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91. 发明申请

US20060046394A1 Forming a vertical transistor 有权
公开(公告)号：US20060046394A1
公开(公告)日：2006-03-02
申请号：US11256430
申请日：2005-10-20
申请人： Nirmal Ramaswamy , Gurtej Sandhu , Cem Basceri , Eric Blomiley
发明人： Nirmal Ramaswamy , Gurtej Sandhu , Cem Basceri , Eric Blomiley
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L29/66787 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L29/66553 , H01L29/66666 , H01L29/7827 , H01L29/78642
摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.

92. 发明申请

US20050028927A1 Supercritical fluid technology for cleaning processing chambers and systems 失效
标题翻译：用于清洁处理室和系统的超临界流体技术
公开(公告)号：US20050028927A1
公开(公告)日：2005-02-10
申请号：US10636028
申请日：2003-08-06
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
IPC分类号： B08B7/00 , C23C16/44 , C23F1/00 , B08B9/00
CPC分类号： C23C16/4407 , B08B7/0021
摘要： The invention includes a method of cleaning a processing chamber by introducing supercritical fluid into the processing chamber. A residue over an internal chamber surface is contacted with the supercritical fluid to remove the residue from the surface. The invention also includes a method of removing deposited material from internal surfaces of a processing system. A cleaning agent comprising carbon dioxide is provided in liquid phase or supercritical phase into at least a portion of the processing system. A material deposited on an internal surface of the processing system is contacted with the cleaning agent to solubilize at least a portion of the deposited material and the solubilized fraction is removed from the system. The invention further includes a processing system which includes a supercritical fluid source in selective fluid communication with a processing chamber configured to selectively flow supercritical fluid into the chamber during a chamber cleaning process.
摘要翻译：本发明包括通过将超临界流体引入处理室来清洁处理室的方法。内部室表面上的残余物与超临界流体接触以从表面除去残余物。本发明还包括从处理系统的内表面去除沉积材料的方法。包含二氧化碳的清洁剂在液相或超临界相中被提供到处理系统的至少一部分中。沉积在处理系统的内表面上的材料与清洁剂接触以溶解沉积材料的至少一部分，并且从体系中除去溶解的部分。本发明还包括处理系统，其包括与处理室选择性流体连通的超临界流体源，该处理室被配置为在室清洁过程期间选择性地将超临界流体流入室中。

93. 发明授权

US06852593B2 Haze-free BST films 失效
标题翻译：无雾BST薄膜
公开(公告)号：US06852593B2
公开(公告)日：2005-02-08
申请号：US10614489
申请日：2003-07-03
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
IPC分类号： C23C16/40 , C30B25/02 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242
CPC分类号： H01L21/31691 , C23C16/409 , C30B25/02 , C30B29/32 , H01L28/55
摘要： Described herein is a method for producing a haze-free (Ba, Sr)TiO3 (BST) film, and devices incorporating the same. In one embodiment, the BST film is made haze-free by depositing the film with a substantially uniform desired crystal orientation, for example, (100), preferably by forming the film by metal-organic chemical vapor deposition at a temperature greater than about 580° C. at a rate of less than about 80 Å/min, to result in a film having about 50 to 53.5 atomic percent titanium. In another embodiment, where the BST film serves as a capacitor for a DRAM memory cell, a desired {100} orientation is induced by depositing the bottom electrode over a nucleation layer of NiO, which gives the bottom electrode a preferential {100} orientation. BST is then grown over the {100} oriented bottom electrode also with a {100} orientation. A nucleation layer of materials such as Ti, Nb and Mn can also be provided over the bottom electrode and beneath the BST film to induce smooth, haze-free BST growth. Haze-free BST film can also be favored by forming the bottom electrode at high temperatures close to those used for BST deposition, and without a vacuum break between the bottom electrode and BST deposition.
摘要翻译：本文描述了一种生产无雾（Ba，Sr）TiO 3（BST）膜的方法，以及包含它的装置。在一个实施方案中，BST膜通过以基本上均匀的所需晶体取向沉积薄膜而形成为无雾状，例如（100），优选通过金属 - 有机化学气相沉积在大于约580℃的温度下形成薄膜 ℃，以小于约/分钟的速率，得到具有约50至53.5原子百分数的钛的膜。在另一个实施例中，其中BST膜用作DRAM存储单元的电容器，通过将底部电极沉积在NiO的成核层上来诱导所需的{100}取向，这使得底部电极具有优先{100}取向。然后，BST也以{100}取向生长在{100}取向的底部电极上。还可以在底部电极和BST膜下方提供诸如Ti，Nb和Mn的材料的成核层，以引起平滑无雾的BST生长。通过在接近用于BST沉积的高温下形成底部电极，并且在底部电极和BST沉积之间没有真空断裂，也可以使无色BST膜更有利。

