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91. 发明公开

EP2198465A1 HALBLEITERLICHTQUELLE MIT EINER PRIMÄRSTRAHLUNGSQUELLE UND EINEM LUMINESZENZKONVERSIONSELEMENT 有权转让
标题翻译： HALBLEITERLICHTQUELLE MIT EINERPRIMÄRSTRAHLUNGSQUELLEUND EINEM LUMINESZENZKONVERSIONSELEMENT
公开(公告)号：EP2198465A1
公开(公告)日：2010-06-23
申请号：EP08801322.2
申请日：2008-09-11
申请人： OSRAM Opto Semiconductors GmbH
发明人： OTT, Hubert , LELL, Alfred , TAUTZ, Sönke , STRAUSS, Uwe , BAUMANN, Frank , PETERSEN, Kirstin
IPC分类号： H01L33/00 , F21K7/00
CPC分类号： F21K9/64 , F21V9/30 , F21Y2115/10 , H01L33/507 , H01L33/58 , H01L33/60
摘要： The invention relates to a semiconductor light source having a primary radiation source (1) that, in operation, emits electromagnetic primary radiation (5) in a first wavelength range and having a luminescence conversion module (2) into which primary radiation (5) emitted by the primary radiation source (1) is coupled. The luminescence conversion module (2) comprises a luminescence conversion element (6) that absorbs primary radiation (5) from the first wavelength range by means of a luminescent material and emits electromagnetic secondary radiation (15) in a second wavelength range. The luminescence conversion element (6) is disposed at a distance from the primary radiation source (1) on a cooling body (3). Said luminescence conversion element (6) comprises a reflector surface (7, 71, 72) that reflects back primary radiation (5) traveling into the luminescence conversion element (6) but not absorbed thereby and/or reflects secondary radiation (15) in the direction of a light decoupling surface (601) of the luminescence conversion element (6).
摘要翻译：提供一种半导体光源，所述半导体光源具有主辐射源（1），当所述半导体光源被操作时，所述主辐射源（1）在第一波长范围内发射电磁初级辐射（5），并且具有发光转换模块），其中馈送由主辐射源（1）发射的初级辐射（5）。发光转换模块（2）包含发光转换元件（6），其通过发光材料从第一波长范围吸收主辐射（5）并在第二波长范围内发射电磁次级辐射（15）。发光转换元件（6）布置在距离主辐射源（1）一定距离处的散热器（3）上。它具有反射回到发光转换元件（6）的主要辐射（5）的反射器表面（7,71,72），其通过发光转换元件（6）并且不被其吸收和/或反射次级辐射 15）在发光转换元件（6）的光耦合表面（601）的方向上。

92. 发明公开

EP2052419A2 HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERCHIPS 有权转让
公开(公告)号：EP2052419A2
公开(公告)日：2009-04-29
申请号：EP07817511.4
申请日：2007-09-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： STRAUSS, Uwe
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079
摘要： A semiconductor chip (1) is specified comprising a carrier (3) and comprising a semiconductor body (2), which comprises a semiconductor layer sequence having an active region (21) provided for generating radiation, wherein: the carrier has a first carrier area (31) facing the semiconductor body (2) and a second carrier area (32) remote from the semiconductor body (2), the semiconductor body (2) is cohesively fixed to the carrier (3) by means of a connecting layer (4), and plurality of reflective or scattering elements (40, 7) are formed between the second carrier area (32) and the active region (21). A method for producing a semiconductor chip is furthermore specified.
摘要翻译：一种半导体芯片（1）被指定为包括载体（3）并且包括半导体主体（2），半导体主体（2）包括具有用于产生辐射的有源区（21）的半导体层序列，其中：载体具有第一载体区（2）的第一载体区域（31）和远离半导体本体（2）的第二载体区域（32），半导体本体（2）借助于连接层（4）粘附地固定到载体），并且在第二载体区域（32）和有源区域（21）之间形成多个反射或散射元件（40,7）。此外规定了用于制造半导体芯片的方法。

93. 发明公开

EP1449259A2 OHMSCHE KONTAKTSTRUKTUR UND VERFAHREN ZU DEREN HERSTELLUNG 审中-公开
标题翻译：电阻接触的结构及方法及其
公开(公告)号：EP1449259A2
公开(公告)日：2004-08-25
申请号：EP02792590.8
申请日：2002-11-12
申请人： Osram Opto Semiconductors GmbH
发明人： BRÜDERL, Georg , HAHN, Berthold , HÄRLE, Volker , LUGAUER, Hans-Jürgen , STRAUSS, Uwe , WEIMAR, Andreas
IPC分类号： H01L29/45 , H01L21/28 , H01L33/00
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/14 , H01L33/325 , H01L33/40
摘要： The invention relates to an ohmic contact structure comprising a metallisation layer (14) which is arranged on a semiconductor material (10). A contact layer is formed in the semiconductor material (10, said contact layer comprising a first partial region which is adjacent to the metallisation layer (14) and a second partial region (18) following the first partial region. The contact layer is doped in such a way that the doping concentration (N2) in the first partial region (12) is higher than the doping concentration (N1) in the second partial region (18).

94. 发明公开

EP1299911A1 STRAHLUNGSEMITTIERENDER HALBLEITERCHIP 有权
标题翻译：发射辐射的半导体芯片
公开(公告)号：EP1299911A1
公开(公告)日：2003-04-09
申请号：EP01953901.4
申请日：2001-07-10
申请人： Osram Opto Semiconductors GmbH
发明人： EISERT, Dominik , HÄRLE, Volker , STRAUSS, Uwe , ZEHNDER, Ulrich
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/08 , H01L33/24
摘要： The invention relates to a semiconductor chip (10), in which the active layer (3) is interrupted by cavities (11). In this way, the lateral surfaces (9) of the active layer (3) when viewed from a light generating point (6) appear at a greater solid angle and the light paths in the active layer (3) are shortened.

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