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91. 发明公开

EP2596532A1 OPTOELEKTRONISCHES BAUELEMENT 有权
标题翻译： OPTOELEKTRONISCHES宝石
公开(公告)号：EP2596532A1
公开(公告)日：2013-05-29
申请号：EP11726077.8
申请日：2011-05-25
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz
IPC分类号： H01L25/16 , H01L33/38 , H01L33/62
CPC分类号： H01L33/62 , H01L25/167 , H01L33/22 , H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an optoelectronic component, having a semiconductor body (1) comprising an epitaxial layer sequence (2), and a carrier substrate (6) made of a semiconductor material and connected to the semiconductor body (1) by means of a solder layer (7) and further comprising interlayer connections (9a, 9b). The carrier substrate (6) comprises a surface doping zone (14) extending along a first main surface (11) facing the semiconductor body (1). The surface doping zone (14) comprises a p-conductive region (14a) and an n-conducting region (14b) adjacent thereto, between which a pn-transition (16) is formed. The n-conductive region (14b) is electrically connected to a p-doped region (3) of the epitaxial layer sequence (2) by means of a first sub-region (7a) of the solder layer (7), and the p-conductive region (14a) is electrically connected to an n-doped region (5) of the epitaxial layer sequence (2) by means of a second sub-region (7b) of the solder layer (7), so that the pn-transition (16) forms a protective diode for the semiconductor body (1) in the surface doping zone (14).
摘要翻译：本发明涉及一种光电子器件，其具有包括外延层序列（2）的半导体本体（1）以及由半导体材料制成并且通过焊料连接到半导体本体（1）的载体衬底（6）层（7）并且还包括层间连接（9a，9b）。载体衬底（6）包括沿着面对半导体本体（1）的第一主表面（11）延伸的表面掺杂区（14）。表面掺杂区（14）包括p型导电区（14a）和与其相邻的n型导电区（14b），在其间形成pn型过渡区（16）。借助于焊料层（7）的第一子区域（7a），n导电区域（14b）电连接到外延层序列（2）的p掺杂区域（3），并且p 通过焊料层（7）的第二子区域（7b）将导电区域（14a）电连接到外延层序列（2）的n掺杂区域（5），使得pn- 过渡（16）形成用于表面掺杂区（14）中的半导体本体（1）的保护二极管。

92. 发明公开

EP2454763A1 OPTOELEKTRONISCHES HALBLEITERBAUTEIL UND VERFAHREN ZUR HERSTELLUNG EINES ANORGANISCHEN OPTOELEKTRONISCHEN HALBLEITERBAUTEILS 有权
标题翻译：光电半导体器件及其制造方法无机光电半导体器件
公开(公告)号：EP2454763A1
公开(公告)日：2012-05-23
申请号：EP10724846.0
申请日：2010-06-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz , VON MALM, Norwin
IPC分类号： H01L33/44 , H01L33/40
CPC分类号： H01L33/44 , H01L24/05 , H01L33/405 , H01L2224/04042 , H01L2224/05556 , H01L2224/48091 , H01L2924/12041 , H01L2924/12043 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
摘要： The invention relates to at least one embodiment of the optoelectronic semiconductor component (1), comprising a carrier (2) and at least one semiconductor layer sequence (3). The semiconductor layer sequence (3) comprises at least one active layer (30). The semiconductor layer sequence (3) is further applied to the carrier (2). The semiconductor component (1) further comprises a metal mirror (4) between the carrier (2) and the semiconductor layer sequence (3). The carrier (2) and the semiconductor layer sequence (3) protrude over the metal mirror (4) in the lateral direction. The metal mirror (4) is also directly encompassed in the lateral direction by an encapsulation layer (5) transparent to radiation.
摘要翻译：的光电子半导体器件包括载体和至少一个半导体层序列。半导体层序列包含至少一个有源层。半导体层序列更进一步地安装在支架上。半导体部件进一步包括位于所述载体和所述半导体层序列之间的金属镜。所述载体和所述半导体层序列项目后期反弹超过金属镜。该金属反射镜是尾盘反弹由透射辐射的封装层包围。

