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91. 发明申请

US20060270188A1 DEVICE TRANSFERRING SYSTEM, DEVICE TRANSFERRING METHOD, AND DISPLAY MANUFACTURING METHOD 有权
标题翻译：设备传送系统，设备传送方法和显示器制造方法
公开(公告)号：US20060270188A1
公开(公告)日：2006-11-30
申请号：US11383892
申请日：2006-05-17
申请人： Toshiaki Kanemitsu , Yuji Nishi , Katsuhiro Tomoda , Masato Doi
发明人： Toshiaki Kanemitsu , Yuji Nishi , Katsuhiro Tomoda , Masato Doi
IPC分类号： H01L21/30
CPC分类号： H01L21/67092 , H01L21/68
摘要： A device transferring system includes a first substrate support portion on which to mount a first substrate, a second substrate support portion for supporting a second substrate opposed to the first substrate, a swinging unit for regulating the position of the first substrate support portion so that a device on the first substrate makes contact with the second substrate side in parallel to the second substrate, a movable stage for supporting and moving the swinging unit, a sensor unit for sensing the condition where the device on the first substrate has made contact with the second substrate side, the sensor unit being provided between the first substrate support portion and a sensor support portion formed in the swinging unit, and a measuring unit 61 for measuring the position of stop of a motion of the first substrate due to the contact of the first substrate with the second substrate, and for measuring the moving amount of the swinging unit after the approaching motion of the first substrate is stopped.
摘要翻译：装置传送系统包括：第一基板支撑部分，其上安装第一基板;第二基板支撑部分，用于支撑与第一基板相对的第二基板;摆动单元，用于调节第一基板支撑部分的位置，第一基板上的装置与第二基板平行地与第二基板侧接触，用于支撑和移动摆动单元的可移动台，用于感测第一基板上的装置已经与第二基板接触的状态的传感器单元传感器单元设置在第一基板支撑部分和形成在摆动单元中的传感器支撑部分之间;以及测量单元61，用于测量由于第一基板支撑部分与第一基板支撑部分的接触而导致的第一基板的运动停止位置基板，并且用于在第一基板的接近运动之后测量摆动单元的移动量底物停止。

92. 发明授权

US07129515B2 Lighting system 失效
标题翻译：照明系统
公开(公告)号：US07129515B2
公开(公告)日：2006-10-31
申请号：US11098302
申请日：2005-03-31
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L29/20 , H01L31/036
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
摘要翻译：提供半导体发光器件。半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

93. 发明授权

US07122826B2 Image display unit 失效
标题翻译：图像显示单元
公开(公告)号：US07122826B2
公开(公告)日：2006-10-17
申请号：US11093885
申请日：2005-03-30
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L29/20 , H01L31/036
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
摘要翻译：提供半导体发光器件。半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

94. 发明授权

US07085011B2 Color proofing apparatus and method of making color proof 失效
公开(公告)号：US07085011B2
公开(公告)日：2006-08-01
申请号：US10047085
申请日：2002-01-14
申请人： Katsushi Fujita , Tohru Hoshino , Hiroaki Tajima , Masato Doi
发明人： Katsushi Fujita , Tohru Hoshino , Hiroaki Tajima , Masato Doi
IPC分类号： G06K15/00 , G06K9/00 , B41J1/00 , G03F3/08
CPC分类号： H04N1/6022 , G06K15/00 , G06K15/025 , H04N1/6011
摘要： An apparatus for making a color proof based on an image signal including yellow, magenta, cyan and black component data Y, M, C, K for each pixel, comprises; an image signal input section to receive the image signal; a black component correcting section to correct the black component data K on the basis of the yellow, magenta and cyan component data Y, M, C for each pixel in accordance with a predetermined black component correcting condition; an image signal output section to output an image signal including yellow, magenta, cyan and corrected-black component data Y, M, C, K′; and a color proof making section to expose a silver halide light sensitive material based on the outputted image signal with a plurality of light sources different in wavelength and to make a color proof sheet for each color of yellow, magenta, cyan and black.

95. 发明授权

US07030421B2 Semiconductor light emitting device and fabrication method thereof 有权
公开(公告)号：US07030421B2
公开(公告)日：2006-04-18
申请号：US10962025
申请日：2004-10-08
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
IPC分类号： H01L33/00
CPC分类号： H01L33/24
摘要： Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate. The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place.

96. 发明授权

US06998645B2 Semiconductor light emitting device having a semiconductor layer formed by selective growth 失效
公开(公告)号：US06998645B2
公开(公告)日：2006-02-14
申请号：US11076846
申请日：2005-03-09
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01J63/04 , H01J63/06 , H01S5/227 , H01S5/2272 , H01S5/32341
摘要： Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

97. 发明申请

US20060007297A1 Device transfer method 有权
标题翻译：设备传输方式
公开(公告)号：US20060007297A1
公开(公告)日：2006-01-12
申请号：US11158980
申请日：2005-06-22
申请人： Masato Doi , Toyoharu Oohata
发明人： Masato Doi , Toyoharu Oohata
IPC分类号： B41J2/435
CPC分类号： H01L21/6835 , B23K26/066 , H01L33/20 , H01L33/24 , H01L2221/68359 , H01L2221/68363 , H01L2924/30105
摘要： A device transfer method is provided. The device transfer method is disclosed by which, when a laser ablation technique is used to selectively exfoliate devices arranged on a substrate, the energy is transmitted efficiently to transfer the devices with a high degree of accuracy and at a high speed. A laser irradiation apparatus is used which includes a laser light source for generating a laser beam, a reflection section for reflecting the laser beam toward a required direction, and a control section for controlling whether or not the laser beam is to be irradiated in an interlocking relationship with the reflection section. The laser beam is selectively irradiated on a plurality of devices arranged on a transfer source substrate to cause laser ablation such that the selected devices are transferred to a transfer destination substrate by the selective laser ablation.
摘要翻译：提供了一种设备传送方法。公开了一种器件转移方法，其中当使用激光烧蚀技术来选择性地剥离布置在衬底上的器件时，能量被有效地传输，以高精度和高速度传输器件。使用激光照射装置，其包括用于产生激光束的激光源，用于将激光束朝向所需方向反射的反射部分，以及用于控制激光束是否要以互锁方式照射的控制部分与反射部分的关系。激光束被选择性地照射在布置在转移源基板上的多个器件上以引起激光烧蚀，使得所选择的器件通过选择性激光烧蚀转移到转移目的基片。

98. 发明申请

US20050167677A1 Image display unit 失效
公开(公告)号：US20050167677A1
公开(公告)日：2005-08-04
申请号：US11097732
申请日：2005-03-31
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L21/205 , H01L33/00 , H01L33/10 , H01L33/16 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L29/15
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

99. 发明授权

US06924500B2 Semiconductor light-emitting device and process for producing the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US06924500B2
公开(公告)日：2005-08-02
申请号：US10062687
申请日：2002-01-30
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L21/205 , H01L33/00 , H01L33/10 , H01L33/16 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L29/20 , H01L31/036
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
摘要翻译：提供半导体发光器件。半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

100. 发明申请

US20050145859A1 Semiconductor light-emitting device and process for producing the same 有权
公开(公告)号：US20050145859A1
公开(公告)日：2005-07-07
申请号：US11066699
申请日：2005-02-24
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L21/205 , H01L33/00 , H01L33/10 , H01L33/16 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L27/15
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

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