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91. 发明申请

US20090267030A1 SINTERED BODY FOR VACUUM VAPOR DEPOSITION 审中-公开
标题翻译：用于真空蒸发沉积的烧结体
公开(公告)号：US20090267030A1
公开(公告)日：2009-10-29
申请号：US12096925
申请日：2006-11-13
申请人： Shigekazu Tomai , Kazuyoshi Inoue , Masahiko Fukuda
发明人： Shigekazu Tomai , Kazuyoshi Inoue , Masahiko Fukuda
IPC分类号： H01B1/08
CPC分类号： C23C14/086 , C04B35/01 , C04B35/453 , C04B35/457 , C04B35/6262 , C04B35/62695 , C04B2235/3206 , C04B2235/3284 , C04B2235/3286 , C04B2235/5436 , C04B2235/5445 , C04B2235/6585 , C04B2235/72 , C04B2235/767 , C04B2235/77 , C04B2235/786 , C04B2235/96 , C04B2235/963 , C04B2235/9653 , C23C14/30
摘要： A sintered body for vacuum vapor deposition, the sintered body being a sintered body of an oxide containing at least one cation element; the cation element having an electronegativity of 1.5 or more; and the sintered body having a surface roughness of 3 μm or less and a bulk resistance of less than 1×10−1 Ω·cm.
摘要翻译：一种用于真空气相沉积的烧结体，所述烧结体是包含至少一种阳离子元素的氧化物的烧结体; 所述阳离子元素的电负性为1.5以上; 烧结体的表面粗糙度为3μm以下，体积电阻小于1×10 -1Ω·cm。

92. 发明申请

US20090066228A1 ORGANIC ELECTROLUMINESCENCE ELEMENT 审中-公开
标题翻译：有机电致发光元件
公开(公告)号：US20090066228A1
公开(公告)日：2009-03-12
申请号：US11913272
申请日：2006-05-08
申请人： Shigekazu Tomai , Kazuyoshi Inoue , Hitoshi Kuma
发明人： Shigekazu Tomai , Kazuyoshi Inoue , Hitoshi Kuma
IPC分类号： H01J1/62
CPC分类号： H01L51/5278 , H01L51/5262
摘要： An organic electroluminescent device (1) including: a transparent electrode (12); a counter electrode (14) opposite to the transparent electrode (12); and one or more multilayered structures between the transparent electrode (12) and the counter electrode (14), the structure including two organic emitting layers (20) and (22) and an intermediate conductive layer (30) between the organic emitting layers (20) and (22), the refractive index na of the intermediate conductive layer (30) being different from the refractive index nb of at least one of the organic emitting layers by 0.25 or less, the intermediate conductive layer (30) containing an oxide containing one or more types of rare earth elements.
摘要翻译：一种有机电致发光器件（1），包括：透明电极（12）; 与所述透明电极（12）相对的对置电极（14）。以及在所述透明电极（12）和所述对电极（14）之间的一个或多个多层结构，所述结构包括在所述有机发射层（20）和所述有机发射层（20）之间的两个有机发光层（20）和（22）以及中间导电层）和（22），所述中间导电层（30）的折射率na与所述有机发光层中的至少一个的折射率nb不同，所述中间导电层（30）含有含有一种或多种类型的稀土元素。

