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91. 发明申请

US20120139038A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20120139038A1
公开(公告)日：2012-06-07
申请号：US13238258
申请日：2011-09-21
申请人： Kenji IMANISHI , Toshihide Kikkawa
发明人： Kenji IMANISHI , Toshihide Kikkawa
IPC分类号： H01L29/78 , H01L29/205 , H01L21/336 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/201 , H01L29/0692 , H01L29/2003 , H01L29/42376 , H01L29/66462 , H01L29/7787
摘要： A first AlGaN layer formed over a substrate, a second AlGaN layer formed over the first AlGaN layer, an electron transit layer formed over the second AlGaN layer, and an electron supply layer formed over the electron transit layer are provided. A relationship of “0≦x1
摘要翻译：提供了形成在衬底上的第一AlGaN层，形成在第一AlGaN层上的第二AlGaN层，形成在第二AlGaN层上的电子迁移层以及形成在电子迁移层上的电子供应层。当第一AlGaN层的组成由Al x Ga 1-x N N表示，并且第二AlGaN层的组成由Al x Ga 1-x 2 N表示时，找到“0＆nlE; x1

92. 发明申请

US20120091522A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120091522A1
公开(公告)日：2012-04-19
申请号：US13276521
申请日：2011-10-19
申请人： Shirou OZAKI , Masahito Kanamura , Norikazu Nakamura , Toyoo Miyajima , Masayuki Takeda , Keiji Watanabe , Toshihide Kikkawa , Kenji Imanishi , Toshihiro Ohki , Tadahiro Imada
发明人： Shirou OZAKI , Masahito Kanamura , Norikazu Nakamura , Toyoo Miyajima , Masayuki Takeda , Keiji Watanabe , Toshihide Kikkawa , Kenji Imanishi , Toshihiro Ohki , Tadahiro Imada
IPC分类号： H01L29/78 , H01L21/336 , H01L29/772
CPC分类号： H01L29/517 , H01L21/0228 , H01L23/291 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/42376 , H01L29/518 , H01L29/66462 , H01L29/7786 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition.
摘要翻译：半导体器件包括形成在衬底上的第一半导体层，形成在第一半导体层上的第二半导体层，形成在第二半导体层上的源电极和漏电极，形成在第二半导体层上的绝缘膜，栅极形成在绝缘膜上的电极，以及覆盖绝缘膜的保护膜，保护膜通过热CVD，热ALD或真空气相沉积形成。

93. 发明申请

US20110297957A1 COMPOUND SEMINCONDUCTOR STRUCTURE 审中-公开
标题翻译：化学结晶结构
公开(公告)号：US20110297957A1
公开(公告)日：2011-12-08
申请号：US13209882
申请日：2011-08-15
申请人： Toshihide Kikkawa , Kenji Imanishi
发明人： Toshihide Kikkawa , Kenji Imanishi
IPC分类号： H01L29/205
CPC分类号： H01L29/7787 , H01L21/02378 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66462
摘要： A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 52 cm to 1×105 Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×103 Ωcm to 1×105Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×105 Ωcm. The step (b) preferably includes (b-1) growing an AlInGaN layer having a thickness not thinner than 10 μm on the conductive SiC substrate by hydride VPE.
摘要翻译：一种化合物半导体结构的制造方法，包括：（a）根据颜色和电阻率选择导电性SiC基板，（b）在选择的导电性SiC基板上外延生长GaN系化合物半导体层。步骤（a）优选选择导电型为n型，电阻率为0.08×52cm〜1×105Ω·cm的导电性SiC基板，或者主色为黑色，导电性为 p型，其电导率为1×10 3Ω·OHgr·cm〜1×105＆OHgr·cm，其主要颜色为蓝色，其导电类型为p型，电阻率为10Ω·cm〜1×105Ω。步骤（b）优选包括（b-1）通过氢化物VPE在导电SiC衬底上生长厚度不小于10μm的AlInGaN层。

94. 发明授权

US07948062B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US07948062B2
公开(公告)日：2011-05-24
申请号：US12339695
申请日：2008-12-19
申请人： Kozo Makiyama , Toshihiro Ohki , Masahito Kanamura , Toshihide Kikkawa
发明人： Kozo Makiyama , Toshihiro Ohki , Masahito Kanamura , Toshihide Kikkawa
IPC分类号： H01L21/00 , H01L23/58
CPC分类号： H01L29/66462 , H01L21/28264 , H01L21/3185 , H01L29/2003 , H01L29/513 , H01L29/518 , H01L29/7787
摘要： A semiconductor device including a compound semiconductor laminated structure having a plurality of compound semiconductor layers formed over a semiconductor substrate, a first insulation film covering at least a part of a surface of the compound semiconductor laminated structure, and a second insulation film formed on the first insulation film, wherein the second insulation film includes more hydrogen than the first insulation film.
摘要翻译：一种半导体器件，包括具有形成在半导体衬底上的多个化合物半导体层的化合物半导体层叠结构，覆盖化合物半导体层叠结构的表面的至少一部分的第一绝缘膜和形成在第一衬底上的第二绝缘膜绝缘膜，其中所述第二绝缘膜包括比所述第一绝缘膜更多的氢。