93. 发明公开

EP2313935A1 OPTOELEKTRONISCHER HALBLEITERCHIP 审中-公开
公开(公告)号：EP2313935A1
公开(公告)日：2011-04-27
申请号：EP09775928.6
申请日：2009-06-29
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz , SABATHIL, Matthias
IPC分类号： H01L33/38 , H01L33/42
CPC分类号： H01L33/387 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： The invention describes an optoelectronic semiconductor chip (1) having a semiconductor layer sequence (2) which has an active zone (4) for generating electromagnetic radiation, and having a patterned current spreading layer (6) which contains a transparent conductive oxide and is arranged on a main surface (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main surface (12).
摘要翻译：本发明描述了一种具有半导体层序列（2）的光电子半导体芯片（1），该半导体层序列具有用于产生电磁辐射的有源区（4），并且具有包含透明导电氧化物的图案化电流扩展层（6）在所述半导体层序列（2）的主表面（12）上，其中所述电流扩展层（6）覆盖所述主表面（12）的至少30％并且至多60％。

94. 发明公开

EP2274774A1 STRAHLUNGSEMITTIERENDER HALBLEITERCHIP 有权转让
标题翻译：发射辐射的半导体芯片
公开(公告)号：EP2274774A1
公开(公告)日：2011-01-19
申请号：EP09741730.7
申请日：2009-04-17
申请人： OSRAM Opto Semiconductors GmbH
发明人： RODE, Patrick , HÖPPEL, Lutz , ENGL, Karl , ALBRECHT, Tony
IPC分类号： H01L25/16
CPC分类号： H01L25/167 , H01L33/0079 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip (1) having a carrier (5), a semiconductor body (2) comprising a series of semiconductor layers, a first contact (35) and a second contact (36). The series of semiconductor layers comprises an active region for generating radiation (20), said region lying between the first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) has a primary surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is located on the face of the active region (20) facing the primary surface (51) of the carrier (5) and can be contacted by means of the first contact (35). The second semiconductor layer (22) can be contacted by means of the second contact (36). A protective diode (4) is situated in a conducting path which runs through the carrier (5) between the first contact (35) and the second contact (36).

95. 发明公开

EP2272105A1 LEUCHTDIODENCHIP 有权
公开(公告)号：EP2272105A1
公开(公告)日：2011-01-12
申请号：EP09737749.3
申请日：2009-04-28
申请人： OSRAM Opto Semiconductors GmbH
发明人： SABATHIL, Matthias , HÖPPEL, Lutz , WEIMAR, Andreas , ENGL, Karl , BAUR, Johannes
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/42 , H01L33/46 , H01L33/641 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an LED chip (1) comprising a semiconductor layer sequence (2) which is electrically contacted by contacts (5) via a current spreading layer (3). The contacts (5) cover approximately 1% to 8% of the area of the semiconductor layer sequence (2). The contacts (5) e.g. consist of separate contact points (51) which are arranged on the grid points of a regular grid (52) having a grid constant of 12 μm. The current spreading layer (3) contains e.g. indium tin oxide, indium zinc oxide or zinc oxide and has a thickness in the range of 15 nm to 60 nm.
摘要翻译：本发明涉及包括半导体层序列（2）的LED芯片（1），所述半导体层序列通过电流扩展层（3）与触点（5）电接触。触点（5）覆盖半导体层序列（2）的面积的约1％至8％。触点（5）例如由分开的接触点（51）组成，所述接触点布置在网格常数为12μm的规则网格（52）的网格点上。电流扩展层（3）包含例如铟锡氧化物，铟锌氧化物或氧化锌，并具有15nm至60nm范围内的厚度。