93. 发明授权

US07393600B2 Sputtering target, sintered article, conductive film fabricated by utilizing the same, organic EL device, and substrate for use therein 有权
标题翻译：溅射靶，烧结制品，利用其制造的导电膜，有机EL器件和用于其中的衬底
公开(公告)号：US07393600B2
公开(公告)日：2008-07-01
申请号：US10456636
申请日：2003-06-09
申请人： Kazuyoshi Inoue , Hisayuki Kawamura
发明人： Kazuyoshi Inoue , Hisayuki Kawamura
IPC分类号： B32B9/00 , C23C14/00
CPC分类号： C04B35/01 , C04B35/453 , C04B35/50 , C04B2235/3224 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/77 , C04B2235/96 , C04B2235/9653 , C23C14/086 , C23C14/3414 , H01L51/0021 , H01L51/5012 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/5206 , H01L51/5215 , H01L51/5221 , Y10T428/12618
摘要： A sintered article is fabricated which contains one or more of indium oxide, zinc oxide, and tin oxide as a component thereof and contains any one or more types of metal out of hafnium oxide, tantalum oxide, lanthanide oxide, and bismuth oxide. A backing plate is attached to this sintered article to constitute a sputtering target. This sputtering target is used to fabricate a conductive film on a predetermined substrate by sputtering. This conductive film achieves a large work function while maintaining as much transparency as heretofore. This conductive film can be used to achieve an EL device or the like of improved hole injection efficiency.
摘要翻译：制造包含氧化铟，氧化锌和氧化锡作为其成分中的一种或多种的烧结制品，并且包含氧化铪，氧化钽，镧系元素氧化物和氧化铋中的任何一种或多种金属。该烧结体附着有背板，构成溅射靶。该溅射靶用于通过溅射在预定的基板上制造导电膜。该导电膜实现了大的功函数，同时保持了迄今为止的透明度。该导电膜可以用于实现改善的空穴注入效率的EL器件等。

94. 发明授权

US06998070B2 Sputtering target and transparent conductive film 有权
标题翻译：溅射靶和透明导电膜
公开(公告)号：US06998070B2
公开(公告)日：2006-02-14
申请号：US10483614
申请日：2002-05-24
申请人： Kazuyoshi Inoue , Shigeo Matsuzaki
发明人： Kazuyoshi Inoue , Shigeo Matsuzaki
IPC分类号： H01B1/08
CPC分类号： C23C14/3414 , C04B35/453 , C04B2235/3229 , C04B2235/3232 , C04B2235/3239 , C04B2235/3244 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3293 , C04B2235/3294 , C04B2235/3296 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/658 , C04B2235/77 , C04B2235/96 , Y10S428/922
摘要： A sputtering target containing a hexagonal laminar compound formed of indium oxide and zinc oxide and represented by In2O3(ZnO)m wherein m is an integer of 2 to 7 and further contains 0.01 to 1 at % of an oxide of a third element having a normal valence of 4 or more, and a transparent electrically conductive film formed therefrom. The sputtering target has a low volume resistivity and permits stable sputtering. The transparent electrically conductive film is excellent in etchability.
摘要翻译：含有由氧化铟和氧化锌形成的六方晶片状化合物并由In 2 N 3 O 3（ZnO）m表示的溅射靶，其中m为 2〜7的整数，还含有0.01〜1原子％的正常价数为4以上的第3元素的氧化物和由其形成的透明导电性膜。溅射靶具有低体积电阻率并且允许稳定的溅射。透明导电膜的蚀刻性优异。

