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91. 发明授权

US5113790A Apparatus for the plasma treatment of substrates 失效
标题翻译：用于等离子体处理基板的装置
公开(公告)号：US5113790A
公开(公告)日：1992-05-19
申请号：US728258
申请日：1991-07-11
申请人： Michael Geisler , Michael Jung , Rudolf K. Faulhaber
发明人： Michael Geisler , Michael Jung , Rudolf K. Faulhaber
IPC分类号： C23C16/509 , H01J37/32
CPC分类号： H01J37/32623 , C23C16/509 , H01J37/32596 , H01J37/3266
摘要： The invention relates to an apparatus for the plasma treatment of substrates in a plasma discharge excited by radiofrequency between two electrodes 3, 8, supplied by a radiofrequency source, of which the first is configured as a hollow electrode 3 and the second an electrode 8 bearing a substrate 7 is placed in front of the cavity (10) of the first electrode and can be moved past the latter, the hollow electrode being surrounded by a dark-space shielding (14) and has a margin 9 pointing toward the second electrode 8 and projections 12 lying between the margins at the same potential as the first electrode 3. Between the projections 12 permanent magnets 34 are provided by which the substrate bias (self-bias) is adjustable independently of the discharge geometry, the discharge pressure and the radiofrequency power.
摘要翻译：本发明涉及一种用于等离子体处理等离子体处理的装置，该等离子体处理是由射频源提供的两个电极3,8之间的射频激发的等离子体放电，其中第一电极被配置为中空电极3，第二电极8的轴承基板7被放置在第一电极的空腔（10）的前面并且可以移动通过该基板7，中空电极被暗空间屏蔽（14）包围，并且具有指向第二电极8的边缘9 和凸起12位于与第一电极3相同的电位的边缘之间。在突起12之间提供永磁体34，通过该永磁体34可以独立于排出几何形状，排出压力和射频来调整衬底偏压（自偏压）功率。

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