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91. 发明授权

US07406925B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07406925B2
公开(公告)日：2008-08-05
申请号：US10983670
申请日：2004-11-09
申请人： Tomohiro Okumura , Yukihiro Maegawa , Izuru Matsuda , Takayuki Kai , Mitsuo Saitoh
发明人： Tomohiro Okumura , Yukihiro Maegawa , Izuru Matsuda , Takayuki Kai , Mitsuo Saitoh
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32091 , C23C16/4412 , H01J37/32192 , H01J37/3222 , H01J37/3244 , H01J37/32834
摘要： A plasma processing apparatus including a vacuum chamber, a gas supply unit for supplying gas into the vacuum chamber, an exhausting unit for exhausting the interior of the vacuum chamber, a pressure-regulating valve for controlling the interior of the vacuum chamber to a specified pressure, a substrate electrode for placing thereon a substrate within the vacuum chamber, an antenna provided opposite to the substrate electrode, and a high-frequency power supply capable of supplying to the antenna a high-frequency power having a frequency of 50 MHz to 3 GHz. The plasma processing apparatus also has a dielectric plate sandwiched between the antenna and an inner surface of the vacuum chamber, an antenna cover for covering side surfaces of the antenna and the dielectric plate and a substrate-facing surface of the antenna, a slit cover for covering an exposed surface of the substrate-facing inner surface of the vacuum chamber and fixing the antenna cover to a wall surface of the vacuum chamber. Also, a heat-conducting sheet is provided between the antenna and the antenna cover.
摘要翻译：一种等离子体处理装置，包括真空室，用于向真空室供应气体的气体供应单元，用于排出真空室内部的排气单元，用于将真空室内部控制到特定压力的压力调节阀，用于将真空室内的基板放置的基板电极，与基板电极相对设置的天线，以及能够向天线供给频率为50MHz〜3GHz的高频电力的高频电源。等离子体处理装置还具有夹在天线和真空室的内表面之间的电介质板，用于覆盖天线和电介质板的侧表面的天线盖和天线的面向基板的表面，狭缝盖覆盖真空室的面向基板的内表面的暴露表面，并将天线盖固定到真空室的壁表面。此外，在天线和天线罩之间设置导热片。

92. 发明授权

US07232591B2 Method of using an adhesive for temperature control during plasma processing 失效
标题翻译：在等离子体处理中使用粘合剂进行温度控制的方法
公开(公告)号：US07232591B2
公开(公告)日：2007-06-19
申请号：US10408261
申请日：2003-04-08
申请人： Tomohiro Okumura , Toshinari Nitta
发明人： Tomohiro Okumura , Toshinari Nitta
IPC分类号： H05H1/24 , H01L21/306 , C23C16/00
CPC分类号： H01L21/68721 , C03C17/23 , C03C19/00 , C03C2217/213 , C03C2218/153 , C03C2218/328 , H01J37/321 , H01J2237/2001 , H01L21/67069 , H01L21/67103 , H01L21/67132 , H01L21/68735 , H01L21/68742 , H01L21/68785
摘要： Provided is a plasma processing method and apparatus and a tray for plasma processing, which are able to improve temperature controllability of a substrate. If a vacuum chamber is evacuated by a pump while introducing a specified gas by a gas supply unit into the vacuum chamber and a high-frequency power is applied by a coil use high-frequency power supply to a coil while maintaining an interior of the vacuum chamber at a specified pressure, then plasma is generated in the vacuum chamber, and a substrate placed on a substrate electrode can be subjected to plasma processing. At this time, by providing an adhesive sheet between the substrate electrode and the substrate, temperature controllability of the substrate can be improved.
摘要翻译：提供了能够提高基板的温度可控性的等离子体处理方法和等离子体处理装置和托盘。如果真空室被泵抽气，同时通过气体供应单元将特定气体引入真空室，并且通过线圈将高频电力施加到线圈上，同时保持真空内部在真空室中产生等离子体，并且可以对放置在基板电极上的基板进行等离子体处理。此时，通过在基板电极和基板之间设置粘合片，能够提高基板的温度控制性。

93. 发明授权

US07176402B2 Method and apparatus for processing electronic parts 有权
标题翻译：电子零件加工方法及装置
公开(公告)号：US07176402B2
公开(公告)日：2007-02-13
申请号：US10969274
申请日：2004-10-21
申请人： Tomohiro Okumura , Kenichiro Suetsugu , Hiroshi Kawazoe , Mitsuo Saitoh , Akio Furusawa
发明人： Tomohiro Okumura , Kenichiro Suetsugu , Hiroshi Kawazoe , Mitsuo Saitoh , Akio Furusawa
IPC分类号： B23K10/00
CPC分类号： H05K3/3489 , H05K3/288 , H05K3/3447 , H05K2201/10287 , H05K2203/095
摘要： An electronic part processing method for peeling off a resin coating of an electronic part having a terminal section. The method includes a step of irradiating, with plasma, a coated wire having copper as a principal constituent and a surface coated with a resin.
摘要翻译：一种用于剥离具有端子部分的电子部件的树脂涂层的电子部件处理方法。该方法包括以等离子体照射具有铜作为主要成分的涂覆线和涂覆有树脂的表面的步骤。

