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91. 发明授权

US07439121B2 Dielectric film and method of forming it, semiconductor device, non-volatile semiconductor memory device, and production method for semiconductor device 有权
标题翻译：电介质膜及其形成方法，半导体器件，非易失性半导体存储器件以及半导体器件的制造方法
公开(公告)号：US07439121B2
公开(公告)日：2008-10-21
申请号：US10451925
申请日：2001-12-27
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyuki Shirai
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyuki Shirai
IPC分类号： H01L21/33
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/02315 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/2822 , H01L21/30604 , H01L21/3144 , H01L21/31662 , H01L21/3185 , H01L21/823462 , H01L27/105 , H01L27/1052 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66757 , H01L29/78603 , H01L29/78645
摘要： In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.
摘要翻译：在包括多个硅基晶体管或电容器的半导体器件的成膜方法中，预先至少在硅表面的一部分中存在氢，并且成膜方法通过将硅表面暴露于第一惰性气体等离子体。此后，通过在使用第二惰性气体和一种或多种气态分子的混合气体的同时产生等离子体，在硅气体的表面上形成硅化合物层，使得形成至少含有构成气体分子的元素在硅气体的表面上。

92. 发明申请

US20080220592A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PLANARIZATION METHOD 审中-公开
标题翻译：基板处理装置，基板处理方法和基板平面化方法
公开(公告)号：US20080220592A1
公开(公告)日：2008-09-11
申请号：US12045321
申请日：2008-03-10
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Tetsuya Goto
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Tetsuya Goto
IPC分类号： H01L21/3213 , H01L21/321
CPC分类号： H01L21/67115 , H01L21/3003 , H01L21/324 , H01L21/67098 , H01L21/67109 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78603
摘要： A substrate processing apparatus has a processing space provided with a holding stand for holding a substrate to be processed. A hydrogen catalyzing member is arranged in the processing space to face the substrate and for decomposing hydrogen molecules into hydrogen radicals H*. A gas feeding port is arranged in the processing space on an opposite side of the hydrogen catalyzing member to the substrate for feeding a processing gas including at least hydrogen gas. An interval between the hydrogen catalyzing member and the substrate on the holding stand is set less than the distance that the hydrogen radicals H* can reach.
摘要翻译：衬底处理设备具有设置有用于保持待处理衬底的保持架的处理空间。在处理空间中配置氢气催化构件以面对衬底并将氢分子分解成氢原子H *。气体供给口设置在处理空间中，在与氢气催化构件相对的基板上，供给至少包含氢气的处理气体。氢催化构件和保持架上的基板之间的间隔被设定为小于氢根H *可以达到的距离。

93. 发明授权

US07325511B2 Microwave plasma processing apparatus, microwave processing method and microwave feeding apparatus 有权
标题翻译：微波等离子体处理装置，微波处理方法和微波馈电装置
公开(公告)号：US07325511B2
公开(公告)日：2008-02-05
申请号：US10450149
申请日：2002-10-18
申请人： Naohisa Goto , Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
发明人： Naohisa Goto , Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32229 , H01J37/32192
摘要： A microwave plasma processing apparatus includes a processing vessel, a microwave generator, a waveguide guiding a microwave formed by the microwave generator, and a microwave emitting member emitting the microwave with wavelength compression by a retardation plate, wherein the waveguide has a single microwave output opening in a location corresponding to a central par of the microwave emitting member.
摘要翻译：微波等离子体处理装置包括处理容器，微波发生器，引导由微波发生器形成的微波的波导和通过相位差板发射波长压缩的微波的微波发射部件，其中波导具有单个微波输出开口在对应于微波发射部件的中心部分的位置。

