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91. 发明授权

US06690421B1 Structure of solid state image pickup device 失效
标题翻译：固态摄像装置的结构
公开(公告)号：US06690421B1
公开(公告)日：2004-02-10
申请号：US08960058
申请日：1997-10-29
申请人： Tetsuo Yamada , Kazuyuki Masukane
发明人： Tetsuo Yamada , Kazuyuki Masukane
IPC分类号： H04N314
CPC分类号： H04N9/045 , H04N5/347 , H04N5/372 , H04N5/37213 , H04N5/3728
摘要： A solid state image pickup device in which a plurality of photoelectric conversion element pairs are disposed in a row direction and a column direction, each pair constituting one unit including two adjacent photoelectric conversion elements disposed in the column direction, wherein a pitch of pairs in the row direction is generally equal to a pitch of pairs in the column direction.
摘要翻译：一种固体摄像装置，其中多个光电转换元件对在行方向和列方向上配置，每对构成包括在列方向上设置的两个相邻的光电转换元件的一个单元，其中，行方向通常等于列方向上的对间距。

92. 发明授权

US06236434B1 Solid state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US06236434B1
公开(公告)日：2001-05-22
申请号：US08960056
申请日：1997-10-29
申请人： Tetsuo Yamada
发明人： Tetsuo Yamada
IPC分类号： H04N5335
CPC分类号： H01L27/14812 , H01L27/14843 , H04N5/3728
摘要： Photosensor rows are disposed in such a manner that one photosensor row is shifted by a half of a layout pitch of photosensors, relative to another adjacent photosensor row. Column direction charge transfer devices are disposed in such a manner that two column direction charge transfer devices are disposed between adjacent two photosensors in the row direction and one column direction charge transfer device is disposed between obliquely adjacent two photosensors.
摘要翻译：光电传感器行被布置成使得一个光电传感器行相对于另一个相邻的光电传感器行偏移了光电传感器的布局间距的一半。列方向电荷转移装置以两行列方向电荷转移装置布置在行方向上相邻的两个光电传感器之间并且一个列方向电荷转移装置设置在倾斜相邻的两个光电传感器之间的方式。

93. 发明授权

US5595718A Process for producing a crystalline silicon nitride powder 失效
标题翻译：制造结晶氮化硅粉末的方法
公开(公告)号：US5595718A
公开(公告)日：1997-01-21
申请号：US496852
申请日：1995-06-20
申请人： Tetsuo Yamada , Takeshi Yamao , Yasukazu Kondo , Hideo Nakamura , Tadayuki Mitani
发明人： Tetsuo Yamada , Takeshi Yamao , Yasukazu Kondo , Hideo Nakamura , Tadayuki Mitani
IPC分类号： C01B21/068 , C04B35/626
CPC分类号： C01B21/068 , C01B21/0687 , C01P2002/02 , C01P2006/10 , C01P2006/12
摘要： A crystalline silicon nitride powder having a high specific surface area and an enhanced sintering property is produced with a high producibility and a large scale, by calcining a silane material comprising at least one nitrogen-containing silane compound in a nitrogen-containing inert gas mixed with 0.1 to 5%, based on the total volume of the mixed gas, of molecular oxygen, preferably at 600.degree. to 1200.degree. C.; baking the resultant amorphous silicon nitride powder in a nitrogen-containing inert gas preferably at 1400.degree. to 1700.degree. C.; and milling the resultant crystalline silicon nitride powder in a mixed gas atmosphere comprising 5 to 40% by volume of molecular oxygen and the balance consisting of an inert gas preferably at 0.degree. to 100.degree. C.
摘要翻译：通过将含有至少一种含氮硅烷化合物的硅烷材料在含氮惰性气体中混合，将具有高比表面积和高烧结性的结晶氮化硅粉末以高生产率和大规模生产，基于混合气体的总体积，分子氧为0.1〜5％，优选为600〜1200℃。将得到的无定形氮化硅粉末在含氮惰性气体中，优选在1400〜1700℃下烘烤; 并将所得结晶氮化硅粉末在包含5至40体积％分子氧的混合气体气氛中研磨，余量由惰性气体优选在0至100℃下进行。

