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91. 发明授权

US08518165B2 Dry exhaust-gas treating apparatus 有权
标题翻译：干式废气处理装置
公开(公告)号：US08518165B2
公开(公告)日：2013-08-27
申请号：US13255078
申请日：2009-03-16
申请人： Kuninori Furuyama , Masahiro Miya , Ryo Suzuki
发明人： Kuninori Furuyama , Masahiro Miya , Ryo Suzuki
IPC分类号： B01D53/02
CPC分类号： B01D53/08 , B01D53/508 , B01D53/565 , B01D53/83 , B01D2251/2062 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2257/302 , B01D2257/404 , B01D2259/4009 , B01D2259/401 , B01D2259/402
摘要： An exhaust-gas treating apparatus, which includes an adsorption tower for removing various harmful substances in an exhaust gas using an adsorbent, a regeneration tower for releasing adsorbed substances from the adsorbent, a first transfer passage for transferring the adsorbent from the adsorption tower to the regeneration tower, a second transfer passage for transferring the adsorbent from the regeneration tower to the adsorption tower, a lock hopper connected to one end of the regeneration tower on a higher differential pressure side of a first differential pressure between an inside of the regeneration tower and an inside of the first transfer passage and a second differential pressure between the inside of the regeneration tower and an inside of the second transfer passage to thereby secure gas-tightness, a sealing unit connected to the other end of the regeneration tower on a lower differential pressure side to thereby secure gas-tightness, and an adjusting unit for maintaining the differential pressure in the sealing unit within a fixed range.
摘要翻译：一种废气处理装置，其包括使用吸附剂除去废气中的各种有害物质的吸附塔，用于从吸附剂中排出吸附物质的再生塔，将吸附剂从吸附塔转移到第一输送通道再生塔，用于将吸附剂从再生塔转移到吸附塔的第二输送通道，在再生塔的内部与再生塔的内部之间的第一差压的较高压差侧连接到再生塔的一端的闭锁料斗第一输送通道的内部和再生塔的内部与第二输送通道的内部之间的第二差压，从而确保气密性;密封单元，连接到再生塔的另一端，位于下部差速器从而确保气密性，以及用于保持气密性的调节单元密封单元中的压差在一定范围内。

92. 发明申请

US20120286668A1 LED LIGHTING SYSTEM, LED LAMP, AND ILLUMINATION SYSTEM FOR LED 有权
标题翻译： LED照明系统，LED灯和LED照明系统
公开(公告)号：US20120286668A1
公开(公告)日：2012-11-15
申请号：US13518894
申请日：2010-12-13
申请人： Kazuyoshi Kondo , Ryosuke Matsui , Terutaka Muramatsu , Takashi Noguchi , Ryo Suzuki
发明人： Kazuyoshi Kondo , Ryosuke Matsui , Terutaka Muramatsu , Takashi Noguchi , Ryo Suzuki
IPC分类号： H05B37/00
CPC分类号： H05B33/089 , F21K9/27 , F21Y2103/10 , F21Y2115/10 , Y02B20/341 , Y02B20/386
摘要： The object of the present invention is to provide a LED illumination system which does not cause heat generation and damage, even when a straight-tube fluorescent lamp is mistakenly fitted into a straight-tube fluorescent lamp luminaire in which the fluorescent lamp ballast has been replaced with a LED lighting device.The LED illumination system according to the present invention is configurated in such a manner that the LED lighting device is installed in an existing straight-tube fluorescent lamp luminaire, and the LED lamp is connected to the existing sockets. The characteristic of the output from the LED lighting device connected to either inter-terminal section A on the ends of the LED lamp is to be different from that of an existing fluorescent lamp lighting device. The LED lamp is provided with lighting device output detection means for detecting the output from the LED lighting device and also with protection means for cutting off the input to the LED lamp when the output detected by the lighting device output detection means is outside of a predetermined range.
摘要翻译：本发明的目的是提供一种即使当直管式荧光灯被错误地装配到已经更换了荧光灯镇流器的直管式荧光灯灯具中时也不引起发热和损坏的LED照明系统配有LED照明装置。根据本发明的LED照明系统被配置为使得LED照明装置安装在现有的直管荧光灯灯具中，并且LED灯连接到现有的插座。连接到LED灯两端的端子间部分A的LED照明装置的输出的特性与现有荧光灯照明装置的输出特性不同。 LED灯具有用于检测来自LED照明装置的输出的照明装置输出检测装置，并且还具有用于当由照明装置输出检测装置检测到的输出超出预定值时切断对LED灯的输入的保护装置范围。