95. 发明授权

US06689477B2 Target for transparent electroconductive film, transparent electroconductive material, transparent electroconductive glass and transparent electroconductive film 有权
标题翻译：用于透明导电膜，透明导电材料，透明导电玻璃和透明导电膜
公开(公告)号：US06689477B2
公开(公告)日：2004-02-10
申请号：US10302928
申请日：2002-11-25
申请人： Kazuyoshi Inoue
发明人： Kazuyoshi Inoue
IPC分类号： B32B1706
CPC分类号： C04B35/457 , C03C17/2453 , C03C2217/23 , C03C2217/231 , C03C2218/154 , C04B35/01 , C04B35/453 , C04B2235/3239 , C04B2235/3251 , C04B2235/3256 , C04B2235/3262 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3293 , C04B2235/763 , C04B2235/767 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9653 , C08J7/045 , C08J2369/00 , C23C14/086 , C23C14/3414 , G02F1/13439 , H01L31/022466 , H01L51/5206
摘要： The invention includes sintered products for transparent electroconductive films, which are formed into films in a stable and efficient manner through sputtering or the like, sputtering targets of the sintered products, and transparent electroconductive glass and films formed from the targets. The transparent electroconductive glass and films have good transparency, good electroconductivity and good workability into electrodes, and are therefore favorable to transparent electrodes in organic electroluminescent devices as realizing good hole injection efficiency therein. The sintered products contain constituent components of indium oxide, tin oxide and zinc oxide in specific atomic ratios of the metal atoms, and optionally contain specific metal oxides of ruthenium oxide, molybdenum oxide, vanadium oxide, etc.
摘要翻译：本发明包括用于透明导电膜的烧结产品，其通过溅射等以稳定和有效的方式形成膜，烧结产品的溅射靶和透明导电玻璃以及由靶形成的膜。透明导电玻璃和薄膜具有良好的透明性，良好的导电性和对电极的良好的可加工性，因此有利于有机电致发光器件中的透明电极，以实现其中的良好的空穴注入效率。烧结体含有金属原子的特定原子比的氧化铟，氧化锡，氧化锌的构成成分，任选含有氧化钌，氧化钼，氧化钒等的特定的金属氧化物。

96. 发明授权

US06534183B1 Target for transparent electroconductive film, transparent electroconductive material, transparent electroconductive glass, and transparent electroconductive film 有权
标题翻译：用于透明导电膜，透明导电材料，透明导电玻璃和透明导电膜
公开(公告)号：US06534183B1
公开(公告)日：2003-03-18
申请号：US09529416
申请日：2000-05-01
申请人： Kazuyoshi Inoue
发明人： Kazuyoshi Inoue
IPC分类号： B32B1706
CPC分类号： C04B35/457 , C03C17/2453 , C03C2217/23 , C03C2217/231 , C03C2218/154 , C04B35/01 , C04B35/453 , C04B2235/3239 , C04B2235/3251 , C04B2235/3256 , C04B2235/3262 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3293 , C04B2235/763 , C04B2235/767 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9653 , C08J7/045 , C08J2369/00 , C23C14/086 , C23C14/3414 , G02F1/13439 , H01L31/022466 , H01L51/5206
摘要： The invention includes sintered products for transparent electroconductive films, which are formed into films in a stable and efficient manner through sputtering or the like, sputtering targets of the sintered products, and transparent electroconductive glass and films formed from the targets. The transparent electroconductive glass and films have good transparency, good electroconductivity and good workability into electrodes, and are therefore favorable to transparent electrodes in organic electroluminescent devices as realizing good hole injection efficiency therein. The sintered products contain constituent components of indium oxide, tin oxide and zinc oxide in specific atomic ratios of the metal atoms, and optionally contain specific metal oxides of ruthenium oxide, molybdenum oxide, vanadium oxide, etc.
摘要翻译：本发明包括用于透明导电膜的烧结产品，其通过溅射等以稳定和有效的方式形成膜，烧结产品的溅射靶和透明导电玻璃以及由靶形成的膜。透明导电玻璃和薄膜具有良好的透明性，良好的导电性和对电极的良好的可加工性，因此有利于有机电致发光器件中的透明电极，以实现其中的良好的空穴注入效率。烧结体含有金属原子的特定原子比的氧化铟，氧化锡，氧化锌的构成成分，任选含有氧化钌，氧化钼，氧化钒等的特定的金属氧化物。