94. 发明申请

US20050082005A1 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20050082005A1
公开(公告)日：2005-04-21
申请号：US10983670
申请日：2004-11-09
申请人： Tomohiro Okumura , Yukihiro Maegawa , Izuru Matsuda , Takayuki Kai , Mitsuo Saitoh
发明人： Tomohiro Okumura , Yukihiro Maegawa , Izuru Matsuda , Takayuki Kai , Mitsuo Saitoh
IPC分类号： C23C16/00 , C23F1/00 , H01J37/32 , H01L21/00 , H05H1/24
CPC分类号： H01J37/32091 , C23C16/4412 , H01J37/32192 , H01J37/3222 , H01J37/3244 , H01J37/32834
摘要： A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the antenna cover by the slit cover, and fixing the slit cover to a wall surface of the vacuum chamber.
摘要翻译：一种用于在真空室中产生等离子体并处理放置在基板电极上的基板的等离子体处理方法，所述等离子体是通过将频率为50MHz至3GHz的高频电源提供给与基板电极相对设置的天线而产生的通过向真空室供给气体并排出真空室的内部，真空室的内部被控制到规定的压力，该方法包括夹在天线和真空室之间的电介质板，天线和电介质板突出到真空室中，通过设置在天线和真空室之间的环形和凹槽来控制基板上的等离子体分布，并且通过使天线盖固定的状态来处理基板的狭缝和天线覆盖有天线盖，使狭缝的底面覆盖有狭缝c 通过狭缝盖支撑天线罩，并将狭缝盖固定到真空室的壁面。

95. 发明申请

US20050040145A1 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20050040145A1
公开(公告)日：2005-02-24
申请号：US10747059
申请日：2003-12-30
申请人： Tomohiro Okumura , Mitsuo Saitoh
发明人： Tomohiro Okumura , Mitsuo Saitoh
IPC分类号： H01L21/205 , H05H1/48 , B23K10/00
CPC分类号： H05H1/48
摘要： A plasma processing method for processing a linear portion of an object to be processed by generating a linear plasma by supplying an electric power to an electrode provided at a plasma source or the object to be processed while supplying gas to the plasma source arranged in the neighborhood of the object to be processed and making activated particles generated by the plasma act on the object to be processed, the method comprising: detecting an inclination of the plasma source along a direction of an x-axis when the x-axis is taken in a linear direction of the linear portion of the object to be processed; and processing the linear portion of the object to be processed by the generated linear plasma by moving the plasma source along the x-axis direction while maintaining relative positions of the plasma source and the object to be processed so that the detected inclination of the plasma source becomes approximately zero.
摘要翻译：一种等离子体处理方法，用于通过向设置在等离子体源或待处理物体的电极提供电力而产生线性等离子体，同时向邻近的等离子体源供给气体，从而生成线性部分的待处理物体和由等离子体产生的活化颗粒作用在待处理物体上，该方法包括：当x轴被取入时，检测等离子体源沿X轴方向的倾斜度要处理的物体的线性部分的线性方向; 以及通过沿着x轴方向移动等离子体源来处理由所产生的线性等离子体处理的物体的直线部分，同时保持等离子体源和被处理物体的相对位置，使得检测到的等离子体源的倾斜变成大约零。

96. 发明授权

US06432730B1 Plasma processing method and apparatus 有权
公开(公告)号：US06432730B1
公开(公告)日：2002-08-13
申请号：US09789799
申请日：2001-02-22
申请人： Tomohiro Okumura , Takuya Matsui
发明人： Tomohiro Okumura , Takuya Matsui
IPC分类号： H01L2100
摘要： A plasma processing method includes evacuating a vacuum chamber while supplying a gas into the vacuum chamber, thereby controlling an interior of the vacuum chamber to a pressure, and supplying a high frequency power of a frequency of 50 MHz-3 GHz to an antenna which is set opposite to a substrate placed to a substrate electrode in the vacuum chamber and which has a structure with a dielectric member held between a wall face of the vacuum chamber opposite to the substrate and a metallic plate, thereby generating plasma inside the vacuum chamber and processing the substrate, wherein the high frequency power is supplied to satisfy a relation 3r

