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91. 发明申请

US20120032088A1 DETECTION APPARATUS AND RADIATION DETECTION SYSTEM 失效
标题翻译：检测装置和辐射检测系统
公开(公告)号：US20120032088A1
公开(公告)日：2012-02-09
申请号：US13195535
申请日：2011-08-01
申请人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe , Jun Kawanabe , Kentaro Fujiyoshi , Hiroshi Wayama
发明人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe , Jun Kawanabe , Kentaro Fujiyoshi , Hiroshi Wayama
IPC分类号： G01T1/24 , G01J1/42 , G01T1/16
CPC分类号： G01T1/242 , G01T1/24 , H01L27/14636 , H01L27/14663 , H01L31/113 , H04N5/32
摘要： A stacked-type detection apparatus including a plurality of pixels arranged at small intervals is configured to have low capacitance associated with signal lines and/or driving lines. With this novel configuration, small time constant and high-speed driving capability can be achieved in the signal lines and/or driving lines. The plurality of pixels in the detection apparatus are arranged in a row direction and a column direction on an insulating substrate. Each pixel includes a conversion element and a switch element, the conversion element is disposed above the switch element. A driving line disposed below the conversion elements is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. The signal line includes a conductive layer embedded in an insulating member, the insulating member is disposed in a layer lower than an uppermost surface portion of the driving line.
摘要翻译：包括以小间隔排列的多个像素的层叠型检测装置被配置为具有与信号线和/或驱动线相关联的低电容。利用这种新颖的结构，可以在信号线路和/或驱动线路中实现小的时间常数和高速驱动能力。检测装置中的多个像素在绝缘基板上排列成行方向和列方向。每个像素包括转换元件和开关元件，转换元件设置在开关元件上方。设置在转换元件下方的驱动线连接到沿行方向布置的开关元件，并且信号线连接到沿列方向布置的开关元件。信号线包括嵌入在绝缘构件中的导电层，绝缘构件设置在比驱动线的最上表面部分低的层中。

92. 发明授权

US07723136B2 Imaging apparatus, radiation imaging apparatus, and manufacturing methods therefor 有权
标题翻译：成像装置，放射线成像装置及其制造方法
公开(公告)号：US07723136B2
公开(公告)日：2010-05-25
申请号：US12273602
申请日：2008-11-19
申请人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
发明人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/1462 , H01L27/14632 , H01L27/14665 , H01L27/14685 , H01L27/14687 , H01L27/14692
摘要： An imaging apparatus is provided in which a plurality of pixels, each having a conversion element and a thin-film transistor, are arranged in a two-dimensional fashion on an insulating substrate; the photoelectric conversion element is arranged over the thin-film transistor, with an insulating film, which serves as an interlayer insulating film, inserted between the conversion element and the thin-film transistor; and by way of a contact hole portion provided in the insulating film, the source electrode or the drain electrode of the thin-film transistor and the photoelectric conversion element are connected with each other. The imaging apparatus has a pixel in which the contact hole portion is removed through a laser-beam irradiation so that the connection portion between the conversion element and a conductive layer, which serves as the source electrode or the drain electrode of the thin-film transistor, is discontinued.
摘要翻译：提供了一种成像装置，其中具有转换元件和薄膜晶体管的多个像素以二维方式布置在绝缘基板上; 光电转换元件布置在薄膜晶体管的上方，并且插入在转换元件和薄膜晶体管之间的绝缘膜，其用作层间绝缘膜; 并且通过设置在绝缘膜中的接触孔部分，薄膜晶体管的源电极或漏电极和光电转换元件彼此连接。成像装置具有像素，其中通过激光束照射去除接触孔部分，使得转换元件和用作薄膜晶体管的源电极或漏电极的导电层之间的连接部分，停产。

93. 发明申请

US20100001194A1 RADIATION DETECTION APPARATUS AND RADIOGRAPHIC IMAGING SYSTEM 有权
标题翻译：辐射检测装置和放射成像系统
公开(公告)号：US20100001194A1
公开(公告)日：2010-01-07
申请号：US12493776
申请日：2009-06-29
申请人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe
发明人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe
IPC分类号： G01T1/24
CPC分类号： G01T1/2018
摘要： A radiation detection apparatus comprises a plurality of pixels each including a conversion element which converts incident radiation into a charge, a switching element which transfers the charge, and an interlayer insulation film disposed between the conversion element and the switching element, a gate line to drive the switching element, and a signal line located to intersect with the gate line and configured to read out the charge transferred from the switching element, wherein Ca≧ε0×ε×S/d and 7d≦P/2 is satisfied, where P is a pixel pitch, Ca is a sum total of coupling capacitances between the signal line and the gate line, S is an overlapping area of the signal line and the conversion element, d is a thickness of the interlayer insulation film, ε is a relative dielectric constant of the interlayer insulation film, and ε0 is a vacuum dielectric constant.
摘要翻译：辐射检测装置包括多个像素，每个像素包括将入射辐射转换为电荷的转换元件，传送电荷的开关元件和设置在转换元件和开关元件之间的层间绝缘膜，驱动栅极线所述开关元件和位于与所述栅极线相交并且被配置为读出从所述开关元件传送的电荷的信号线，其中满足Ca> = epsilonxSexS / d和7d <= P / 2，其中P是像素间距，Ca是信号线和栅极线之间的耦合电容的总和，S是信号线和转换元件的重叠面积，d是层间绝缘膜的厚度，ε是相对介电常数层间绝缘膜，ε0为真空介电常数。