93. 发明申请

US20120216409A1 ELECTRIC SHAVER 审中-公开
标题翻译：电动剃须刀
公开(公告)号：US20120216409A1
公开(公告)日：2012-08-30
申请号：US13358459
申请日：2012-01-25
申请人： Hiroshi Shigeta , Kotaro Yanagi , Ryo Suzuki
发明人： Hiroshi Shigeta , Kotaro Yanagi , Ryo Suzuki
IPC分类号： B26B19/28 , B26B19/02
CPC分类号： B26B19/288
摘要： An electric shaver includes a head, outer blades located next to one another in an arrangement that extends in a front to back direction of the head, a drive source that drives a first drive element and a second drive element back and forth in different directions, and inner blades each coupled to and driven by the first drive element or the second drive element to be movable back and forth in a longitudinal direction of the outer blades, which is a widthwise direction of the head, at an inner side of the outer blades. The inner blades are coupled to the first drive element and the second drive element at a ratio of two to three.
摘要翻译：一种电动剃须刀，包括头部，沿着头部的前后方向延伸的布置的彼此相邻的外部刀片;驱动源，其以不同的方向来回驱动第一驱动元件和第二驱动元件; 以及每个与所述第一驱动元件或所述第二驱动元件连接并由所述第一驱动元件或所述第二驱动元件驱动的内部叶片，所述内部叶片能够在所述外部叶片的内侧沿着作为所述头部的宽度方向的所述外部叶片的纵向方向前后移动。内刀片以两比三的比例联接到第一驱动元件和第二驱动元件。

94. 发明授权

US08241438B2 Hafnium alloy target 有权
标题翻译：铪合金靶
公开(公告)号：US08241438B2
公开(公告)日：2012-08-14
申请号：US12259391
申请日：2008-10-28
申请人： Takeo Okabe , Shuichi Irumata , Yasuhiro Yamakoshi , Hirohito Miyashita , Ryo Suzuki
发明人： Takeo Okabe , Shuichi Irumata , Yasuhiro Yamakoshi , Hirohito Miyashita , Ryo Suzuki
IPC分类号： C22C14/00
CPC分类号： C22C27/00 , C23C14/3414 , H01L21/31645 , Y10S148/158
摘要： A hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译：在Hf中，含有总量为100重量ppm-10重量％的Zr和Ti中的任一种或两者的铪合金靶，其中平均晶粒尺寸为1-100μm，Fe，Cr和Ni的杂质分别为1重量ppm 以下，与{002}相距在35°以内的平面{002}和三个平面{103}，{014}和{015}的习惯平面比为55％以上，根据位置的这四个平面的强度比为20％以下。结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。

95. 发明申请

US20120187409A1 Hybrid Silicon Wafer 有权
标题翻译：混合硅晶片
公开(公告)号：US20120187409A1
公开(公告)日：2012-07-26
申请号：US13498992
申请日：2010-10-28
申请人： Ryo Suzuki , Hiroshi Takamura
发明人： Ryo Suzuki , Hiroshi Takamura
IPC分类号： H01L29/38
CPC分类号： C30B29/06 , C30B29/605 , H01L21/02532 , H01L21/02595 , H01L21/02598 , H01L21/02667
摘要： A hybrid silicon wafer which is a silicon wafer having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is prepared by the unidirectional solidification/melting method. The longitudinal plane of crystal grains of the polycrystalline portion prepared by the unidirectional solidification/melting method is used as the wafer plane, and the monocrystalline silicon is embedded so that the longitudinal direction of the crystal grains of the polycrystalline portion forms an angle of 120° to 150° relative to the cleaved surface of the monocrystalline silicon. Thus provided is a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a monocrystalline wafer.
摘要翻译：作为硅晶片的混合硅晶片，其具有通过单向凝固/熔融法制备的单晶硅嵌入到多晶硅中的结构。使用通过单向凝固/熔融法制备的多晶部分的晶粒的纵向平面用作晶片平面，并且嵌入单晶硅，使得多晶部分的晶粒的纵向方向形成120°的角度至150°相对于单晶硅的切割表面。因此提供了包括多晶硅晶片和单晶晶片的功能的混合硅晶片。