97. 发明授权

US08093800B2 Sputtering target, sintered article, conductive film fabricated by utilizing the same, organic EL device, and substrate for use therein 有权
标题翻译：溅射靶，烧结制品，利用其制造的导电膜，有机EL器件和用于其中的衬底
公开(公告)号：US08093800B2
公开(公告)日：2012-01-10
申请号：US12054959
申请日：2008-03-25
申请人： Kazuyoshi Inoue , Hisayuki Kawamura
发明人： Kazuyoshi Inoue , Hisayuki Kawamura
IPC分类号： H01J1/62 , B32B15/04 , B05D5/12 , C23C14/34 , B29D11/00
CPC分类号： C04B35/01 , C04B35/453 , C04B35/50 , C04B2235/3224 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/77 , C04B2235/96 , C04B2235/9653 , C23C14/086 , C23C14/3414 , H01L51/0021 , H01L51/5012 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/5206 , H01L51/5215 , H01L51/5221 , Y10T428/12618
摘要： A sintered article is fabricated which contains one or more of indium oxide, zinc oxide, and tin oxide as a component thereof and contains any one or more types of metal out of hafnium oxide, tantalum oxide, lanthanide oxide, and bismuth oxide. A backing plate is attached to this sintered article to constitute a sputtering target. This sputtering target is used to fabricate a conductive film on a predetermined substrate by sputtering. This conductive film achieves a large work function while maintaining as much transparency as heretofore. This conductive film can be used to achieve an EL device or the like of improved hole injection efficiency.
摘要翻译：制造包含氧化铟，氧化锌和氧化锡作为其成分中的一种或多种的烧结制品，并且包含氧化铪，氧化钽，镧系元素氧化物和氧化铋中的任何一种或多种金属。该烧结体附着有背板，构成溅射靶。该溅射靶用于通过溅射在预定的基板上制造导电膜。该导电膜实现了大的功函数，同时保持了迄今为止的透明度。该导电膜可以用于实现改善的空穴注入效率的EL器件等。

98. 发明申请

US20090039775A1 CONDUCTIVE LAMINATE AND ORGANIC EL DEVICE 审中-公开
标题翻译：导电层压板和有机EL器件
公开(公告)号：US20090039775A1
公开(公告)日：2009-02-12
申请号：US12066453
申请日：2006-08-15
申请人： Shigekazu Tomai , Kazuyoshi Inoue , Shigeo Matsuzaki
发明人： Shigekazu Tomai , Kazuyoshi Inoue , Shigeo Matsuzaki
IPC分类号： H01J1/63 , B32B7/02
CPC分类号： H01L51/5218 , H01L51/5215 , Y10T428/24942
摘要： A conductive multilayer stack (10) which includes: a first layer (12) formed of a metal or transparent conductive material, and a second layer (14) provided on the first layer (12), which is formed of an oxide, carbide or nitride of at least one metal selected from the group consisting of indium, tin, zinc, aluminum, magnesium, silicon, titanium, vanadium, manganese, cobalt, nickel, copper, gallium, germanium, yttrium, zirconia, niobium, molybdenum, antimony, barium, hafnium, tantalum, tungsten, bismuth, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium and ytterbium, or carbon, wherein the second layer (14) has a work function larger than that of the first layer (12), and the second layer (14) had a film thickness of at least 0.5 nm and smaller than 50 nm.
摘要翻译：一种导电多层堆叠（10），其包括：由金属或透明导电材料形成的第一层（12）和设置在第一层（12）上的第二层（14），其由氧化物，碳化物或选自铟，锡，锌，铝，镁，硅，钛，钒，锰，钴，镍，铜，镓，锗，钇，氧化锆，铌，钼，锑中的至少一种金属的氮化物，钡，铪，钽，钨，铋，镧，铈，镨，钕，钐，铕，钆，铽，镝，钬，铒，ium和镱或碳，其中第二层（14）大于第一层（12）的厚度，第二层（14）的膜厚度至少为0.5nm且小于50nm。

