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    • 94. 发明授权
    • Method of making a semiconductor device
    • 制造半导体器件的方法
    • US6001727A
    • 1999-12-14
    • US827464
    • 1997-03-28
    • Tadahiro OhmiMamoru Miyawaki
    • Tadahiro OhmiMamoru Miyawaki
    • H01L21/3205H01L21/321H01L21/768H01L23/52H01L21/4763
    • H01L21/76882H01L21/32115H01L2924/0002
    • In a semiconductor device in which a wiring layer is formed on the surface of a layer having a stepped portion, the wiring layer formed contains hydrogen at least at its surface portion. In a process for fabricating the semiconductor device, hydrogen is incorporated in the wiring layer in the course of, or after, the formation of the wiring layer. In particular, the wiring is heated at a temperature of from 150.degree. C. to 450.degree. C. in an atmosphere containing hydrogen gas, radical hydrogen or plasma hydrogen, without the step of exposure to the atmosphere, in the course of, or after, the formation of the wiring layer. The wiring layer is formed in an Ar and/or Xe plasma containing from 0.1% to 10% of at least one of hydrogen, radical hydrogen and plasma hydrogen.
    • 在其中在具有阶梯部分的层的表面上形成布线层的半导体器件中,形成的布线层至少在其表面部分含有氢。 在制造半导体器件的过程中,在形成布线层的过程中或之后,在布线层中并入氢。 特别地,在包含氢气,自由基氢或等离子体氢的气氛中,将配线在150℃〜450℃的温度下加热,而不是暴露于大气中的步骤,在或之后 ,形成布线层。 布线层形成在含有0.1%至10%的氢,自由基氢和等离子体氢中的至少一种的Ar和/或Xe等离子体中。
    • 100. 发明授权
    • Photoelectric converting apparatus with reduced electric power
comsumption
    • 具有降低功耗的光电转换装置
    • US5693932A
    • 1997-12-02
    • US527177
    • 1995-09-15
    • Isamu UenoMamoru Miyawaki
    • Isamu UenoMamoru Miyawaki
    • H01L31/10H04N5/335H04N5/341H04N5/369H04N5/374H04N5/378H01L27/00
    • H04N3/1512
    • To obtain a photoelectric converting apparatus of a small electric power consumption and a detecting method of a target object by using such an apparatus, the apparatus is first set to a low power source voltage mode, a reset and a transient reset are performed to a plurality of phototransistors as photoelectric converting devices and capacitors by pulses from terminals and a vertical shift register. After that, photoelectric conversion information is temporarily stored in capacitors and read out by a horizontal shift register. The read-out signal voltage is compared with a reference voltage by a comparator, thereby detecting the presence or absence of a reflection light. When the reflection light is detected, the apparatus is set to a high power source voltage mode and the reset and transient reset are again executed. After that information is read out from capacitors and is signal processed by an image processing circuit. Thus, the electric power consumption can be reduced.
    • 为了通过使用这种装置获得小功耗的光电转换装置和目标物体的检测方法,该装置首先被设置为低电源电压模式,复位和瞬态复位被执行到多个 的光电晶体管作为光电转换装置和电容器通过来自端子和垂直移位寄存器的脉冲。 之后,光电转换信息被暂时存储在电容器中并由水平移位寄存器读出。 通过比较器将读出的信号电压与参考电压进行比较,从而检测反射光的存在与否。 当检测到反射光时,将该设备设置为高电源电压模式,并且再次执行复位和瞬态复位。 之后,从电容器读出信息,并由图像处​​理电路进行信号处理。 因此,可以降低电力消耗。