94. 发明申请

US20070102403A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20070102403A1
公开(公告)日：2007-05-10
申请号：US11592253
申请日：2006-11-03
申请人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
发明人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
IPC分类号： B23K9/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32229
摘要： The purpose of the present invention is to provide homogeneous plasma in longitudinal direction of a plasma processing apparatus applicable to multiple processes. A microwave waveguide 10 with a plurality of variable couplers 12 is placed in a vacuum chamber 21. The microwave generated in a microwave generator 23 is introduced into the microwave waveguide 10 via a waveguide 24. And a plasma 22 in the chamber 21 is generated by the microwave 25. Intensity distribution of the microwave 25 in the microwave waveguide 10 can be varied by moving a plurality of variable couplers 12 individually upward or downward as shown by two-way arrow.
摘要翻译：本发明的目的是提供适用于多个工艺的等离子体处理装置的纵向均匀等离子体。具有多个可变耦合器12的微波波导10被放置在真空室21中。在微波发生器23中产生的微波通过波导24被引入到微波波导10中。并且通过微波25产生室21中的等离子体22。如微波波导10中的微波25的强度分布可以通过单独向上或向下移动多个可变耦合器12来改变，如双向箭头所示。

95. 发明申请

US20060261037A1 Substrate processing method and substrate processing apparatus 审中-公开
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20060261037A1
公开(公告)日：2006-11-23
申请号：US11496440
申请日：2006-08-01
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama
IPC分类号： C23F1/00 , H01L21/302 , H01L21/306 , C03C25/68
CPC分类号： H01L21/02247 , C23C8/36 , H01J37/321 , H01J37/32357 , H01L21/02252 , H01L21/3143 , H01L21/318
摘要： In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures (131a) for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and N2 is supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.
摘要翻译：在衬底处理装置中，控制电极（131）分离包括待处理衬底和不包括衬底的等离子体形成空间（11B）的处理空间（11C）。控制电极包括形成在处理容器中并具有用于使等离子体通过的多个孔（131a）的导电构件。控制电极的表面被氧化铝或导电氮化物覆盖。在基板处理装置中，将含有He和N 2的气体供给到处理容器中。在等离子体形成空间中，在原子态氮N *被激发的条件下形成等离子体。原子态氮N *用于氮化衬底的表面。

96. 发明申请

US20060213436A1 Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US20060213436A1
公开(公告)日：2006-09-28
申请号：US10555770
申请日：2004-04-26
申请人： Tadahiro Ohmi , Masaki Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama
IPC分类号： C23C16/00
CPC分类号： H01L21/67069 , H01J37/32192 , H01J37/32834 , H01J2237/022
摘要： A substrate processing apparatus (10A) using a microwave plasma is disclosed wherein an inner partition wall (15) is provided within a process chamber (11) so that the inside of the process chamber (11) is divided into a space (11A) where a substrate to be processed is housed and a space (11B) which is defined by the inner partition wall (15) and the outer wall of the process chamber (11). By having such a structure, contamination of the substrate by a gas separated from the sealing material and contamination of the substrate caused by abnormal discharge can be prevented, thereby enabling clean processing of the substrate.
摘要翻译：公开了一种使用微波等离子体的基板处理装置（10A），其中在处理室（11）内设置有内隔壁（15），使得处理室（11）的内部被分成空间），其中容纳有待处理的基板和由所述内分隔壁（15）和所述处理室（11）的外壁限定的空间（11B）。通过这样的结构，可以防止由密封材料分离的气体和由异常放电引起的基板污染导致的基板的污染，从而能够清洁基板的处理。

97. 发明申请

US20050272266A1 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20050272266A1
公开(公告)日：2005-12-08
申请号：US11193390
申请日：2005-08-01
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyukil Shirai
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Yasuyukil Shirai
IPC分类号： H01L21/28 , H01L21/306 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/76 , H01L21/8234 , H01L21/8239 , H01L21/8246 , H01L21/8247 , H01L27/00 , H01L27/088 , H01L27/105 , H01L27/115 , H01L27/12 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L21/461
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02307 , H01L21/02315 , H01L21/30604 , H01L21/3144 , H01L21/3145 , H01L21/31612 , H01L21/31662 , H01L21/3185 , H01L21/823462 , H01L27/105 , H01L27/1052 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66757 , H01L29/78603 , H01L29/78645
摘要： In a fabrication method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of a silicon surface in advance, and the hydrogen is removed by exposing the silicon surface to a first inert gas plasma. Thereafter, plasma is generated by a mixed gas of a second inert gas and one or more gaseous molecules, and a silicon compound layer containing at least a part of the elements constituting the gaseous molecules is formed on the surface of the silicon gas.
摘要翻译：在包括多个硅基晶体管或电容器的半导体器件的制造方法中，预先至少在硅表面的一部分中存在氢，并且通过将硅表面暴露于第一惰性气体等离子体来除去氢。此后，通过第二惰性气体和一种或多种气体分子的混合气体产生等离子体，并且在硅气体的表面上形成含有构成气体分子的至少一部分元素的硅化合物层。

