专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20070218578A1 Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer 失效
标题翻译：具有在SOI晶片上制造的堆叠光电二极管的实时CMOS成像器
公开(公告)号：US20070218578A1
公开(公告)日：2007-09-20
申请号：US11384110
申请日：2006-03-17
申请人： Jong-Jan Lee , Sheng Hsu , Douglas Tweet , Jer-Shen Maa
发明人： Jong-Jan Lee , Sheng Hsu , Douglas Tweet , Jer-Shen Maa
IPC分类号： H01L21/00
CPC分类号： H01L27/14647
摘要： A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the silicon substrate, for sensing light of a longest wavelength; a middle photodiode fabricated on the silicon substrate, for sensing light of a medium wavelength, which is stacked above the bottom photodiode; and a top photodiode fabricated on the top silicon layer, for sensing light of a shorter wavelength, which is stacked above the middle and bottom photodiodes. Pixel transistor sets are fabricated on the top silicon layer and are associated with each pixel sensor cell by electrical connections which extend between each of the photodiodes and respective pixel transistor(s). CMOS control circuitry is fabricated adjacent to an array of active pixel sensor cells and electrically connected thereto.
摘要翻译： CMOS有源像素传感器包括具有在其上形成有绝缘体层的硅衬底和形成在绝缘体层上的顶部硅层的绝缘体上硅衬底。层叠像素传感器单元包括：制造在硅衬底上的底部光电二极管，用于感测最长波长的光; 制造在硅衬底上的中间光电二极管，用于感测中等波长的光; 和制造在顶部硅层上的顶部光电二极管，用于感测较短波长的光，该光被层叠在中间和底部光电二极管的上方。像素晶体管组被制造在顶部硅层上，并且通过在每个光电二极管和相应的像素晶体管之间延伸的电连接与每个像素传感器单元相关联。 CMOS控制电路与有源像素传感器单元的阵列相邻并且与其电连接。

92. 发明申请

US20070190681A1 Silicon-on-insulator near infrared active pixel sensor array 审中-公开
标题翻译：绝缘体上的近红外有源像素传感器阵列
公开(公告)号：US20070190681A1
公开(公告)日：2007-08-16
申请号：US11352724
申请日：2006-02-13
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Sheng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Sheng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L27/14649 , H01L27/14609 , H01L27/14689
摘要： A method is provided for forming a near infrared (NIR) active pixel sensor array on a silicon-on-insulator (SOI) substrate. The method forms a first wafer comprising a high resistance first Si substrate and a moderately doped first Si layer, and forms a second wafer comprising a first silicon oxide layer and a second Si layer. The method bonds the first wafer to the second wafer, forming a SOI substrate. Then, a diode is formed with a p-n junction space charge region extending into the first Si substrate. A thin-film transistor (TFT) is formed in the second Si layer, and interconnects are formed between the TFT and the diode. For example, first Si substrate may have a resistivity of greater than 100 ohm-cm, and the first Si layer may have a dopant concentration in the range of about 1×1016 to about 5×1018 cm−3.
摘要翻译：提供了一种用于在绝缘体上硅（SOI）衬底上形成近红外（NIR）有源像素传感器阵列的方法。该方法形成包括高电阻第一Si衬底和中度掺杂的第一Si层的第一晶片，并且形成包括第一氧化硅层和第二Si层的第二晶片。该方法将第一晶片连接到第二晶片，形成SOI衬底。然后，形成具有延伸到第一Si衬底中的p-n结空间电荷区域的二极管。在第二Si层中形成薄膜晶体管（TFT），并且在TFT和二极管之间形成互连。例如，第一Si衬底可以具有大于100欧姆 - 厘米的电阻率，并且第一Si层可以具有在约1×10 16至约5×10 18范围内的掺杂剂浓度， / SUP> cm 3 -3。

