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91. 发明授权

US4310380A Plasma etching of silicon 失效
标题翻译：硅等离子体蚀刻
公开(公告)号：US4310380A
公开(公告)日：1982-01-12
申请号：US138083
申请日：1980-04-07
申请人： Daniel L. Flamm , Dan Maydan , David N. Wang
发明人： Daniel L. Flamm , Dan Maydan , David N. Wang
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/306
CPC分类号： H01L21/3065 , H01L21/32137
摘要： By utilizing a fluorine-containing gaseous compound in a plasma etching process, isotropic etching of monocrystalline silicon (48) and doped or undoped polycrystalline silicon (54) is achieved. The etching processes, which are applicable, for example, to pattern delineation in the processing of semiconductor wafers, are substantially free of any proximity effects and are characterized by a high etching rate at relatively low power levels, high selectivity (with respect to, for example, silicon dioxide) and excellent uniformity. By mixing other gases (for example, chlorine) with the fluorine-containing gas, the amount of undercutting achieved during the etching process can be selectively controlled.
摘要翻译：通过在等离子体蚀刻工艺中利用含氟气体化合物，实现单晶硅（48）和掺杂或未掺杂多晶硅（54）的各向同性蚀刻。可应用于例如在半导体晶片的处理中的图案描绘的蚀刻工艺基本上没有任何邻近效应，并且其特征在于在相对低的功率水平下的高蚀刻速率，高选择性（相对于例如二氧化硅）和优异的均匀性。通过将其他气体（例如氯）与含氟气体混合，可以选择性地控制蚀刻过程中实现的底切量。

92. 发明授权

US4244799A Fabrication of integrated circuits utilizing thick high-resolution patterns 失效
标题翻译：利用厚的高分辨率图案制作集成电路
公开(公告)号：US4244799A
公开(公告)日：1981-01-13
申请号：US941369
申请日：1978-09-11
申请人： David B. Fraser , Dan Maydan , Joseph M. Moran
发明人： David B. Fraser , Dan Maydan , Joseph M. Moran
IPC分类号： H01L21/302 , G03F7/09 , H01L21/027 , H01L21/30 , H01L21/306 , H01L21/312 , H01L21/316 , H01L21/318 , H01L21/3205
CPC分类号： H01L21/0274 , G03F7/094 , H01L21/0277 , H01L21/0278 , H01L21/312
摘要： In an integrated circuit fabrication sequence, a relatively thick sacrificial layer (18) is deposited on a nonplanar surface of a device wafer in which high-resolution features are to be defined. The thick layer is characterized by a conforming lower surface and an essentially planar top surface and by the capability of being patterned in a high-resolution way. An intermediate masking layer (22) and then a thin resist layer (20) are deposited on the top surface of the sacrificial layer, the thickness of the resist layer being insufficient by itself to provide adequate step coverage if the resist layer were applied directly on the nonplanar surface. A high-resolution pattern defined in the resist layer is transferred into the intermediate masking layer. Subsequently, a dry processing technique is utilized to replicate the pattern in the sacrificial layer. A high-resolution pattern with near-vertical sidewalls is thereby produced in the sacrificial layer. By means of the patterned sacrificial layer, high-resolution features are then defined in the underlying nonplanar surface.
摘要翻译：在集成电路制造序列中，相对较厚的牺牲层（18）沉积在要限定高分辨率特征的器件晶片的非平面表面上。厚层的特征在于具有一致的下表面和基本平坦的顶表面，并且通过以高分辨率方式图案化的能力。中间掩模层（22）然后薄的抗蚀剂层（20）沉积在牺牲层的顶表面上，抗蚀剂层的厚度本身不足以提供足够的阶梯覆盖，如果抗蚀剂层直接施加在非平面。在抗蚀剂层中限定的高分辨率图案被转移到中间掩模层中。随后，使用干法处理技术来复制牺牲层中的图案。由此在牺牲层中产生具有近垂直侧壁的高分辨率图案。通过图案化的牺牲层，然后在下面的非平面表面中定义高分辨率特征。

93. 发明授权

US4162528A X-ray-fluorescence measurement of thin film thicknesses 失效
标题翻译：薄膜厚度的X射线荧光测量
公开(公告)号：US4162528A
公开(公告)日：1979-07-24
申请号：US892105
申请日：1978-03-31
申请人： Juan R. Maldonado , Dan Maydan
发明人： Juan R. Maldonado , Dan Maydan
IPC分类号： G01N23/223 , G06F15/20 , G01N23/22
CPC分类号： G01N23/223 , G01N2223/076
摘要： The thicknesses of the thin film components of a sample that comprises plural thin films deposited on top of each other on a substrate are simultaneously measured by an x-ray-fluorescence system. Incident x-rays excite x-ray fluorescence in the sample. Detection of the excited fluorescence is enhanced by a unique collimator assembly that is also adapted to enable direct monitoring of the intensity of the incident x-rays.
摘要翻译：通过x射线荧光系统同时测定包含在基板上彼此沉积的多个薄膜的样品的薄膜成分的厚度。事件x射线激发样品中的X射线荧光。激发的荧光的检测通过独特的准直器组件增强，该准直器组件也适于直接监视入射的X射线的强度。

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