94. 发明授权

US07642517B2 Radiation imaging apparatus and radiation imaging system 失效
标题翻译：辐射成像设备和放射成像系统
公开(公告)号：US07642517B2
公开(公告)日：2010-01-05
申请号：US12210839
申请日：2008-09-15
申请人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe
发明人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe
IPC分类号： G01T1/24 , H01L25/065
CPC分类号： H01L27/14643 , G01T1/2018 , G01T1/24 , H01L27/14603 , H01L27/14632 , H01L27/14663 , H01L27/14692 , H01L31/105
摘要： A radiation imaging apparatus has a pixel region arranged on a substrate. Arranged in a matrix pattern in the pixel region are pixels, each pixel including a conversion element which converts radiation to electrical charges, and a switching element which is connected to the conversion element therein. The radiation imaging apparatus has, in a region outside the pixel region of the substrate, an intersection at which a signal line connected to the switching element and a bias line connected to the conversion element intersects. At the intersection, a semiconductor layer is arranged between the signal line and the bias line, and a carrier blocking portion is arranged between the semiconductor layer and the signal line.
摘要翻译：放射线成像装置具有布置在基板上的像素区域。在像素区域中以矩阵图案排列的是像素，每个像素包括将辐射转换成电荷的转换元件，以及连接到转换元件的开关元件。放射线摄像装置在基板的像素区域外的区域中具有与开关元件连接的信号线和与转换元件连接的偏置线交叉的交点。在交叉点处，在信号线和偏置线之间设置半导体层，并且在半导体层和信号线之间配置载流子阻挡部。

95. 发明授权

US07468531B2 Imaging apparatus and radiation imaging apparatus 失效
标题翻译：成像设备和放射成像设备
公开(公告)号：US07468531B2
公开(公告)日：2008-12-23
申请号：US11625412
申请日：2007-01-22
申请人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
发明人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/1462 , H01L27/14632 , H01L27/14665 , H01L27/14685 , H01L27/14687 , H01L27/14692
摘要： An imaging apparatus is provided in which a plurality of pixels, each having a conversion element and a thin-film transistor, are arranged in a two-dimensional fashion on an insulating substrate; the photoelectric conversion element is arranged over the thin-film transistor, with an insulating film, which serves as an interlayer insulating film, inserted between the conversion element and the thin-film transistor; and by way of a contact hole portion provided in the insulating film, the source electrode or the drain electrode of the thin-film transistor and the photoelectric conversion element are connected with each other. The imaging apparatus has a pixel in which the contact hole portion is removed through a laser-beam irradiation so that the connection portion between the conversion element and a conductive layer, which serves as the source electrode or the drain electrode of the thin-film transistor, is discontinued.
摘要翻译：提供了一种成像装置，其中具有转换元件和薄膜晶体管的多个像素以二维方式布置在绝缘基板上; 光电转换元件布置在薄膜晶体管的上方，并且插入在转换元件和薄膜晶体管之间的绝缘膜，其用作层间绝缘膜; 并且通过设置在绝缘膜中的接触孔部分，薄膜晶体管的源电极或漏电极和光电转换元件彼此连接。成像装置具有像素，其中通过激光束照射去除接触孔部分，使得转换元件和用作薄膜晶体管的源电极或漏电极的导电层之间的连接部分，停产。

96. 发明授权

US07116319B2 Image forming apparatus and radiation detection system 失效
公开(公告)号：US07116319B2
公开(公告)日：2006-10-03
申请号：US10440229
申请日：2003-05-19
申请人： Minoru Watanabe , Chiori Mochizuki
发明人： Minoru Watanabe , Chiori Mochizuki
IPC分类号： G09G5/00
CPC分类号： H01L27/146 , G09G3/3648 , G09G2340/0414 , G09G2340/0421 , H04N5/32
摘要： An image forming apparatus is provided, which enables various kinds of drive in accordance with purposes. The image forming apparatus includes photoelectric conversion elements and TFT units which are arranged in a matrix shape, a signal processing circuit unit (for processing a signal from each photoelectric conversion element, and a gate driver circuit unit for controlling connections among the photoelectric conversion elements. The gate driver circuit unit is connected to the TFT units through gate lines. The gate lines include one that is connected to the TFT units in each row, and the gate lines include one that is connected to the TFT units in plural rows.