93. 发明申请

US20070099329A1 Method of fabricating a germanium photo detector on a high quality germanium epitaxial overgrowth layer 有权
标题翻译：在高质量锗外延生长层上制造锗光电探测器的方法
公开(公告)号：US20070099329A1
公开(公告)日：2007-05-03
申请号：US11260955
申请日：2005-10-27
申请人： Jer-Shen Maa , Jong-Jan Lee , Sheng Hsu , Douglas Tweet
发明人： Jer-Shen Maa , Jong-Jan Lee , Sheng Hsu , Douglas Tweet
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L21/02532 , H01L21/02576 , H01L21/02647 , H01L31/105 , Y02E10/50
摘要： A method of fabricating a germanium photo detector includes preparing a silicon substrate; depositing and planarizing a silicon oxide layer; forming contact holes in the silicon oxide layer which communicate with the underlying silicon substrate; growing an epitaxial germanium layer of a first type on the silicon oxide layer and in the contact holes; growing an intrinsic germanium layer on the epitaxial germanium layer and any exposed silicon oxide layer; growing a germanium layer of a second type on the intrinsic germanium layer and any exposed silicon oxide layer; depositing a layer of covering material take from the group of materials consisting of polysilicon, polysilicon-germanium and In2O3—SnO2; and etching the covering material to form individual sensing elements.
摘要翻译：制造锗光电检测器的方法包括制备硅衬底; 沉积和平坦化氧化硅层; 在氧化硅层中形成与底层硅衬底连通的接触孔; 在氧化硅层和接触孔中生长第一类型的外延锗层; 在外延锗层和任何暴露的氧化硅层上生长内在的锗层; 在内部锗层和任何暴露的氧化硅层上生长第二类型的锗层; 沉积一层覆盖材料取自由多晶硅，多晶硅 - 锗和In 2 N 3 O 3 -SnO 2 2组成的材料组。并蚀刻覆盖材料以形成单独的感测元件。

94. 发明申请

US20060194357A1 High-density germanium-on-insulator photodiode array 有权
标题翻译：高密度锗绝缘体上的光电二极管阵列
公开(公告)号：US20060194357A1
公开(公告)日：2006-08-31
申请号：US11240969
申请日：2005-09-30
申请人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
发明人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L31/1126 , C30B19/00 , C30B29/08 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02623 , H01L21/02639 , H01L21/30625 , H01L21/7624 , H01L27/14683 , H01L27/14689 , H01L29/16 , H01L29/78 , H01L31/105 , H01L31/1804 , H01L31/1808 , Y02E10/547
摘要： A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a first source/drain (S/D) region, and a second S/D region connected to Vdd; forming a P-I-N Ge diode for each pixel as follows: forming a n+ region; forming an intrinsic Ge region overlying the n+ region; forming a p+ junction in the intrinsic Ge; and, isolating the P-I-N Ge diodes; and, forming an Indium Tin oxide (ITO) column in a second orientation, about orthogonal to the first orientation, overlying the P-I-N Ge diodes.
摘要翻译：提供了高密度锗（Ge）绝缘体（GOI）光电二极管阵列和相应的制造方法。该方法包括：形成像素驱动器nMOST器件的阵列，每个器件具有以第一取向连接到行线的栅极，第一源极/漏极（S / D）区域和连接到Vdd的第二S / D区域 ; 如下形成每个像素的P-I-N Ge二极管：形成n +区; 形成覆盖n +区域的本征Ge区域; 在本征Ge中形成p +结; 并隔离P-I-N Ge二极管; 并且以与第一取向正交的第二取向形成铟锡氧化物（ITO）柱，覆盖P-I-N Ge二极管。

95. 发明申请

US20060110844A1 Fabrication of thin film germanium infrared sensor by bonding to silicon wafer 有权
标题翻译：通过粘合到硅晶片制造薄膜锗红外传感器
公开(公告)号：US20060110844A1
公开(公告)日：2006-05-25
申请号：US10993533
申请日：2004-11-19
申请人： Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu , Douglas Tweet
发明人： Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu , Douglas Tweet
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L21/187 , H01L21/76254 , H01L27/1443 , H01L31/02327 , H01L31/105 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a thin film germanium photodetector includes preparing a silicon substrate; fabricating a CMOS device on the silicon substrate; preparing a germanium substrate; preparing surfaces of each substrate for bonding; bonding the germanium substrate to the CMOS-bearing silicon substrate to form a bonded structure; removing a portion of the germanium substrate from the bonded structure; forming a PIN diode in the germanium substrate; removing a portion of the germanium layer by etching; and completing the germanium photo detector.
摘要翻译：制造薄膜锗光电探测器的方法包括制备硅衬底; 在硅衬底上制造CMOS器件; 制备锗衬底; 准备每个基板的表面以进行接合; 将锗衬底结合到具有CMOS的硅衬底以形成结合结构; 从结合结构去除锗衬底的一部分; 在锗衬底中形成PIN二极管; 通过蚀刻去除锗层的一部分; 并完成锗光电检测器。

