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91. 发明授权

US07943464B2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
标题翻译：非易失性机电场效应器件和使用其的电路及其形成方法
公开(公告)号：US07943464B2
公开(公告)日：2011-05-17
申请号：US12554647
申请日：2009-09-04
申请人： John E. Berg , Claude L. Bertin , Thomas Rueckes
发明人： John E. Berg , Claude L. Bertin , Thomas Rueckes
IPC分类号： H01L21/336
CPC分类号： B82Y10/00 , G11C8/10 , G11C11/412 , G11C11/54 , G11C13/025 , G11C16/0416 , G11C23/00 , H01L27/115 , Y10S977/733
摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal.
摘要翻译：非易失性场效应器件和使用它的电路。非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。源极，漏极和栅极中的每一个都具有相应的端子。电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。源极，漏极和栅极中的其他物体直接连接到其相应的端子。纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。

92. 发明授权

US07858979B2 Method of aligning deposited nanotubes onto an etched feature using a spacer 有权
标题翻译：使用间隔物将沉积的纳米管对准蚀刻特征的方法
公开(公告)号：US07858979B2
公开(公告)日：2010-12-28
申请号：US12475013
申请日：2009-05-29
申请人： Colin D. Yates , Christopher L. Neville , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
发明人： Colin D. Yates , Christopher L. Neville , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L21/76838 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are exposed forming a notched feature at the top of the spacers. A patterned nanotube layer is formed such that the nanotube layer overlies the top of the spacer and contacts a side portion of the raised feature in the notched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.
摘要翻译：公开了一种在纳米管层和凸起特征之间形成对准连接的方法。具有凸起特征的基底具有靠近凸起特征侧面的间隔物。蚀刻间隔物，直到突起特征的侧壁露出，在间隔物的顶部形成切口的特征。形成图案化的纳米管层，使得纳米管层覆盖在间隔物的顶部并与凹口特征中的凸起特征的侧部接触。然后用绝缘层覆盖纳米管层。然后去除绝缘层的顶部以露出蚀刻特征的顶部。

93. 发明授权

US07663911B2 Isolation structure for deflectable nanotube elements 有权
标题翻译：可偏转纳米管元件的隔离结构
公开(公告)号：US07663911B2
公开(公告)日：2010-02-16
申请号：US11928651
申请日：2007-10-30
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： G11C11/50 , G11C11/52 , H01L29/82
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node.
摘要翻译：基于纳米管的开关元件和逻辑电路。在本发明的一个实施例中，开关元件包括输入节点，输出节点，具有至少一个导电纳米管的纳米管通道元件和控制电极。控制电极相对于纳米管通道元件设置，以在输入节点和输出节点之间可控制地形成导电通道。通道至少包括所述纳米管通道元件。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。

94. 发明授权

US07652337B2 Nanotube-based switching element 有权
标题翻译：基于纳米管的开关元件
公开(公告)号：US07652337B2
公开(公告)日：2010-01-26
申请号：US11542524
申请日：2006-10-03
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/76
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/762
摘要： Nanotube-based switching elements and logic circuits. Under one aspect, a switching element includes an input node; an output node; a nanotube channel element comprising a ribbon of nanotube fabric; and a control electrode disposed in relation to the nanotube channel element to form an electrically conductive channel between the input node and the output node, wherein the electrically conductive channel at least includes the nanotube channel element. Under another aspect, a switching element includes an input node; an output node; a nanotube channel element comprising at least one electrically conductive nanotube, the nanotube being clamped at both ends by a clamping structure; and a control electrode disposed in relation to the nanotube channel element to form an electrically conductive channel between the input node and the output node, wherein the electrically conductive channel at least includes the nanotube channel element.
摘要翻译：基于纳米管的开关元件和逻辑电路。在一个方面，开关元件包括输入节点; 输出节点; 包括纳米管织物带的纳米管通道元件; 以及控制电极，其相对于所述纳米管通道元件设置，以在所述输入节点和所述输出节点之间形成导电通道，其中所述导电通道至少包括所述纳米管通道元件。另一方面，开关元件包括输入节点; 输出节点; 包括至少一个导电纳米管的纳米管通道元件，所述纳米管通过夹持结构夹在两端; 以及控制电极，其相对于所述纳米管通道元件设置，以在所述输入节点和所述输出节点之间形成导电通道，其中所述导电通道至少包括所述纳米管通道元件。