95. 发明申请

US20110073873A1 COMPOUND SEMICONDUCTOR DEVICE USING SIC SUBSTRATE AND ITS MANUFACTURE 有权
标题翻译：使用SIC基板及其制造的化合物半导体器件
公开(公告)号：US20110073873A1
公开(公告)日：2011-03-31
申请号：US12889724
申请日：2010-09-24
申请人： Toshihide Kikkawa , Kenji Imanishi
发明人： Toshihide Kikkawa , Kenji Imanishi
IPC分类号： H01L29/24
CPC分类号： H01L29/7787 , H01L21/02378 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： A compound semiconductor device includes: a conductive SiC substrate; an AlN buffer layer formed on said conductive SiC substrate and containing Cl; a compound semiconductor buffer layer formed on said AlN layer which contains Cl, said compound semiconductor buffer layer not containing Cl; and a device constituent layer or layers formed above said compound semiconductor buffer layer not containing Cl.
摘要翻译：化合物半导体器件包括：导电SiC衬底; 形成在所述导电性SiC基板上并含有Cl的AlN缓冲层; 在包含Cl的所述AlN层上形成的化合物半导体缓冲层，所述化合物半导体缓冲层不含Cl; 以及在不含Cl的化合物半导体缓冲层的上方形成的器件构成层。

96. 发明授权

US07875535B2 Compound semiconductor device using SiC substrate and its manufacture 有权
标题翻译：使用SiC衬底的复合半导体器件及其制造
公开(公告)号：US07875535B2
公开(公告)日：2011-01-25
申请号：US12359747
申请日：2009-01-26
申请人： Toshihide Kikkawa , Kenji Imanishi
发明人： Toshihide Kikkawa , Kenji Imanishi
IPC分类号： H01L21/20
CPC分类号： H01L29/7787 , H01L21/02378 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： A compound semiconductor device includes: a conductive SiC substrate; an AlN buffer layer formed on said conductive SiC substrate and containing Cl; a compound semiconductor buffer layer formed on said AlN layer which contains Cl, said compound semiconductor buffer layer not containing Cl; and a device constituent layer or layers formed above said compound semiconductor buffer layer not containing Cl.
摘要翻译：化合物半导体器件包括：导电SiC衬底; 形成在所述导电性SiC基板上并含有Cl的AlN缓冲层; 在包含Cl的所述AlN层上形成的化合物半导体缓冲层，所述化合物半导体缓冲层不含Cl; 以及在不含Cl的化合物半导体缓冲层的上方形成的器件构成层。

97. 发明申请

US20100155741A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20100155741A1
公开(公告)日：2010-06-24
申请号：US12639539
申请日：2009-12-16
申请人： Toshihiro OHKI , Toshihide Kikkawa
发明人： Toshihiro OHKI , Toshihide Kikkawa
IPC分类号： H01L29/778 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/66462
摘要： A compound semiconductor device includes a carrier transit layer including GaN formed over a substrate; a carrier supply layer including GaN formed over the carrier transit layer; a source electrode and a drain electrode formed over the carrier supply layer; a first compound semiconductor layer including N in which a first opening is formed and that is located between the source electrode and the drain electrode over the carrier supply layer; a gate electrode extending from within the first opening to above the first compound semiconductor layer; and an insulator layer having a second opening that is smaller than the first opening, and insulating the gate electrode and the first compound semiconductor layer within the first opening. The gate electrode extends from within the second opening to above the first compound semiconductor layer.
摘要翻译：化合物半导体器件包括在衬底上形成的包含GaN的载流子迁移层; 载体供给层，包括在载流子迁移层上形成的GaN; 形成在载体供给层上的源电极和漏电极; 第一化合物半导体层，其包括N，其中形成有第一开口，并且位于载体供给层之间的源电极和漏电极之间; 栅电极，其从所述第一开口内延伸到所述第一化合物半导体层的上方; 以及具有比第一开口小的第二开口的绝缘体层，并且使第一开口内的栅电极和第一化合物半导体层绝缘。栅电极从第二开口延伸到第一化合物半导体层之上。