98. 发明授权

US06847672B2 Laser gas supply path structure in an exposure apparatus 有权
标题翻译：曝光装置中的激光气体供给路径结构
公开(公告)号：US06847672B2
公开(公告)日：2005-01-25
申请号：US09985707
申请日：2001-11-06
申请人： Tadahiro Ohmi , Hiroshi Osawa , Nobuyoshi Tanaka , Kazuhide Ino , Toshikuni Shinohara , Yasuyuki Shirai , Masaki Hirayama
发明人： Tadahiro Ohmi , Hiroshi Osawa , Nobuyoshi Tanaka , Kazuhide Ino , Toshikuni Shinohara , Yasuyuki Shirai , Masaki Hirayama
IPC分类号： H01S5/30 , H01S3/036 , H01S3/22 , G03B27/42 , G03B27/54 , H01S3/03 , H01S3/223
CPC分类号： H01S3/036
摘要： A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.
摘要翻译：气体供给路径结构形成用于允许激光气体流入或流出一对流体入口和出口11a的流体路径，并且在喉部处将激光气体控制到预定的亚音速。用于控制气体速度的气体供应装置连接到流体入口和气体供给路径结构的流体出口，并且与冷却装置一起构成用于控制激光气体的速度和压力的循环系统流体入口和/或在流体出口处。

99. 发明授权

US06830652B1 Microwave plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06830652B1
公开(公告)日：2004-12-14
申请号：US09678741
申请日：2000-10-04
申请人： Tadahiro Ohmi , Masaki Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama
IPC分类号： H01L2100
CPC分类号： C23C16/45565 , C23C16/24 , C23C16/345 , C23C16/45578 , C23C16/511 , H01J37/32192 , H01J37/3244
摘要： In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged from different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.
摘要翻译：在微波等离子体处理装置中，在介电材料喷淋板103和主要是惰性气体的等离子体激发气体之间设置金属制的格子状喷淋板111，从不同的位置排出处理气体。高能离子可以通过使网状淋浴板接地而入射在基板114的表面上。优化了微波引入部分的电介质材料分离壁102和电介质材料中的每一个的厚度，以使等离子体激发效率最大化，并且同时，缝隙天线110与电介质材料分离之间的距离电介质材料喷淋板103的厚度优化，能够供给具有大功率的微波。

100. 发明授权

US06783628B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06783628B2
公开(公告)日：2004-08-31
申请号：US10007127
申请日：2001-12-03
申请人： Naoko Yamamoto , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Naoko Yamamoto , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32192 , H01J37/32211
摘要： A slot antenna plate is placed on a second dielectric for radiating microwave into a chamber interior, the slot antenna plate being provided on a side of the second dielectric that faces the chamber interior. The slot antenna plate is made of conductor and includes slots for passing the microwave there through to the chamber interior. In this way, a plasma processing apparatus is provided generating plasma by microwave, the plasma processing apparatus capable of easily adjusting ion irradiation energy for a material to be processed to achieve uniform plasma processing for the material within the plane of the material.
摘要翻译：槽缝天线板放置在用于将微波辐射到室内部的第二电介质上，缝隙天线板设置在面向腔室内部的第二电介质的一侧上。缝隙天线板由导体制成，并且包括用于使微波在那里通过腔室内部的槽。以这种方式，通过微波提供产生等离子体的等离子体处理装置，等离子体处理装置能够容易地调整待处理材料的离子照射能量，以实现材料平面内材料的均匀等离子体处理。

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