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91. 发明申请

US20060081598A1 Portable blackbody furnace 有权
标题翻译：便携式黑体炉
公开(公告)号：US20060081598A1
公开(公告)日：2006-04-20
申请号：US11250386
申请日：2005-10-17
申请人： John Lin , Chau Chen , Chun Hsu , Hui Tai , Hsin Ko , Chun Lin , Chuen Liou
发明人： John Lin , Chau Chen , Chun Hsu , Hui Tai , Hsin Ko , Chun Lin , Chuen Liou
IPC分类号： F27B14/00
CPC分类号： F27B17/0016 , F27D19/00 , F27D21/0014
摘要： The present invention discloses a portable blackbody furnace comprising a metallic body, a cylindrical cavity with a tapered end in the metallic body, a shielding plate positioned at an open end of the cylindrical cavity, at least a first heaters positioned in the shielding plate, a plurality of second heaters positioned around the metallic body, and a plurality of thermometers positioned in the metallic body. Preferably, the heat capacity of the metallic body is larger than 200 Joules/K, and has radial thickness larger than 5 mm. There are grooves formed on the outer wall of the metallic body, and the second heaters are heating wires embedded inside the grooves. In addition, the flow direction of the current between two adjacent heating wires is opposite to eliminate the magnetic field generated from the current flow.
摘要翻译：本发明公开了一种便携式黑体炉，它包括金属体，在金属体中具有锥形端的圆柱形空腔，位于圆柱形空腔的开口端的屏蔽板，至少位于屏蔽板中的第一加热器，围绕金属体定位的多个第二加热器和位于金属体中的多个温度计。优选地，金属体的热容量大于200焦耳/ K，并且径向厚度大于5mm。在金属体的外壁上形成有凹槽，第二加热器是嵌入槽内的加热丝。此外，两个相邻加热丝之间的电流的流动方向是相反的，以消除由电流产生的磁场。

92. 发明授权

US06968857B2 Pressure reducing fluid regulators 有权
标题翻译：减压流体调节器
公开(公告)号：US06968857B2
公开(公告)日：2005-11-29
申请号：US10400704
申请日：2003-03-27
申请人： James Chester Hawkins , David Edwards Woollums , Neal Arthur Ackerman , Chun Lin , Harold Joe McKinney , Erik Matthew Quijano
发明人： James Chester Hawkins , David Edwards Woollums , Neal Arthur Ackerman , Chun Lin , Harold Joe McKinney , Erik Matthew Quijano
IPC分类号： G05D16/06 , G05D16/02
CPC分类号： G05D16/0686 , Y10T137/783 , Y10T137/7831
摘要： A pressure reducing fluid regulator having a housing with a flange including a plurality of ear-shaped protrusions is disclosed. Each of the protrusions includes at least one aperture configured to receive fastener such that the circumferential spacing between first and second fasteners is less than the circumferential spacing between the second fastener and a third fastener. The regulator includes a valve having a valve seat, a valve disc, a valve stem coupled to the valve disc and a valve guide that holds the valve stem. A lever having a first end coupled to the valve stem and a second end coupled to a diaphragm applies a force to the valve stem in a direction that is non-parallel to the longitudinal axis of the valve stem to cause the valve stem to frictionally engage the valve guide. The valve stem includes a stop that limits travel of the valve stem and disc toward the valve seat.
摘要翻译：公开了一种减压流体调节器，其具有具有包括多个耳状突起的凸缘的壳体。每个突起包括构造成接收紧固件的至少一个孔，使得第一和第二紧固件之间的周向间隔小于第二紧固件和第三紧固件之间的周向间隔。调节器包括具有阀座，阀盘，连接到阀盘的阀杆和保持阀杆的阀导向件的阀。具有联接到阀杆的第一端和联接到隔膜的第二端的杆在与阀杆的纵向轴线不平行的方向上向阀杆施加力，以使阀杆摩擦接合阀门导板。阀杆包括限制阀杆和盘片朝向阀座行进的止动件。

93. 发明申请

US20050112997A1 Advanced process control approach for Cu interconnect wiring sheet resistance control 失效
标题翻译： Cu互连布线电阻控制的先进工艺控制方法
公开(公告)号：US20050112997A1
公开(公告)日：2005-05-26
申请号：US10723236
申请日：2003-11-26
申请人： Chun Lin , Ai-Sen Liu , Sunny Wu , Yu-Liang Lin , Henry Lo , Mei-Sheng Zhou
发明人： Chun Lin , Ai-Sen Liu , Sunny Wu , Yu-Liang Lin , Henry Lo , Mei-Sheng Zhou
IPC分类号： B24B37/04 , B24B51/00 , G05B13/02 , H01L21/3105 , H01L21/321 , B24B49/00 , B24B1/00
CPC分类号： B24B51/00 , B24B37/042 , G05B13/024 , H01L21/31053 , H01L21/3212
摘要： A wafer based APC method for controlling an oxide (Cu, or TaN) polish step is described and combines a feed forward model that compensates for incoming wafer variations with a feed backward model which compensates for CMP variations. The method is geared toward minimizing Rs 3σ variations. A Rs target value is inputted with metrology data from previous processes that affects the width and thickness of the copper layer. A copper thickness target and polish time for the first wafer is determined. Post CMP measurement data of the first wafer is used to modify the polish rate with a disturbance factor and an updated polish time is computed for subsequent wafers. The CMP recipe for each wafer is adjusted with metrology data and post CMP measurements. The APC method is successful in controlling copper Rs variations for the 90 nm technology node and is independent of copper pattern density.
摘要翻译：描述了用于控制氧化物（Cu或TaN）抛光步骤的基于晶圆的APC方法，并且组合了用于补偿进入晶片变化的前馈模型与补偿CMP变化的馈送反向模型。该方法面向最小化Rs 3sigma变化。输入Rs目标值，其中来自先前工艺的测量数据影响铜层的宽度和厚度。确定第一晶片的铜厚度目标和抛光时间。第一晶片的CMP后测量数据被用于利用干扰因子修改抛光速率，并且为随后的晶片计算更新的抛光时间。每个晶片的CMP配方用测量数据和后CMP测量进行调整。 APC方法成功地控制了90nm技术节点的铜Rs变化，并且与铜图案密度无关。

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