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91. 发明授权

US08394578B2 Method of forming resist pattern and negative tone-development resist composition 有权
标题翻译：形成抗蚀剂图案和负色调显影抗蚀剂组合物的方法
公开(公告)号：US08394578B2
公开(公告)日：2013-03-12
申请号：US13028594
申请日：2011-02-16
申请人： Tomoyuki Hirano , Takahiro Dazai , Daiju Shiono
发明人： Tomoyuki Hirano , Takahiro Dazai , Daiju Shiono
IPC分类号： G03F7/26
CPC分类号： C08F20/10 , G03F7/0397 , G03F7/2041 , G03F7/325
摘要： A method of forming a resist pattern, including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent under action of an acid and an acid-generator component (B) which generates an acid upon exposure, conducting exposure of the resist film, and patterning the resist film by a negative tone development using a developing solution containing an organic solvent, wherein the base component (A) includes a resin component (A1) containing a structural unit (a1) derived from an acrylate ester containing an acid decomposable group which exhibits increased hydrophilicity by the action of an acid and a structural unit (a0) derived from an acrylate ester containing an —SO2— containing cyclic group.
摘要翻译：一种形成抗蚀剂图案的方法，包括：使用含有在酸和酸发生剂组分（B）的作用下在有机溶剂中表现出降低的溶解度的碱成分（A）的抗蚀剂组合物在基材上形成抗蚀剂膜，其在曝光时产生酸，曝光抗蚀剂膜，并使用含有有机溶剂的显影液通过负色调显影对抗蚀剂膜进行图案化，其中所述基础组分（A）包括含有结构来自含有酸分解性基团的丙烯酸酯的丙烯酸酯单元（a1），其通过酸的作用显示增加的亲水性和由含有-SO 2 - 的环状基团的丙烯酸酯衍生的结构单元（a0）。

92. 发明授权

US08367296B2 Positive resist composition, method of forming resist pattern, and polymeric compound 有权
标题翻译：正型抗蚀剂组合物，形成抗蚀剂图案的方法和聚合物
公开(公告)号：US08367296B2
公开(公告)日：2013-02-05
申请号：US12568549
申请日：2009-09-28
申请人： Tomoyuki Hirano , Takahiro Dazai , Daiju Shiono , Tasuku Matsumiya
发明人： Tomoyuki Hirano , Takahiro Dazai , Daiju Shiono , Tasuku Matsumiya
IPC分类号： G03F7/004 , C08F24/00 , C08F28/06
CPC分类号： C08F220/28 , C08F220/26 , C08F220/68 , C08F228/02 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1′) containing an acid dissociable, dissolution inhibiting group within the structure thereof and including a structural unit (a0) represented by general formula (a0-1) (R2 represents a divalent linking group, and A″ represents an oxygen atom, a sulfur atom, or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom) and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group; or a polymeric compound (A1) including the structural unit (a0) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1'），其包含在其结构内的可酸解离的溶解抑制基团，并且包含由通式（a0-1）表示的结构单元（a0）（R2表示二价连接基团，A“表示氧原子，硫原子或可含有氧原子或硫原子的1〜5个碳原子的亚烷基）和由含有内酯的环状基团的丙烯酸酯衍生的结构单元（a2）或包含结构单元（a0）的聚合化合物（A1）和由含有酸解离的溶解抑制基团的丙烯酸酯衍生的结构单元（a1）。

93. 发明申请

US20120289655A1 POLYCARBONATE RESIN COMPOSITION 有权
标题翻译：聚碳酸酯树脂组合物
公开(公告)号：US20120289655A1
公开(公告)日：2012-11-15
申请号：US13522138
申请日：2011-01-13
申请人： Atsushi Sumita , Daisuke Takahashi , Fumihiro Togashi , Tomoyuki Hirano
发明人： Atsushi Sumita , Daisuke Takahashi , Fumihiro Togashi , Tomoyuki Hirano
IPC分类号： C08L69/00 , C08L51/00 , C08L55/02
CPC分类号： C08L67/02 , B29C45/0001 , B29L2031/3041 , C08G63/85 , C08L69/00 , Y02P20/582 , C08L2666/18
摘要： The present invention seeks to provide a resin composition which contains an aromatic polycarbonate resin and a polyester resin and which has excellent mechanical strength, flowability and thermal stability and also has excellent moist heat resistance together.The present invention is a resin composition containing 50 to 99 parts by weight of an aromatic polycarbonate resin (component A) and 1 to 50 parts by weight of a polyester resin (component B), the component B being a polyester resin polymerized in the presence of a titanium-phosphorus catalyst obtained by reacting titanium tetrabutoxide, etc., with monolauryl phosphate, etc.
摘要翻译：本发明寻求提供一种包含芳香族聚碳酸酯树脂和聚酯树脂并且具有优异的机械强度，流动性和热稳定性并且一起具有优异的耐湿热性的树脂组合物。本发明是一种含有50〜99重量份芳香族聚碳酸酯树脂（A成分）和1〜50重量份聚酯树脂（B成分）的树脂组合物，B成分为聚酯树脂通过使四丁氧基钛等与单月桂基磷酸酯等反应而得到的钛 - 磷催化剂。