95. 发明授权

US07521736B2 Electromechanical three-trace junction devices 有权
标题翻译：机电三迹交界器件
公开(公告)号：US07521736B2
公开(公告)日：2009-04-21
申请号：US11454216
申请日：2006-06-15
申请人： Thomas Rueckes , Brent M. Segal , Claude L. Bertin
发明人： Thomas Rueckes , Brent M. Segal , Claude L. Bertin
IPC分类号： H01L29/00
CPC分类号： G11C11/56 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/77 , H01H1/0094 , Y10S977/742 , Y10S977/932 , Y10S977/936 , Y10S977/943
摘要： Three-trace electromechanical devices and methods of using same are described. The device of the present invention includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. The nanotube ribbon is capable of maintaining its position after removing an electrical stimulus applied to at least one of the first and second electrically conductive elements. Such devices may be formed into arrays of cells. One of the conductive elements may be used to create an attractive force to cause the nanotube ribbon to contact a conductive element, and the other conductive element may be used to create an attractive force to pull the nanotube ribbon from contact with the contacted conductive element. The electrically conductive traces may be aligned or unaligned with one another.
摘要翻译：描述了三轨机电装置及其使用方法。本发明的器件包括第一和第二导电元件，其间设置有纳米管带（或其他机电元件）。在除去施加到第一和第二导电元件中的至少一个的电刺激之后，纳米管带能够保持其位置。这样的器件可以形成为单元阵列。可以使用导电元件之一来产生引导纳米管带与导电元件接触的吸引力，并且另一个导电元件可用于产生吸引力以将纳米管带拉离与接触的导电元件接触。导电迹线可以彼此对准或不对准。

96. 发明授权

US07339401B2 Nanotube-based switching elements with multiple controls 有权
标题翻译：基于纳米管的开关元件具有多个控制
公开(公告)号：US07339401B2
公开(公告)日：2008-03-04
申请号：US11197196
申请日：2005-08-04
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H03K19/20
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior depending on the construction.
摘要翻译：基于纳米管的开关元件具有由此制成的多个控制和电路。开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。根据结构，开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

97. 发明授权

US07211854B2 Field effect devices having a gate controlled via a nanotube switching element 有权
标题翻译：具有通过纳米管开关元件控制的栅极的场效应器件
公开(公告)号：US07211854B2
公开(公告)日：2007-05-01
申请号：US10864682
申请日：2004-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译：具有通过纳米管开关元件控制的栅极的场效应器件。在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。第二半导体类型的材料的沟道区域设置在源区和漏区之间。栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

98. 发明授权

US07071023B2 Nanotube device structure and methods of fabrication 有权
标题翻译：纳米管器件结构及其制造方法
公开(公告)号：US07071023B2
公开(公告)日：2006-07-04
申请号：US10918181
申请日：2004-08-13
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L51/40 , H01L21/335 , H03H9/00
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/725 , Y10S977/733 , Y10S977/755 , Y10S977/938 , Y10T29/49105
摘要： Nanotube device structures and methods of fabrication. Under one embodiment, a method of forming a nanotube switching element includes forming a first structure having at least one output electrode, forming a conductive article having at least one nanotube, and forming a second structure having at least one output electrode and positioning said second structure in relation to the first structure and the conductive article such that the output electrode of the first structure is opposite the output electrode of the second structure and such that a portion of the conductive article is positioned therebetween. At least one signal electrode is provided in electrical communication with the conductive article having at least one nanotube, and at least one control electrode is provided in relation to the conductive article such that the conductive electrode may control the conductive article to form a channel between the signal electrode and at least one of the output electrodes. The first and second structures each include a respective second output electrode and wherein the second electrodes are positioned opposite each other with the conductive article positioned therebetween. The control electrode and the second control electrode includes an insulator layer on a surface facing the conductive article.
摘要翻译：纳米管器件结构和制造方法。在一个实施例中，形成纳米管切换元件的方法包括形成具有至少一个输出电极的第一结构，形成具有至少一个纳米管的导电制品，并形成具有至少一个输出电极的第二结构，并且将所述第二结构相对于第一结构和导电制品，使得第一结构的输出电极与第二结构的输出电极相对，并且导电制品的一部分位于它们之间。提供至少一个信号电极与具有至少一个纳米管的导电制品电连通，并且相对于导电制品提供至少一个控制电极，使得导电电极可以控制导电制品以在导电制品之间形成通道信号电极和至少一个输出电极。第一和第二结构各自包括相应的第二输出电极，并且其中第二电极彼此相对定位，导电制品位于它们之间。控制电极和第二控制电极在面向导电物品的表面上包括绝缘体层。

