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91. 发明申请

US20050280958A1 Dual type magnetic sensing element wherein deltaRxA in upstream part in flow direction of electric current is smaller than deltaRxA in downstream part 失效
标题翻译：双向磁传感元件，其中电流流动方向上游部分的δRxA小于下游部分的δRxA
公开(公告)号：US20050280958A1
公开(公告)日：2005-12-22
申请号：US11155289
申请日：2005-06-17
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Masahiko Ishizone
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Masahiko Ishizone
IPC分类号： G11B5/127 , G11B5/265 , G11B5/33
CPC分类号： G11B5/265 , G11B5/127
摘要： In a magnetic sensing element, the amounts of spin-dependent bulk scattering in the upstream part of a multilayer film and in the downstream part of the multilayer film are controlled to be asymmetric. Thus, a value ΔR×A, which represents the variation in magnetoresistance×element area, for the upstream part of the multilayer film is controlled so as to be smaller than the value ΔR×A for the downstream part of the multilayer film.
摘要翻译：在磁传感元件中，多层膜的上游部分和多层膜的下游部分中的自旋依赖性体散射量被控制为不对称。因此，对于多层膜的上游部分，表示代表磁阻效应区域的变化的值ΔRxA被控制为小于多层膜的下游部分的值ΔRxA。

92. 发明授权

US06913836B1 Spin-valve type magnetoresistive sensor and method of manufacturing the same 有权
标题翻译：旋转阀式磁阻传感器及其制造方法
公开(公告)号：US06913836B1
公开(公告)日：2005-07-05
申请号：US09586624
申请日：2000-06-02
申请人： Naoya Hasegawa
发明人： Naoya Hasegawa
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/3277 , Y10T428/12389 , Y10T428/12465 , Y10T428/12861 , Y10T428/12951 , Y10T428/24479 , Y10T428/2495
摘要： A spin-valve type magnetoresistive sensor with a bias structure enabling a magnetization direction of a free magnetic layer to be uniformly arranged with certainty. The spin-valve type magnetoresistive sensor comprises an antiferromagnetic layer; a pinned magnetic layer having a magnetization direction made stationary; a nonmagnetic electrically conductive layer formed between the pinned magnetic layer and a free magnetic layer; soft magnetic layers that are arranged on the free magnetic layer while a spacing corresponding to a track width is left between the soft magnetic layers and that fill recesses in the free magnetic layer on both sides of an area corresponding to the track width; bias layers formed on the soft magnetic layers; and electrically conductive layers. The antiferromagnetic layer and the bias layers are each made of an alloy containing at least one or more elements selected from among Pt, Pd, Rh, Ru, Ir, Os, Au, Ag, Cr, Ni, Ne, Ar, Xe and Kr, as well as Mn.
摘要翻译：具有使自由磁性层的磁化方向能够确定地均匀排列的偏置结构的自旋阀型磁阻传感器。自旋阀型磁阻传感器包括反铁磁层; 具有磁化方向静止的钉扎磁性层; 形成在钉扎磁性层和自由磁性层之间的非磁性导电层; 布置在自由磁性层上的软磁性层，而与磁道宽度相对应的间隔留在软磁性层之间，并且填充相应于轨道宽度的区域两侧的自由磁性层中的凹槽; 形成在软磁层上的偏置层; 和导电层。反铁磁层和偏置层各自由含有选自Pt，Pd，Rh，Ru，Ir，Os，Au，Ag，Cr，Ni，Ne，Ar，Xe和Kr中的至少一种以上的元素的合金制成，以及Mn。