96. 发明申请

US20120181536A1 Hybrid Silicon Wafer 有权
标题翻译：混合硅晶片
公开(公告)号：US20120181536A1
公开(公告)日：2012-07-19
申请号：US13499304
申请日：2010-10-28
申请人： Ryo Suzuki , Hiroshi Takamura
发明人： Ryo Suzuki , Hiroshi Takamura
IPC分类号： H01L29/04
CPC分类号： C30B29/06 , C30B11/00 , C30B28/06 , C30B33/06
摘要： A hybrid silicon wafer which is a silicon wafer having a structure wherein the main plane orientation of polycrystalline silicon that is prepared by a unidirectional solidification/melting method is (311), and monocrystalline silicon is embedded in the polycrystalline silicon. The hybrid silicon wafer according to any one of claims 1 to 6, wherein the purity of the polycrystalline silicon portion excluding gas components is 6N or higher, the total amount of metal impurities is 1 wtppm or less, and, among the metal impurities, Cu, Fe, Ni, and Al are respectively 0.1 wtppm or less. Thus, a hybrid silicon wafer having the functions of both a polycrystalline silicon wafer and a monocrystalline silicon wafer is provided and the occurrence of polish bumps and macro-sized unevenness between the polycrystalline silicon and the monocrystalline silicon are prevented.
摘要翻译：具有以下结构的硅晶片的混合硅晶片，其中通过单向凝固/熔融法制备的多晶硅的主平面取向为（311），单晶硅嵌入多晶硅中。 7.根据权利要求1〜6中任一项所述的复合硅晶片，其特征在于，除了气体成分以外的多晶硅部分的纯度为6N以上，金属杂质的总量为1重量ppm以下，在金属杂质中，Cu ，Fe，Ni，Al分别为0.1重量ppm以下。因此，提供了具有多晶硅晶片和单晶硅晶片的功能的混合硅晶片，并且防止了多晶硅和单晶硅之间的抛光凸起和宏观尺寸的不均匀性的出现。

97. 发明授权

US08222417B2 Compound having 11β-HSD1 inhibitory activity 失效
标题翻译：具有11＆bgr-HSD1抑制活性的化合物
公开(公告)号：US08222417B2
公开(公告)日：2012-07-17
申请号：US12666802
申请日：2008-06-24
申请人： Ryo Suzuki , Ayako Mikami , Hiroaki Tanaka , Hiroshi Fukushima
发明人： Ryo Suzuki , Ayako Mikami , Hiroaki Tanaka , Hiroshi Fukushima
IPC分类号： C07D215/38 , A61K31/04
CPC分类号： C07D209/08 , C07D215/08 , C07D215/18 , C07D215/20 , C07D215/48 , C07D223/16 , C07D241/40 , C07D265/36 , C07D279/16
摘要： The present invention provides compounds having excellent 11β-HSD1 inhibitory activity.A compound represented by the following formula (I): [wherein X1 represents an oxygen atom, or the formula —(CR11R12)p—, etc., Y1 represents a hydrogen atom, a hydroxyl group, etc., Z1 represents an oxygen atom or the formula —(NR14)—, R1 represents a hydrogen atom, a halogen atom, a cyano group, a C1-4 alkyl group, a C1-4 alkyl group substituted with 1 to 3 halogen atoms, a C1-4 alkoxy group, a C1-4 alkoxycarbonyl group, a carboxyl group, a carbamoyl group, or an amino group, and m represents an integer of 1 or 2, and R2 represents a hydrogen atom or a C1-4 alkyl group, and n represents an integer of 1 or 2].
摘要翻译：本发明提供具有优异的11＆amp; b -HSD1抑制活性的化合物。由下式（I）表示的化合物：[其中X1表示氧原子，或式 - （CR11R12）p-等，Y1表示氢原子，羟基等，Z1表示氧原子或式 - （NR14） - ，R1表示氢原子，卤素原子，氰基，C1-4烷基，被1〜3个卤素原子取代的C1-4烷基，C1-4烷氧基，C 1-4烷氧基羰基，羧基，氨基甲酰基或氨基，m表示1或2的整数，R 2表示氢原子或C 1-4烷基，n表示整数 1或2]。

98. 发明授权

US08173093B2 Iron silicide sputtering target and method for production thereof 有权
标题翻译：铁硅化物溅射靶及其制造方法
公开(公告)号：US08173093B2
公开(公告)日：2012-05-08
申请号：US10527320
申请日：2003-09-01
申请人： Kunihiro Oda , Ryo Suzuki
发明人： Kunihiro Oda , Ryo Suzuki
IPC分类号： B22F1/00 , B22F1/02 , C22C1/04 , C22C29/12 , H01F1/00 , C01B21/068 , C01B33/06 , H01L21/44
CPC分类号： C04B35/64 , B22F2998/00 , B22F2998/10 , C04B35/58085 , C04B35/6261 , C04B35/62665 , C04B35/645 , C04B35/6455 , C04B2235/3891 , C04B2235/405 , C04B2235/428 , C04B2235/5436 , C04B2235/6581 , C04B2235/6582 , C04B2235/661 , C04B2235/666 , C04B2235/72 , C04B2235/721 , C04B2235/722 , C04B2235/723 , C04B2235/724 , C04B2235/726 , C04B2235/727 , C04B2235/77 , C04B2235/78 , C04B2235/786 , C23C14/3414 , B22F3/105 , B22F3/14 , B22F3/15 , B22F9/082 , B22F3/10
摘要： Provided is an iron silicide sputtering target in which the oxygen as the gas component in the target is 1000 ppm or less, and a manufacturing method of such iron silicide sputtering target including the steps of melting/casting high purity iron and silicon under high vacuum to prepare an alloy ingot, subjecting the ingot to gas atomization with inert gas to prepare fine powder, and thereafter sintering the fine powder. With this iron silicide sputtering target, the amount of impurities will be reduced, the thickness of the βFeSi2 film during deposition can be made thick, the generation of particles will be reduced, a uniform and homogenous film composition can be yielded, and the sputtering characteristics will be favorable. The foregoing manufacturing method is able to stably produce this target.
摘要翻译：提供了一种铁化硅溅射靶，其中作为靶中的气体成分的氧为1000ppm以下，以及这种铁硅化物溅射靶的制造方法，其包括在高真空下熔融/铸造高纯度铁和硅的步骤制备合金锭，使该锭用惰性气体进行气体雾化以制备细粉末，然后烧结该细粉末。利用该铁硅化物溅射靶，杂质量减少，沉积期间的FeSi2膜的厚度可以变厚，粒子的产生将减少，可以产生均匀且均匀的膜组成，并且溅射特性将是有利的。上述制造方法能够稳定地产生该目标。