97. 发明授权

US07098481B2 Semiconductor device 有权
公开(公告)号：US07098481B2
公开(公告)日：2006-08-29
申请号：US10969875
申请日：2004-10-22
申请人： Minoru Watanabe , Noriyuki Kaifu , Chiori Mochizuki
发明人： Minoru Watanabe , Noriyuki Kaifu , Chiori Mochizuki
IPC分类号： H01L29/04
CPC分类号： G02F1/136204 , H01L27/0288 , H01L27/124 , H01L27/1255 , H01L27/14609
摘要： In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process and improve a manufacture yield.

98. 发明授权

US06623990B2 Method for producing semiconductor apparatus 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US06623990B2
公开(公告)日：2003-09-23
申请号：US09899284
申请日：2001-07-06
申请人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
发明人： Minoru Watanabe , Chiori Mochizuki , Takamasa Ishii
IPC分类号： H01L2100
CPC分类号： H04N5/32 , G02F1/136204 , G02F1/136259 , G09G3/3648 , G09G2330/08
摘要： In order to prevent a decrease of yield due to a discontinuity of a wire or a short between upper and lower metal wires in production of a TFT matrix panel having pixel capacitors and TFTs and produce the TFT panel in a good yield without decrease of an aperture rate of the pixel capacitor portions even with increase in the size of the panel and with micronization of the pixel pattern, ends of bias lines on the opposite side to connection to a common electrode driver for application of bias are electrically connected to each other by a redundant wire.
摘要翻译：为了防止在具有像素电容器和TFT的TFT矩阵面板的生产中由于导线不连续或上下金属线之间的短路引起的产量降低，并且以不降低孔径的方式制造TFT面板像素电容器部分的速率即使随着面板尺寸的增加并且像素图案的微小化，与连接到用于施加偏压的公共电极驱动器相反的一侧的偏置线的端部彼此电连接冗余电线。

99. 发明授权

US08866093B2 Detection device manufacturing method, detection device, and detection system 有权
标题翻译：检测装置制造方法，检测装置和检测系统
公开(公告)号：US08866093B2
公开(公告)日：2014-10-21
申请号：US13477472
申请日：2012-05-22
申请人： Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
发明人： Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
IPC分类号： G01T1/24 , H01L27/146
CPC分类号： H01L27/14687 , H01L27/14609 , H01L27/1463 , H01L27/14676
摘要： In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.
摘要翻译：在制造包括排列在基板上的多个像素的检测装置的方法中，每个像素包括开关元件和转换元件，转换元件包括设置在开关元件上方的电极上的杂质半导体层，该杂质半导体层被隔离并且由连接到开关元件的透明导电氧化物制成，并且还包括设置在开关元件和电极之间的由有机材料制成并且覆盖开关的层间绝缘层元件，该方法包括各自由无机材料制成的绝缘构件，并设置成覆盖与层间绝缘层接触的相邻的两个电极之间的层间绝缘层，并且形成覆盖绝缘构件和电极的杂质半导体膜，并成为杂质半导体层。

100. 发明授权

US08759785B2 Detection apparatus and radiation detection system 失效
标题翻译：检测仪器和放射线检测系统
公开(公告)号：US08759785B2
公开(公告)日：2014-06-24
申请号：US13195535
申请日：2011-08-01
申请人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe , Jun Kawanabe , Kentaro Fujiyoshi , Hiroshi Wayama
发明人： Takamasa Ishii , Chiori Mochizuki , Minoru Watanabe , Jun Kawanabe , Kentaro Fujiyoshi , Hiroshi Wayama
IPC分类号： G01T1/24
CPC分类号： G01T1/242 , G01T1/24 , H01L27/14636 , H01L27/14663 , H01L31/113 , H04N5/32
摘要： A stacked-type detection apparatus including a plurality of pixels arranged at small intervals is configured to have low capacitance associated with signal lines and/or driving lines. With this novel configuration, small time constant and high-speed driving capability can be achieved in the signal lines and/or driving lines. The plurality of pixels in the detection apparatus are arranged in a row direction and a column direction on an insulating substrate. Each pixel includes a conversion element and a switch element, the conversion element is disposed above the switch element. A driving line disposed below the conversion elements is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. The signal line includes a conductive layer embedded in an insulating member, the insulating member is disposed in a layer lower than an uppermost surface portion of the driving line.
摘要翻译：包括以小间隔排列的多个像素的层叠型检测装置被配置为具有与信号线和/或驱动线相关联的低电容。利用这种新颖的结构，可以在信号线路和/或驱动线路中实现小的时间常数和高速驱动能力。检测装置中的多个像素在绝缘基板上排列成行方向和列方向。每个像素包括转换元件和开关元件，转换元件设置在开关元件上方。设置在转换元件下方的驱动线连接到沿行方向布置的开关元件，并且信号线连接到沿列方向布置的开关元件。信号线包括嵌入在绝缘构件中的导电层，绝缘构件设置在比驱动线的最上表面部分低的层中。

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