94. 发明授权

US5478784A Silicon nitride powder and silicon nitride-containing aqueous slurry 失效
标题翻译：氮化硅粉末和含氮化硅的水性浆料
公开(公告)号：US5478784A
公开(公告)日：1995-12-26
申请号：US350149
申请日：1994-11-29
申请人： Koji Shibata , Hiroshi Yanagisawa , Tetsuo Yamada
发明人： Koji Shibata , Hiroshi Yanagisawa , Tetsuo Yamada
IPC分类号： C04B35/632 , C01B21/068 , C04B35/584
CPC分类号： C01B21/0687 , C01P2004/61 , C01P2006/12 , C01P2006/22
摘要： Disclosed is a powder of silicon nitride particles having a specific surface area of from 5 to 20 m.sup.2 /g. When an aqueous solution of a polyvinyl alcohol having a mean degree of polymerization of X and a degree of saponification of Y (mol %) is adsorbed to the powder, the amount of saturated adsorption at 20.degree. C. is not higher than the amount of adsorption to be represented by:Amount of Adsorption (mg/m.sup.2)=0.000112X+0.523Y/100-0.207 (1)Also disclosed is a low-viscosity silicon nitride-containing aqueous slurry containing said powder.
摘要翻译：公开了比表面积为5〜20m 2 / g的氮化硅颗粒粉末。当平均聚合度为X，皂化度为Y（mol％）的聚乙烯醇的水溶液吸附到粉末时，20℃下的饱和吸附量不高于吸附量表示为：吸附量（mg / m2）= 0.000112X + 0.523Y / 100-0.207（1）还公开了含有该粉末的低粘度含氮化硅的含水浆料。

95. 发明授权

US5341081A Vector control apparatus for induction motor 失效
标题翻译：感应电动机矢量控制装置
公开(公告)号：US5341081A
公开(公告)日：1994-08-23
申请号：US102220
申请日：1993-08-05
申请人： Tetsuo Yamada
发明人： Tetsuo Yamada
IPC分类号： H02P21/08 , H02P7/00
CPC分类号： H02P21/09
摘要： In a vector control apparatus for an induction motor, a divider (13) is provided which receives an exciting instruction .lambda..sub.2d */M* from a secondary magnetic flux instruction amplifier (1.sub.1) which outputs .lambda..sub.2d */M* according to an angular frequency .omega..sub.r derived from a speed detector (4.sub.3). The divider (13) receives an exciting inductance variation A.sub.Mn from the exciting inductance M' compensation circuit (12, 12') to divide A.sub.Mn by .lambda..sub.2d */M* so that the derived output value is supplied to a first-order advance element calculation block (1.sub.2) so that a target value i.sub.1d * in a d-axis component in a primary current of the induction motor is derived.
摘要翻译：在用于感应电动机的矢量控制装置中，设置有从二次磁通指令放大器（11）接收激励指令λ2d * / M *的分频器（13），其根据角度输出λ2d * / M * 频率ωr来自速度检测器（43）。分压器（13）从励磁电感M'补偿电路（12,12'）接收励磁电感变化AMn，以将AMn分开λ2d * / M *，使得导出的输出值被提供给一阶先进元件计算块（12），从而导出感应电动机的初级电流的d轴分量中的目标值i1d *。

