会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 92. 发明授权
    • Method of manufacturing a semiconductor device whereby a laterally
bounded semiconductor zone is formed in a semiconductor body in a
self-aligning manner
    • 制造半导体器件的方法,由此横向界限的半导体区以自对准方式形成在半导体本体中
    • US5405789A
    • 1995-04-11
    • US141888
    • 1993-10-22
    • Ronald DekkerHenricus G. R. MaasArmand PruijmboomWilhelmus T. A. J. Van Den Einden
    • Ronald DekkerHenricus G. R. MaasArmand PruijmboomWilhelmus T. A. J. Van Den Einden
    • H01L21/28H01L21/331H01L21/335H01L21/336H01L21/8249H01L29/78H01L21/265
    • H01L29/66303H01L21/28H01L21/8249H01L29/66416
    • A method of manufacturing a semiconductor device with a semiconductor element which includes a semiconductor zone (19) situated below an electrode (18) and adjoining a surface (5) of a semiconductor body (1), which semiconductor zone substantially does not project outside the electrode (18) in lateral direction. The electrode (18) is here formed on the surface (5) of the semiconductor body (1), after which semiconductor material adjoining the surface (5) and not covered by the electrode (18) is removed by an etching treatment, whereby the position of the semiconductor zone (19) below the electrode (18) is defined. Before the electrode (18) is formed, a surface zone (16) adjoining the surface (5) is formed in the semiconductor body (1) with a depth and a doping such as are desired for the semiconductor zone (19) to be formed below the electrode (18), after which the electrode (18) is formed on this surface zone and, during the etching treatment, the portion of the surface zone (16) not covered by the electrode (18) is etched away through its entire thickness. Conducting materials such as aluminium or aluminium alloys may be used for the electrode (18), i.e. materials which are not resistant to temperatures necessary for forming semiconductor zones through diffusion.
    • 一种制造具有半导体元件的半导体器件的方法,该半导体元件包括位于电极(18)下方并邻接半导体本体(1)的表面(5)的半导体区(19),该半导体区基本上不会突出在半导体本体 电极(18)。 此时,电极(18)形成在半导体本体(1)的表面(5)上,然后通过蚀刻处理去除邻接表面(5)并且未被电极(18)覆盖的半导体材料,由此, 限定电极(18)下方的半导体区域(19)的位置。 在形成电极(18)之前,在半导体本体(1)中形成与表面(5)相邻的表面区域(16),以形成半导体区域(19)所需的深度和掺杂 在电极(18)的下方,之后在该表面区域上形成电极(18),并且在蚀刻处理期间,未被电极(18)覆盖的表面区域(16)的部分通过其整个 厚度。 可以使用诸如铝或铝合金的导电材料用于电极(18),即不耐受通过扩散形成半导体区域所需的温度的材料。