会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 94. 发明授权
    • Method of treating calcium nitrate contained in denitration waste liquid
    • 处理硝酸废液中硝酸钙的方法
    • US4044111A
    • 1977-08-23
    • US685625
    • 1976-05-12
    • Isao FurutaHiroshi TamuraMasami Takao
    • Isao FurutaHiroshi TamuraMasami Takao
    • B01D53/56B01D53/77C01B7/00C01B7/01C01F11/46C02F1/02C01B21/00
    • C01F11/46B01D53/56C01B7/01
    • The present invention provides a method of converting NO.sub.3.sup.- ions which are contained in denitration waste liquids to nonpoisonous N.sub.2 gas or to valuable by-products. In the method of the invention, concentrated sulfuric acid is added to the waste liquid which results from denitration of exhaust gases which contains calcium nitrate and calcium chloride to obtain a mixed solution of nitric acid, hydrochloric acid, sulfuric acid and calcium sulfate. The ratio of the chloride ions to nitrate ions in the mixed solution is adjusted within the range of Cl.sup.- /NO.sub.3.sup.- = 2-3; the mixed solution is heated to 110.degree. to 150.degree. C after adjusting the concentration of sulfuric acid in the solution to 10 to 70% by weight to thereby convert the mixed solution to a mixed gas essentially including NOCl, Cl.sub.2 and nitrogen oxides. The mixed gas is then passed through concentrated sulfuric acid having a concentration higher than 80% which is maintained at a temperature of 80.degree. to 150.degree. C to obtain a nitrosylsulfuric acid solution. A mixed gas containing SO.sub.2 and H.sub.2 O is passed into the thusly formed nitrosylsulfuric acid solution to obtain a mixed gas containing NO, NO.sub.2 and SO.sub.2 which is then introduced into a reducing solution to convert the nitrogen oxides to N.sub.2 gas.
    • 本发明提供将硝酸废液中含有的NO 3 - 离子转化为无毒N 2气体或有价值的副产物的方法。 在本发明的方法中,向含有硝酸钙和氯化钙的废气脱硝所产生的废液中加入浓硫酸,得到硝酸,盐酸,硫酸,硫酸钙的混合溶液。 混合溶液中氯离子与硝酸根离子的比例调节在Cl- / NO3- = 2-3范围内; 将溶液中的硫酸浓度调整为10〜70重量%后,将混合溶液加热至110〜150℃,由此将混合溶液转化为基本上含有NOCl,Cl 2和氮氧化物的混合气体。 然后将混合气体通过浓度高于80%的浓硫酸,将其保持在80-150℃的温度下,得到亚硫酰基硫酸溶液。 将含有SO 2和H 2 O的混合气体进入如此形成的亚硝酰基硫酸溶液中,得到含有NO,NO 2和SO 2的混合气体,然后将其引入还原溶液中以将氮氧化物转化为N 2气体。
    • 97. 发明申请
    • Power Converting Apparatus
    • 电力转换装置
    • US20130264984A1
    • 2013-10-10
    • US13993265
    • 2010-12-27
    • Hiroshi TamuraToshiyuki Ajima
    • Hiroshi TamuraToshiyuki Ajima
    • H02P27/06
    • H02P27/06H02M7/48H02M2001/007
    • Provided is a power converting apparatus which suppresses noise caused by a square wave voltage that is sharply changed according to switching of the power converting apparatus.The invention has a power converting apparatus including a first inverter circuit connected to a DC power supply side; and a second inverter circuit connected to a load side, wherein the first inverter circuit converts DC power from the DC power supply into power having an absolute waveform of an AC waveform, and the second inverter circuit converts the power of the absolute waveform every single cycle thereof into AC power by alternately inverting the power.
    • 提供了一种电力转换装置,其抑制由根据电力转换装置的切换而急剧变化的方波电压引起的噪声。 本发明具有电力转换装置,包括连接到直流电源侧的第一逆变器电路; 以及连接到负载侧的第二逆变器电路,其中,所述第一逆变器电路将来自所述直流电源的直流电力转换成具有交流波形的绝对波形的电力,并且所述第二反相器电路每一周期转换所述绝对波形的功率 通过交替地反转功率而进入AC电力。
    • 98. 发明授权
    • Method for producing SOI substrate
    • SOI衬底的制造方法
    • US08420503B2
    • 2013-04-16
    • US12933113
    • 2009-04-01
    • Shoji AkiyamaMakoto KawaiAtsuo ItoYoshihiro KubotaKouichi TanakaYuji TobisakaHiroshi Tamura
    • Shoji AkiyamaMakoto KawaiAtsuo ItoYoshihiro KubotaKouichi TanakaYuji TobisakaHiroshi Tamura
    • H01L21/762
    • H01L21/76254H01L27/12
    • A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.
    • 一种容易制造透明SOI衬底的方法,其具有:形成有硅膜的主表面; 以及位于与形成硅膜的一侧相反一侧的粗糙主表面。 制造透明SOI衬底的方法,其中在透明绝缘衬底的第一主表面上形成硅膜,同时透明绝缘衬底的与第一主表面相反的第二主表面被粗糙化。 该方法至少包括以下步骤:使RMS表面粗糙度低于0.7nm的第一主表面粗糙化,并且第二主表面的RMS表面粗糙度高于第一主表面的表面粗糙度,以制备透明绝缘基板; 以及在所述透明绝缘基板的所述第一主表面上形成所述硅膜。
    • 100. 发明授权
    • Method for manufacturing SOI wafer
    • 制造SOI晶圆的方法
    • US08357586B2
    • 2013-01-22
    • US12920363
    • 2009-03-23
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoKouichi TanakaMakoto KawaiYuji TobisakaHiroshi Tamura
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoKouichi TanakaMakoto KawaiYuji TobisakaHiroshi Tamura
    • H01L21/46H01L21/30H01L21/762
    • H01L21/76254H01L21/30608
    • Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm.
    • 提供一种SOI晶片的制造方法,其能够:有效地除去通过离子注入剥离法剥离的剥离面附近的离子注入层中存在的离子注入缺陷层; 确保基板的面内均匀性; 并且还实现成本降低和更高的吞吐量。 制造SOI晶片的方法至少包括以下步骤:将具有或不具有氧化物膜的硅晶片接合到处理晶片上以制备键合衬底,其中所述硅晶片具有通过注入氢离子形成的离子注入层和/ 或稀有气体离子进入硅晶片; 沿着离子注入层剥离硅晶片,从而将硅晶片转移到处理晶片上以产生剥离后的SOI晶片; 将剥离后的SOI晶片浸渍在氨 - 过氧化氢水溶液中; 并在浸渍的剥离后的SOI晶片上进行900℃以上的温度的热处理,和/或通过CMP研磨10〜50nm来研磨浸渍的剥离后的SOI晶片的硅膜层。