96. 发明申请

US20060051960A1 Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen 失效
标题翻译：使用硅与硼或氦和氢的共同注入形成具有高Ge含量的弛豫SiGe层的方法
公开(公告)号：US20060051960A1
公开(公告)日：2006-03-09
申请号：US10936400
申请日：2004-09-07
申请人： Douglas Tweet , David Evans , Sheng Hsu , Jer-Shen Maa
发明人： Douglas Tweet , David Evans , Sheng Hsu , Jer-Shen Maa
IPC分类号： H01L21/44
CPC分类号： H01L21/02694 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L29/1054 , Y10S438/933
摘要： A method of forming a relaxed SiGe layer having a high germanium content in a semiconductor device includes preparing a silicon substrate; depositing a strained SiGe layer; implanting ions into the strained SiGe layer, wherein the ions include silicon ions and ions selected from the group of ions consisting of boron and helium, and which further includes implanting H+ ions; annealing to relax the strained SiGe layer, thereby forming a first relaxed SiGe layer; and completing the semiconductor device.
摘要翻译：在半导体器件中形成具有高锗含量的弛豫SiGe层的方法包括制备硅衬底; 沉积应变SiGe层; 将离子注入到应变SiGe层中，其中离子包括选自由硼和氦构成的离子组的硅离子和离子，并且还包括注入H +离子; 退火以使应变SiGe层松弛，从而形成第一弛豫SiGe层; 并完成半导体器件。

97. 发明申请

US20050181592A1 Low temperature anneal to reduce defects in hydrogen-implanted, relaxed SiGe layer 有权
标题翻译：低温退火以减少氢注入，弛豫SiGe层的缺陷
公开(公告)号：US20050181592A1
公开(公告)日：2005-08-18
申请号：US10780929
申请日：2004-02-17
申请人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa
发明人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa
IPC分类号： H01L21/205 , H01L21/20 , H01L21/265 , H01L21/324 , H01L21/331
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/02694 , H01L21/324 , H01L21/3247
摘要： A method of forming a SiGe layer having a relatively high Ge content includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the Ge content of the SiGe layer is equal to or greater than 10%, implanting H2+ ions through the SiGe layer into the substrate at a dose of between about 2×1014 cm−2 to 2×1016 cm−2, at an energy of between about 20 keV to 100+ keV; low temperature thermal annealing at a temperature of between about 200° C. to 400° C. for between about ten minutes and ten hours; high temperature thermal annealing the substrate and SiGe layer, to relax the SiGe layer, in an inert atmosphere at a temperature of between about 650° C. to 1000° C. for between about 30 seconds and 30 minutes; and depositing a layer of silicon-based material on the relaxed SiGe layer to a thickness of between about 5 nm to 30 nm.
摘要翻译：形成Ge含量较高的SiGe层的方法包括制备硅衬底; 将SiGe层沉积至约100nm至500nm的厚度，其中SiGe层的Ge含量等于或大于10％，注入H 2 O + SUP +离子通过SiGe层以约2×10 14 cm -2至2×10 16 cm -3的剂量进入衬底，在约20keV至100eKeV之间的能量; 在约200℃至400℃的温度下进行约10分钟至10小时的低温热退火; 在惰性气氛中，在约650℃至1000℃的温度下，在约30秒至30分钟之间，使衬底和SiGe层进行高温热退火以使SiGe层松弛; 以及在松弛的SiGe层上沉积一层硅基材料至约5nm至30nm的厚度。

