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    • 100. 发明授权
    • Thin-film magnetic field sensor
    • 薄膜磁场传感器
    • US06642714B2
    • 2003-11-04
    • US10225794
    • 2002-08-22
    • Nobukiyo KobayashiTakeshi YanoShigehiro OhnumaKiwamu ShirakawaTsuyoshi Masumoto
    • Nobukiyo KobayashiTakeshi YanoShigehiro OhnumaKiwamu ShirakawaTsuyoshi Masumoto
    • G01R3309
    • B82Y25/00G01R33/09G01R33/093Y10T428/1129
    • A thin-film magnetic field sensor is provided which includes two arms of a bridge circuit formed of a first element having a giant-magneto-resistant thin-film, and soft magnetic thin-films disposed one on either side thereof, with electrical terminals, and a second element having a giant-magneto-resistant thin-film, and conductive films disposed one on either side thereof, with electrical terminals. The electrical resistance value of the second element has sensitivity relative to the magnetic field, such that it is substantially zero when the magnetic field is small, but it changes equally to the first element due to causes other than the magnetic field. Since the output of the bridge circuit is in proportion to the difference in electrical resistance values between the first and second elements, part of a change due to causes other than the magnetic field is canceled in the output of the bridge circuit, whereby the magnetic field value can be accurately measured.
    • 提供一种薄膜磁场传感器,其包括由具有巨磁电阻薄膜的第一元件和每一侧设置有电磁端子的软磁薄膜形成的桥接电路的两个臂, 以及具有巨磁电阻薄膜的第二元件,以及具有电磁端子一侧设置在其两侧的导电膜。 第二元件的电阻值相对于磁场具有灵敏度,使得当磁场较小时其基本上为零,但是由于除了磁场之外的原因,它们等同于第一元件。 由于桥接电路的输出与第一和第二元件之间的电阻值的差异成比例,所以在桥接电路的输出中消除了由于除了磁场之外的原因引起的变化的一部分,由此磁场 值可以准确测量。