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    • 91. 发明申请
    • Semiconductor device, a manufacturing method thereof, and a camera
    • 半导体装置及其制造方法以及照相机
    • US20060186439A1
    • 2006-08-24
    • US11407270
    • 2006-04-20
    • Hiroshi Tanaka
    • Hiroshi Tanaka
    • H01L27/148H01L21/339
    • H01L29/66946H01L27/14689H01L27/14806
    • A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating film. The insulating film has a first thickness and a second thickness that is thinner than the first thickness. The insulating film has the first thickness below both ends of the transfer electrode in a width direction of the transfer channel that is orthogonal to a charge transfer direction through the transfer channel, and the insulating film has the second thickness on a part including a center of the transfer channel in the width direction.
    • 半导体器件包括用于传输由光电转换产生的电荷的转移通道,形成在转移通道上的绝缘膜,以及用于经由绝缘膜向转移通道施加转印电压的转印电极。 绝缘膜具有比第一厚度薄的第一厚度和第二厚度。 所述绝缘膜在与所述传输沟道的电荷传输方向正交的所述传输沟道的宽度方向上具有位于所述传输电极的两端下方的第一厚度,并且所述绝缘膜在包括所述传输通道的中心的部分上具有第二厚度 传输通道在宽度方向。
    • 93. 发明授权
    • Semiconductor device, a manufacturing method thereof, and a camera
    • 半导体装置及其制造方法以及照相机
    • US07061030B2
    • 2006-06-13
    • US10930824
    • 2004-09-01
    • Hiroshi Tanaka
    • Hiroshi Tanaka
    • H01L27/148
    • H01L29/66946H01L27/14689H01L27/14806
    • A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating film. The insulating film has the first thickness and a second thickness that is thinner than the first thickness. The insulating film has the first thickness below both ends of the transfer electrode in a width direction of the transfer channel that is orthogonal to a charge transfer direction through the transfer channel, and the insulating film has the second thickness on a part including a center of the transfer channel in the width direction.
    • 半导体器件包括用于传输由光电转换产生的电荷的转移通道,形成在转移通道上的绝缘膜,以及用于经由绝缘膜向转移通道施加转印电压的转印电极。 绝缘膜具有比第一厚度薄的第一厚度和第二厚度。 所述绝缘膜在与所述传输沟道的电荷传输方向正交的所述传输沟道的宽度方向上具有位于所述传输电极的两端下方的第一厚度,并且所述绝缘膜在包括所述传输通道的中心的部分上具有第二厚度 传输通道在宽度方向。
    • 98. 发明申请
    • Semiconductor integrated circuit
    • 半导体集成电路
    • US20060101232A1
    • 2006-05-11
    • US11240549
    • 2005-10-03
    • Masashi TakadaTakanobu TsunodaHiroshi TanakaTetsuroo Honmura
    • Masashi TakadaTakanobu TsunodaHiroshi TanakaTetsuroo Honmura
    • G06F15/00
    • G06F9/3879G06F15/7867
    • The present invention relates to data access to a built-in memory or a peripheral circuit from any of ALU cells provided in the array state, and provides a semiconductor integrated circuit having an access mechanism enabling size reduction in the hardware scale and improvement in the usability. There are provided dedicated cell groups 1304, 1306 for executing memory access processing to built-in memories 1313, 1312 in a plurality of ALU cells. Further there are provided dedicated cell groups 1304, 1306 enabling access commonly available for built-in memories to a peripheral circuit 1201 or LSI external device 206. By providing dedicated cell groups for memory access processing to built-in memories, the ALU cell does not require a memory access mechanism, which enables reduction of an area and improvement in efficiency in use. Further access common to the built-in memories or peripheral circuits is possible, which enables improvement in the usability.
    • 本发明涉及从阵列状态中提供的任何一个ALU单元到内置存储器或外围电路的数据访问,并且提供了一种半导体集成电路,其具有能够缩小硬件尺寸并提高可用性的访问机构 。 提供了用于对多个ALU单元中的内置存储器1313,1312执行存储器访问处理的专用单元组1304,1306。 此外,还提供了专用单元组1304,1306,使外部电路1201或LSI外部设备206的内置存储器通用。通过为内置存储器提供用于存储器访问处理的专用单元组,ALU单元不 需要存储器访问机制,这使得能够减少面积并提高使用效率。 内置存储器或外围电路通用的进一步访问是可能的,这样可以改善可用性。