair using only pixels from the macroblock pair. A transfer function that models the scaled motion vectors is determined and used to identify a final set of motion vector candidates used in a larger scale motion search.
    • 缩放运动搜索部分可以用于处理包括多个图像的视频输入信号的视频处理装置。 缩放运动搜索部分包括缩小模块,其缩小多个图片以生成多个缩小的图片,其中缩小模块包括水平缩小滤镜和垂直缩小滤镜,并且其中垂直缩小滤镜产生宏块的缩小像素 只使用来自宏块对的像素。 确定用于对缩放的运动矢量建模的传递函数,并用于识别在较大比例运动搜索中使用的运动矢量候选的最终集合。
    • 97. 发明授权
    • Self-aligned contacts for high k/metal gate process flow
    • 用于高k /金属栅极工艺流程的自对准触点
    • US08536656B2
    • 2013-09-17
    • US12987221
    • 2011-01-10
    • Ravikumar RamachandranRamachandra DivakaruniYing Li
    • Ravikumar RamachandranRamachandra DivakaruniYing Li
    • H01L21/70
    • H01L29/401H01L21/76895H01L21/76897H01L29/49H01L29/4983H01L29/51H01L29/66545H01L29/6656
    • A semiconductor structure is provided that includes a semiconductor substrate having a plurality of gate stacks located on a surface of the semiconductor substrate. Each gate stack includes, from bottom to top, a high k gate dielectric layer, a work function metal layer and a conductive metal. A spacer is located on sidewalls of each gate stack and a self-aligned dielectric liner is present on an upper surface of each spacer. A bottom surface of each self-aligned dielectric liner is present on an upper surface of a semiconductor metal alloy. A contact metal is located between neighboring gate stacks and is separated from each gate stack by the self-aligned dielectric liner. The structure also includes another contact metal having a portion that is located on and in direct contact with an upper surface of the contact metal and another portion that is located on and in direct contact with the conductive metal of one of the gate stacks. Methods of forming the semiconductor structure using a replacement gate and a non-replacement gate scheme are also disclosed.
    • 提供一种半导体结构,其包括具有位于半导体衬底的表面上的多个栅极叠层的半导体衬底。 每个栅极堆叠包括从底部到顶部的高k栅极电介质层,功函数金属层和导电金属。 间隔件位于每个栅极堆叠的侧壁上,并且自对准电介质衬垫存在于每个间隔件的上表面上。 每个自对准电介质衬垫的底表面存在于半导体金属合金的上表面上。 接触金属位于相邻的栅极堆叠之间,并通过自对准电介质衬垫与每个栅极堆叠分离。 该结构还包括另一个接触金属,其具有位于接触金属的上表面上且与触头金属的上表面直接接触的部分,以及位于与其中一个栅极叠层的导电金属直接接触的另一部分。 还公开了使用替换栅极和非替代栅极方案形成半导体结构的方法。
    • 100. 发明授权
    • Method and apparatus for locating memory leak in a program
    • 用于定位程序中的内存泄漏的方法和装置
    • US08479162B2
    • 2013-07-02
    • US12511122
    • 2009-07-29
    • Ying LiTian Cheng LiuQuan LongJing LuoCheng Wei Wang
    • Ying LiTian Cheng LiuQuan LongJing LuoCheng Wei Wang
    • G06F9/44
    • G06F11/3604
    • A method and apparatus for locating a memory leak in a program code by a computer device using a combination of dynamic analysis and static analysis approaches. The method includes dynamically analyzing the program to determine a memory leak characteristic; filtering out items which do not match the determined memory leak characteristic of the program to reduce a static analysis range to certain suspicious parts of a source code; and statically analyzing the suspicious parts of the program to locate the memory leak in the program. The apparatus includes a dynamic analyzer device to determine memory leak characteristics; and a static analyzer device to filter out items which do not match the determined memory leak characteristic to reduce a static analysis range to certain suspicious parts of a source code and locate the memory leak in the program.
    • 一种用于通过计算机设备使用动态分析和静态分析方法的组合来定位程序代码中的存储器泄漏的方法和装置。 该方法包括动态分析程序以确定存储器泄漏特性; 过滤掉与确定的程序的内存泄漏特性不匹配的项目,以将静态分析范围减少到源代码的某些可疑部分; 并静态分析程序的可疑部分,以定位程序中的内存泄漏。 该装置包括用于确定存储器泄漏特性的动态分析器装置; 以及静态分析器装置,用于过滤出与确定的存储器泄漏特性不匹配的项目,以将静态分析范围减少到源代码的某些可疑部分,并将程序中的存储器泄漏定位。