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91. 发明申请

US20110101301A1 LIGHT EMITTING DEVICE WITH A COUPLED QUANTUM WELL STRUCTURE 审中-公开
标题翻译：具有耦合量子阱结构的发光器件
公开(公告)号：US20110101301A1
公开(公告)日：2011-05-05
申请号：US12916218
申请日：2010-10-29
申请人： You-Da Lin , Arpan Chakraborty , Shuji Nakamura , Steven P. DenBaars
发明人： You-Da Lin , Arpan Chakraborty , Shuji Nakamura , Steven P. DenBaars
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/32
摘要： A light emitting device with a coupled quantum well structure in an active region. The coupled quantum well structure may include two or more wells are separated by one or more mini-barriers, and the wells and mini-barriers together are sandwiched by barriers. The coupled quantum well structure provides almost the same effect as a wide quantum well, due to the coupling of the wavefunctions through the mini-barrier. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device.
摘要翻译：一种在有源区域中具有耦合的量子阱结构的发光器件。耦合的量子阱结构可以包括两个或更多个孔被一个或多个微型屏障隔开，并且阱和微型屏障一起夹在屏障之间。耦合量子阱结构提供了与宽量子阱几乎相同的效果，这是由于通过微型屏障的波函数的耦合。发光器件可以是非极性，半极性或极性（Al，Ga，In）N基发光器件。

92. 发明授权

US07917688B2 Flash memory module, storage apparatus using flash memory module as recording medium, and address translation table verification method for flash memory module 有权
标题翻译：闪存模块，使用闪存模块作为记录介质的存储设备，以及闪存模块的地址转换表验证方法
公开(公告)号：US07917688B2
公开(公告)日：2011-03-29
申请号：US12003906
申请日：2008-01-03
申请人： Katsuya Tanaka , Shuji Nakamura
发明人： Katsuya Tanaka , Shuji Nakamura
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F1/324 , G06F1/3225 , G06F1/3275 , G06F1/3296 , G06F3/0625 , G06F3/0634 , G06F3/0688 , G06F12/0246 , G06F12/1027 , Y02D10/126 , Y02D10/14 , Y02D10/154 , Y02D10/172 , Y02D50/20
摘要： An purpose of the invention is to immediately return the operation in a flash memory module from low power consumption mode to regular mode.A flash memory controller having memory that stores an address translation table for translating between a logical page address and a physical page address in the flash memory chip controls regular mode and low power consumption mode of operating at lower power consumption than in regular mode by halting operation, or decreasing power supply voltage or lowering operating frequency. A flash memory module having the flash memory controller verifies data in the address translation table while low power consumption mode is set.
摘要翻译：本发明的目的是立即将闪存模块中的操作从低功耗模式返回到常规模式。具有存储器的存储器，其存储用于在闪速存储器芯片中的逻辑页面地址和物理页面地址之间进行转换的地址转换表，通过停止操作来控制以比常规模式低的功耗操作的常规模式和低功耗模式，或降低电源电压或降低工作频率。具有闪速存储器控制器的闪存模块在设置低功耗模式的同时对地址转换表中的数据进行验证。

93. 发明申请

US20110004785A1 STORAGE SYSTEM AND CONTROL METHOD OF STORAGE SYSTEM 有权
公开(公告)号：US20110004785A1
公开(公告)日：2011-01-06
申请号：US12880639
申请日：2010-09-13
申请人： Masanori TAKADA , Shuji Nakamura , Kentaro Shimada
发明人： Masanori TAKADA , Shuji Nakamura , Kentaro Shimada
IPC分类号： G06F11/20
CPC分类号： G06F11/2092 , G06F11/0724 , G06F11/0727 , G06F11/0772 , G06F11/079 , G06F11/0793 , G06F11/2007
摘要： A fault-tolerant storage system is provided. The storage system is composed of a controller having a plurality of processors and other units. When an error occurs in any one of the components in the controller, the storage system cuts off an I/O path of the controller, specifies the failed component in the cutoff status, and invalidates the failed component. After invalidating the failed component, the storage system determines whether it is operable only with the normal components, cancels (releases) the cutoff of the I/O path when it determines that it is operable, and resumes operation by rebooting.