94. 发明授权

US06682969B1 Top electrode in a strongly oxidizing environment 失效
标题翻译：顶极电极处于强氧化环境
公开(公告)号：US06682969B1
公开(公告)日：2004-01-27
申请号：US09652863
申请日：2000-08-31
申请人： Cem Basceri , Howard E. Rhodes , Gurtej Sandhu , F. Daniel Gealy , Thomas M. Graettinger
发明人： Cem Basceri , Howard E. Rhodes , Gurtej Sandhu , F. Daniel Gealy , Thomas M. Graettinger
IPC分类号： H01L2100
CPC分类号： H01L28/65 , H01L21/31637 , H01L21/31691 , H01L23/5222 , H01L27/10852 , H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.
摘要翻译：一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层和第二导电层，以便在第二导电层内捕获多个氧原子。富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积接口层。因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。

95. 发明授权

US06660535B2 Method of forming haze- free BST films 有权
公开(公告)号：US06660535B2
公开(公告)日：2003-12-09
申请号：US09971945
申请日：2001-10-04
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , C23C16/409 , C30B25/02 , C30B29/32 , H01L28/55
摘要： Described herein is a method for producing a haze-free (Ba, Sr)TiO3 (BST) film, and devices incorporating the same. In one embodiment, the BST film is made haze-free by depositing the film with a substantially uniform desired crystal orientation, for example, (100), preferably by forming the film by metal-organic chemical vapor deposition at a temperature greater than about 580° C. at a rate of less than about 80 Å/min, to result in a film having about 50 to 53.5 atomic percent titanium. In another embodiment, where the BST film serves as a capacitor for a DRAM memory cell, a desired {100} orientation is induced by depositing the bottom electrode over a nucleation layer of NiO, which gives the bottom electrode a preferential {100} orientation. BST is then grown over the {100} oriented bottom electrode also with a {100} orientation. A nucleation layer of materials such as Ti, Nb and Mn can also be provided over the bottom electrode and beneath the BST film to induce smooth, haze-free BST growth. Haze-free BST film can also be favored by forming the bottom electrode at high temperatures close to those used for BST deposition, and without a vacuum break between the bottom electrode and BST deposition.

96. 发明申请

US20060234465A1 Methods of forming materials comprising tungsten and nitrogen, and methods of forming capacitors 审中-公开
公开(公告)号：US20060234465A1
公开(公告)日：2006-10-19
申请号：US11452816
申请日：2006-06-13
申请人： Vishnu Agarwal , Gurtej Sandhu
发明人： Vishnu Agarwal , Gurtej Sandhu
IPC分类号： H01L21/44
CPC分类号： H01L28/75 , C23C16/34 , C23C16/56 , H01L21/28568 , H01L21/76856 , H01L21/76862 , H01L21/76868 , H01L21/7687 , H01L27/1085 , H01L28/55 , H01L2221/1078
摘要： In one aspect, the invention includes a method of forming a material comprising tungsten and nitrogen, comprising: a) providing a substrate; b) depositing a layer comprising tungsten and nitrogen over the substrate; and c) in a separate step from the depositing, exposing the layer comprising tungsten and nitrogen to a nitrogen-containing plasma. In another aspect, the invention includes a method of forming a capacitor, comprising: a) forming a first electrical node; b) forming a dielectric layer over the first electrical node; c) forming a second electrical node; and d) providing a layer comprising tungsten and nitrogen between the dielectric layer and one of the electrical nodes, the providing comprising; i) depositing a layer comprising tungsten and nitrogen; and ii) in a separate step from the depositing, exposing the layer comprising tungsten and nitrogen to a nitrogen-containing plasma.

97. 发明申请

US20050266624A1 Boron incorporated diffusion barrier material 有权
标题翻译：硼掺入扩散阻挡材料
公开(公告)号：US20050266624A1
公开(公告)日：2005-12-01
申请号：US11119370
申请日：2005-04-29
申请人： Vishnu Agarwal , Gurtej Sandhu
发明人： Vishnu Agarwal , Gurtej Sandhu
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L29/49
CPC分类号： H01L21/28088 , H01L21/28061 , H01L21/76841 , H01L23/53257 , H01L29/4941 , H01L29/4966 , H01L2924/0002 , H01L2924/00
摘要： A diffusion barrier layer comprising TiNxBy is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a TDMAT process including boron. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a CVD process. The diffusion barrier layer is of particular utility in conjunction with tungsten or tungsten silicide conductive layers formed by CVD.
摘要翻译：公开了一种包括TiN x B B y y的扩散阻挡层，用于保护集成晶体管中的栅极氧化物层。可以通过首先形成TiN层然后将硼掺入到TiN层中来制造扩散阻挡层。扩散阻挡层也可以通过使用包括硼的TDMAT工艺来形成TiN层的方法来制造。扩散阻挡层也可以通过使用CVD工艺形成TiN x B层Y 3层来制造。扩散阻挡层特别适用于通过CVD形成的钨或硅化钨导电层。

