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    • 93. 发明授权
    • FinFET and method for manufacturing the same
    • FinFET及其制造方法
    • US08673704B2
    • 2014-03-18
    • US13579192
    • 2012-05-14
    • Huilong ZhuWei HeQingqing LiangHaizhou YinZhijiong Luo
    • Huilong ZhuWei HeQingqing LiangHaizhou YinZhijiong Luo
    • H01L21/00
    • H01L29/66795H01L29/785
    • A FinFET and a method for manufacturing the same are disclosed. The FinFET comprises an etching stop layer on a semiconductor substrate; a semiconductor fin on the etching stop layer; a gate conductor extending in a direction perpendicular to a length direction of the semiconductor fin and covering at least two side surfaces of the semiconductor fin; a gate dielectric layer between the gate conductor and the semiconductor fin; a source region and a drain region which are provided at two ends of the semiconductor fin respectively; and an interlayer insulating layer adjoining the etching stop layer below the gate dielectric layer, and separating the gate conductor from the etching stop layer and the semiconductor fin. A height of the fin of the FinFET is approximately equal to a thickness of a semiconductor layer for forming the semiconductor fin.
    • 公开了一种FinFET及其制造方法。 FinFET包括在半导体衬底上的蚀刻停止层; 在蚀刻停止层上的半导体鳍片; 栅极导体,其在与半导体鳍片的长度方向垂直的方向上延伸并覆盖半导体鳍片的至少两个侧面; 在栅极导体和半导体鳍片之间的栅介质层; 源极区和漏极区,分别设置在半导体鳍的两端; 以及与栅极电介质层下方的蚀刻停止层相邻的层间绝缘层,并且将栅极导体与蚀刻停止层和半导体鳍分离。 FinFET的鳍的高度近似等于用于形成半导体鳍的半导体层的厚度。
    • 94. 发明申请
    • FINFET AND METHOD FOR MANUFACTURING THE SAME
    • FINFET及其制造方法
    • US20130299885A1
    • 2013-11-14
    • US13579192
    • 2012-05-14
    • Huilong ZhuWei HeQingqing LiangHaizhou YinZhijiong Luo
    • Huilong ZhuWei HeQingqing LiangHaizhou YinZhijiong Luo
    • H01L29/78H01L21/336
    • H01L29/66795H01L29/785
    • A FinFET and a method for manufacturing the same are disclosed. The FinFET comprises an etching stop layer on a semiconductor substrate; a semiconductor fin on the etching stop layer; a gate conductor extending in a direction perpendicular to a length direction of the semiconductor fin and covering at least two side surfaces of the semiconductor fin; a gate dielectric layer between the gate conductor and the semiconductor fin; a source region and a drain region which are provided at two ends of the semiconductor fin respectively; and an interlayer insulating layer adjoining the etching stop layer below the gate dielectric layer, and separating the gate conductor from the etching stop layer and the semiconductor fin. A height of the fin of the FinFET is approximately equal to a thickness of a semiconductor layer for forming the semiconductor fin.
    • 公开了一种FinFET及其制造方法。 FinFET包括在半导体衬底上的蚀刻停止层; 在蚀刻停止层上的半导体鳍片; 栅极导体,其在与半导体鳍片的长度方向垂直的方向上延伸并覆盖半导体鳍片的至少两个侧面; 在栅极导体和半导体鳍片之间的栅介质层; 源极区和漏极区,分别设置在半导体鳍的两端; 以及与栅极电介质层下方的蚀刻停止层相邻的层间绝缘层,并且将栅极导体与蚀刻停止层和半导体鳍分离。 FinFET的鳍的高度近似等于用于形成半导体鳍的半导体层的厚度。