94. 发明授权

US08236477B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08236477B2
公开(公告)日：2012-08-07
申请号：US12591819
申请日：2009-12-02
申请人： Tasuku Matsumiya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
发明人： Tasuku Matsumiya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1），由通式（a0-1）表示的结构单元（a0），由含有酸解离性，溶解抑制基团的丙烯酸酯衍生的结构单元（a1）和来自丙烯酸酯的结构单元（a3）含有由通式（a3-1）表示的含羟基的脂族烃基的酯和基于构成聚合化合物（A1）的所有结构单元的总和的结构单元（a3）的量在该范围内为1〜30摩尔％。

95. 发明授权

US08227170B2 Resist composition, method of forming resist pattern, polymeric compound, and compound 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案的方法，聚合物和化合物
公开(公告)号：US08227170B2
公开(公告)日：2012-07-24
申请号：US12685579
申请日：2010-01-11
申请人： Takahiro Dazai , Daiju Shiono , Tomoyuki Hirano , Tasuku Matsumiya , Daichi Takaki , Takayoshi Mori , Junichi Tsuchiya
发明人： Takahiro Dazai , Daiju Shiono , Tomoyuki Hirano , Tasuku Matsumiya , Daichi Takaki , Takayoshi Mori , Junichi Tsuchiya
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C08F28/06 , C07D327/04
CPC分类号： C07D493/18 , C07D327/04 , C08F20/38 , C08F220/38 , C08F2220/283 , C08F2220/382 , G03F7/0382 , G03F7/0397 , G03F7/2041 , Y10S430/111
摘要： A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of an acid, and an acid generator component (B), wherein the base component (A) includes a polymeric compound (A0) containing a structural unit (a0) represented by the general formula (a0-1) shown below: (wherein, R1 represents a hydrogen atom, an alkyl group or a halogenated alkyl group; R2 represents a bivalent linking group containing at least one kind of polar groups selected from the group consisting of —O—, —C(═O)—, —C(═O)—O—, a carbonate linkage (—O—C(═O)—O—), —S—, —S(═O)2—, —S(═O)2—O—, —NH—, —NR04— (wherein, R04 represents an alkyl group or an acyl group), and —NH—C(═O)—; and R3 represents a cyclic group containing a sulfonyl group within the ring skeleton).
摘要翻译：一种抗蚀剂组合物，其包含在酸性作用下在碱性显影液中显示出改变的溶解度的碱成分（A）和酸产生剂成分（B），其中，所述基础成分（A）含有含有由下述通式（a0-1）表示的结构单元（a0）：（其中，R1表示氢原子，烷基或卤代烷基; R2表示含有至少一种极性基团的二价连接基团选自-O - ， - C（= O） - ， - C（= O）-O-，碳酸酯键（-O-C（= O）-O-），-S-， S（= O）2 - ， - S（= O）2 -O - ， - NH - ， - NRO4-（其中，R04表示烷基或酰基）和-NH-C（= R 3表示在环骨架中含有磺酰基的环状基团）。

96. 发明申请

US20120100487A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND 审中-公开
标题翻译：耐蚀组合物，形成耐火图案的方法和聚合物
公开(公告)号：US20120100487A1
公开(公告)日：2012-04-26
申请号：US13277061
申请日：2011-10-19
申请人： Tomoyuki Hirano , Daichi Takaki , Daiju Shiono , Kenri Konno , Kensuke Matsuzawa , Jun Iwashita
发明人： Tomoyuki Hirano , Daichi Takaki , Daiju Shiono , Kenri Konno , Kensuke Matsuzawa , Jun Iwashita
IPC分类号： G03F7/20 , C08F228/02 , C08F228/06
CPC分类号： C08F220/38 , C08F220/18 , C08F220/28 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A resist composition including a base component that generates acid upon exposure and also exhibits increased polarity by action of acid, the base component including a polymeric compound having a structural unit that generates acid upon exposure; a structural unit derived from an acrylate ester, in which a hydrogen atom bonded to a carbon atom on the α-position may be substituted with a substituent, and also includes an acid decomposable group that exhibits increased polarity by action of acid; and a structural unit represented by a particular general formula.
摘要翻译：一种抗蚀剂组合物，其包含在暴露时产生酸的基础成分，并且还通过酸的作用显示出极性增加，所述碱成分包括具有暴露后产生酸的结构单元的聚合物; 衍生自丙烯酸酯的结构单元，其中与α-位上的碳原子键合的氢原子可以被取代基取代，并且还包括通过酸的作用显示出极性增加的酸分解基团; 和由特定通式表示的结构单元。