98. 发明申请

US20060261421A1 Boron incorporated diffusion barrier material 审中-公开
公开(公告)号：US20060261421A1
公开(公告)日：2006-11-23
申请号：US11493458
申请日：2006-07-25
申请人： Vishnu Agarwal , Gurtej Sandhu
发明人： Vishnu Agarwal , Gurtej Sandhu
IPC分类号： H01L29/94
CPC分类号： H01L21/28088 , H01L21/28061 , H01L21/76841 , H01L23/53257 , H01L29/4941 , H01L29/4966 , H01L2924/0002 , H01L2924/00
摘要： A diffusion barrier layer comprising TiNxBy is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a TDMAT process including boron. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a CVD process. The diffusion barrier layer is of particular utility in conjunction with tungsten or tungsten silicide conductive layers formed by CVD.

99. 发明申请

US20050093052A1 Structurally-stabilized capacitors and method of making of same 失效
标题翻译：结构稳定电容器及其制造方法
公开(公告)号：US20050093052A1
公开(公告)日：2005-05-05
申请号：US10973343
申请日：2004-10-27
申请人： Vishnu Agarwal , Gurtej Sandhu
发明人： Vishnu Agarwal , Gurtej Sandhu
IPC分类号： H01L21/02 , H01L21/20 , H01L21/768 , H01L21/8242 , H01L27/02 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10817 , H01L21/7682 , H01L27/0207 , H01L27/10852 , H01L28/90 , H01L28/91
摘要： Structurally-stable, tall capacitors having unique three-dimensional architectures for semiconductor devices are disclosed. The capacitors include monolithically-fabricated upright microstructures, i.e., those having large height/width (H/W) ratios, which are mechanical reinforcement against shear forces and the like, by a brace layer that transversely extends between lateral sides of at least two of the free-standing microstructures. The brace layer is formed as a microbridge type structure spanning between the upper ends of the two or more microstructures.
摘要翻译：公开了具有用于半导体器件的独特三维结构的结构稳定的高电容器。这些电容器包括单片制造的直立微结构，即具有大的高/宽（H / W）比的那些，它们是抗剪切力等的机械加强，该支撑层横向延伸在至少两个独立的微结构。支撑层形成为跨越两个或更多个微结构的上端之间的微桥型结构。

100. 发明申请

US20050031284A1 Waveguide for thermo optic device 失效
标题翻译：波导用于光电装置
公开(公告)号：US20050031284A1
公开(公告)日：2005-02-10
申请号：US10929271
申请日：2004-08-30
申请人： Guy Blalock , Howard Rhodes , Vishnu Agarwal , Gurtej Sandhu , James Foresi , Jean-Francois Viens , Dale Fried
发明人： Guy Blalock , Howard Rhodes , Vishnu Agarwal , Gurtej Sandhu , James Foresi , Jean-Francois Viens , Dale Fried
IPC分类号： G02B6/12 , G02B6/125 , G02B6/136 , G02F1/01 , G02F1/025 , G02B6/10
CPC分类号： G02F1/025 , G02B6/125 , G02B6/136 , G02B2006/12107 , G02B2006/12164 , G02F1/0147 , G02F2203/15
摘要： A waveguide and resonator are formed on a lower cladding of a thermo optic device, each having a formation height that is substantially equal. Thereafter, the formation height of the waveguide is attenuated. In this manner, the aspect ratio as between the waveguide and resonator in an area where the waveguide and resonator front or face one another decreases (in comparison to the prior art) thereby restoring the synchronicity between the waveguide and the grating and allowing higher bandwidth configurations to be used. The waveguide attenuation is achieved by photomasking and etching the waveguide after the resonator and waveguide are formed. In one embodiment the photomasking and etching is performed after deposition of the upper cladding. In another, it is performed before the deposition. Thermo optic devices, thermo optic packages and fiber optic systems having these waveguides are also taught.
摘要翻译：波导和谐振器形成在热光器件的下包层上，每个具有基本相等的形成高度。此后，波导的形成高度被衰减。以这种方式，波导和谐振器在波导和谐振器前面或彼此面对的区域（与现有技术相比）中的波导和谐振器之间的纵横比，从而恢复波导和光栅之间的同步性并允许更高的带宽配置要使用的。在形成谐振器和波导之后，通过光掩模和蚀刻波导来实现波导衰减。在一个实施例中，在沉积上部包层之后进行光掩模和蚀刻。另一方面，它是在沉积之前进行的。还教导了具有这些波导的热光器件，热光封装和光纤系统。

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