94. 发明授权

US07847293B2 Growth of reduced dislocation density non-polar gallium nitride 有权
标题翻译：减少位错密度非极性氮化镓的生长
公开(公告)号：US07847293B2
公开(公告)日：2010-12-07
申请号：US11670332
申请日：2007-02-01
申请人： Benjamin A. Haskell , Michael D. Craven , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Benjamin A. Haskell , Michael D. Craven , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/04 , H01L31/036 , H01L21/36
CPC分类号： C30B29/406 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.
摘要翻译：非极性氮化镓（GaN）膜的横向外延生长（LEO）导致显着降低的缺陷密度。

95. 发明申请

US20100265979A1 HORIZONTAL EMITTING, VERTICAL EMITTING, BEAM SHAPED, DISTRIBUTED FEEDBACK (DFB) LASERS FABRICATED BY GROWTH OVER A PATTERNED SUBSTRATE WITH MULTIPLE OVERGROWTH 失效
标题翻译：水平发射，垂直发射，光束形状，分布式反馈（DFB）激光器通过具有多重扩展的图形基板生长
公开(公告)号：US20100265979A1
公开(公告)日：2010-10-21
申请号：US12822888
申请日：2010-06-24
申请人： Claude C.A. Weisbuch , Shuji Nakamura
发明人： Claude C.A. Weisbuch , Shuji Nakamura
IPC分类号： H01S5/20 , H01L21/20
CPC分类号： H01S5/34333 , B82Y20/00 , G02B6/1225 , H01L21/02647 , H01L33/007 , H01S5/105 , H01S5/12 , H01S5/1206 , H01S5/1215 , H01S5/1225 , H01S5/1231 , H01S5/18 , H01S5/187 , H01S5/20 , H01S5/2004 , H01S2304/12
摘要： A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more first patterned layers deposited on top of the buffer layer, wherein each of the first patterned layers is comprised of a bottom lateral epitaxial overgrowth (LEO) mask layer and a LEO nitride layer filling holes in the bottom LEO mask layer, one or more active layers formed on the first patterned layers, and one or more second patterned layers deposited on top of the active layer, wherein each of the second patterned layers is comprised of a top LEO mask layer and a LEO nitride layer filling holes in the top LEO mask layer, wherein the top and/or bottom LEO mask layers act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element or beam directing element for the active layers.
摘要翻译：使用集成光学元件的结构包括衬底，在衬底上生长的缓冲层，沉积在缓冲层顶部上的一个或多个第一图案化层，其中每个第一图案化层由底部侧向外延生长（ LEO）掩模层和LEO氮化物层填充底部LEO掩模层中的孔，形成在第一图案化层上的一个或多个有源层和沉积在有源层顶部上的一个或多个第二图案化层，其中第二个图案化层由顶部LEO掩模层和顶部LEO掩模层中的LEO氮化物层填充孔组成，其中顶部和/或底部LEO掩模层用作反射镜，光限制层，光栅，波长选择元件，光束用于有源层的成形元件或光束引导元件。

96. 发明授权

US07691658B2 Method for improved growth of semipolar (Al,In,Ga,B)N 有权
标题翻译：改善半极性（Al，In，Ga，B）N生长的方法
公开(公告)号：US07691658B2
公开(公告)日：2010-04-06
申请号：US11655573
申请日：2007-01-19
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00 , H01L29/00
CPC分类号： H01L21/02433 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译：使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。

97. 发明授权

US07682944B2 Pendeo epitaxial structures and devices 有权
标题翻译： Pendeo外延结构和器件
公开(公告)号：US07682944B2
公开(公告)日：2010-03-23
申请号：US11957154
申请日：2007-12-14
申请人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
发明人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0254 , H01L21/0265 , H01L29/2003 , H01L29/66462
摘要： A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.
摘要翻译：一种衬底，包括包括沟槽腔的沟槽横向外延生长结构，其中所述沟槽腔在所述沟槽的内表面的至少一部分上包括支撑其上的聚结Pendeo层的生长阻挡层或图案化材料。这种衬底适用于进行横向外延过度生长以形成覆盖在沟槽腔上的桥接横向过度生长层。桥接的横向过生长形成提供衬底表面，在衬底表面上，可以在其中制造微电子器件（例如激光二极管，高电子迁移率晶体管，紫外发光二极管以及低位错密度至关重要的其它器件）中生长外延层。可以形成本发明的外延衬底结构，而不需要诸如常规Pendeo外延过度生长结构中所需的深沟槽。