96. 发明授权

US5148013A Solid state imaging device and method of driving the same 失效
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US5148013A
公开(公告)日：1992-09-15
申请号：US725682
申请日：1991-07-03
申请人： Tetsuo Yamada
发明人： Tetsuo Yamada
IPC分类号： H01L27/14 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/369 , H04N5/3722
CPC分类号： H04N3/1531 , H01L27/14831 , H04N3/1537 , H04N3/1575
摘要： There is disclosed a solid-state imaging device comprising: a column direction transfer section arranged in parallel to photosensitive element trains, and capable of transferring, in column directions opposite to each other, signal charges produced in photosensitive elements; row direction transfer sections arranged on the both end sides of the column direction transfer section, respectively, and at least one transfer order conversion section provided between the row direction transfer section on one side and the column direction transfer section. In this solid-state imaging device, there is employed a scheme such that the transfer direction of the transfer in a column direction (first field transfer) of signal charges produced from photosensitive pixels of the odd rows and the transfer direction of the transfer in a column direction (second field transfer) of signal charges produced from photosensitive pixels of the odd rows are caused to be opposite to each other, and that the transfer order is reversed by the transfer order conversion section on one side to output signal charges in a reversed transfer order. Transfer between row direction transfer devices is therefore not required.

97. 发明授权

US5105450A Charge transfer device having alternating large and small transfer electrodes 失效
标题翻译：具有交替的大型和小转移电极的充电传输装置
公开(公告)号：US5105450A
公开(公告)日：1992-04-14
申请号：US744663
申请日：1991-08-09
申请人： Tetsuo Yamada
发明人： Tetsuo Yamada
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378
CPC分类号： H04N3/1575 , H04N3/1543
摘要： There is provided a charge transfer device comprising a shift register comprised of a plurality of shift stages directly connected to each other, phase pulses for a multi-phase control pulse being delivered to the shift stages, respectively, a transfer control pulse being delivered to the shift register stage arranged at one end of the plurality of shift stages; and a transfer unit having a plurality of transfer electrodes provided in correspondence with the shift stages of the shift register, transfer pulses being delivered from the shift stages of the shift register to the transfer electrodes, respectively, to apply transfer pulses in a predetermined order from the shift stages of the shift register to the transfer electrodes of the transfer unit, respectively, to thereby sequentially transfer signal charges stored below the transfer electrodes in a predetermined direction. In this device, the transfer electrodes are such that transfer electrodes having a large electrode area and transfer electrodes having a small electrode area are arranged one after other, and that they are connected to the respective stages of the shift register in order. It is desirable that the area relationship of the transfer electrodes is such that the ratio between transfer electrodes having a large electrode area and a small electrode area is set to a sufficiently large value. This charge transfer device is combined with a photoelectric conversion unit comprised of a plurality of photosensitive elements to constitute a solid state image pickup device.

98. 发明授权

US4907050A Solid-state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US4907050A
公开(公告)日：1990-03-06
申请号：US71665
申请日：1987-07-09
申请人： Tetsuo Yamada
发明人： Tetsuo Yamada
IPC分类号： H01L27/148 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372
CPC分类号： H01L27/14831
摘要： A solid-state image pickup device includes a semiconductor substrate of a first conductivity type, and a photoelectric cell, including an impurity region of a second conductivity type formed on the semiconductor substrate, to produce a signal charge corresponding to the quantity of incident light at a first junction surface between the impurity region of the second conductivity type and the semiconductor substrate. The device further includes an impurity region of the first conductivity type formed on the semiconductor substrate to effect isolation between the impurity regions of the second conductivity type, and a charge transfer unit for transferring the signal charge produced in the photoelectric cell. This device is characterized in that the impurity concentration of the impurity region of the second conductivity type is high in the vicinity of at least a portion of a second junction surface between the impurity region of the second conductivity type and the impurity region of the first conductivity type, and is low in a range spaced from the second junction surface. With the device thus configured, under a greatly reverse-biased condition due to charge transportation, the high concentration portion of the impurity region of the second conductivity type is depleted, and under a small reverse-biased condition at the time of the charge accumulation, the high concentration portion is placed in a non-depleted condition. This permits the junction capacity at the time of the charge accumulation to be large, thus enabling realization of a solid-state image pickup device having less afterimage.
摘要翻译：固态摄像装置包括第一导电类型的半导体衬底和形成在半导体衬底上的第二导电类型杂质区的光电池，以产生与入射光的量相对应的信号电荷第二导电类型的杂质区域和半导体衬底之间的第一结表面。该器件还包括在半导体衬底上形成的第一导电类型的杂质区域，以实现第二导电类型的杂质区域之间的隔离，以及用于转移在光电池中产生的信号电荷的电荷转移单元。该装置的特征在于，第二导电类型的杂质区域的杂质浓度在第二导电类型的杂质区域和第一导电性的杂质区域之间的第二结合面的至少一部分附近类型，并且在与第二接合表面间隔开的范围内是低的。由于这样配置的器件，由于电荷传输，在极大的反向偏置状态下，第二导电类型的杂质区的高浓度部分被耗尽，并且在电荷累积时的小反向偏置条件下，高浓度部分处于非耗尽状态。这允许电荷累积时的结电容量大，从而能够实现具有较少余像的固态图像拾取装置。