99. 发明申请

US20060234088A1 Sputtering target, sintered compact, electrically conductive film produced by using the same, and organic EL device and substrate used for the same 有权
标题翻译：溅射靶，烧结体，利用其制造的导电膜以及用于其的有机EL器件和衬底
公开(公告)号：US20060234088A1
公开(公告)日：2006-10-19
申请号：US11454006
申请日：2006-06-16
申请人： Kazuyoshi Inoue , Hisayuki Kawamura
发明人： Kazuyoshi Inoue , Hisayuki Kawamura
IPC分类号： B32B19/00 , C03C27/00
CPC分类号： C04B35/01 , C04B35/453 , C04B35/50 , C04B2235/3224 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/77 , C04B2235/96 , C04B2235/9653 , C23C14/086 , C23C14/3414 , H01L51/0021 , H01L51/5012 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/5206 , H01L51/5215 , H01L51/5221 , Y10T428/12618
摘要： A sintered article is fabricated which contains one or more of indium oxide, zinc oxide, and tin oxide as a component thereof and contains any one or more types of metal out of hafnium oxide, tantalum oxide, lanthanide oxide, and bismuth oxide. A backing plate is attached to this sintered article to constitute a sputtering target. This sputtering target is used to fabricate a conductive film on a predetermined substrate by sputtering. This conductive film achieves a large work function while maintaining as much transparency as heretofore. This conductive film can be used to achieve an EL device or the like of improved hole injection efficiency.
摘要翻译：制造包含氧化铟，氧化锌和氧化锡作为其成分中的一种或多种的烧结制品，并且包含氧化铪，氧化钽，镧系元素氧化物和氧化铋中的任何一种或多种金属。该烧结体附着有背板，构成溅射靶。该溅射靶用于通过溅射在预定的基板上制造导电膜。该导电膜实现了大的功函数，同时保持了迄今为止的透明度。该导电膜可以用于实现改善的空穴注入效率的EL器件等。

100. 发明授权

US06900461B2 Conductive thin film for semiconductor device, semiconductor device, and method of manufacturing the same 失效
标题翻译：用于半导体器件的导电薄膜，半导体器件及其制造方法
公开(公告)号：US06900461B2
公开(公告)日：2005-05-31
申请号：US10344659
申请日：2002-05-10
申请人： Kazuyoshi Inoue , Shigeo Matsuzaki
发明人： Kazuyoshi Inoue , Shigeo Matsuzaki
IPC分类号： H01L21/285 , H01L21/288 , H01L21/336 , H01L29/45 , H01L29/49 , H01L29/786 , H01L29/04
CPC分类号： H01L21/32051 , H01L21/2855 , H01L21/28568 , H01L23/53247 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device 1 obtained by depositing, on a substrate 2, a gate electrode 4 formed by a conductive thin film containing Mo atoms and Ag atoms, a gate insulating film 6, an α-Si:H(i) film 8, a channel protection layer 10, an α-Si:H(n) film 12, a source/drain electrode 14 formed by a conductive thin film containing Mo atoms and Ag atoms, a source/drain insulating film 16, and a drive electrode 18. By using a conductive thin film containing Mo atoms and Ag atoms, the gate electrode 4 and the source/drain electrode 14 are formed to manufacture the semiconductor device 1. Thus, the conductive thin film for a semiconductor device, having high adhesion strength to a substrate, an insulating layer, and the like, a semiconductor device which operates stably without deteriorating the performance, and a method of efficiently manufacturing the conductive thin film and the semiconductor device can be provided.
摘要翻译：通过在基板2上沉积由包含Mo原子和Ag原子的导电薄膜形成的栅电极4，栅极绝缘膜6，α-Si：H（i）膜8，沟道保护层10，α-Si：H（n）膜12，由含有Mo原子和Ag原子的导电薄膜形成的源极/漏极14，源极/漏极绝缘膜16和驱动电极18。通过使用含有Mo原子和Ag原子的导电薄膜，形成栅电极4和源极/漏电极14以制造半导体器件1。因此，用于半导体器件的导电薄膜，具有对衬底的高粘合强度，绝缘层等，稳定地工作而不劣化性能的半导体器件，以及有效地制造导电薄膜和可以提供半导体器件。

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