96. 发明公开

EP2260516A1 OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN 有权
标题翻译：光电子半导体芯片和方法生产同样
公开(公告)号：EP2260516A1
公开(公告)日：2010-12-15
申请号：EP09727845.1
申请日：2009-03-13
申请人： OSRAM Opto Semiconductors GmbH
发明人： ENGL, Karl , HÖPPEL, Lutz , RODE, Patrick , SABATHIL, Matthias
IPC分类号： H01L33/00 , H01L29/45 , H01L21/225
CPC分类号： H01L33/382 , H01L33/10 , H01L33/40 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an opto-electronic semiconductor chip. The semiconductor chip has a semiconductor layer sequence (2) with an active layer (23) provided between a layer of a first conductivity type (21) and a layer of a second conductivity type (22) for generating radiation. The layer of the first conductivity type (21) is adjacent to a front side (110) of the semiconductor layer sequence (2). The semiconductor layer sequence (2) comprises at least one recess (3) that extends from a rear side (120) located across a front side (110) of the semiconductor layer sequence (2) through the active layer (23) to the layer of the first conductivity type (21). The layer of the first conductivity type (21) is electrically connected through the recess (3) by means of a first electrical connection layer (5) which covers at least some sections of the rear side (120) of the semiconductor layer sequence (2). The semiconductor chip contains in the region of the recess (3) a transition layer (20) which is composed of material of the layer of the first conductivity type (21) and material of the first electrical connection layer (5). The invention further relates to a method for producing such a semiconductor chip.

97. 发明公开

EP2150992A2 HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERCHIPS 有权
标题翻译：半导体芯片和一种用于生产半导体芯片
公开(公告)号：EP2150992A2
公开(公告)日：2010-02-10
申请号：EP08748776.5
申请日：2008-04-24
申请人： OSRAM Opto Semiconductors GmbH
发明人： ENGL, Karl , HÖPPEL, Lutz , EICHLER, Christoph , SABATHIL, Matthias , WEIMAR, Andreas
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/105 , H01S5/18308 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18391 , H01S5/3095 , H01L2924/00
摘要： The invention relates to a semiconductor chip (1) having a semiconductor body (2) comprising a semiconductor layer sequence having an active region (25) designed to generate radiation. A mirror structure (3) is located on the semiconductor body (2), said mirror structure having a mirror layer (4) and a dielectric layer structure (5) located at least in areas between the mirror layer and the semiconductor body. A method for producing a semiconductor chip is also disclosed.

98. 发明授权

EP2130235B1 LEUCHTDIODENCHIP MIT METALLISCHER SPIEGELSCHICHT, DURCHKONTAKTIERUNG, TUNNELKONTAKT UND LADUNGSTRÄGERRESERVOIR 有权转让
公开(公告)号：EP2130235B1
公开(公告)日：2019-03-06
申请号：EP08700869.4
申请日：2008-01-17
申请人： OSRAM Opto Semiconductors GmbH
发明人： SABATHIL, Matthias , HÖPPEL, Lutz , EICHLER, Christoph , ENGL, Karl , PETER, Matthias , STRASSBURG, Martin
IPC分类号： H01L33/14 , H01L33/38 , H01L33/40 , H01L33/22 , H01L33/44

100. 发明授权

EP2652785B1 TRÄGER FÜR EINEN OPTOELEKTRONISCHEN HALBLEITERCHIP UND HALBLEITERCHIP 有权
标题翻译： TRÄGERFÜREINEN OPTOELEKTRONISCHEN HALBLEITERCHIP UND HALBLEITERCHIP
公开(公告)号：EP2652785B1
公开(公告)日：2017-07-12
申请号：EP11794094.0
申请日：2011-12-05
申请人： OSRAM Opto Semiconductors GmbH
发明人： HÖPPEL, Lutz
IPC分类号： H01L23/498 , H01L25/16 , H01L33/62 , H01L33/48
CPC分类号： H01L33/48 , H01L23/49827 , H01L25/167 , H01L33/483 , H01L33/62 , H01L2924/0002 , H01L2924/00

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