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91. 发明授权

US09171805B2 Substrate identification circuit and semiconductor device 有权
公开(公告)号：US09171805B2
公开(公告)日：2015-10-27
申请号：US11054953
申请日：2005-02-11
申请人： Kiyoshi Kato , Shunpei Yamazaki
发明人： Kiyoshi Kato , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/76 , H01L23/544 , H01L27/12
CPC分类号： H01L23/544 , H01L27/12 , H01L27/1214 , H01L2223/54433 , H01L2223/5444 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Provided is a substrate identification circuit that generates a numeric value, whose duplication is difficult and which is proper to a substrate, at low cost and a semiconductor device having such a substrate identification circuit. A substrate identification circuit 304 is produced by utilizing variations in characteristics among TFTs formed on a substrate having an insulating surface. The substrate identification circuit 304 includes a plurality of proper bit generating circuits, each of which is constructed from a plurality of TFTs and outputs a one-bit random number based on variations in characteristics among the plurality of TFTs. The substrate identification circuit generates a numeric value proper to the substrate using the one-bit random number. The substrate identification circuit may include a circuit that makes a judgment by comparing the numeric value proper to the substrate with an identification number inputted from the outside.

92. 发明授权

US09136530B2 Energy storage device and manufacturing method thereof 有权
标题翻译：储能装置及其制造方法
公开(公告)号：US09136530B2
公开(公告)日：2015-09-15
申请号：US13113217
申请日：2011-05-23
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01M4/04 , H01M4/1395 , H01M4/525 , H01G11/24 , H01M4/52 , H01M4/24 , H01G11/28 , H01G11/26 , H01M4/38
CPC分类号： H01M4/1395 , H01G11/24 , H01G11/26 , H01G11/28 , H01M4/04 , H01M4/0404 , H01M4/0428 , H01M4/242 , H01M4/386 , H01M4/52 , H01M4/521 , H01M4/523 , H01M4/525 , Y02E60/122 , Y02P70/54 , Y10T29/49108
摘要： An energy storage device whose discharge capacity can be improved and a method for manufacturing the energy storage device are provided. A method for manufacturing an energy storage device, in which a metal element is dispersed over a current collector, and a crystalline silicon layer including a whisker is formed as an active material layer over the surface of the current collector on which the metal element is dispersed by low pressure chemical vapor deposition (LPCVD) in which heating is performed using a deposition gas containing silicon. Having whiskers in the active material layer as described above, the surface area of the active material layer is increased; thus, the discharge capacity of the energy storage device can be increased.
摘要翻译：能够提高放电容量的能量储存装置和能量储存装置的制造方法。在金属元素分散的集电体的表面上形成作为活性物质层的制造其中金属元素分散在集电体上的能量存储装置的方法和包括晶须的晶体硅层通过低压化学气相沉积（LPCVD），其中使用含硅的沉积气体进行加热。如上所述在活性物质层中具有晶须，活性物质层的表面积增加; 从而可以提高储能装置的放电容量。

93. 发明授权

US09123912B2 Light-emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US09123912B2
公开(公告)日：2015-09-01
申请号：US13420030
申请日：2012-03-14
申请人： Shunpei Yamazaki , Nobuharu Ohsawa
发明人： Shunpei Yamazaki , Nobuharu Ohsawa
IPC分类号： H01L51/56 , H01L51/52 , H01L51/50
CPC分类号： H01L51/5265 , H01L51/5036 , H01L51/56 , H01L2251/5315 , H01L2251/5361 , H01L2251/558
摘要： To provide a method for manufacturing light-emitting devices with different emission colors using EL layers formed using the same apparatus and condition, and a light-emitting device with high added value. A substrate in which a transparent conductive layer is formed in advance on a surface over which an EL layer is to be formed and another substrate in which a transparent conductive layer with a thickness different from that of the transparent conductive layer are prepared, and EL layers are formed over the substrates using the same apparatus and condition. Thus, even when the EL layers are formed using the same apparatus and condition, optical path lengths of the substrates can be different.
摘要翻译：为了提供一种使用使用相同装置和条件形成的EL层来制造具有不同发射颜色的发光器件的方法和具有高附加值的发光器件。预先在要形成EL层的表面上形成透明导电层的衬底和其中制备具有与透明导电层的厚度不同的透明导电层的另一衬底，以及EL层使用相同的装置和条件在基板上形成。因此，即使使用相同的装置和条件形成EL层，也可以使基板的光路长度不同。