98. 发明申请

US20100065854A1 GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY 审中-公开
标题翻译：通过液相蒸发相外观降低离散密度和自由放置的氮化铝膜的生长和制造
公开(公告)号：US20100065854A1
公开(公告)日：2010-03-18
申请号：US12513326
申请日：2007-11-02
申请人： Derrick S. Kamber , Shuji Nakamura , James S. Speck
发明人： Derrick S. Kamber , Shuji Nakamura , James S. Speck
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B29/403 , C30B25/183 , H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： A Group III-nitride semiconductor film containing aluminum, and methods for growing this film. A film is grown by patterning a substrate, and growing the Group III-nitride semi-conductor film containing aluminum on the substrate at a temperature designed to increase the mobility of aluminum atoms to increase a lateral growth rate of the Group III-nitride semiconductor film. The film optionally includes a substrate patterned with elevated stripes separated by trench regions, wherein the stripes have a height chosen to allow the Group III-nitride semiconductor film to coalesce prior to growth from the bottom of the trenches reaching the top of the stripes, the temperature being greater than 1075° C., the Group III-nitride semiconductor film being grown using hydride vapor phase epitaxy, the stripes being oriented along a (1-100) direction of the substrate or the growing film, and a dislocation density of the grown film being less than 107 cm−2.
摘要翻译：含有铝的III族氮化物半导体膜及其生长方法。通过图案化衬底生长膜，并且在设计成在增加铝原子的迁移率以增加III族氮化物半导体膜的横向生长速率的温度下，在衬底上生长含有铝的III族氮化物半导体膜。该膜可选地包括用沟槽区域分开的高条纹图案化的衬底，其中条纹具有选择的高度，以允许III族氮化物半导体膜在从沟槽的底部到达条纹的顶部生长之前聚结，温度大于1075℃，III族氮化物半导体膜使用氢化物气相外延生长，条纹沿着衬底或生长膜的（1-100）方向取向，并且位错密度生长的薄膜小于107cm-2。

99. 发明申请

US20100052008A1 ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY WAFER OFF-AXIS CUT 失效
标题翻译：通过波形离轴切割增强氮化物发光二极管的光学极化
公开(公告)号：US20100052008A1
公开(公告)日：2010-03-04
申请号：US12364272
申请日：2009-02-02
申请人： Hisashi Masui , Hisashi Yamada , Kenji Iso , Asako Hirai , Makoto Saito , James S. Speck , Shuji Nakamura , Steven P. DenBaars
发明人： Hisashi Masui , Hisashi Yamada , Kenji Iso , Asako Hirai , Makoto Saito , James S. Speck , Shuji Nakamura , Steven P. DenBaars
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/32 , H01L33/16
摘要： An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0 and 27°.
摘要翻译：非极性III族氮化物晶片向极（-c）取向的偏轴切割导致比没有这种离轴切割的晶片更高的发光偏振比。已经确认了用于离轴切割的5°角，以提供在0和27°之间的离轴切割的任何其它检查角度的最高偏振比（0.9）。

100. 发明申请

US20100025717A1 HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING 有权
标题翻译：通过表面粗化，高效率的基于氮化镓的发光二极管
公开(公告)号：US20100025717A1
公开(公告)日：2010-02-04
申请号：US12576122
申请日：2009-10-08
申请人： Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
发明人： Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L33/60 , H01L2224/16225
摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
摘要翻译：一种基于氮化镓（GaN）的发光二极管（LED），其中通过LED的氮面（N面）提取光，并且将N面的表面粗糙化成一个或多个六边形锥体。粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。通过各向异性蚀刻使N面的表面变粗糙，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

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