93. 发明申请

US20050135021A1 Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same 有权
标题翻译：交换耦合膜具有改善的载流可靠性和改善电阻变化率和使用其的磁感应元件
公开(公告)号：US20050135021A1
公开(公告)日：2005-06-23
申请号：US11053077
申请日：2005-02-07
申请人： Naoya Hasegawa , Masamichi Saito
发明人： Naoya Hasegawa , Masamichi Saito
IPC分类号： G01R33/09 , G11B5/39 , G11B5/40 , H01F10/32 , H01F41/30 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3932 , G11B5/40 , H01F10/3218 , H01F10/3295 , H01F41/303 , H01F41/325 , Y10T428/11 , Y10T428/1129
摘要： A seed layer having a chromium content in the range of 35 to 60 atomic percent and a thickness of 10 to 200 Å is deposited to have a single phase of the face-centered cubic structure by optimizing the sputtering conditions, etc. The surface of the seed layer maintaining the face-centered cubic structure exhibits improved wettability, and the rate of change in resistance ΔR/R can thereby be improved.
摘要翻译：通过优化溅射条件等，沉积铬含量在35至60原子％范围内并且厚度为10至200的种子层以具有面心立方结构的单相。保持面心立方结构的种子层表现出改善的润湿性，从而可以提高电阻DeltaR / R的变化率。

94. 发明授权

US06700756B1 Spin-valve thin film magnetic element and method of manufacturing the same 失效
标题翻译：旋转阀薄膜磁性元件及其制造方法
公开(公告)号：US06700756B1
公开(公告)日：2004-03-02
申请号：US09586507
申请日：2000-06-02
申请人： Naoya Hasegawa
发明人： Naoya Hasegawa
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3903 , G11B5/3932 , H01F10/3268
摘要： The present invention provides a spin-valve thin film magnetic element adaptable to high-density recording and having excellent heat resistance. The track width is defined by bias layers formed on flat portions of a free magnetic layer. The flat portions formed both sides of a track groove with no bias layer remaining in the groove. The spin-valve thin film magnetic element has an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, bias layers, and conductive layers, which are formed on a substrate. The free magnetic layer forms the track groove on the side opposite to the pinned magnetic layer. The track groove has a width corresponding to the track width.
摘要翻译：本发明提供一种适用于高密度记录和耐热性优异的自旋阀薄膜磁性元件。轨道宽度由形成在自由磁性层的平坦部分上的偏置层限定。平坦部分形成轨道槽的两侧，而沟槽中没有偏置层。自旋阀薄膜磁性元件具有形成在基板上的反铁磁层，钉扎磁性层，非磁性导电层，自由磁性层，偏置层和导电层。自由磁性层在与被钉扎的磁性层相反的一侧形成轨道槽。轨道槽具有对应于轨道宽度的宽度。

95. 发明授权

US06678128B2 Exchange coupling film and electroresistive sensor using the same 有权
标题翻译：交换耦合膜和电阻传感器使用它
公开(公告)号：US06678128B2
公开(公告)日：2004-01-13
申请号：US09833756
申请日：2001-04-11
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , H01F10/123 , H01F10/3268 , H01F41/302 , Y10T428/1171
摘要： An exchange coupling film has an antiferromagnetic layer, a pinned magnetic layer, and a seed layer provided on the side of the antiferromagnetic layer 4 opposite to the pinned magnetic layer. The seed layer has a crystalline structure constituted mainly by face-centered cubic crystals with (111) planes substantially aligned. The seed layer is preferably non-magnetic. A laminate structure including the antiferromagnetic layer and a free layer inclusive of the intervening layers have crystalline orientations with their (111) planes substantially aligned, so that large crystal grains and, hence, large ratio of resistance variation can be achieved.
摘要翻译：交换耦合膜具有反铁磁层，钉扎磁性层和设置在反铁磁层4的与被钉扎的磁性层相对的一侧的种子层。种子层具有主要由面心立方晶体构成的晶体结构，其中（111）面基本对准。种子层优选是非磁性的。包括反铁磁层和包含中间层的自由层的层压结构具有其（111）面基本上取向的结晶取向，从而可以获得大的晶粒，从而实现大的电阻变化比。