98. 发明授权

US07663162B2 Compound semiconductor device and doherty amplifier using compound semiconductor device 有权
公开(公告)号：US07663162B2
公开(公告)日：2010-02-16
申请号：US12071219
申请日：2008-02-19
申请人： Toshihide Kikkawa , Kenji Imanishi
发明人： Toshihide Kikkawa , Kenji Imanishi
IPC分类号： H01L29/74
CPC分类号： H01L29/7785 , H01L29/2003 , H01L29/452 , H01L29/66462 , H03F1/0288
摘要： A lower electron supply layer is disposed over a lower electron transport layer made of compound semiconductor. The lower electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the lower electron transport layer. An upper electron transport layer is disposed over the lower electron supply layer. The upper electron transport layer is made of compound semiconductor having a doping concentration lower than that of the lower electron supply layer or non-doped compound semiconductor. An upper electron supply layer is disposed over the upper electron transport layer. The upper electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the upper electron transport layer. A source and drain electrodes are disposed over the upper electron supply layer. A gate electrode is disposed over the upper electron supply layer between the source and drain electrodes.

99. 发明申请

US20090166815A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20090166815A1
公开(公告)日：2009-07-02
申请号：US12339695
申请日：2008-12-19
申请人： Kozo Makiyama , Toshihiro Ohki , Masahito Kanamura , Toshihide Kikkawa
发明人： Kozo Makiyama , Toshihiro Ohki , Masahito Kanamura , Toshihide Kikkawa
IPC分类号： H01L29/06 , H01L21/18
CPC分类号： H01L29/66462 , H01L21/28264 , H01L21/3185 , H01L29/2003 , H01L29/513 , H01L29/518 , H01L29/7787
摘要： A semiconductor device including a compound semiconductor laminated structure having a plurality of compound semiconductor layers formed over a semiconductor substrate, a first insulation film covering at least a part of a surface of the compound semiconductor laminated structure, and a second insulation film formed on the first insulation film, wherein the second insulation film includes more hydrogen than the first insulation film.
摘要翻译：一种半导体器件，包括具有形成在半导体衬底上的多个化合物半导体层的化合物半导体层叠结构，覆盖化合物半导体层叠结构的表面的至少一部分的第一绝缘膜和形成在第一衬底上的第二绝缘膜绝缘膜，其中所述第二绝缘膜包括比所述第一绝缘膜更多的氢。

100. 发明申请

US20090058532A1 NITRIDE SEMICONDUCTOR DEVICE, DOHERTY AMPLIFIER AND DRAIN VOLTAGE CONTROLLED AMPLIFIER 有权
标题翻译：氮化物半导体器件，DOHERTY放大器和漏极电压控制放大器
公开(公告)号：US20090058532A1
公开(公告)日：2009-03-05
申请号：US12173392
申请日：2008-07-15
申请人： Toshihide Kikkawa , Kenji Imanishi
发明人： Toshihide Kikkawa , Kenji Imanishi
IPC分类号： H03F3/68
CPC分类号： H03F1/0288 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L29/1075 , H01L29/2003 , H01L29/7787 , H03F2200/15 , H03F2200/451 , H03F2200/543
摘要： A nitride semiconductor device includes a substrate, a stacked semiconductor structure formed over the substrate and including a electron channel layer of an undoped nitride semiconductor and an electron supplying layer of an n-type nitride semiconductor formed epitaxially over the electron channel layer, the n-type nitride semiconductor having an electron affinity smaller than an electron affinity of said undoped nitride semiconductor and a two-dimensional electron gas being formed in the electron channel layer along an interface to the electron supply layer, a gate electrode formed over the stacked semiconductor structure in correspondence to a channel region, and source and drain electrodes formed over the stacked semiconductor structure in ohmic contact therewith respectively at a first side and a second side of the gate electrode, the stacked semiconductor structure including, between the substrate and the electron channel layer, an n-type conductive layer and a barrier layer containing Al formed consecutively and epitaxially.
摘要翻译：氮化物半导体器件包括衬底，在衬底上形成的堆叠半导体结构，并且包括在电子沟道层外部形成的非掺杂氮化物半导体的电子沟道层和n型氮化物半导体的电子供给层，具有小于所述未掺杂的氮化物半导体的电子亲和力的电子亲和力的二次电子气体和沿着与电子供应层的界面在电子通道层中形成的二维电子气的氮化物半导体，形成在堆叠半导体结构上的栅电极对应于沟道区，以及源极和漏极，其形成在层叠的半导体结构上，分别与栅电极的第一侧和第二侧欧姆接触，该层叠半导体结构包括在衬底和电子通道层之间， n型导电层和阻挡层 aining铝连续形成和外延形成。

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