94. 发明授权

US09117415B2 Display device and method for operating the same 有权
标题翻译：显示装置及其操作方法
公开(公告)号：US09117415B2
公开(公告)日：2015-08-25
申请号：US11115263
申请日：2005-04-27
申请人： Shunpei Yamazaki , Jun Koyama , Masaaki Hiroki , Munehiro Azami , Mitsuaki Osame , Yutaka Shionoiri , Shou Nagao
发明人： Shunpei Yamazaki , Jun Koyama , Masaaki Hiroki , Munehiro Azami , Mitsuaki Osame , Yutaka Shionoiri , Shou Nagao
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3651 , G09G3/3688 , G09G2310/027 , G09G2320/0271 , G09G2320/0276 , G09G2320/0285
摘要： A display device comprises a display panel composed of a pixel portion in which a plurality of TFTs are arranged in matrix, a source driver, and a gate driver, an image signal processing circuit for processing an image signal input from an external, and a control circuit for controlling the display panel and the image signal processing circuit. The image signal processing circuit corrects the image signal on the basis of a correction table. By feeding the display panel with the corrected image signal, the display device can provide a good quality image.
摘要翻译：显示装置包括由矩阵状的多个TFT排列的像素部分，源极驱动器和栅极驱动器构成的显示面板，用于处理从外部输入的图像信号的图像信号处理电路，以及控制部用于控制显示面板和图像信号处理电路的电路。图像信号处理电路基于校正表来校正图像信号。通过向显示面板馈送校正后的图像信号，显示装置可以提供高质量的图像。

95. 发明授权

US09112224B2 Energy storage device and method for manufacturing the same 有权
标题翻译：储能装置及其制造方法
公开(公告)号：US09112224B2
公开(公告)日：2015-08-18
申请号：US13163879
申请日：2011-06-20
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01M4/38 , H01G11/06 , H01G11/50 , H01M4/134 , H01M4/36 , H01M4/40 , H01M4/04 , H01M10/052 , H01M4/02
CPC分类号： H01M4/386 , H01G11/06 , H01G11/30 , H01G11/50 , H01G11/66 , H01G11/76 , H01M4/0404 , H01M4/0419 , H01M4/0426 , H01M4/0471 , H01M4/134 , H01M4/366 , H01M4/405 , H01M4/661 , H01M10/052 , H01M2004/021 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： Provided are an energy storage device including an electrode in which lithium is introduced into a silicon layer and a method for manufacturing the energy storage device. A silicon layer is formed over a current collector, a solution including lithium is applied on the silicon layer, and heat treatment is performed thereon; thus, at least lithium can be introduced into the silicon layer. By using the solution including lithium, even when the silicon layer includes a plurality of silicon microparticles, the solution including lithium can enter a space between the microparticles and lithium can be introduced into the silicon microparticles which are in contact with the solution including lithium. Moreover, even when the silicon layer is a thin silicon film or includes a plurality of whiskers or whisker groups, the solution can be uniformly applied; accordingly, lithium can be included in silicon easily.
摘要翻译：提供了一种能量存储装置，其包括将锂引入硅层的电极和能量存储装置的制造方法。在集电器上形成硅层，将包含锂的溶液施加在硅层上，对其进行热处理; 因此，至少可以将锂引入到硅层中。通过使用包含锂的溶液，即使当硅层包括多个硅微粒时，包含锂的溶液可以进入微粒之间的空间，并且可以将锂引入与包括锂的溶液接触的硅微粒中。此外，即使当硅层是薄的硅膜或者包括多个晶须或晶须基团时，也可以均匀地施加溶液; 因此，锂可以容易地包含在硅中。

96. 发明授权

US09112036B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09112036B2
公开(公告)日：2015-08-18
申请号：US13482398
申请日：2012-05-29
申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shunpei Yamazaki
发明人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shunpei Yamazaki
IPC分类号： H01L21/8232 , H01L29/786
CPC分类号： H01L29/7869
摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.
摘要翻译：提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。在包括具有沟道形成区域的氧化物半导体膜的晶体管的制造方法中，在氧化物半导体膜上形成包含金属元素的绝缘膜，以及通过注入在绝缘膜上添加的掺杂剂的低电阻区域包含的方法形成在氧化物半导体膜中。沟道形成区域位于沟道长度方向的低电阻区域之间。