96. 发明授权

US06639764B2 Spin-valve magnetoresistive thin film element 失效
公开(公告)号：US06639764B2
公开(公告)日：2003-10-28
申请号：US09358123
申请日：1999-07-20
申请人： Masamichi Saito , Naoya Hasegawa
发明人： Masamichi Saito , Naoya Hasegawa
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3951 , G11B2005/3996 , H01F10/3268 , H01F41/304 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49055 , Y10T29/49067
摘要： An antiferromagnetic layer is formed of a PtMn alloy which has high blocking temperature and further generates a great exchange coupling magnetic field with a first pinned magnetic layer. Further, by appropriately adjusting the film thickness ratio of the first pinned magnetic layer and a second pinned magnetic layer, the film thickness of a nonmagnetic electrically conductive layer and the antiferromagnetic layer, and so forth, an exchange coupling magnetic field of at least 500 (Oe) or greater, preferably 1,000 (Oe) or greater, can be obtained.

97. 发明授权

US06635366B2 Spin valve thin film magnetic element and thin film magnetic head 失效
标题翻译：旋转阀薄膜磁性元件和薄膜磁头
公开(公告)号：US06635366B2
公开(公告)日：2003-10-21
申请号：US09728069
申请日：2000-11-30
申请人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
发明人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , Y10S428/90 , Y10T428/1107 , Y10T428/1193 , Y10T428/24942
摘要： A spin valve thin film magnetic element is provided composed of an antiferromagnetic layer; a pinned magnetic layer, formed in contact with the antiferromagnetic layer, in which the direction of magnetization is pinned by an exchange coupling magnetic field with the antiferromagnetic layer; a nonmagnetic conductive layer in contact with the pinned magnetic layer; and a free magnetic layer in contact with the nonmagnetic conductive layer, wherein the free magnetic layer is composed of a nonmagnetic intermediate layer, and the first and second free magnetic layers holding the nonmagnetic intermediate layer therebetween; the first free magnetic layer and the second free magnetic layer are antiferromagnetically coupled to enter the ferrimagnetic state; and a resistivity of the first free magnetic layer in the side farther from the nonmagnetic intermediate layer is higher than a resistivity of the second free magnetic layer in the nonmagnetic intermediate layer side. According to the spin valve thin film magnetic element, it is possible to increase the detection sensitivity for the external magnetic field, to reduce the shunt loss of the sensing current, and to increase the rate of change in magnetoresistance.
摘要翻译：提供由反铁磁层构成的自旋阀薄膜磁性元件; 与反铁磁层接触形成的钉扎磁性层，其中磁化方向通过与反铁磁层的交换耦合磁场固定; 与被固定的磁性层接触的非磁性导电层; 以及与非磁性导电层接触的自由磁性层，其中所述自由磁性层由非磁性中间层构成，所述第一和第二自由磁性层在其间保持非磁性中间层; 第一自由磁性层和第二自由磁性层被反铁磁耦合以进入亚铁磁状态; 并且离非磁性中间层更远的一侧的第一自由磁性层的电阻率高于非磁性中间层侧的第二自由磁性层的电阻率。根据自旋阀薄膜磁性元件，可以增加外部磁场的检测灵敏度，减小感测电流的并联损耗，并增加磁阻的变化率。

98. 发明授权

US06587316B2 Spin-valve type thin film magnetic element 失效
公开(公告)号：US06587316B2
公开(公告)日：2003-07-01
申请号：US09934115
申请日：2001-08-21
申请人： Naoya Hasegawa
发明人： Naoya Hasegawa
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3903 , H01F10/324 , H01F10/3268 , H01F41/325
摘要： The relation of (RS1/H1)/(Rsg/Hg)≦0.02 is valid when the extending length in the vertical direction from an opposed face to an magnetic recording medium toward the inside of the electrode layer is represented by H1, a sheet resistance of the electrode layer is defined by Rs1, the extending length in the vertical direction from an opposed face to an magnetic recording medium toward the inside of the laminated body, or the elevation of the element, is defined by Hg, and the sheet resistance of the laminated body is defined by Rsg, thereby the output characteristics of the spin-valve type thin film magnetic element is improved while preventing side-reading from generating.