98. 发明授权

US07927909B2 Germanium film optical device fabricated on a glass substrate 有权
标题翻译：在玻璃基板上制造的锗膜光学器件
公开(公告)号：US07927909B2
公开(公告)日：2011-04-19
申请号：US12434118
申请日：2009-05-01
申请人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
发明人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
IPC分类号： H01L21/00
CPC分类号： H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14689 , H01L27/1469 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/351 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes.
摘要翻译：玻璃基板上的锗（Ge）光电二极管阵列具有相应的制造方法。提供未掺杂或轻掺杂第一掺杂剂的Ge衬底。第一掺杂剂可以是n型或p型掺杂剂。 Ge衬底的第一表面适度地掺杂有第一掺杂剂并且结合到玻璃衬底顶表面。然后，Ge衬底第二表面的第一区域被第一掺杂剂重掺杂。 Ge衬底第二表面的第二区域重掺杂有与第一掺杂剂相反的电子亲和力的第二掺杂剂，形成pn结。在Ge衬底第二表面上形成层间电介质（ILD）层，并且在覆盖Ge衬底第二表面的第一和第二区域的ILD层中蚀刻接触孔。接触孔填充有金属，并且金属垫形成在接触孔上。

99. 发明申请

US20070259467A1 FABRICATION OF VERTICAL SIDEWALLS ON (110) SILICON SUBSTRATES FOR USE IN SI/SIGE PHOTODETECTORS 有权
标题翻译：用于SI / SIGE光电二极管的（110）硅基板上的垂直边的制造
公开(公告)号：US20070259467A1
公开(公告)日：2007-11-08
申请号：US11416985
申请日：2006-05-02
申请人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
发明人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L31/1812 , Y02E10/50
摘要： A method of fabricating vertical sidewalls on silicon (110) substrates for use in Si/SiGe photodetectors includes preparing a silicon (110) layer wherein the silicon (110) plane is parallel to an underlying silicon wafer surface. Masking the silicon (110) layer with mask sidewalls parallel to a silicon (111) layer plane and etching the silicon (110) layer to remove an un-masked portion thereof, leaving a patterned silicon (110) layer having vertical silicon (111) sidewalls. Removing the mask; growing SiGe-containing layers on the patterned silicon (110) layer; and fabricating a photodetector.
摘要翻译：在Si / SiGe光电探测器中使用的在硅（110）衬底上制造垂直侧壁的方法包括制备硅（110）层，其中硅（110）平面平行于下面的硅晶片表面。屏蔽具有平行于硅（111）层平面的掩模侧壁的硅（110）层并蚀刻硅（110）层以去除其未掩蔽部分，留下具有垂直硅（111）的图案化硅（110）层，侧壁取下面罩; 在图案化的硅（110）层上生长含SiGe的层; 并制造光电检测器。

100. 发明申请

US20070004067A1 Floating body germanium phototransistor with photo absorption threshold bias region 有权
标题翻译：具有光吸收阈值偏置区域的浮体锗光电晶体管
公开(公告)号：US20070004067A1
公开(公告)日：2007-01-04
申请号：US11261191
申请日：2005-10-28
申请人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
发明人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/1136
摘要： A floating body germanium (Ge) phototransistor with a photo absorption threshold bias region, and an associated fabrication process are presented. The method includes: providing a p-doped Silicon (Si) substrate; selectively forming an insulator layer overlying a first surface of the Si substrate; forming an epitaxial Ge layer overlying the insulator layer; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers; forming source/drain (S/D) regions in the Ge layer; and, forming a photo absorption threshold bias region in the Ge layer, adjacent the channel region. In one aspect, the second S/D region has a length, longer than the first S/D length. The photo absorption threshold bias region underlies the second S/D region. Alternately, the second S/D region is separated from the channel by an offset, and the photo absorption threshold bias region is the offset in the Ge layer, after a light p-doping.
摘要翻译：提出了具有光吸收阈值偏置区域的浮体锗（Ge）光电晶体管，以及相关的制造工艺。该方法包括：提供p掺杂硅（Si）衬底; 选择性地形成覆盖在所述Si衬底的第一表面上的绝缘体层; 形成覆盖绝缘体层的外延Ge层; 在Ge层中形成沟道区; 形成栅极电介质，栅电极和栅极间隔物; 在Ge层中形成源极/漏极（S / D）区域; 并且在Ge层中形成邻近沟道区的光吸收阈值偏置区域。在一个方面，第二S / D区域具有比第一S / D长度更长的长度。光吸收阈值偏置区域位于第二S / D区域的下方。或者，第二S / D区域与沟道分离偏移，光吸收阈值偏置区域是在光p掺杂之后的Ge层中的偏移。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式