99. 发明授权

US08158092B2 Iron silicide powder and method for production thereof 有权
标题翻译：硅化铁粉末及其制造方法
公开(公告)号：US08158092B2
公开(公告)日：2012-04-17
申请号：US12775635
申请日：2010-05-07
申请人： Kunihiro Oda , Ryo Suzuki
发明人： Kunihiro Oda , Ryo Suzuki
IPC分类号： B22F1/00 , B22F1/02 , C22C1/04 , C22C29/12 , H01F1/00 , C01B21/068 , C01B33/06 , H01L21/44
CPC分类号： C01B33/06 , C23C14/3414
摘要： Provided is iron silicide powder in which the content of oxygen as the gas component is 1500 ppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.
摘要翻译：本发明提供了作为气体成分的氧含量为1500ppm以下的铁硅化物粉末，以及制造这种硅化铁粉末的方法，其包括用氢还原铁氧化物以制备铁粉的步骤，加热铁粉和Si 粉末在非氧化性气氛中制备含有FeSi作为其主要成分的合成粉末，再次将Si粉末再次加入并混合，并在非氧化性气氛中加热，制备含有FeSi 2作为其主要成分的铁硅化物粉末。作为硅化铁粉末中含有的气体成分的氧含量会降低，因此可以容易地粉碎硅化铁粉末。因此，当粉碎不令人满意时，杂质的混合物将被降低，硅化铁粉末的比表面积将增加，并且在烧结硅化铁粉末时可以提高密度。

100. 发明申请

US20120009373A1 Hybrid Silicon Wafer and Method of Producing the Same 有权
标题翻译：混合硅晶片及其制造方法
公开(公告)号：US20120009373A1
公开(公告)日：2012-01-12
申请号：US12832120
申请日：2010-07-08
申请人： Hiroshi Takamura , Ryo Suzuki
发明人： Hiroshi Takamura , Ryo Suzuki
IPC分类号： B32B7/02 , B29C37/00 , B32B3/02
CPC分类号： C30B29/06 , C30B33/06 , Y10T428/21 , Y10T428/24942
摘要： Provided is a hybrid silicon wafer made of a wafer comprised primarily of two or more types of concentric single-crystal silicon or polycrystalline silicon prepared by mutually integrating one in a molten state and another in a solid state, and having specific resistances that differ by two orders of magnitude or more. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein high specific resistance silicon or an ingot comprised primarily of silicon is disposed at a central portion or a decentered position in a crucible, a nugget or powdered silicon having a specific resistance that is lower by two orders of magnitude or more than the ingot is filled in a void part around the ingot in the crucible, the nugget or powdered silicon is selectively melted and integrated with the ingot to form a complex, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer, or two or more polycrystalline silicon wafers having different functions.
摘要翻译：提供了由主要由两种或更多种类型的同心单晶硅或多晶硅组成的晶片制成的混合硅晶片，其通过将熔融状态中的一种以固态相互一体化的方式相互一体化，并且具有两个不同的电阻数量级以上。另外提供了一种制造混合硅晶片的方法，其中高电阻率硅或主要由硅组成的晶锭设置在坩埚，熔核或粉末状硅中的中心部分或偏心位置，其具有较低的电阻率在坩埚内的锭周围的空隙部分填充两个数量级以上的块，将熔核或粉末状硅选择性地熔融并与锭结合，形成复合体，并从中切出晶片形状。所提供的混合硅晶片包括多晶硅晶片和单晶晶片的功能，或者具有不同功能的两个或多个多晶硅晶片。

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