99. 发明授权

US06424506B1 Spin-valve magnetoresistive thin film element 有权
标题翻译：旋转阀磁阻薄膜元件
公开(公告)号：US06424506B1
公开(公告)日：2002-07-23
申请号：US09357915
申请日：1999-07-20
申请人： Masamichi Saito , Naoya Hasegawa
发明人： Masamichi Saito , Naoya Hasegawa
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3951 , G11B2005/3996 , H01F10/3268 , H01F41/304 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49055 , Y10T29/49067
摘要： A spin-valve magnetoresistive element includes a plurality of layers. The magnetic moment of a first pinned magnetic layer is greater than the magnetic moment of a second pinned magnetic layer, and the magnetic moment of the first pinned magnetic layer faces in the left direction in the drawing. Accordingly, the synthesized magnetic moment of the first pinned magnetic layer and the second pinned magnetic layer faces in the left direction in the drawing. Thus, causing a sensing current to flow in a first direction so as to generate a sensing galvanomagnetic field circling in the right-hand direction causes the direction of the sensing galvanomagnetic field and the direction of the synthesized magnetic moment to match, thereby facilitating improvement in the stability of the magnetization state of the first and second pinned magnetic layers.
摘要翻译：自旋阀磁阻元件包括多个层。第一钉扎磁性层的磁矩大于第二钉扎磁性层的磁矩，并且第一钉扎磁性层的磁矩在图中向左方向。因此，图中第一被钉扎磁性层和第二固定磁性层的合成磁矩面向左方向。因此，使得感测电流沿第一方向流动，以便产生沿右手方向盘绕的感测电磁场使得感测电磁场的方向和合成磁矩的方向匹配，从而有助于改进第一和第二固定磁性层的磁化状态的稳定性。

100. 发明授权

US06387550B1 Giant magnetoresistive material film, method of producing the same and magnetic head using the same 失效
标题翻译：巨磁阻材料膜，其制造方法和使用其的磁头
公开(公告)号：US06387550B1
公开(公告)日：2002-05-14
申请号：US09547705
申请日：2000-04-11
申请人： Fumihito Koike , Naoya Hasegawa
发明人： Fumihito Koike , Naoya Hasegawa
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , C23C14/085 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10 , Y10S428/90 , Y10T428/1129 , Y10T428/1157 , Y10T428/1193 , Y10T428/12958 , Y10T428/26 , Y10T428/265
摘要： A giant magnetoresistive material film includes at least two ferromagnetic layers of a NiFe alloy or NiFeCo alloy, which are formed on a substrate through a nonmagnetic layer of Au, Ag, Cu or Cr, wherein magnetization of at lest one of the ferromagnetic layers is pinned by a coercive force increasing layer of &agr;-Fe2O3 provided adjacent thereto and having a thickness of 200 to 1000 Å so as to increase coercive force of the ferromagnetic layer, and the other ferromagnetic layer has free magnetization so as to produce a change in magnetic resistance at a low magnetic field. The present invention also provides a method of producing the giant magnetoresistive material film and a magnetic head provided with the giant magnetoresistive material film.
摘要翻译：巨磁阻材料薄膜包括NiFe合金或NiFeCo合金的至少两个铁磁层，它们通过Au，Ag，Cu或Cr的非磁性层形成在衬底上，其中至少一个铁磁层的磁化被固定通过与其相邻设置的厚度为200〜1000的α-Fe2O3矫顽力增加层，以增加铁磁层的矫顽力，另一个铁磁层具有自由磁化，从而产生磁阻的变化在低磁场下。本发明还提供了制造巨磁阻材料膜的方法和设置有巨磁阻材料膜的磁头。

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