97. 发明授权

US09099395B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09099395B2
公开(公告)日：2015-08-04
申请号：US13366933
申请日：2012-02-06
申请人： Masayuki Sakakura , Shunpei Yamazaki
发明人： Masayuki Sakakura , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L27/28 , H01L29/786 , H01L27/12 , H01L29/423
CPC分类号： H01L29/78645 , H01L27/12 , H01L27/124 , H01L27/283 , H01L29/42384 , H01L29/78696
摘要： It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.
摘要翻译：本发明的目的是提供一种具有新的多重结构的晶体管，其中提高了操作特性和可靠性。在具有多重结构的晶体管中，其包括彼此电连接的两个栅电极和包括在源区和漏区之间串联连接的两个沟道区的半导体层，并且在两者之间形成高浓度杂质区渠道区域; 与源极区域相邻的沟道区域的沟道长度比与漏极区域相邻的沟道区域的沟道长度长。

98. 发明授权

US09093328B2 Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof 有权
标题翻译：具有结晶区域的氧化物半导体的半导体装置及其制造方法
公开(公告)号：US09093328B2
公开(公告)日：2015-07-28
申请号：US12938533
申请日：2010-11-03
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
IPC分类号： H01L29/12 , H01L27/12 , H01L29/786 , H01L21/02
CPC分类号： H01L27/1225 , H01L21/02603 , H01L27/0883 , H01L27/1251 , H01L27/127 , H01L27/1288 , H01L29/045 , H01L29/24 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.
摘要翻译：晶体管使用本征或基本上固有的并且包括氧化物半导体层的表面部分中的结晶区域的氧化物半导体层。使用从氧化物半导体去除作为电子给体（供体）的杂质并且具有比硅半导体更大的能隙的本征或本质上的本征半导体。可以通过控制一对导电膜的电位来控制晶体管的电特性，所述一对导电膜相对于氧化物半导体层彼此相对设置，每个具有布置在其间的绝缘膜，使得沟道的位置确定在氧化物半导体层中形成的氧化物半导体层。

99. 发明授权

US09048203B2 Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor 有权
公开(公告)号：US09048203B2
公开(公告)日：2015-06-02
申请号：US13177647
申请日：2011-07-07
申请人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
发明人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
IPC分类号： H01L33/00 , H01L27/32 , H01L21/67 , H01L51/50 , H01L51/56 , H01L51/52
CPC分类号： H01L27/3211 , H01L21/67207 , H01L27/3209 , H01L27/3218 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L27/3281 , H01L51/5036 , H01L51/504 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

100. 发明授权

US09047840B2 Display device and electronic appliance 有权
标题翻译：显示设备和电子设备
公开(公告)号：US09047840B2
公开(公告)日：2015-06-02
申请号：US13159593
申请日：2011-06-14
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： G06F3/038 , G09G5/00 , G09G3/36 , G09G3/34
CPC分类号： G09G3/3666 , G09G3/3413 , G09G3/342 , G09G3/3659 , G09G2310/0235 , G09G2310/024 , G09G2310/0297 , G09G2320/0242 , G09G2360/16
摘要： Included are a display panel including first to third pixel regions and a driver circuit; a backlight portion divided into a first light source region where light is emitted in response to input of a video signal to the first pixel region, a second light source region where light is emitted in response to input of a video signal to the second pixel region, and a third light source region where light is emitted in response to input of a video signal to the third pixel region; a video signal selection circuit used to supply the video signals from plural memory circuits to the driver circuit; a control circuit that supplies a control signal for controlling the driver circuit; a sequence determination circuit that supplies a backlight control signal and a selection signal; and a random number generation circuit used for selection from colors in the sequence determination circuit.
摘要翻译：包括包括第一至第三像素区域和驱动器电路的显示面板; 响应于对第一像素区域的视频信号的输入而被分成发射光的第一光源区域的背光部分，响应于向第二像素区域输入视频信号而发光的第二光源区域以及响应于对第三像素区域的视频信号的输入而发光的第三光源区域; 视频信号选择电路，用于将来自多个存储电路的视频信号提供给驱动电路; 控制电路，其提供用于控制所述驱动电路的控制信号; 序列确定电路，其提供背光控制信号和选择信号; 以及用于从序列确定电路中的颜色中选择的随机数生成电路。

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