97. 发明授权

US08160298B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08160298B2
公开(公告)日：2012-04-17
申请号：US12254306
申请日：2008-10-20
申请人： Tomohiro Okumura , Ryoichi Nishikawa , Takaaki Muramatsu , Shinji Suganuma
发明人： Tomohiro Okumura , Ryoichi Nishikawa , Takaaki Muramatsu , Shinji Suganuma
IPC分类号： G06K9/00
CPC分类号： B60K35/00 , B60K37/02 , B60K2350/1072 , B60K2350/203
摘要： A display device includes a display panel and a control unit. The control unit is configured to control a display condition of the display panel by successively switching a plurality of frames, thereby to display a pointer image indicating a pointer and a path image indicating a path of motion of the pointer image. The path image of a first frame, which is any one of the plurality of frames, is provided continuously from a second location where the pointer image of a second frame, which is another one of the multiple frames and immediately before the first frame, is displayed to a first location where the pointer image of the first frame is displayed.
摘要翻译：显示装置包括显示面板和控制单元。控制单元被配置为通过连续切换多个帧来控制显示面板的显示状态，从而显示指示指针的指针图像和指示指针图像的运动路径的路径图像。作为多个帧中的任何一个的第一帧的路径图像从第二位置连续地提供，其中第二帧的指针图像是第二帧的指针图像，其是多个帧中的另一个并且紧接在第一帧之前的指针图像是显示到显示第一帧的指针图像的第一位置。

98. 发明授权

US08063563B2 Plasma display panel and method for producing the same 失效
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US08063563B2
公开(公告)日：2011-11-22
申请号：US12780073
申请日：2010-05-14
申请人： Michiru Kuromiya , Tomohiro Okumura , Motoi Hatanaka
发明人： Michiru Kuromiya , Tomohiro Okumura , Motoi Hatanaka
IPC分类号： H01J17/49
CPC分类号： H01J11/12 , H01J9/02 , H01J11/38
摘要： A plasma display panel includes a front panel having a dielectric layer. The dielectric layer of the front panel includes a first dielectric layer and a second dielectric layer disposed on the first dielectric layer. The gas permeability of the second dielectric layer is in the range of 0% to 1%. The second dielectric layer may be formed by heating the surface of the first dielectric layer to thermally metamorphose or transubstantiate the first dielectric layer to a limited depth from the surface the first dielectric layer.
摘要翻译：等离子体显示面板包括具有电介质层的前面板。前面板的电介质层包括设置在第一电介质层上的第一电介质层和第二电介质层。第二电介质层的透气度在0％〜1％的范围内。第二电介质层可以通过加热第一电介质层的表面以将第一电介质层热变性或将第一电介质层转变为与第一电介质层的表面有限的深度来形成。

99. 发明授权

US07755286B2 Glass film, process for production thereof, and optical electronic device 失效
标题翻译：玻璃膜，其制造方法和光电子器件
公开(公告)号：US07755286B2
公开(公告)日：2010-07-13
申请号：US11915467
申请日：2006-08-03
申请人： Tomohiro Okumura , Mitsuo Saitoh , Hironobu Inoue , Motoi Hatanaka
发明人： Tomohiro Okumura , Mitsuo Saitoh , Hironobu Inoue , Motoi Hatanaka
IPC分类号： H01J17/49
CPC分类号： C03C1/008 , C03C14/004 , C03C17/007 , C03C2214/32 , C03C2217/452 , C03C2217/475 , C03C2217/478 , Y10T428/252
摘要： Disclosed is a dense silicon oxide film having a high insulation resistance, which is a glass film having a certain level of thickness. Specifically, disclosed are a silicon oxide film, and a glass film comprising the silicon oxide film and silica particles incorporated in the silicon oxide film. The glass film can be produced by a process comprising the steps of: applying a paste comprising silica particles, an organic silicon compound which is in a liquid form at room temperature and water onto a substrate; and oxidizing the organic silicon compound in the paste.
摘要翻译：公开了具有高绝缘电阻的致密氧化硅膜，其是具有一定厚度的玻璃膜。具体地，公开了一种氧化硅膜，以及包含氧化硅膜和掺入氧化硅膜中的二氧化硅颗粒的玻璃膜。玻璃膜可以通过包括以下步骤的方法制备：将包含二氧化硅颗粒的糊状物，室温下为液体形式的有机硅化合物和水施加到基材上; 和氧化糊料中的有机硅化合物。

100. 发明申请

US20100009469A1 PLASMA DOPING METHOD AND APPARATUS 审中-公开
标题翻译：等离子喷涂方法和装置
公开(公告)号：US20100009469A1
公开(公告)日：2010-01-14
申请号：US12398669
申请日：2009-03-05
申请人： Takayuki Kai , Tomohiro Okumura , Hisao Nagai , Cheng-Guo Jin , Bunji Mizuno
发明人： Takayuki Kai , Tomohiro Okumura , Hisao Nagai , Cheng-Guo Jin , Bunji Mizuno
IPC分类号： H01L21/02
CPC分类号： H05H1/0043 , H01J37/32412 , H01J37/32972 , H01L21/2236 , H01L22/12 , H01L22/26
摘要： During a plasma discharging process, a laser beam having a certain exciting wavelength is applied to a surface of a process substrate, so as to measure, using scattered light, an impurity density and a crystal state on the surface of the process substrate.
摘要翻译：在等离子体放电过程中，将具有一定激发波长的激光束施加到处理衬底的表面，以便使用散射光在处理衬底的表面上测量杂质浓度和晶体状态。

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