97. 发明申请

US20110269280A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110269280A1
公开(公告)日：2011-11-03
申请号：US13181583
申请日：2011-07-13
申请人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
发明人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
IPC分类号： H01L21/8234
CPC分类号： H01L21/82385 , H01L21/823425 , H01L21/823468 , H01L21/823475 , H01L21/823835 , H01L21/823857 , H01L21/823871 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.
摘要翻译：一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

98. 发明授权

US07994603B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07994603B2
公开(公告)日：2011-08-09
申请号：US12168427
申请日：2008-07-07
申请人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
发明人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
IPC分类号： H01L21/70
CPC分类号： H01L21/82385 , H01L21/823425 , H01L21/823468 , H01L21/823475 , H01L21/823835 , H01L21/823857 , H01L21/823871 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.
摘要翻译：本文公开了一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

99. 发明授权

US07989138B2 Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern 失效
标题翻译：含氟化合物，浸渍曝光用抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07989138B2
公开(公告)日：2011-08-02
申请号：US12323212
申请日：2008-11-25
申请人： Sanae Furuya , Takahiro Dazai , Takayoshi Mori , Ryoichi Takasu , Tomoyuki Hirano
发明人： Sanae Furuya , Takahiro Dazai , Takayoshi Mori , Ryoichi Takasu , Tomoyuki Hirano
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , C08F220/10 , C08F220/30 , G03F7/0046 , G03F7/0382 , G03F7/2041 , Y10S430/106 , Y10S430/146
摘要： A fluorine-containing compound represented by a general formula (c-1) shown below: [Chemical Formula 1] RX-AN-(OR2)a (c-1) [wherein, RX represents an organic group, AN represents a naphthalene ring that may have a substituent, R2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among AN and said a R2 groups contains a fluorine atom].
摘要翻译：由下列通式（c-1）表示的含氟化合物：[化学式1] RX-AN-（OR2）a（c-1）[其中，RX表示有机基团，AN表示萘环其可以具有取代基，R2表示碱可解离基团，并且a表示1或2，条件是AN和所述R2基团中的至少一个含有氟原子]。

100. 发明申请

US20110056511A1 Cleaning liquid and a cleaning method 有权
标题翻译：清洗液和清洁方法
公开(公告)号：US20110056511A1
公开(公告)日：2011-03-10
申请号：US12662760
申请日：2010-05-03
申请人： Jun Koshiyama , Jiro Yokoya , Tomoyuki Hirano , Hiromitsu Tsuji
发明人： Jun Koshiyama , Jiro Yokoya , Tomoyuki Hirano , Hiromitsu Tsuji
IPC分类号： B08B7/00 , C11D3/43 , C11D3/44
CPC分类号： C11D1/72 , C11D1/667 , C11D1/722 , C11D3/43 , C11D11/0047 , G03F7/2041 , G03F7/70341 , G03F7/70925
摘要： Problem: To provide a cleaning liquid and a cleaning method having excellent leaning capability. In a process of liquid immersion lithography, they can preventing the damage to be caused by the component released from the photoresist to photoexposure devices; the waste treatment is easy; the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the production cost is reduced not detracting from the throughput in semiconductor production.Means for Solution: A cleaning liquid to be used for cleaning a photoexposure device in a process of liquid immersion lithography, which comprises at least 5% by mass of a nonionic surfactant containing at least one group selected from an ethyleneoxy group, a propyleneoxy group and a polyglycerin group, and a balance of water; and a cleaning method using it.
摘要翻译：问题：提供具有优良倾斜能力的清洗液和清洗方法。在液浸光刻的过程中，它们可以防止由光致抗蚀剂释放到光曝光装置上的组分引起的损伤; 废物处理容易; 用于液浸光刻介质的清洁液的替代效率高，并且降低了生产成本，而不会降低半导体生产中的生产量。解决方法：在液浸光刻工艺中用于清洗曝光装置的清洗液，其包含至少5质量％的含有至少一种选自乙烯氧基，丙烯氧基和聚甘油基团和余量的水; 和使用它的清洁方法。

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