99. 发明授权

US07045421B2 Process for making bit selectable devices having elements made with nanotubes 有权
标题翻译：用于制造具有由纳米管制成的元件的位选择器件的工艺
公开(公告)号：US07045421B2
公开(公告)日：2006-05-16
申请号：US10824706
申请日：2004-04-15
申请人： Thomas Rueckes , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L21/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01L27/28 , H01L51/0048 , H01L51/0052
摘要： A method is used to make a bit selectable device having nanotube memory elements. A structure having at least two transistors is provided, each with a drain and a source with a defined channel region therebetween, each transistor further including a gate over said channel. A trench is formed between one of the source and drain of a first transistor and one of the source and drain of a second transistor. An electrical communication path is formed in the trench between one of the source and drain of a first transistor and one of the source and drain of a second transistor. A defined pattern of nanotube fabric is provided over at least a horizontal portion of the structure and extending into the trench. An electrode is provided in the trench. A pattern of nanotube fabric is suspended so that at least a portion is vertically suspended in spaced relation to the vertical walls of the trench and positioned so that the vertically suspended defined pattern of nanotube fabric is electromechanically deflectable into electrical communication with one of the drain and source of a first transistor and one of the source and drain of a second transistor.
摘要翻译：一种方法用于制造具有纳米管存储元件的位选择器件。提供了具有至少两个晶体管的结构，每个具有漏极和源极之间具有限定的沟道区域，每个晶体管还包括位于所述沟道上的栅极。在第一晶体管的源极和漏极之一以及第二晶体管的源极和漏极之一之间形成沟槽。在第一晶体管的源极和漏极之一以及第二晶体管的源极和漏极中的一个之间的沟槽中形成电连通路径。在结构的至少一个水平部分上提供限定的纳米管织物图案并且延伸到沟槽中。在沟槽中设置电极。纳米管织物的图案被悬浮，使得至少一部分垂直悬挂在与沟槽的垂直壁隔开的位置上，并且被定位成使得垂直悬挂的限定图案的纳米管织物可机电偏转成与排水管之一电连通第一晶体管的源极和第二晶体管的源极和漏极之一。

100. 发明授权

US06995046B2 Process for making byte erasable devices having elements made with nanotubes 失效
标题翻译：用于制造具有由纳米管制成的元件的字节可擦除器件的过程
公开(公告)号：US06995046B2
公开(公告)日：2006-02-07
申请号：US10824678
申请日：2004-04-15
申请人： Thomas Rueckes , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L21/335
CPC分类号： H01L51/0048 , B82Y10/00 , G11C13/025 , G11C23/00 , Y10S977/943
摘要： A method of making byte erasable devices having elements made with nanotubes. Under one aspect of the invention, a device is made having nanotube memory elements. A structure is provided having a plurality of transistors, each with a drain and a source with a defined channel region therebetween, each transistor further including a gate over said channel. For a predefined set of transistors, a corresponding trench is formed between gates of adjacent transistors. For each trench, a defined pattern of nanotube fabric is provided over at least a horizontal portion of the structure and extending into the trench. An electrode is provided in each trench. Each defined pattern of nanotube fabric is suspended so that at least a portion is vertically suspended in spaced relation to the vertical walls of the trench and positioned so that the vertically suspended defined pattern of nanotube fabric is electromechanically deflectable into electrical communication with one of the drain and source of a transistor. An electrical communication path is provided electrically connecting each electrode so that all electrodes may electro-statically attract a corresponding defined pattern of nanotube fabric away from a transistor and toward the electrode.
摘要翻译：一种制造具有由纳米管制成的元件的字节可擦除器件的方法。在本发明的一个方面，制造具有纳米管存储元件的装置。提供了具有多个晶体管的结构，每个具有漏极和源极之间的沟道区域，每个晶体管还包括位于所述沟道上的栅极。对于预定义的一组晶体管，在相邻晶体管的栅极之间形成相应的沟槽。对于每个沟槽，在结构的至少水平部分上提供限定的纳米管织物图案并且延伸到沟槽中。在每个沟槽中设置电极。每个限定的纳米管织物图案被悬挂，使得至少一部分垂直悬挂在与沟槽的垂直壁隔开的关系中，并且定位成使得垂直悬挂的限定图案的纳米管织物可机电偏转成与漏斗之一电连通和晶体管的源极。电气连接路径被电连接每个电极，使得所有电极可以静电吸引相应的限定图案的纳米管织物远离晶体管并朝向电极。

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