99. 发明授权

US4897728A Charge transfer device for solid state image pickup apparatus and method of driving the same 失效
标题翻译：固态摄像装置的电荷转移装置及其驱动方法
公开(公告)号：US4897728A
公开(公告)日：1990-01-30
申请号：US254178
申请日：1988-10-06
申请人： Tetsuo Yamada
发明人： Tetsuo Yamada
IPC分类号： H04N5/345 , H04N5/3722
CPC分类号： H04N3/1531 , H04N3/1562
摘要： The solid state image pickup apparatus comprises photosensitive element columns (1) made up of a plurality of photosensitive elements (I) and charge storage/transfer devices each having a cyclic transfer path (12) including a plurality of loop-linked transfer stages (8, 9, 10 and 11) for transferring and storing signal charges outputted by the photosensitive element column (1). The cyclic transfer path (12) can freely rearrange the order of outputted signal charges by controlling timings at which signal charges are received by or transmitted from the cyclic transfer path. Further, the apparatus includes a parallel transfer device (17) in each cyclic transfer path (12) which can simultaneously transfer signal charges stored in a predetermined one of transfer stages (8 and 9) to other transfer stages (9 and 8) through the cyclic transfer path (12) for the purpose of reversing the arrangement order of the signal charges.

100. 发明授权

US4721989A CCD with transfer channel at lower potential than supply channel 失效
标题翻译：传输通道的CCD的电位低于供电通道
公开(公告)号：US4721989A
公开(公告)日：1988-01-26
申请号：US57304
申请日：1987-06-04
申请人： Tetsuo Yamada
发明人： Tetsuo Yamada
IPC分类号： H01L21/339 , H01L27/148 , H01L29/10 , H01L29/76 , H01L29/762 , H01L29/772 , H04N5/335 , H04N5/341 , H04N5/3728 , H01L29/78 , G11C19/28 , H01L27/14 , H01L31/00
CPC分类号： H01L29/1062 , H01L27/14831
摘要： A solid-state image sensing device has a plurality of first CCDs for transferring a charge along the column direction and a second CCD for transferring the charge supplied from the first CCDs along the row direction. The first and second CCDs have n-type first transfer channels and an n-type second transfer channel which are formed on a p-type semiconductor body. The p-type semiconductor body has a first region contacting the bottom surface of the first transfer channels and a second region contacting the bottom surface of the second transfer channel. An impurity concentration of the second region is lower than that of the first region.
摘要翻译：固体摄像装置具有多个用于沿列方向传送电荷的第一CCD和用于传送沿着行方向从第一CCD提供的电荷的第二CCD。第一和第二CCD具有形成在p型半导体本体上的n型第一传输沟道和n型第二传输沟道。 p型半导体本体具有接触第一输送通道的底表面的第一区域和与第二转移通道的底表面接触的第二区域。第二区域的杂质浓度低于第一区域的杂质浓度。

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